The present invention relates to a terahertz biometric imaging package, to an electronic device, and to a method for manufacturing an image sensor for a terahertz biometric imaging package.
Biometric systems are widely used as means for increasing the convenience and security of personal electronic devices, such as mobile phones etc. Fingerprint sensing systems, in particular, are now included in a large proportion of all newly released consumer electronic devices, such as mobile phones.
Optical fingerprint sensors have been known for some time and may be a feasible alternative to e.g. capacitive fingerprint sensors in certain applications. Optical fingerprint sensors may for example be based on the pinhole imaging principle and/or may employ micro-channels, i.e. collimators or microlenses to focus incoming light onto an image sensor. Capacitive fingerprint sensors rely on capacitive coupling between the fingerprint features of a finger and capacitive plates of the sensor.
Generally, it is desirable to integrate fingerprint sensing systems in electronic devices or in other devices, in a manufacturing efficient and cost-efficient way.
Although both optical fingerprint sensor and capacitive sensors provide promising integration solutions, there is still room for improvements with regards to fingerprint sensing system integration.
In view of the above-mentioned and other drawbacks of the prior art, it is an object of the present invention to provide a biometric sensor based on terahertz imaging technology that is provided as a package with improved integration possibilities compared to prior art fingerprint sensing systems.
According to a first aspect of the invention, there is provided a terahertz biometric imaging package comprising an image sensor comprising an antenna pixel array arranged to detect terahertz radiation transmitted from the illuminated object, for capturing an image. Each antenna pixel comprises a power detector including an antenna structure for receiving terahertz radiation, wherein the power detector is configured to convert a detected terahertz radiation to a sensing signal at a lower frequency than the frequency of the terahertz radiation.
Further, the terahertz biometric imaging package comprises a package top cover arranged to cover the antenna pixel array, wherein the image sensor is configured to capture a terahertz image of an object located on an opposite side of the package top cover.
Additionally, the package comprises a package bottom part arranged on the other side of the antenna pixel array opposite from the package top cover, wherein the antenna pixel array is encapsulated between the package top cover and the package bottom part.
The present invention is at least partly based on the realization that a terahertz image sensor may provide for a compact overall imaging package that provides for integration in a vast number of applications. Compared to other sensing technologies, terahertz sensors open for new possibilities in sensor configurations both in terms of package component material and design, but also in size of the total package. For example, as will be described below, the package bottom part or top cover may themselves serve as substrate for the image sensor pixels.
The present invention is further at least partly based on the realization that imaging at millimeter and sub-millimeter wavelengths, e.g. at frequencies in the “terahertz gap”, provides for increasing the ability to detect structures under the outermost tissue layer of a fingerprint. In other words, sub-dermal layers of the fingerprint may be detected. It was realized that the wavelength in the terahertz gap is long enough to be detected using e.g. RF circuit design but also low enough to be considered as light when it comes to beam shaping optics that may be implemented in some embodiments. Further, the photon energy is low enough so that the photons are not absorbed in most materials, i.e. the penetration of the radiation may be e.g. up to 0.2 mm, into the skin, increasing the probability to detect fingerprint spoofs.
Further, by means of the claimed invention, it may be possible to detect a fingerprint without requiring direct contact between the skin and the image sensor, and this ability is improved by the penetration of the radiation, thereby providing for more integration possibilities than for e.g. optical sensors operating in the visible range of light, or capacitive sensors requiring physical contact with the sensor surface.
Terahertz is herein preferably meant to include a range of radiation frequencies that are below the frequency of infrared light and above the frequency of microwaves, e.g. range of terahertz may herein be about 100 GHz to about 10 THz.
By the provision of the antenna pixel as a power detector, a compact antenna pixel is obtained that allows for simple read-out since the signal output is already, on chip, adapted for an analogue to digital converter (ADC) to receive without requiring additional AC-to-DC conversion circuits. Thus, the antenna pixels comprise both the antenna itself for collecting the terahertz radiation, and a frequency converting element for converting the detected terahertz signal to a signal detectable by e.g. an ADC. The inventors thus realized an array of such compact power detectors for image capturing in the terahertz range for applications where space is often limited.
A power detector acts as a sensor to detect the terahertz radiation and to provide a DC signal, which level depends on the power of the detected terahertz radiation. In other words, the antenna pixel may be adapted to sense the incoming terahertz radiation and to output a low frequency signal or a DC voltage level or a DC current level that is based on the power of the detected incoming terahertz radiation. Thus, a level of a DC voltage or current output from an antenna pixel may be based on the power of the detected terahertz radiation.
