Abrasive delivery polishing pads and manufacturing methods thereof

Information

  • Patent Grant
  • 11524384
  • Patent Number
    11,524,384
  • Date Filed
    Monday, July 30, 2018
    6 years ago
  • Date Issued
    Tuesday, December 13, 2022
    a year ago
Abstract
Embodiments of the present disclosure provide for abrasive delivery (AD) polishing pads and manufacturing methods thereof. In one embodiment, a method of forming a polishing article includes forming a sub-polishing element from a first curable resin precursor composition and forming a plurality of polishing elements extending from the sub-polishing element. Forming the plurality of polishing elements includes forming a continuous polymer phase from a second curable resin precursor composition and forming a plurality of discontinuous abrasive delivery features disposed within the continuous polymer phase. The sub-polishing element is formed by dispensing a first plurality of droplets of the first curable resin precursor composition. The plurality polishing elements are formed by dispensing a second plurality of droplets of the second curable resin precursor composition. In some embodiments, the discontinuous abrasive delivery features comprise a water soluble material having abrasive particles interspersed therein.
Description
BACKGROUND
Field

Embodiments of the present disclosure generally relate to a polishing pad, and methods of forming a polishing pad, and more particularly, to a polishing pad used for polishing a substrate in an electronic device fabrication process.


Description of the Related Art

Chemical mechanical polishing (CMP) is commonly used in the manufacture of high-density integrated circuits to planarize or polish a layer of material deposited on a substrate, by contacting the material layer to be planarized with a polishing pad and moving the polishing pad and/or the substrate (and thus the material layer surface) in the presence of a polishing fluid and abrasive particles. Two common applications of CMP are planarization of a bulk film, for example pre-metal dielectric (PMD) or interlayer dielectric (ILD) polishing, where underlying features create recesses and protrusions in the layer surface, and shallow trench isolation (STI) and interlayer metal interconnect polishing, where polishing is used to remove a via, contact or trench fill material from the exposed surface (field) of the layer having the feature extending thereinto.


In a typical CMP process, the substrate is retained in a carrier head that presses the backside of the substrate toward the polishing pad. Material is removed across the material layer surface in contact with the polishing pad through a combination of chemical and mechanical activity that is provided, in part, by the polishing fluid and the abrasive particles. Typically, the abrasive particles are either suspended in the polishing fluid to provide a slurry, or are embedded in the polishing pad, known as a fixed abrasive polishing pad.


When abrasive particles are provided in the polishing fluid (slurry) a non-abrasive polishing pad (i.e. a polishing pad that does not provide the abrasive particles) is typically used to transport the abrasive particles to the material layer of the substrate (herein a conventional CMP process) where the abrasive particles cause mechanical abrasion, and in some embodiments, a chemical reaction, with the substrate surface. In general, slurry is continuously flowed during the polishing portion of the CMP process so that fresh abrasive particles (abrasive particles that have not interacted with the material surface of the substrate) are continuously transported to the material layer of the substrate. The motion of the abrasive particles in a conventional CMP process provides a substantially three dimensional interaction between the polishing pad, the substrate, and the abrasive particles as the abrasive particles are in continuous motion with respect to both the polishing pad and the material surface of the substrate.


In contrast, with a fixed abrasive polishing pad (herein a fixed abrasive CMP process), the abrasive particles are typically integrated into the polishing pad by embedding them in a supporting material, which is often referred to as a binder material, such as an epoxy resin. Generally, during a CMP process, the binder material fixedly holds the abrasive particles in place at the polishing pad surface where they provide mechanical polishing action to, and sometimes chemical reaction with, the material layer of the substrate during the CMP process. The motion of the abrasive particles in a fixed abrasive CMP process provides a substantially two dimensional interaction between the polishing pad (and the abrasive particles embedded therein) and the substrate.


Generally, fixed abrasive polishing pads are superior to standard (non-fixed abrasive polishing pads) in some aspects of polishing performance. For example, using a fixed abrasive pad, there is less undesirable erosion of planar surfaces in areas with high feature density and less undesirable dishing of the upper surface of the film material in recessed features such as trenches, contacts, and lines. However, fixed abrasive polishing pads tend to have lower lifetimes (minutes of polishing per pad), inferior substrate to substrate stability for film removal rate from the substrate surface, and inferior substrate to substrate stability for uniformity of film removal across the substrate from substrate to substrate. Further, methods of forming fixed abrasive polishing pads often involve coating the abrasive particles, at least in part, with a polymer composition which reduces the abrasiveness and/or the chemical potential of the abrasive particles, which undesirably impacts CMP polishing performance. In contrast, slurries used in conventional CMP processes are costly and require specialized distribution systems.


Accordingly, what is needed in the art are polishing pads capable of providing and delivering abrasive particles into the polishing fluid (abrasive delivery polishing pads) during CMP, methods of forming abrasive delivery polishing pads, and methods of polishing a substrate using the formed abrasive delivery polishing pads.


SUMMARY

Embodiments herein generally relate to an abrasive delivery (AD) polishing pad comprising water soluble abrasive delivery features disposed in the polishing material of portions of the polishing pad, and methods of forming thereof.


In one embodiment, a method of forming a polishing article includes forming a sub-polishing element from a first curable resin precursor composition and forming a plurality of polishing elements extending from the sub-polishing element. Forming the plurality of polishing elements includes forming a continuous polymer phase from a second curable resin precursor composition and forming a plurality of discontinuous abrasive delivery features disposed within the continuous polymer phase. The sub-polishing element is formed by dispensing a first plurality of droplets of the first curable resin precursor composition. The plurality polishing elements are formed by dispensing a second plurality of droplets of the second curable resin precursor composition. In some embodiments, the discontinuous abrasive delivery features comprise a water soluble material having abrasive particles interspersed therein.


In another embodiment, a polishing article comprises a sub-polishing element comprising a first continuous polymer phase and a plurality of polishing elements extending from the sub-polishing element. The plurality of polishing elements comprises a second continuous polymer phase and a plurality of abrasive particle delivery features disposed in the second continuous polymer phase, the abrasive particle delivery features comprising a support material having abrasive particles interspersed therein.


In another embodiment, a polishing article comprises a sub-polishing element comprising a first reaction product of a plurality of first droplets of a first precursor composition and a plurality of polishing elements extending from the sub-polishing element comprising a second reaction product of a plurality of droplets of a second precursor composition. In some embodiments, the polishing article further comprises a plurality of discontinuous abrasive delivery features disposed in one or more of the plurality of polishing elements comprising a water soluble support material having abrasive particles interspersed therein. In some embodiments, the polishing article further comprises a plurality of interfaces coupling the sub-polishing element to the plurality of polishing elements, wherein one or more of the plurality of interfaces comprises a third reaction product of the first precursor composition and the second precursor composition.





BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only typical embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.



FIG. 1 is a schematic sectional view of a polishing system using an abrasive delivery (AD) polishing pad formed according to embodiments described herein.



FIGS. 2A-2B are schematic perspective sectional views of abrasive delivery (AD) polishing pads formed according to embodiments described herein.



FIGS. 2C and 2D are close up sectional views of a portion of either of the abrasive delivery (AD) polishing pads shown in FIGS. 2A and 2B.



FIG. 3A is a schematic sectional view of an additive manufacturing system used to form abrasive delivery (AD) polishing pads, according to embodiments described herein.



FIGS. 3B and 3C illustrate a curing process using the additive manufacturing system of FIG. 3A.



FIG. 4A is a flow diagram of a method of forming an abrasive delivery feature, according to some embodiments.



FIGS. 4B-4D illustrate the method shown in FIG. 4.



FIG. 5 is a schematic top view of an abrasive delivery (AD) polishing pad used with web based or roll-to-roll type polishing system, formed according to embodiments described herein.



FIG. 6 is a flow diagram illustrating a method of forming an abrasive deliver (AD) polishing pad, according to embodiments described herein.





DETAILED DESCRIPTION

Embodiments described herein generally relate to polishing articles and methods for manufacturing polishing articles used in a polishing process. More specifically, embodiments herein relate to abrasive delivery (AD) polishing pads, and methods of manufacturing AD polishing pads, which provide abrasive particles to the interface between the polishing pad surface and a material surface of a substrate. The AD polishing pads facilitate three dimensional interactions between the polishing pad, the abrasive particles, and the substrate during the polishing process. The ability to deliver abrasive particles to the polishing interface enables a polishing process without the use of expensive slurries and slurry distribution systems. However, in some embodiments, a polishing slurry is used to supplement the abrasive particles provided by the AD polishing pad.


Herein the polishing articles described as polishing pads, and methods of forming thereof, are applicable to other polishing applications including, for example, buffing. Further, although the discussion is generally in relation to chemical mechanical polishing (CMP) processes, the articles and methods are also applicable to other polishing processes using both chemically active and chemically inactive polishing fluids. In addition, embodiments described herein may be used in at least the following industries: aerospace, ceramics, hard disk drive (HDD), MEMS and Nano-Tech, metalworking, optics and electro-optics, and semiconductor, among others.


