3929556

Information

• Patent Grant
• 3929556

• References
• Source

• Patent Number

  3,929,556

• Date Filed

  Not available

• Date Issued

  Tuesday, December 30, 1975
  49 years ago

• CPC

  • C30B23/00 - Single-crystal growth by condensing evaporated or sublimed material
  • Y10S117/902 - Specified orientation, shape, crystallography, or size of seed or substrate
  • Y10S117/915 - Separating from substrate
  • Y10S148/063 - Gp II-IV-VI compounds
  • Y10S148/064 - Gp II-VI compounds
  • Y10S148/145 - Shaped junctions
  • Y10S148/15 - Silicon on sapphire SOS
  • Y10S438/93 - Ternary or quaternary semiconductor comprised of elements from three different groups

• US Classifications

  • 117 - Single-crystal, oriented-crystal, and epitaxy growth processes
  • 148 - Metal treatment
  • 252 - Compositions
  • 420 - Alloys or metallic compositions
  • 423 - Chemistry of inorganic compounds
  • 438 - Semiconductor device manufacturing: process