Still further, a power detector may advantageously be made from a two-dimensional material. Such two-dimensional material is preferably suitable for high-frequency applications. A two-dimensional material generally only includes one or a few atom layers.
For example, the two-dimensional material may be graphene. More specifically, the antenna pixel array may be made from graphene. Graphene is an example two-dimensional material and comprises one or a few layers of carbon atoms. Further, graphene is particularly suitable for the antenna and/or the power detector since graphene has high electrical mobility which means it allows for fast operation of a transistor structure made from graphene. Such transistor may be a graphene field effect transistor. Further, the electrical properties of graphene enable for modulating the electrical conductivity in a gate of a graphene structure which advantageously enables for frequency conversion for simple read-out as described above.
Further, graphene is a two-dimensional material that is flexible or bendable when arranged on a flexible or bendable substrate which provides mounting advantages for a vast number of applications.
Contrary to bulk semiconductor transistors, graphene is a two-dimensional material and provides improved sensitivity compared to the conventional bulk transistors. For example, the gate, drain and source structures of a graphene FET transistor may serve as antenna, whereby the flow of current from source to drain is affected by terahertz radiation that impedes on the gate/antenna.
In addition, using graphene for the antenna pixel enables for an at least nearly optically transparent antenna pixel array. The advantageously allows for nearly arbitrary mounting location of the image sensor in locations where it is desirable to not visually obstruct the appearance other components.
Although graphene is an advantageous alternative for embodiments herein, other two-dimensional materials are also conceivable, such as e.g. silicene, germanene, and phosphorene but also transition metal dichalcogenides (TMDs) such as e.g., MoS2, WS2, WSe2.
In some possible implementations, where non-flexible and opaque image sensors are conceivable, materials such as InP and GaN may be used for creating high frequency devices such as HEMT transistor-based power detectors.
The antenna may be a dipole antenna e.g. employing a bow tie antenna configuration. A bow tie antenna typically employs an at least partly circular geometry which advantageously provides a more polarization independent antenna compared to dipole antennas employing more straight geometries. Thereby, using a bow tie antenna provides for increasing the signal strength of detected terahertz radiation.
The power detector may hereby be an on-chip transistor structure electrically connected to the antenna of the pixel. Preferably, the antenna structure is part of the transistor structure.
The transistor structure and the antenna structure may be made in a single component, i.e. as a one component power detector. Thus, the pixel itself may comprise both the antenna and the transistor for rectifying the detected signal to provide a sensing signal.
The sensing signal is extractable from the image sensor for redirecting to an analogue to digital converter of a read-out circuit.
As mentioned above, the image sensor in embodiments of the present invention provides for improved flexibility in mounting locations and selection of material and design of packaging components, i.e. the package top cover and the package bottom part.
Accordingly, in embodiments, the package bottom part may be configured as a substrate for the array of antenna pixels. For example, the array of antenna pixels may advantageously be manufactured on the package bottom part, thereby reducing the number of parts of the package and the size of the package
Analogously, in other embodiments, the package top cover may be configured as a substrate for the array of antenna pixels. For example, the array of antenna pixels may advantageously be is manufactured on the package top cover, thereby reducing the number of parts of the package and the size of the package
In cases where the image sensor comprises a substrate supporting the antenna pixel array, wherein the substrate may advantageously be made from a flexible material.
Preferably, the antenna pixel array is a two-dimensional array of antenna pixels.
In embodiments, the package top cover may be a flexible transparent film. This advantageously allows for a wide range of mounting locations on surfaces that are bent or curved, or surfaces comprises features that should be visible, e.g. using a two-dimensional material for the image sensor, the package may be transparent if the bottom cover part is also transparent.
Accordingly, in embodiments, the package bottom part may be a flexible transparent film. For example, arranging the image sensor provided as an array of pixel antennas made from a two-dimensional material achieves an optically transparent and compact biometric imaging package. Such a biometric imaging package is mountable on nearly any surface since it is flexible and transparent and can be thin mainly limited by the thickness of the flexible transparent films. For example, the biometric imaging package is directly attachable to a surface of a user device. One possible implementation is that the biometric imaging package is attached to the outer surface of a display cover glass. In other words, the display may be manufactured nearly independently of the biometric imaging package which may be mounted on the outer surface of the display, i.e. on the side of the cover glass facing the user.
To provide an easy mountable and compact biometric imaging package the package top cover and the package bottom part may be attached to each other with the array of antenna pixels in-between.
The image sensor of the biometric imaging package may be adapted to passively detect terahertz radiation produced by the object itself, without the need for assisting illumination that illuminates the object. This provides for eliminating the need for a source that is fast enough to produce sufficient power at frequencies covering the terahertz frequencies, preferably in the terahertz gap discussed above. Further, by eliminating the source, a more compact biometric imaging device is obtained which is less complicated to mount in various locations.