Embodiments of the present disclosure provide for abrasive delivery (AD) polishing pads that include discontinuous abrasive delivery features disposed within a polishing pad material. The AD polishing pads are formed using an additive manufacturing process, such as a two-dimensional 2D or three-dimensional 3D inkjet printing process. Additive manufacturing processes, such as the three-dimensional printing (“3D printing”) process described herein, enable the formation of AD polishing pads with discrete polishing regions, polishing elements, and/or polishing features having unique properties and attributes. Generally, the polymers of the polishing elements form chemical bonds, for example covalent bonds or ionic bonds, with the polymers of adjacent polishing elements at the interfaces thereof. The chemical bonds typically comprise the reaction product of one or more curable resin precursors used to form adjacent polishing elements. Because the polishing elements are linked with adjacent polishing elements by chemical bonding, the interfaces are stronger and more robust than polishing pads having discrete elements attached using other methods, such as with adhesive layers or by thermal bonding. Stronger interfaces allow for the use of a more aggressive polishing or conditioning process therewith when desired.



FIG. 1 is a schematic sectional view of an example polishing system 100 using an AD polishing pad 200 formed according to the embodiments described herein. Typically, the AD polishing pad 200 is secured to a platen 102 of the polishing system 100 using an adhesive, such as a pressure sensitive adhesive, disposed between the AD polishing pad 200 and the platen 102. A substrate carrier 108, facing the platen 102 and the AD polishing pad 200 mounted thereon, has a flexible diaphragm 111 configured to impose different pressures against different regions of a substrate 110 while urging the material surface of the substrate 110 against the polishing surface of the AD polishing pad 200. The substrate carrier 108 includes a carrier ring 109 surrounding the substrate 110. During polishing, a downforce on the carrier ring 109 urges the carrier ring 109 against the AD polishing pad 200 to prevent the substrate 110 from slipping from the substrate carrier 108. The substrate carrier 108 rotates about a carrier axis 114 while the flexible diaphragm 111 urges the substrate 110 against the polishing surface of the AD polishing pad 200. The platen 102 rotates about a platen axis 104 in an opposite direction from the rotation of the substrate carrier 108 while the substrate carrier 108 sweeps back and forth from an inner diameter of the platen 102 to an outer diameter of the platen 102 to, in part, reduce uneven wear of the AD polishing pad 200. Herein, the platen 102 and the AD polishing pad 200 have a surface area that is greater than a surface area of the substrate 110, however, in some polishing systems, the AD polishing pad 200 has a surface area that is less than the surface area of the substrate 110.


During polishing, a fluid 116 is introduced to the AD polishing pad 200 through a fluid dispenser 118 positioned over the platen 102. Typically, the fluid 116 is a polishing fluid (including water), a polishing slurry, a cleaning fluid, or a combination thereof. In some embodiments, the fluid 116 us a polishing fluid comprising a pH adjuster and/or chemically active components, such as an oxidizing agent, to enable chemical mechanical polishing of the material surface of the substrate 110 in conjunction with the abrasives of the AD polishing pad 200.


Typically, the polishing system 100 includes a pad conditioning assembly 120 that comprises a conditioner 128, such as a fixed abrasive conditioner, for example a diamond conditioner. The conditioner 128 is coupled to a conditioning arm 122 having an actuator 126 that rotates the conditioner 128 about its center axis. while a downforce is applied to the conditioner 128 as it sweeps across the AD polishing pad 200 before, during, and/or after polishing the substrate 110. The conditioner 128 abrades and rejuvenates the AD polishing pad 200 and/or cleans the AD polishing pad 200 by removing polish byproducts or other debris from the polishing surface thereof.



FIGS. 2A and 2B are schematic perspective sectional views of AD polishing pads 200a, 200b formed according to embodiments described herein. The AD polishing pads 200a, 200b can be used as the AD polishing pad 200 in the polishing system 100 of FIG. 1. In FIG. 2A, the AD polishing pad 200a comprises a plurality of polishing elements 204a that are disposed within a sub-polishing element 206a, and extend from a surface of the sub-polishing element 206a. One or more of the plurality of polishing elements 204a have a first thickness 212, the sub-polishing element 206a extends beneath the polishing element 204a at a second thickness 213, and the polishing pad 200a has an overall third thickness 215. As illustrated in FIGS. 2A and 2B, the polishing elements 204a, 204b are supported by a portion of the sub-polishing element 206a, 206b (e.g., portion within the first thickness 212). Therefore, when a load is applied to the polishing surface 201 of the AD polishing pads 200a, 200b (e.g., top surface) by a substrate during processing, the load will be transmitted through the polishing elements 204a, 204b and a portion of the sub-polishing element 206a, 206b located therebeneath.


As shown in FIG. 2A, the plurality of polishing elements 204a include a post 205 disposed in the center of the AD polishing pad 200a and a plurality of concentric rings 207 disposed about the post 205 and spaced radially outwardly therefrom. The plurality of polishing elements 204a and the sub-polishing element 206a define a plurality of circumferential channels 218 disposed in the AD polishing pad 200a between each of the polishing elements 204a and between a plane of the polishing surface 201 of the AD polishing pad 200a and a surface of the sub-polishing element 206a. The plurality of channels 218 enable the distribution of polishing fluid 116 across the AD polishing pad 200a and to the interface region between the AD polishing pad 200a and the material surface of a substrate 110. In other embodiments, the patterns of the polishing elements 204a are rectangular, spiral, fractal, random, another pattern, or combinations thereof. Herein, a width 214 of the polishing element(s) 204a, 204b is between about 250 microns and about 5 millimeters, such as between about 250 microns and about 2 millimeters. A pitch 216 between the polishing element(s) 204a is between about 0.5 millimeters and about 5 millimeters. In some embodiments, the width 214 and/or the pitch 216 varies across the radius of the AD polishing pad 200a, 200b to define zones of pad material properties and/or abrasive particle concentration. Additionally, the center of the series of polishing elements 204a, b may be offset from the center of the sub-polishing element 206a, b.


In FIG. 2B, the polishing elements 204b are shown as circular cylindrical columns extending from the sub-polishing element 206b. In other embodiments, the polishing elements 204b are of any suitable cross-sectional shape, for example columns with toroidal, partial toroidal (e.g., arc), oval, square, rectangular, triangular, polygonal, irregular shapes, or combinations thereof. In some embodiments, the shapes and widths 214 of the polishing elements 204b, and the distances therebetween, are varied across the AD polishing pad 200b to tune the hardness, mechanical strength, fluid transport characteristics, or other desirable properties of the complete AD polishing pad 200b.


Herein, the polishing elements 204a, 204b and the sub-polishing elements 206a, 206b each comprise a continuous polymer phase formed from of at least one of oligomeric and/or polymeric segments, compounds, or materials selected from the group consisting of: polyamides, polycarbonates, polyesters, polyether ketones, polyethers, polyoxymethylenes, polyether sulfone, polyetherimides, polyimides, polyolefins, polysiloxanes, polysulfones, polyphenylenes, polyphenylene sulfides, polyurethanes, polystyrene, polyacrylonitriles, polyacrylates, polymethylmethacrylates, polyurethane acrylates, polyester acrylates, polyether acrylates, epoxy acrylates, polycarbonates, polyesters, melamines, polysulfones, polyvinyl materials, acrylonitrile butadiene styrene (ABS), halogenated polymers, block copolymers and random copolymers thereof, and combinations thereof.


In some embodiments, the materials used to form portions of the AD polishing pads 200a, 200b, such as the first polishing elements 204a, 204b and the sub-polishing elements 206a, 206b will include the reaction product of at least one ink jettable pre-polymer composition that is a mixture of functional polymers, functional oligomers, reactive diluents, and/or curing agents to achieve the desired properties of an AD polishing pad 200a, 200b. In some embodiments, interfaces between, and coupling between, the first polishing elements 204a, 204b and the sub-polishing element 206a, 206b include the reaction product of a first pre-polymer composition, such as a first curable resin precursor composition, used to form the first polishing elements 204a, 204b and a second pre-polymer composition, such as a second curable resin precursor composition, used to form the second polishing elements 206a, 206b. In general, the pre-polymer compositions are exposed to electromagnetic radiation, which may include ultraviolet radiation (UV), gamma radiation, X-ray radiation, visible radiation, IR radiation, and microwave radiation and also accelerated electrons and ion beams to initiate polymerization reactions, to form the continuous polymer phases of the polishing elements 204a, 204b and the sub-polishing elements 206a, 206b. For the purposes hereof, we do not restrict the method of polymerization (cure), or the use of additives to aid the polymerization, such as sensitizers, initiators, and/or curing agents, such as through cure agents or oxygen inhibitors.



FIGS. 2C and 2D are close up sectional views of a portion of the polishing pads 200a, 200b shown in FIGS. 2A and 2B. In FIG. 2B one of the plurality of polishing elements 204a, 204b is shown extending inwardly of the sub-polishing element 206a, 206b by sub-height 211 and extending beyond the surface of the sub-polishing element 206a, 206b by a protrusion height 210. Herein, at least a portion of the one of the plurality of polishing elements 204a, 204b includes a plurality of discontinuous abrasive delivery features 217 disposed in a continuous polymer phase of a polishing material 219, where the abrasive delivery features 217 are between about 2 wt % and about 60 wt % of the polishing element 204a, 204b. The abrasive delivery features 217 are formed from a support material, such as a water soluble support material, having abrasive particles interspersed therein. Typically, the support material of the abrasive delivery features 217 is selected from the group consisting of water soluble polymers, water soluble inert materials, water-containing hydrophilic polymers, hydrophilic polymerizable monomers in water, and combinations thereof. Herein, the water soluble support material may be uncured, partially cured, or cured. Abrasive particles interspersed in the support material include silica, aluminum oxide, aluminum silicate ceramic, cerium oxide, silicon carbide, titanium dioxide, alumina-zirconia, and combinations thereof. Typically, the abrasive delivery features 217, formed according to embodiments described herein, have an average feature width 217w of between about 1 μm and about 500 μm and a feature height 217h of between about 1 μm and about 500 μm. Abrasive particles, and/or agglomerations thereof, interspersed in the support material have a mean diameter of between about 10 nm and about 5 μm, such as between about 30 nm and about 500 nm, such as between about 30 nm and 300 nm, for example between about 100 nm and about 150 nm. Typically, the concentration of the abrasive particles in the support material of the abrasive delivery feature 217 is between about 0.1% and about 90 wt. %, such as less than about 50 wt. %, such as between about 1 wt. % and about 50 wt. %, between about 1 wt. % and about 40 wt. %, between about 1 wt. % and about 30 wt. %, between about 1 wt. % and about 20 wt. %, between about 1 wt. % and about 10 wt. %, for example between about 1 wt. % and about 5 wt. %. In some embodiments, the concentration of abrasive particles in the support material of the abrasive delivery feature 217 is more than about 50%, such as more than about 60% such as more than about 70%, for example more than about 80%. In some embodiments, the vertical locations of abrasive delivery features 217 are staggered, such as shown such as shown in FIG. 2C, so that as the AD polishing pad 200a, 200b wears through polishing use, and/or conditioning with a fixed abrasive conditioning disk, new abrasive delivery features 217 are opened at the polishing surface 201 of the polishing elements 204a, 204b at different times, to provide a fresh source of abrasive particles with each successive substrate polished.


In some embodiments, the polishing elements 204a, 200b further include an impermeable material layer 231 disposed over the polishing material 219 and the abrasive delivery features 217. Openings 233 and 235 in the impermeable material layer 231 allow polishing fluids 116 to reach the abrasive delivery features 217 at selected locations. Herein, the polishing material 219 and the material of the impermeable material layer 231 are the same material, however, in other embodiments they are different materials. In operation, the polishing pad 200a, 200b is mounted on the platen 102 and exposed to polishing fluids 116. The water soluble material of the abrasive delivery features 217 initially swells as it absorbs the (aqueous) polishing fluid 116 to push the abrasive particles out of the openings 233 and 235 onto the surface of the polishing element 204a, 204b. The impermeable material layer 231 prevents polishing fluids 116 from reaching the abrasive delivery features 217 except in desired locations. Desired locations are controlled by selectively removing portions of the impermeable material layer 231 to expose the abrasive delivery features 217 underneath. This removal can be done using a laser, mechanical means, or any other method suitable for forming openings 233 through the impermeable material layer 231. Typically, the impermeable material layer 231 is formed of the same material that forms the continuous polymer phase of the polishing elements 204a, 204b.


In one embodiment, two or more of the polishing elements, such as two or more of the polishing elements 204a or two or more of the polishing elements 204b and the sub-polishing elements 206a, 206b within a unitary pad body, are formed from the sequential deposition and post deposition processing and comprise the reaction product of at least one radiation curable resin precursor composition, wherein the radiation curable precursor compositions contain functional polymers, functional oligomers, monomers, and/or reactive diluents that have unsaturated chemical moieties or groups, including but not restricted to: vinyl groups, acrylic groups, methacrylic groups, allyl groups, and acetylene groups. The hardness and/or storage modulus E′ of the materials found within the polishing elements 204a, 204b and the sub-polishing elements 206a, 206b are different, such that the values of the hardness and/or storage modulus E′ for the polishing elements 204a, 204b are greater than those of the sub-polishing elements 206a, 206b. In some embodiments, the material composition and/or material properties of the polishing elements 204a, 204b vary from polishing element to polishing element. Individualized material composition and/or material properties allow for the tailoring of the polishing pad material composition properties for specific polishing needs.


Benefits of abrasive delivery (AD) polishing pads 200a, 200b as described above include the ability to provide abrasive particles to the CMP process through the pad, as opposed to through a slurry delivery system, while maintaining polishing properties of the abrasive particles and the polishing pad that are similar to a conventional (non-fixed abrasive polishing pad) polishing process. Typical AD polishing pad material composition properties that may be selected using the methods and material compositions described herein include storage modulus E′, loss modulus E″, hardness, tan δ, yield strength, ultimate tensile strength, elongation, thermal conductivity, zeta potential, mass density, surface tension, Poison's ratio, fracture toughness, surface roughness (Ra), glass transition temperature (Tg) and other related properties. For example, storage modulus E′ influences polishing results such as the removal rate from, and the resulting-planarity of, the material layer surface of a substrate. Typically, polishing pad material compositions having a medium or high storage modulus E′ provide a higher removal rate for dielectric films used for PMD, ILD, and STI, and cause less undesirable dishing of the upper surface of the film material in recessed features such as trenches, contacts, and lines. Polishing pad material compositions having a low storage modulus E′ generally provide more stable removal rates over the lifetime of the polishing pad, cause less undesirable erosion of a planer surface in areas with high feature density, and cause reduced micro scratching of the material surface. Characterizations as a low, medium, or high storage modulus E′ pad material composition at temperatures of 30° C. (E′30) and 90° C. (E′90) are summarized in Table 1:













TABLE 1







Low Storage Modulus
Medium Modulus
High Modulus



Compositions
Compositions
Compositions



















E′30
5 MPa-100 MPa
100 MPa-500 MPa
500 MPa-3000 MPa


E′90
<17 MPa
<83 MPa
<500 MPa









In embodiments herein, the sub-polishing elements 206a, 206b are formed from materials different from the materials forming the polishing elements 204a, 204b, such as materials having a low (soft) or moderate storage modulus E′. The polishing elements 204a, 204b are typically formed from materials having a medium or high (hard) storage modulus E′. It has been found that CMP processes that use soft or low storage modulus E′ polishing pads tend to have non-uniform planarization results due to the relative ease with which a soft or low storage modulus E′ polishing pad deforms under the applied force generated by the carrier ring 109 (FIG. 1) and the applied force generated by the flexible diaphragm 111 during a CMP process. In other words, the soft, flexible and low storage modulus E′ nature of the material used to form the soft or low storage modulus E′ polishing pad allows the effect of the force, supplied by the carrier ring 109, to be minimized, which improves the ability of the pad to compensate for carrier ring downforce. In contrast, fixed abrasive polishing pads typically utilize a support material that has a high hardness value to physically hold the abrasive particles in place. However, it has been found that CMP processes that use “hard” polishing pad materials, such as a support material comprising an epoxy resin, tend to have non-uniform planarization results at the edges of the substrate 110 being polished (FIG. 1) due to the epoxy resins' low ability to compensate for carrier ring downforce. One of the benefits of the AD polishing pads disclosed herein, in contrast with conventional polishing pads, is the ability to provide abrasive particles at a controlled local (high and/or low) density to the interface of the polishing pad and the material surface of a substrate without the use of a slurry, or slurry distribution system, while maintaining the flexibility to tune material properties of the polishing pad to suit specific process needs.



FIG. 3A is a schematic sectional view of an additive manufacturing system 300 used to form an AD polishing pad, such as polishing pads 200a, 200b, according to embodiments disclosed herein. Herein, the additive manufacturing system 300 includes a first dispensing head 360 for dispensing droplets of a first precursor composition 363, a second dispensing head 370 for dispensing droplets of a second precursor composition 373, and a third dispensing head 380 for dispensing droplets of a third precursor composition. In some embodiments, a forth dispensing head 390 is used to dispense droplets of the second precursor composition 373 to form the impermeable material layer 231. In other embodiments, the impermeable material layer 231 is formed using the second dispensing head. Typically, the dispensing heads 360, 370, 380, 390 move independently of each other and independently of a manufacturing support 302 during the printing process which enables the placement of droplets of the precursor compositions 363, 373, an 383 at selected locations on the manufacturing support 302 to form a polishing pad, such as the polishing pads 200a, 200b. The selected locations are collectively stored as a CAD-compatible printing pattern which is readable by an electronic controller 305 that directs the motion of the manufacturing support 302, the motion of the dispensing head 360, 370, 380 and the delivery of the droplets from one or more nozzles 335.


Herein, the first precursor composition 363 is used to form the sub-polishing elements 206a, 206b, and the second and third precursor compositions 373 and 383 are used to form the polishing elements 204a, 204b of the AD polishing pads 200a, 200b shown in FIGS. 2B-2C. The first and second precursor compositions 363 and 373 each comprise a mixture of one or more of functional polymers, functional oligomers, monomers, and/or reactive diluents that are at least monofunctional, and undergo polymerization when exposed to free radicals, Lewis acids, and/or electromagnetic radiation.


Examples of functional polymers include multifunctional acrylates including di, tri, tetra, and higher functionality acrylates, such as 1,3,5-triacryloylhexahydro-1,3,5-triazine or trimethylolpropane triacrylate.


Examples of functional oligomers include monofunctional and multifunctional oligomers, acrylate oligomers, such as aliphatic urethane acrylate oligomers, aliphatic hexafunctional urethane acrylate oligomers, diacrylate, aliphatic hexafunctional acrylate oligomers, multifunctional urethane acrylate oligomers, aliphatic urethane diacrylate oligomers, aliphatic urethane acrylate oligomers, aliphatic polyester urethane diacrylate blends with aliphatic diacrylate oligomers, or combinations thereof, for example bisphenol-A ethoxylate diacrylate or polybutadiene diacrylate. In one embodiment, the functional oligomer comprises tetrafunctional acrylated polyester oligomer available from Allnex Corp. of Alpharetta, Ga. as EB40® and the functional oligomer comprises an aliphatic polyester based urethane diacrylate oligomer available from Sartomer USA of Exton, Pa. as CN991.