However, equally well, the image sensor of the biometric imaging package may be adapted to detect radiation that is reflected from the object. In such case, terahertz radiation is emitted for illuminating the object and the image sensor is arranged to detect terahertz radiation reflected off the object.
Thus, the terahertz biometric imaging package may comprise a transmitter element arranged to emit terahertz radiation for illuminating the object.
The transmitter element and the array of antenna pixels may advantageously be arranged on the same substrate. The substrate may be, as described above, the package top cover or the package bottom part.
For example, an array of transmitter elements may be arranged interleaved with the array of antenna pixels on the same substrate surface. In other words, a mixed array of antenna pixels and transmitter element may be arranged on the substrate in the same plane. This provides for a homogenous illumination of the object as seen from the antenna pixel array, thereby improving image quality.
Various types of transmitter element are conceivable. For example, the transmitter element may comprise a thermal emitting filament which may be provided as a filament blackbody radiation layer, transmitting radiation in the terahertz range. This blackbody radiation layer may be combined with reflector layer to guide the radiation toward the finger where the reflection by the finger will occur. The input power to the black body filament radiator layer can be pulse modulated to ease the noise suppression in the detector circuit, for example using lock-in techniques or similar.
In other possible embodiments, the transmitter element may comprise at least one non-linear device diode or a transistor. One example is a so-called negative resistance oscillator.
The image sensor is operative to detect terahertz radiation in a frequency range excluding the range of visible light. The visible range is understood to be for humans and is in the range of about 400 nm to 700 nm.
The image sensor thus comprises antennas that are designed to couple to the terahertz frequencies of radiation. The image sensor may be operative at frequencies in the terahertz range, e.g. 10 GHz to 100 THz. The image acquired by the image sensor may be considered a terahertz image.
The antennas are micro-sized antennas, e.g. in the range of a micrometers, to thereby fit a large number of antennas in the antenna pixel array. Further, the dimension and design of the antenna and the associated circuitry provides for tuning the antenna pixel for a specific terahertz frequency range. The size of an example antenna pixel may be in the range of about 15 micrometers to about 150 micrometer.
Preferably, the image sensor is operative in the frequency range 10 GHz to 100 THz, preferably, 100 GHz to 50 THz, more preferably 300 GHz to 30 THz.
The outer surface of the package top cover may in some implementations also be referred to as a sensing surface. The operating principle of the described biometric imaging arrangement is that radiation emitted by the transmitter element will be reflected by a finger placed on the sensing surface, and the reflected radiation is received by the antennas in the antenna pixel array which produce sensing signals indicative of the detected terahertz radiation. Alternatively, for the passive detection principle, terahertz radiation produced by the finger itself is received by the antennas. By combining the signals from all the antennas, an image representing the fingerprint can be formed and subsequent biometric verification can be performed.
According to a second aspect of the invention, there is provided an electronic device comprising the terahertz biometric imaging package according to embodiments, and processing circuitry configured to: receive a signal from the terahertz biometric imaging arrangement indicative of a biometric object touching the transparent display panel, perform a biometric authentication procedure based on the detected fingerprint.
Biometric authentication procedures such as fingerprint authentication procedures are known per se, and generally includes to compare features of a verification representation constructed based on an acquired fingerprint image, with features of an enrollment representation constructed during enrollment of a user. If a match with sufficiently high score is found, the user is successfully authenticated.
The biometric object may be a finger, whereby the signal is indicative of a fingerprint of the finger.
The electronic device is a mobile device, such as a mobile phone (e.g. Smart Phone), a tablet, a laptop, smart card, or any other portable device.
Further effects and features of the second aspect of the invention are largely analogous to those described above in connection with the first aspect of the invention.
According to a third aspect of the invention, there is provided a method of manufacturing an image sensor for a terahertz biometric imaging package, the method comprising: providing a package bottom part and a package top cover for a terahertz biometric imaging package; providing a layer of a two-dimensional material on a surface of the package bottom part or the package top cover; patterning the layer of two-dimensional material to form an array of antenna pixels configured to detect terahertz radiation.
Providing a layer of a two-dimensional material on a surface may comprise depositing the two-dimensional material on the surface. Techniques available for depositing the two-dimensional material include standard thin film technology such as e.g. chemical vapor deposition for graphene, or sputtering, pulsed laser deposition, physical vapor deposition, e-beam lithography or photolithography, etching, etc.
In embodiments, the package bottom part and the package top cover may be flexible and transparent films, whereby the method may comprise laminating the flexible and transparent films to each other such that the array of antenna pixels is enclosed therebetween.