Examples of monomers include both mono-functional monomers and multifunctional monomers. Mono-functional monomers include tetrahydrofurfuryl acrylate (e.g. SR285 from Sartomer®), tetrahydrofurfuryl methacrylate, vinyl caprolactam, isobornyl acrylate, isobornyl methacrylate, 2-phenoxyethyl acrylate, 2-phenoxyethyl methacrylate, 2-(2-ethoxyethoxy)ethyl acrylate, isooctyl acrylate, isodecyl acrylate, isodecyl methacrylate, lauryl acrylate, lauryl methacrylate, stearyl acrylate, stearyl methacrylate, cyclic trimethylolpropane formal acrylate, 2-[[(Butylamino) carbonyl]oxy]ethyl acrylate (e.g. Genomer 1122 from RAHN USA Corporation), 3,3,5-trimethylcyclohexane acrylate, or mono-functional methoxylated PEG (350) acrylate. Multifunctional monomers include diacrylates or dimethacrylates of diols and polyether diols, such as propoxylated neopentyl glycol diacrylate, 1,6-hexanediol diacrylate, 1,6-hexanediol dimethacrylate, 1,3-butylene glycol diacrylate, 1,3-butylene glycol dimethacrylate 1,4-butanediol diacrylate, 1,4-butanediol dimethacrylate, alkoxylated aliphatic diacrylate (e.g., SR9209A from Sartomer®), diethylene glycol diacrylate, diethylene glycol dimethacrylate, dipropylene glycol diacrylate, tripropylene glycol diacrylate, triethylene glycol dimethacrylate, alkoxylated hexanediol diacrylates, or combinations thereof, for example SR562, SR563, SR564 from Sartomer®.


Examples of reactive diluents include monoacrylate, 2-ethylhexyl acrylate, octyldecyl acrylate, cyclic trimethylolpropane formal acrylate, caprolactone acrylate, isobornyl acrylate (IBOA), or alkoxylated lauryl methacrylate.


In some embodiments, the first and/or second precursor compositions 363 and 373 further comprise one or more photoinitiators. Photoinitiators used herein include polymeric photoinitiators and/or oligomer photoinitiators, such as benzoin ethers, benzyl ketals, acetyl phenones, alkyl phenones, phosphine oxides, benzophenone compounds and thioxanthone compounds that include an amine synergist, combinations thereof, and equivalents thereof. For example, in some embodiments photoinitiators include Irgacure® products manufactured by BASF of Ludwigshafen, Germany, or equivalent compositions.


Herein, the third precursor composition 383 comprises a water-soluble polymer, a water-soluble inert material, a water-containing hydrophilic polymer, a hydrophilic polymerizable monomer in water, and combinations thereof and abrasive particles, including silica, aluminum oxide, aluminum silicate ceramic, cerium oxide, silicon carbide, titanium dioxide, alumina-zirconia, and combinations thereof.


Examples of water soluble polymers, such as hydrogels, include 1-vinyl-2-pyrrolidone, vinylimidazole, polyethylene glycol diacrylate, acrylic acid, sodium styrenesulfonate, Hitenol BC10®, Maxemul 6106®, hydroxyethyl acrylate and [2-(methacryloyloxy)ethyltrimethylammonium chloride, 3-allyloxy-2-hydroxy-1-propanesulfonic acid sodium, sodium 4-vinylbenzenesulfonate, [2-(methacryloyloxy)ethyl]dimethyl-(3-sulfopropyl)ammonium hydroxide, 2-acrylamido-2-methyl-1-propanesulfonic acid, vinylphosphonic acid, allyltriphenylphosphonium chloride, (vinylbenzyl)trimethylammonium chloride, allyltriphenylphosphonium chloride, (vinylbenzyl)trimethylammonium chloride, E-SPERSE® RS-1618, E-SPERSE® RS-1596, Methoxy Polyethylene Glycol Monoacrylate, Methoxy Polyethylene Glycol Diacrylate, Methoxy Polyethylene Glycol Triacrylate, combinations thereof, and equivalents thereof, where E-SPERSE products are available from Ethox Chemicals, LLC in Greenville, S.C.


Examples of water soluble inert materials include glycols (e.g., polyethylene glycols), glycol-ethers, and amines. In one embodiment, the water-soluble inert material is selected from the group comprising ethylene glycol, butanediol, dimer diol, propylene glycol-(1,2) and propylene glycol-(1,3), octane-1,8-diol, neopentyl glycol, cyclohexane dimethanol (1,4-bis-hydroxymethylcyclohexane), 2-methyl-1,3-propane diol, glycerine, trimethylolpropane, hexanediol-(1,6), hexanetriol-(1,2,6) butane triol-(1,2,4), trimethylolethane, pentaerythritol, quinitol, mannitol and sorbitol, methylglycoside, also diethylene glycol (DEG), triethylene glycol, tetraethylene glycol, polyethylene glycols, dibutylene glycol, polybutylene glycols, ethylene glycol, ethylene glycol monobutyl ether (EGMBE), diethylene glycol monoethyl ether, ethanolamine, diethanolamine (DEA), triethanolamine (TEA), and combinations thereof.


Examples of water-containing hydrophilic polymers include vinyl polymers such as polyvinyl alcohol, polyvinylpyrrolidone (PVP) and polyvinyl methyl ether.


Examples of hydrophilic polymerizable monomers include triethanolamine (TEA) surfactant, polyoxyethylene alkyl phenyl ether ammonium sulfates, polyoxyethylene alkyl phenyl ethers, anionic phosphate esters, and combinations thereof. In one embodiments, the water-containing hydrophilic polymers are selected from Hitenol™ (polyoxyethylene alkyl phenyl ether ammonium sulfate) and Noigen™ (polyoxyethylene alkyl phenyl ether) surfactants commercially available from Dai-lchi Kogyo Seiyaku Co., Ltd. of Japan; and the Maxemul™ (anionic phosphate ester) surfactants commercially available from Uniqema of The Netherlands. Suitable grades of some of the materials listed above may include Hitenol BC-10™, Hitenol BC-20™, Hitenol BC-30™, Noigen RN-10™, Noigen RN-20™, Noigen RN-30™, Noigen RN-40™, and Maxemul 6106™, which has both phosphonate ester and ethoxy hydrophilicity, a nominal C18 alkyl chain with an acrylate reactive group, and 6112™.


In some embodiments, the third precursor composition 383 comprises poly(lactic-co-glycolic acid) (PLGA).


In some embodiments, the third precursor composition 383 further includes one or more of the first precursor composition 363, a diluent, a photoinitiator, and a dispersion and/or suspension agent. Dispersion and/or suspension agents are typically used to stabilize the abrasive particles within a liquid suspension, for example by increasing the electrostatic repulsion (zeta potential) between abrasive particles. Dispersion and/or suspension agents can be used to enable a homogenous suspension of the abrasive particles in the liquid of a precursor compositions, such as the third precursor composition 383. Examples of dispersion and/or suspension agents include Hyper® products, such as HypermerKD4 and Hyper KD57, available from Croda, Inc., of New Castle, Del., USA, or BYK Dis2008 or BYK9152 available from BYK-Gardner GmbH of Germany.


In one exemplary embodiment, the third precursor composition 383 comprises diacrylate, diethylene glycol (DEG), and ceria, where a ratio of diacrylate to DEG by weight is less than about 1:5 and the concentration of ceria is between about 0.1% and about 90 wt. %.


In some embodiments, the third precursor 383 is milled using a probe sonicator to break up larger agglomerations of abrasive particles into smaller agglomerations, and or individual particles, having a mean diameter between about 30 nm and about 300 nm. In other embodiments, other types of milling processes, for example ball milling, are used to reduce larger agglomerations of abrasive particles to desirable sizes either before, during, or after mixing of the precursor.


In some embodiments, the abrasive particles are treated with a surface modifying organic compound to functionalize the surfaces thereof. Herein, the functionalized abrasive particles comprise at least one polymerizable group chemically bonded to bonding sites on the surfaces thereof. Surface modifying organic compounds herein include organic silane compounds, sulfonic acid compounds, organic phosphoric acid compounds, carboxylic acid compounds, derivatives thereof, or combinations thereof. Examples of organic silane compounds include alkoxy silane, such as trichloro(phenyl)silane, trichloro(hexyl)silane, trichloro(octadecyl)silane, trimethoxy(7-octen-1-yl)silane, trichloro[2-(chloromethyl)allyl]silane, vinyltrimethoxysilane, chloro(dimethyl)vinylsilane, allyltrimethoxysilane, acryloyl chloride, vinyltrimethoxysilane, or combinations thereof. Examples of cyanate compounds include isocyanate based monomers such as tris-[3-(trimethoxysilyl)propyl] isocyanurate or 2-(methacryloyloxy)ethyl isocyanate. Examples of sulfonic or phosphoric acid derivatives include 2-acrylamido-2-methyl-1-propanesulfonic acid or vinyl phosphonate. For some CMP processes, excessive loading (% of polymerizable group terminated bonding sites on surfaces of the abrasive particles) will undesirably influence the mechanical and/or chemical interaction of the abrasive particles with the material surfaces of the substrate 110. Therefore, in some embodiments, it is desirable to limit the loading of functionalized surface sites on the abrasive particles to not more than about 5%.


Typically, layers formed of the droplets of the precursor compositions 363, 373, and 383 dispensed by the dispensing heads 360, 370, 380, and 390 are cured by exposure to radiation 321 from a radiation source 320, such as a visible light source, an ultraviolet light (UV) source, x-ray source, or other type of electromagnetic wave source. Herein, the radiation 321 is UV radiation provided by a UV source. In other embodiments, the precursor compositions 363, 373, and/or 383 are cured by exposure to thermal energy.



FIGS. 3B and 3C illustrate a curing process using the additive manufacturing system 300. FIG. 3B shows a portion of one or more previously formed layers 346 of a polishing element, such as polishing element 204a, 204b. During processing, the dispensing heads, for example dispensing heads 370 and 380, deliver a plurality of droplets 343 and 347 of one or more precursor compositions, such as the second precursor composition 373 and the third precursor composition 383, to a surface 346A of the one or more first layers 346. As used herein, the term “curing” includes partially curing the droplets to form a desired layer, as complete curing of the droplets may limit desirable reactions with droplets of subsequently deposited layers. The plurality of droplets 343 and 347 form one of a plurality of second layers 348 which, in FIG. 3B, includes a cured portion 348A and an uncured portion 348B where the cured portion has been exposed to radiation 321 from the radiation source 320. In embodiments herein, the cured portion comprises the reaction product of the first precursor composition 363, the reaction product of the second precursor composition 373, and/or an uncured third precursor composition 383, partially cured third precursor composition 383, and/or the reaction product of the third precursor composition 383. Herein, the thickness of the cured portion 348A of the first layer is between about 0.1 micron and about 1 mm, such as between about 5 microns and about 100 microns, for example between about 25 microns and about 30 microns.



FIG. 3C is a close up cross-sectional view of a droplet 343 dispensed onto the surface 346A of the one or more previously formed layers 346. As shown in FIG. 3C, once dispensed onto the surface 346A, the droplet 343 spreads to a droplet diameter 343A having a contact angle α. The droplet diameter 343A and contact angle α are a function of at least the material properties of the precursor composition, the energy at the surface 346A (surface energy) of the one or more previously formed layers 346, and time. In some embodiments, the droplet diameter 343A and the contact angle α will reach an equilibrium after a short amount of time, for example less than about one second, from the moment that the droplet contacts the surface 346A of the one or more previously formed layers 346. In some embodiments, the droplets 343 are cured before reaching an equilibrium droplet diameter and contact angle α. Typically, the droplets 343 have a diameter of between about 10 and about 200 micron, such as between about 50 micron and about 70 microns before contact with the surface 346A and spread to between about 10 and about 500 micron, between about 50 and about 200 microns, after contact therewith.


Herein, the precursor compositions 363, 373 and 383 are formulated to have a viscosity between about 80 cP and about 110 cP at about 25° C., between about 15 cP and about 30 cP at about 70° C., or between 10 cP and about 40 cP for temperatures between about 50° C. and about 150° C. so that the mixtures may be effectively dispensed through the nozzles 335 of the dispensing heads 360, 370, 380, and 390. In other embodiments, the third precursor composition has a viscosity of less than about 80 cP at 25° C. and less than about 15 cP at 70° C. In some embodiments, the third precursor composition 383 is recirculated or otherwise mechanically agitated to ensure that the abrasive particles remain suspended therein. In some embodiments, the contact angle α of droplets the third precursor 383 on the surface 346A of the previously formed layers 346 is sufficiently large to enable desirable resolution of the abrasive delivery features 217. In some of those embodiments, the third precursor 383 is formulated to form droplets having a contact angle α that is greater than 50°, such as greater than 55°, greater than 60°, greater than 70°, or even greater than 80°. However, in other embodiments, the wetting properties of droplets of the third precursor 383 on the surface 346A of the one or more previously formed layers 346 are not compatible with forming high resolution features as they result in an undesirably small contact angle α, in those embodiments, the method disclosed in FIG. 4A-4D is used to form wells into which droplets of the third precursor 383 are dispensed.



FIG. 4A is a flow diagram of a method 450 of forming an abrasive delivery feature 217 using a curable resin precursor, such as the second precursor 373, to serve as vertical boundaries of the abrasive delivery feature 217, according to some embodiments. FIGS. 4B-4D illustrate the method 450. The method 450 begins at activity 451 with the forming of one or more boundaries of a polishing pad feature, such as the abrasive delivery feature 217 shown in FIGS. 2C and 2D, by dispensing a plurality of boundary droplets 345 about a desired perimeter of the feature. Typically, the boundary droplets 345 are formed of a curable resin precursor, such as in FIG. 4B where the boundary droplets 345 are formed from the second precursor composition 373 disclosed above. The second precursor composition 373 is formulated to control the wetting properties, and thus the contact angle, of the dispensed boundary droplets 345 on the surface 346A on the one or more previously formed layers 346, using embodiments disclosed herein. The contact angle α of the boundary droplets 345 is large enough that the dispensed boundary droplets 345 form substantially vertical sidewalls of the abrasive delivery feature 217. In some embodiments, the contact angle α of a fixed boundary droplet 345 has a value of greater than 50°, such as greater than 55°, greater than 60°, greater than 70°, or even greater than 80°.


The method 450 continues at activity 453 with the partial curing of the plurality of boundary droplets 345 of the curable resin precursor. Herein, the boundary droplets 345 of the curable resin precursor are partially cured by a curing device after the deposition of a layer of the boundary droplets 345. Partially curing the boundary droplets 345 after each layer is formed allows for the boundary droplets 345 to be fixed so they do not move or change their shape as subsequent boundary droplets 345 are deposited upon them. Partially curing the boundary droplets 345 also allows for control of the surface energy of the layer, and thus control of the contact angle α of subsequently deposited droplets. In some embodiments activities 451 and 453 are repeated until a desired height of the boundaries, such as the boundary walls 405 in FIGS. 4C and 4D is reached. In some embodiments, further control of the contact angle α is achieved by partially curing each of the boundary droplets 345 before each of the boundary droplets 345 spreads to its equilibrium size and contact angle. In other embodiments, the curable resin precursor is formulated so that the droplets become fixed in place without partial curing thereof.


The method 450 continues at activity 453, with the forming of the abrasive delivery feature 217 by dispensing one or more abrasive feature precursor droplets 347, such as the third precursor 283 disclosed in FIG. 2A, within the boundary walls 405 formed by the plurality of boundary droplets 345. The boundary walls 405 formed at 451 and 453 from the boundary droplets 345 form a well, such as the well volume 407 defined by boundary walls 405 shown in FIGS. 4C and 4D, that captures, holds or retains subsequently deposited abrasive feature precursor droplets 347. The well volume 407 allows for droplet formulations with high wetting properties and low contact angles to be dispensed without negatively impacting the resolution of the printed abrasive delivery features 217 due to the “wetting” or spreading out of the material found in the abrasive feature precursor formulation across the underlying surface. In some embodiments, the abrasive feature precursor droplets 347 wet the surface 346A of the one or more previously formed layers 346 and spread to fill the well volume 407. In those embodiments, the well volume 407 is filled with the abrasive feature precursor droplets 347 so that the resulting abrasive delivery feature 217 is level with the boundary walls 405 before additional layers of curable resin precursors are deposited across the surface of both the boundary walls 405 and the abrasive delivery feature 217. In other embodiments not shown the well volume 407 is partially filled so that the boundary walls 405 extend around and extend above the level of the abrasive delivery feature 217. A plurality of boundary droplets 345 is then deposited on the abrasive delivery feature 217 until the well volume 407 is filled to the level of the boundary walls 405 in order to “cap” the well. Capping the well in this manner may be beneficial where the contact angle α of the dispensed boundary droplets 345 on the surface of abrasive delivery feature 217 would negatively impact the printing resolution of subsequent layers.


Benefits of abrasive delivery features formed according to the methods disclosed herein are repeatable, and allow for precise dimensions of abrasive delivery features, and precise locating of the abrasive delivery feature locations, within the polishing pad allowing for increased tunability of polishing pad performance. In addition, the method 450 allows for formation of high resolution vertical structures using droplets of precursor formulations that are otherwise incompatible with 3D printing in a vertical direction.



FIG. 5 is a schematic top view of an abrasive delivery (AD) polishing pad 500 used with web based or roll-to-roll type polishing systems. The AD polishing pad 500 is formed using an additive manufacturing system, such as the additive manufacturing system 300 shown in FIGS. 3A-3B. Herein, a portion of the AD polishing pad 500 is disposed over a polishing platen 502 between a first roll 581 and a second roll 582. The AD polishing pad 500 comprises a concentration gradient of abrasive particles bonded to the polishing pad material thereof across the polishing surface 508 thereof. Herein, the AD polishing pad 500 has a first region 508A comprising a low density of abrasive delivery features and/or low concentrations of abrasive particles in the support material of the abrasive delivery features, a second region 508D comprising a high density of abrasive delivery features and/or high concentrations of abrasive particles in the support material of the abrasive delivery features, and intermediate regions 508B, 508C comprising an intermediate density of abrasive delivery features and/or intermediate concentrations of abrasive particles in the support material of the abrasive delivery features. In some embodiments, the regions 508A-D are formed according to embodiments herein from a plurality of precursor compositions, each comprising a different concentration of abrasive particles. In other embodiments, regions of varying concentrations of abrasive particles are formed by alternating droplets of a precursor composition comprising a high concentration of abrasive particles with a precursor composition comprising a low concentration of abrasive particles or with a precursor composition comprising no abrasive particles.