The two-dimensional material may be deposited directly on the package bottom or top, or the two-dimensional material may be transferred from a substrate onto the package bottom or top. Other materials needed for the antenna pixels such as metal lines and dielectric materials may be deposited directly on the package bottom or top using known microfabrication techniques.
Further effects and features of the third aspect of the invention are largely analogous to those described above in connection with the first aspect and the second aspect of the invention.
Further features of, and advantages with, the present invention will become apparent when studying the appended claims and the following description. The skilled person realize that different features of the present invention may be combined to create embodiments other than those described in the following, without departing from the scope of the present invention.
These and other aspects of the present invention will now be described in more detail, with reference to the appended drawings showing an example embodiment of the invention, wherein:
In the present detailed description, various embodiments of the terahertz biometric imaging package according to the present invention are herein described with reference to specific implementations. However, it should be noted that the described terahertz biometric imaging package also may be used for other biometric imaging implementations.
Each antenna pixel 106 comprises a power detector including an antenna structure for receiving terahertz radiation, wherein the power detector is configured to convert a detected terahertz radiation to a sensing signal at a lower frequency than the frequency of the terahertz radiation. The lower frequency may be at DC.
Further, a package top cover 108 is arranged to cover the antenna pixel array 104, wherein the image sensor is configured to capture a terahertz image of an object 105 located on an opposite side of the package top cover 108.
A package bottom part 110 is arranged on the other side of the antenna pixel array 104 opposite from the package top cover 108. In this way is the antenna pixel array 104 encapsulated between the package top cover 108 and the package bottom part 110.
The package top cover 108 and the package bottom part 110 are attached to each other with the array 104 of antenna pixels in-between.
The package 100 may include side walls 113 being separate side walls or being part of the package bottom part 110, or being part of the top cover 108, although other possibilities are conceivable as will be described herein.
Using terahertz imaging technology enables for new possibilities in packaging and imaging performance. Firstly
In one advantageous embodiment, the antenna structure 202 and the transistor 204 are made in a two-dimensional material, in a single layer. For example, the two-dimensional material may be graphene although other two-dimensional materials are also conceivable. In some embodiments, the transistor 204 may be a graphene field effect transistor (GFET).
The antenna pixel array 104 in this embodiment may be manufactured using standard thin film technology such as e.g. chemical vapor deposition for graphene, or sputtering, pulsed laser deposition, physical vapor deposition, e-beam lithography or photolithography, etching, etc.
The transistor and antenna together serve to detect, by the antenna, and convert, by the transistor, a detected terahertz radiation impinging on the antennas to a signal at a lower frequency than the frequency of the terahertz radiation. Advantageously, the antenna structure 202 and the transistor 204 are integrated in a single component on-chip.
The antenna pixel 106 is configured as a power detector adapted to detect the terahertz radiation and output a DC or low frequency signal related to the power of the incoming terahertz radiation. The transistor 204 serves as a rectifying element of the power detector 106. In other words, the antennas, i.e. the gate and the source, are configured to receive the terahertz radiation, and the transistor is configured to convert and rectify the received signal to a DC or low frequency signal. The DC or low frequency signal may be read by an ADC.
In other words, now turning to
Accordingly, the sensing signal S is extractable from the image sensor 102, e.g. through suitable feedthroughs in the package top cover or package bottom part, for redirecting to an analogue to digital converter 120 of a read-out circuit.
The antenna structure 202 and the transistor structure 204 may be made in a single layer, thereby providing an antenna pixel array 104 that is relatively simple to manufacture. The antenna may be a planar antenna, thereby providing an image sensor that advantageously barely contributes to the stack-up of the biometric imaging sensor, thus providing a thin image sensor.
Here, the gate G and source S of the bow-tie power detector 210 each comprises a curved distal edge 212 and 214, respectively. In other words, the gate G and source S each comprise one end that is shaped with a predetermined radius of curvature as seen from above. The shape of the distal ends 212 and 214 may be adapted for tuning the operation frequency of the power detector 210. Further, the at least partly circular geometry provided by the curved distal ends 212, 214 advantageously provides a more polarization independent antenna compared to dipole antennas employing more straight geometries.
In
The embodiments shown in
Manufacturing the power detectors from a two-dimensional material, such as graphene, advantageously enables for providing a flexible image sensor if the substrate for the power detector is a flexible substrate. The flexible substrate may comprise of e.g. PET (Polyethylene terephthalate), PEN (Polyethylene naphthalate), or any other similar materials. In embodiments, the top package cover or the bottom cover part is adapted as a substrate for the power detectors.