FIG. 6 is a flow diagram illustrating a method 600 of forming a polishing pad, such as the abrasive delivery (AD) polishing pads 200a, 200b of FIG. 2A-2B, according to embodiments described herein.


The method 600 begins at activity 610 by forming a sub-polishing element from a plurality of first droplets of a first curable resin precursor composition, such as the first precursor composition 363 described in FIGS. 3A-3C.


The method 600 continues at activity 620 with forming a plurality of polishing elements, extending from the sub-polishing element, comprising activities 630 and 640. Activity 620 comprises forming a continuous polymer phase by dispending a plurality of second droplets of a second curable resin precursor composition, such as the second precursor composition described in FIGS. 3A-3C. Herein, the first curable resin precursor composition and the second curable resin precursor composition each comprise a mixture of one or more functional polymers, functional oligomers, monomers, and/or reactive diluents. In some embodiments, the first curable resin precursor composition and the second curable resin precursor composition each further comprises one or more photoinitiators.


Activity 640 comprises forming a plurality of discontinuous abrasive delivery features disposed within the continuous polymer phase of the plurality of polishing elements by dispensing one or more droplets of a water soluble precursor composition, the water soluble precursor composition comprising abrasive particles interspersed therein. Herein, the water soluble precursor composition further comprises a water soluble material selected from the group consisting of water soluble polymers, water soluble inert materials, hydrophilic polymers, hydrophilic polymerizable monomers, and combinations thereof. In some embodiments the abrasive particles are selected from the group consisting of silica, aluminum oxide, aluminum silicate ceramic, cerium oxide, silicon carbide, titanium dioxide, alumina-zirconia, and combinations thereof.


In some embodiments, forming the plurality of discontinuous abrasive delivery features comprises dispensing one or more of the plurality of second droplets of the second curable resin precursor composition to form a plurality of polymer layers, wherein one or more of the plurality of the droplets of the second curable resin precursor composition are dispensed to form walls of the polymer layers before one or more droplets of the water soluble precursor composition are dispensed to form an interior of the polymer layers, as described in FIG. 4.


In some embodiments, the water soluble precursor composition is milled before dispensing the one or more third droplets so that the abrasive particles, or agglomerations thereof, have a mean diameter of between about 10 nm and about 300 nm. In embodiments herein, forming the sub-polishing element and forming the plurality of polishing elements comprises exposing the plurality of first droplets and the plurality of second droplets to UV radiation.


The method 600 enables the formation of a polishing pad capable of providing and/or delivering abrasive particles to a polishing interface of the polishing pad surface and a material surface of a substrate through precise location and sizing of water soluble abrasive delivery features and a high resolution thereof.


While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims
  • 1. A polishing article, comprising: a sub-polishing element comprising a first continuous polymer phase; anda plurality of polishing elements extending from the sub-polishing element, each of the plurality of polishing elements comprising: a second continuous polymer phase; anda plurality of abrasive particle delivery features disposed in the second continuous polymer phase, wherein each of the abrasive particle delivery features comprises a water soluble support material having a plurality of abrasive particles interspersed therein.
  • 2. The polishing article of claim 1, wherein the plurality of abrasive particle delivery features have an average width of between 1 μm and about 500 μm.
  • 3. The polishing article of claim 2, wherein the abrasive particles interspersed in the plurality of abrasive particle delivery features have a mean diameter of between about 30 nm and about 300 nm.
  • 4. The polishing article of claim 1, wherein the water soluble material is selected from the group consisting of water soluble polymers, water soluble inert materials, hydrophilic polymers, hydrophilic polymerizable monomers, and combinations thereof.
  • 5. The polishing article of claim 4, wherein the abrasive particles are selected from the group consisting of silica, aluminum oxide, aluminum silicate ceramic, cerium oxide, silicon carbide, titanium dioxide, alumina-zirconia, and combinations thereof.
  • 6. The polishing article of claim 1, wherein the plurality of polishing elements have a first storage modulus that is more than about 100 MPa at 30° C.
  • 7. The polishing article of claim 6, wherein the sub-polishing element has a second storage modulus that is less than about 500 MPa at 30° C., and wherein the second storage modulus is less than the first storage modulus.
  • 8. The polishing article of claim 1, wherein polymers in the subpolishing element and in the plurality of polishing elements are chemically bonded at interfaces thereof.
  • 9. The polishing article of claim 8, wherein portions of the plurality of polishing elements are disposed in the sub-polishing element.
  • 10. The polishing article of claim 8, wherein the first continuous polymer phase is formed from a first precursor composition and the second continuous polymer phase is formed from a second precursor composition and interfaces of one or more of the plurality of polishing elements and the sub-polishing element comprises a reaction product of the first precursor composition and the second precursor composition.
  • 11. A polishing article, comprising: a sub-polishing element comprising a first reaction product of a plurality of first droplets of a first precursor composition;a plurality of polishing elements extending from the sub-polishing element comprising a second reaction product of a plurality of droplets of a second precursor composition;a plurality of discontinuous abrasive delivery features disposed in each of one or more of the plurality of polishing elements, each of the abrasive delivery features comprising a water soluble support material having abrasive particles interspersed therein; anda plurality of interfaces coupling the sub-polishing element to the plurality of polishing elements, wherein one or more of the plurality of interfaces comprises a third reaction product of the first precursor composition and the second precursor composition.
  • 12. The polishing article of claim 11, wherein portions of the plurality of polishing elements are disposed in the sub-polishing element.
  • 13. The polishing article of claim 11, wherein the plurality of abrasive particle delivery features each have an average width of between 1 μm and about 500 μm and the abrasive particles interspersed in the plurality of abrasive particle delivery features have a mean diameter of between about 30 nm and about 300 nm.
CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims benefit of U.S. Provisional Application Ser. No. 62/542,136, filed on Aug. 7, 2017, which is herein incorporated by reference in its entirety.