Preferably, the antenna pixels 106 in the embodiment illustrated in
The bending capability of the terahertz biometric imaging package 300 depends primarily on the flexibility of the substrate where the two-dimensional material for forming the antenna pixels is deposited. The bend angle may be even as large as about 90 degrees or more for some substrates.
The main body 606 is adapted to carry an electrical circuit external to the terahertz biometric imaging package 300. The layer 610 is an inlay layer which may comprise various electrically conductive traces acting as antennas and for connecting electronic components that may be included in the card 604. Layers 608 and 612 are outer layers protecting the inlay layer 610 and may include cosmetic decoration and printing as indicated by the printed “text” located under the transparent terahertz biometric imaging package 300. The layers 608, 610, 612 may be made of PVC and be laminated together. Due to the penetration properties of the terahertz radiation, the terahertz biometric imaging package 300 may be arranged between any two layers and still be able to capture an image of an object contacting the outer surface of the smartcard.
The bendable and transparent terahertz biometric imaging package 300 may equally well be arranged under the uppermost lamination layer 612 of the smart card 604 as on top of the layer 612. Regardless, the transparent terahertz biometric imaging package 300 advantageously does not obstruct the visual appearance of the smart card 604.
Some of the embodiments illustrated herein are directed to a passive sensor that does not require any assisting terahertz illumination of the object being imaged. In other embodiments, the terahertz biometric imaging package comprises a transmitter element arranged to emit terahertz radiation for illuminating the object. In such embodiments, the emitted terahertz radiation is reflected by the object, and subsequently detected by the image sensor.
Turning to
A direct current source 812 is connected through lines 814 and 816 to the gate G and source S, respectively. The DC source 812 is arranged to feed the power detector 500 with a DC voltage. The gate G, and the source S, are connected through the capacitor 818, effectively providing a diode-connected transistor at high frequencies, i.e. the gate G and the source S are electrically shorted through the capacitor 818 at sufficiently high frequencies as tailored by the capacitor, preferably at frequencies exceeding the lower range of the terahertz frequencies desirable to detect for imaging.
Generally, the incoming terahertz radiation is detected through half-wave rectification and low-pass filtering. More specifically, when radiation 801 impinges on the gate G and the source S serving as antennas 502 of the power detector 500, the electrical potential of the gate G and the source S is modulated at the frequency of the incoming terahertz radiation 801, whereby the DC voltage feed is passed to the drain D. However, due to the diode-tied transistor configuration, the output at the drain D, is a half-wave rectified signal. This half-wave rectified signal is filtered through e.g. capacitors and/or inductive components (not shown) such as coils, to thereby provide a DC or low-frequency sensing signal to the multiplexor 802. For example, a capacitor may be inserted in parallel across the drain D, and ground, and/or inductive components may be connected in series with the drain D of the power detector 500. Accordingly, the power detector 500 operates as a rectifying transistor and as an antenna.
Various types or transmitter elements are applicable and
In embodiments, the package bottom part and the package top cover may be flexible and transparent films, the method comprising laminating the flexible and transparent films to each other such that the array of antenna pixels is enclosed therebetween.
Note that the sizes of the antenna pixels, flexible films, package top cover, package bottom part, transmitter element, and other components of the package selected for clarity and are not necessarily to scale.
A control unit may include a microprocessor, microcontroller, programmable digital signal processor or another programmable device. The control unit may also, or instead, include an application specific integrated circuit, a programmable gate array or programmable array logic, a programmable logic device, or a digital signal processor. Where the control unit includes a programmable device such as the microprocessor, microcontroller or programmable digital signal processor mentioned above, the processor may further include computer executable code that controls operation of the programmable device. It should be understood that all or some parts of the functionality provided by means of the control unit (or generally discussed as “processing circuitry”) may be at least partly integrated with the biometric imaging package.
Even though the invention has been described with reference to specific exemplifying embodiments thereof, many different alterations, modifications and the like will become apparent for those skilled in the art. Also, it should be noted that parts of the biometric imaging package may be omitted, interchanged or arranged in various ways, the imaging device yet being able to perform the functionality of the present invention.
Additionally, variations to the disclosed embodiments can be understood and effected by the skilled person in practicing the claimed invention, from a study of the drawings, the disclosure, and the appended claims. In the claims, the word “comprising” does not exclude other elements or steps, and the indefinite article “a” or “an” does not exclude a plurality. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage.
Number | Date | Country | Kind |
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2050277-9 | Mar 2020 | SE | national |
Filing Document | Filing Date | Country | Kind |
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PCT/SE2021/050211 | 3/10/2021 | WO |