US Referenced Citations (655)
Number Name Date Kind
2001911 Wooddell et al. May 1935 A
3357598 Kraft Dec 1967 A
3741116 Green et al. Jun 1973 A
4459779 Shen Jul 1984 A
4575330 Hull Mar 1986 A
4836832 Tumey et al. Jun 1989 A
4841680 Hoffstein et al. Jun 1989 A
4844144 Murphy et al. Jul 1989 A
4942001 Murphy et al. Jul 1990 A
4960673 Beck et al. Oct 1990 A
5096530 Cohen Mar 1992 A
5120476 Scholz Jun 1992 A
5121329 Crump Jun 1992 A
5178646 Barber, Jr. et al. Jan 1993 A
5193316 Olmstead Mar 1993 A
5212910 Breivogel et al. May 1993 A
5287663 Pierce et al. Feb 1994 A
5300417 Lushington et al. Apr 1994 A
5378527 Nakanishi et al. Jan 1995 A
5387380 Cima et al. Feb 1995 A
5470368 Culler Nov 1995 A
5533923 Shamouilian et al. Jul 1996 A
5605499 Sugiyama et al. Feb 1997 A
5605760 Roberts Feb 1997 A
5609517 Lofaro Mar 1997 A
5624303 Robinson Apr 1997 A
5626919 Chapman et al. May 1997 A
5645471 Strecker Jul 1997 A
5664986 Roh Sep 1997 A
5690540 Elliott et al. Nov 1997 A
5738574 Tolles et al. Apr 1998 A
5778481 Amsden et al. Jul 1998 A
5795218 Doan et al. Aug 1998 A
5876268 Lamphere et al. Mar 1999 A
5876490 Ronay Mar 1999 A
5888121 Kirchner et al. Mar 1999 A
5900164 Budinger et al. May 1999 A
5905099 Everaerts et al. May 1999 A
5906863 Lombardi et al. May 1999 A
5910471 Christianson et al. Jun 1999 A
5919082 Walker et al. Jul 1999 A
5921855 Dsterheld et al. Jul 1999 A
5932040 Audisio Aug 1999 A
5932290 Lombardi et al. Aug 1999 A
5940674 Sachs et al. Aug 1999 A
5944583 Cruz et al. Aug 1999 A
5951380 Kim Sep 1999 A
5965460 Rach et al. Oct 1999 A
5976000 Hudson Nov 1999 A
5984769 Bennett et al. Nov 1999 A
5989111 Lamphere et al. Nov 1999 A
5989470 Doan et al. Nov 1999 A
6017609 Akamatsu et al. Jan 2000 A
6022264 Cook et al. Feb 2000 A
6029096 Manners et al. Feb 2000 A
6036579 Cook et al. Mar 2000 A
6062968 Sevilla et al. May 2000 A
6077581 Kuramochi et al. Jun 2000 A
6090475 Robinson et al. Jul 2000 A
6095902 Reinhardt Aug 2000 A
6117000 Anjur et al. Sep 2000 A
6121143 Messner et al. Sep 2000 A
6122564 Koch et al. Sep 2000 A
6126532 Sevilla et al. Oct 2000 A
6155910 Lamphere et al. Dec 2000 A
6176992 Talieh Jan 2001 B1
6206759 Agarwal et al. Mar 2001 B1
6210254 Cook et al. Apr 2001 B1
6213845 Elledge Apr 2001 B1
6228133 Thurber et al. May 2001 B1
6231629 Christianson et al. May 2001 B1
6231942 Blizard et al. May 2001 B1
6241596 Osterheld et al. Jun 2001 B1
6254460 Walker et al. Jul 2001 B1
6257973 Fernand Guiselin Jul 2001 B1
6267641 Vanell et al. Jul 2001 B1
6273806 Bennett et al. Aug 2001 B1
6309276 Tsai et al. Oct 2001 B1
6309282 Wright et al. Oct 2001 B1
6319108 Adefris et al. Nov 2001 B1
6322728 Brodkin et al. Nov 2001 B1
6325706 Krusell et al. Dec 2001 B1
6328634 Shen et al. Dec 2001 B1
6332832 Suzuki Dec 2001 B1
6338901 Veerasamy Jan 2002 B1
6361411 Chopra et al. Mar 2002 B1
6361832 Agarwal et al. Mar 2002 B1
6368184 Beckage Apr 2002 B1
6390890 Molnar May 2002 B1
6398466 Wheeler et al. Jun 2002 B1
6399501 Birang et al. Jun 2002 B2
6402604 Guiselin Jun 2002 B2
6423255 Hoechsmann et al. Jul 2002 B1
6428586 Yancey Aug 2002 B1
6454634 James et al. Sep 2002 B1
6477926 Swisher et al. Nov 2002 B1
6488570 James et al. Dec 2002 B1
6500053 James et al. Dec 2002 B2
6506097 Adams et al. Jan 2003 B1
6518162 Ono et al. Feb 2003 B2
6520834 Marshall Feb 2003 B1
6520847 Osterheld et al. Feb 2003 B2
6544373 Chen et al. Apr 2003 B2
6548407 Chopra et al. Apr 2003 B1
6569373 Napadensky May 2003 B2
6582283 James et al. Jun 2003 B2
6585563 Redeker et al. Jul 2003 B1
6586494 Mejiritski et al. Jul 2003 B2
6592443 Kramer et al. Jul 2003 B1
6641463 Molnar Nov 2003 B1
6641471 Pinheiro et al. Nov 2003 B1
6645061 Bennett et al. Nov 2003 B1
6682402 Roberts et al. Jan 2004 B1
6684704 Obeng Feb 2004 B1
6685548 Chen et al. Feb 2004 B2
6692338 Kirchner Feb 2004 B1
6699115 Osterheld et al. Mar 2004 B2
6719818 Birang et al. Apr 2004 B1
6736709 James et al. May 2004 B1
6736714 Dudovicz May 2004 B2
6746225 McHugh Jun 2004 B1
6746311 Kessel Jun 2004 B1
6749485 James et al. Jun 2004 B1
6749714 Ishikawa et al. Jun 2004 B1
6773474 Koehnle et al. Aug 2004 B2
6773475 Ohishi Aug 2004 B2
6783436 Muldowney Aug 2004 B1
6790883 Ogawa et al. Sep 2004 B2
6796880 Redeker et al. Sep 2004 B2
6811680 Chen et al. Nov 2004 B2
6811937 Lawton Nov 2004 B2
6815570 Negiz et al. Nov 2004 B1
6833046 Wright Dec 2004 B2
6838149 Lugg Jan 2005 B2
6840843 Jones et al. Jan 2005 B2
6843711 Muldowney Jan 2005 B1
6847014 Benjamin et al. Jan 2005 B1
6855588 Liao et al. Feb 2005 B1
6860793 Budinger et al. Mar 2005 B2
6860802 Vishwanathan et al. Mar 2005 B1
6866807 Comb et al. Mar 2005 B2
6869350 Roberts et al. Mar 2005 B2
6875096 Park et al. Apr 2005 B2
6875097 Grunwald Apr 2005 B2
6887137 Lee et al. May 2005 B2
6896593 Prasad May 2005 B2
6913517 Prasad Jul 2005 B2
6935931 Prasad Aug 2005 B2
6955588 Anderson, II et al. Oct 2005 B1
6984163 Roberts Jan 2006 B2
6991517 Redeker et al. Jan 2006 B2
6991528 Hu et al. Jan 2006 B2
6998166 Prasad Feb 2006 B2
7018560 Liu et al. Mar 2006 B2
7029747 Huh et al. Apr 2006 B2
7044836 Sun et al. May 2006 B2
7059949 Elmufdi et al. Jun 2006 B1
7059950 Muldowney Jun 2006 B1
7077879 Ogawa et al. Jul 2006 B2
7120512 Kramer et al. Oct 2006 B2
7125318 Muldowney Oct 2006 B2
7132033 Boldizar et al. Nov 2006 B2
7166017 Minamihaba et al. Jan 2007 B2
7169030 Kulp Jan 2007 B1
7186164 Manens Mar 2007 B2
7186322 Sato et al. Mar 2007 B2
7192336 Kramer et al. Mar 2007 B2
7195544 Prasad Mar 2007 B2
7204742 Prasad Apr 2007 B2
7234224 Naugler et al. Jun 2007 B1
7252871 Crkvenac et al. Aug 2007 B2
7264641 Prasad Sep 2007 B2
7267607 Prasad Sep 2007 B2
7267610 Elmufdi et al. Sep 2007 B1
7268173 Graichen et al. Sep 2007 B2
7300340 Elmufdi et al. Nov 2007 B1
7300619 Napadensky et al. Nov 2007 B2
7311590 Muldowney Dec 2007 B1
7311862 Prasad Dec 2007 B2
7332104 Minamihaba et al. Feb 2008 B2
7357698 Choi Apr 2008 B2
7371160 Cruz May 2008 B1
7377840 Deopura et al. May 2008 B2
7382959 Jacobsen Jun 2008 B1
7425172 Misra et al. Sep 2008 B2
7425250 Basol et al. Sep 2008 B2
7427340 Mavliev et al. Sep 2008 B2
7435161 Prasad et al. Oct 2008 B2
7435165 Prasad Oct 2008 B2
7438636 Kulp et al. Oct 2008 B2
7438795 Wylie et al. Oct 2008 B2
7445847 Kulp Nov 2008 B2
7455571 Kuo et al. Nov 2008 B1
7497885 Kollodge Mar 2009 B2
7513818 Miller et al. Apr 2009 B2
7517277 Muldowney Apr 2009 B2
7517488 Saikin Apr 2009 B2
7520798 Muldowney Apr 2009 B2
7524345 Nevoret et al. Apr 2009 B2
7530880 Bajaj et al. May 2009 B2
7531117 Ederer et al. May 2009 B2
7537446 James et al. May 2009 B2
7582127 Vacassy et al. Sep 2009 B2
7635290 Muldowney Dec 2009 B2
7648645 Roberts et al. Jan 2010 B2
7652286 Isobe et al. Jan 2010 B2
7699684 Prasad Apr 2010 B2
7704122 Misra et al. Apr 2010 B2
7704125 Roy et al. Apr 2010 B2
7731568 Shimomura et al. Jun 2010 B2
7754118 Huh et al. Jul 2010 B2
7762870 Ono et al. Jul 2010 B2
7815778 Bajaj Oct 2010 B2
7828634 Jiang et al. Nov 2010 B2
7840305 Behr et al. Nov 2010 B2
7846008 Bajaj Dec 2010 B2
7871309 Ogawa et al. Jan 2011 B2
7875091 Nevoret et al. Jan 2011 B2
7926521 Izumoto et al. Apr 2011 B2
7935276 Zhou et al. May 2011 B2
7943681 Lee et al. May 2011 B2
7976901 Kume et al. Jul 2011 B2
8047899 Chen et al. Nov 2011 B2
8053487 Ragain, Jr. et al. Nov 2011 B2
8057282 Muldowney Nov 2011 B2
8062102 Park et al. Nov 2011 B2
8062103 Muldowney Nov 2011 B2
8066555 Bajaj Nov 2011 B2
8067814 Takehara et al. Nov 2011 B2
8075372 Prasad Dec 2011 B2
8075745 Bajaj Dec 2011 B2
8083820 Kollodge et al. Dec 2011 B2
8111603 Nishimura et al. Feb 2012 B2
8118641 Kulp et al. Feb 2012 B2
8142860 Vanmaele et al. Mar 2012 B2
8142869 Kobayashi et al. Mar 2012 B2
8172648 Lefevre et al. May 2012 B2
8177603 Bajaj May 2012 B2
8211543 Kato et al. Jul 2012 B2
8257545 Loyack et al. Sep 2012 B2
8260447 Mattes et al. Sep 2012 B2
8282866 Hiraide Oct 2012 B2
8287793 Deopura et al. Oct 2012 B2
8288448 Kulp Oct 2012 B2
8292592 Welch et al. Oct 2012 B2
8292692 Bajaj Oct 2012 B2
8337282 Park et al. Dec 2012 B2
8349706 Noda Jan 2013 B2
8377623 Fong Feb 2013 B2
8380339 Misra et al. Feb 2013 B2
8393934 Sung Mar 2013 B2
8398461 Wang Mar 2013 B2
8409976 Hieslmair Apr 2013 B2
8444890 Drury May 2013 B2
8545292 Shinchi et al. Oct 2013 B2
8546717 Stecker Oct 2013 B2
8562389 Benvegnu et al. Oct 2013 B2
8598523 Stecker et al. Dec 2013 B2
8602851 Lombardo et al. Dec 2013 B2
8647179 Nakayama et al. Feb 2014 B2
8684794 Lefevre et al. Apr 2014 B2
8690978 Amaud et al. Apr 2014 B2
8702479 Huang et al. Apr 2014 B2
8709114 Cantrell et al. Apr 2014 B2
8715035 Roy et al. May 2014 B2
8734206 Chang et al. May 2014 B2
8784721 Philippi et al. Jul 2014 B2
8801949 Lakrout et al. Aug 2014 B2
8821214 Joseph Sep 2014 B2
8845852 Nakamori et al. Sep 2014 B2
8853082 Hanano et al. Oct 2014 B2
8853527 Hieslmair Oct 2014 B2
8864859 Roy et al. Oct 2014 B2
8883392 Napadensky et al. Nov 2014 B2
8888480 Yoo et al. Nov 2014 B2
8894799 Lakrout Nov 2014 B2
8932116 Deopura et al. Jan 2015 B2
8932511 Napadensky Jan 2015 B2
8968058 Kerprich et al. Mar 2015 B2
8980749 Itai et al. Mar 2015 B1
8986585 Cantrell et al. Mar 2015 B2
9017140 Allison et al. Apr 2015 B2
9033764 Kitamura et al. May 2015 B2
9067297 Allison et al. Jun 2015 B2
9067298 Lefevre et al. Jun 2015 B2
9067299 Bajaj et al. Jun 2015 B2
9068085 Kim et al. Jun 2015 B2
9089943 Lipson Jul 2015 B2
9108291 Lakrout Aug 2015 B2
9126304 Kimura Sep 2015 B2
9138858 Benvegnu et al. Sep 2015 B2
9152006 Farrand et al. Oct 2015 B2
9152340 Wu et al. Oct 2015 B2
9156124 Allison et al. Oct 2015 B2
9162340 Joseph et al. Oct 2015 B2
9162341 LeFevre et al. Oct 2015 B2
9211628 Allison et al. Dec 2015 B2
9216546 DeSimone et al. Dec 2015 B2
9254545 Park Feb 2016 B2
9259820 Qian et al. Feb 2016 B2
9259821 Qian et al. Feb 2016 B2
9278424 Roy et al. Mar 2016 B2
9296085 Bajaj et al. Mar 2016 B2
9308620 Schutte et al. Apr 2016 B2
9314897 Qian et al. Apr 2016 B2
9333620 Qian et al. May 2016 B2
9352443 Suen et al. May 2016 B2
9375821 Chen et al. Jun 2016 B2
9375822 Hsu et al. Jun 2016 B2
9393740 Okamoto et al. Jul 2016 B2
9421666 Krishnan et al. Aug 2016 B2
9457520 Bajaj et al. Oct 2016 B2
9469800 Jung Oct 2016 B2
9481069 Chen et al. Nov 2016 B2
9505952 Reiss et al. Nov 2016 B2
9587127 Herlihy et al. Mar 2017 B2
9630249 Toyserkani et al. Apr 2017 B2
9669512 Bajaj et al. Jun 2017 B2
9718129 Ljungblad et al. Aug 2017 B2
9744724 Bajaj et al. Aug 2017 B2
9776361 Krishnan et al. Oct 2017 B2
9868230 Dikovsky et al. Jan 2018 B2
9873180 Bajaj et al. Jan 2018 B2
9950405 Deng Apr 2018 B2
9951054 Li et al. Apr 2018 B2
9956314 Skaria et al. May 2018 B2
9993907 Murugesh et al. Jun 2018 B2
10005236 Yudovin-Farber et al. Jun 2018 B2
10016877 Krishnan et al. Jul 2018 B2
10029405 Bajaj et al. Jul 2018 B2
10086500 Orilall et al. Oct 2018 B2
10220487 Roy et al. Mar 2019 B2
10245704 Eilers et al. Apr 2019 B2
10322491 Orilall et al. Jun 2019 B2
10335994 Napadensky et al. Jul 2019 B2
10384330 Bajaj et al. Aug 2019 B2
10391605 Ganapathiappan et al. Aug 2019 B2
10399201 Ganapathiappan et al. Sep 2019 B2
10406599 Ljungblad et al. Sep 2019 B2
10406801 Bell et al. Sep 2019 B2
10456886 Ganapathiappan et al. Oct 2019 B2
10483235 Chiao et al. Nov 2019 B2
10493691 Krishnan et al. Dec 2019 B2
10537974 Bajaj et al. Jan 2020 B2
10593574 Fung et al. Mar 2020 B2
10618141 Chockalingam et al. Apr 2020 B2
10675789 Dikovsky et al. Jun 2020 B2
10744714 Lopez et al. Aug 2020 B2
10773509 Ng et al. Sep 2020 B2
10821573 Bajaj et al. Nov 2020 B2
10875145 Bajaj et al. Dec 2020 B2
10875153 Bajaj et al. Dec 2020 B2
10876073 Ishida Dec 2020 B2
10919123 Hariharan et al. Feb 2021 B2
10953515 Ganapathiappan et al. Mar 2021 B2
20010008830 Tolles et al. Jul 2001 A1
20010020448 Vaartstra et al. Sep 2001 A1
20010029151 Chopra Oct 2001 A1
20010034089 Yamazaki et al. Oct 2001 A1
20010041511 Lack et al. Nov 2001 A1
20010046834 Ramana et al. Nov 2001 A1
20020016139 Hirokawa et al. Feb 2002 A1
20020058468 Eppert et al. May 2002 A1
20020069591 Yancey Jun 2002 A1
20020077036 Roberts et al. Jun 2002 A1
20020083577 Suzuki Jul 2002 A1
20020112632 Faibish Aug 2002 A1
20020137450 Osterheld et al. Sep 2002 A1
20020173248 Doan et al. Nov 2002 A1
20030019570 Chen et al. Jan 2003 A1
20030022611 Bartlett et al. Jan 2003 A1
20030056870 Comb et al. Mar 2003 A1
20030113509 Lugg Jun 2003 A1
20030134581 Wang et al. Jul 2003 A1
20030153253 Hanamoto et al. Aug 2003 A1
20030153255 Hasegawa et al. Aug 2003 A1
20030166381 Lee et al. Sep 2003 A1
20030181137 Redeker et al. Sep 2003 A1
20030205325 Boyd et al. Nov 2003 A1
20030220061 Prasad Nov 2003 A1
20040003895 Amano et al. Jan 2004 A1
20040014413 Kawahashi et al. Jan 2004 A1
20040033758 Wiswesser Feb 2004 A1
20040055223 Ono et al. Mar 2004 A1
20040058623 Lin et al. Mar 2004 A1
20040092108 Yajima et al. May 2004 A1
20040106367 Walker et al. Jun 2004 A1
20040126575 Koshida et al. Jul 2004 A1
20040133298 Toyserkani et al. Jul 2004 A1
20040154533 Agarwal et al. Aug 2004 A1
20040171340 Prasad Sep 2004 A1
20040173946 Pfeifer et al. Sep 2004 A1
20040175451 Maekawa et al. Sep 2004 A1
20040180611 Tajima et al. Sep 2004 A1
20040187714 Napadensky et al. Sep 2004 A1
20040198185 Redeker et al. Oct 2004 A1
20040224616 Shiho et al. Nov 2004 A1
20040266326 Shiho et al. Dec 2004 A1
20050003189 Bredt et al. Jan 2005 A1
20050016868 Basol et al. Jan 2005 A1
20050020082 Vishwanathan et al. Jan 2005 A1
20050032464 Swisher et al. Feb 2005 A1
20050062900 Kim Mar 2005 A1
20050086869 Park et al. Apr 2005 A1
20050098540 Prasad May 2005 A1
20050101228 Prasad May 2005 A1
20050110853 Gardner et al. May 2005 A1
20050112998 Matsuo et al. May 2005 A1
20050124262 Manens Jun 2005 A1
20050153634 Prasad et al. Jul 2005 A1
20050171224 Kulp Aug 2005 A1
20050194681 Hu et al. Sep 2005 A1
20050215177 Prasad Sep 2005 A1
20050227590 Sung Oct 2005 A1
20050250431 Shih et al. Nov 2005 A1
20050260928 Huh et al. Nov 2005 A1
20050260939 Andrews et al. Nov 2005 A1
20050261150 Yonker et al. Nov 2005 A1
20050274627 Wylie et al. Dec 2005 A1
20050276967 Prasad Dec 2005 A1
20050284536 Kojima et al. Dec 2005 A1
20060019587 Deopura et al. Jan 2006 A1
20060024434 Wang et al. Feb 2006 A1
20060052040 Prasad Mar 2006 A1
20060079159 Naujok et al. Apr 2006 A1
20060096179 Lu et al. May 2006 A1
20060125133 Huh et al. Jun 2006 A1
20060160478 Donohue et al. Jul 2006 A1
20060185256 Nevoret et al. Aug 2006 A1
20060189269 Roy et al. Aug 2006 A1
20060192315 Farr et al. Aug 2006 A1
20060226567 James et al. Oct 2006 A1
20060252900 Bowman et al. Nov 2006 A1
20060276109 Roy et al. Dec 2006 A1
20070007698 Sano Jan 2007 A1
20070009606 Serdy et al. Jan 2007 A1
20070032170 Halley et al. Feb 2007 A1
20070037486 Kang et al. Feb 2007 A1
20070054599 Taylor et al. Mar 2007 A1
20070093185 Naik Apr 2007 A1
20070117393 Tregub et al. May 2007 A1
20070128874 Shida et al. Jun 2007 A1
20070128991 Yoon et al. Jun 2007 A1
20070149096 Nishimura et al. Jun 2007 A1
20070204420 Hornby et al. Sep 2007 A1
20070212979 Preston Sep 2007 A1
20070221287 Izumoto Sep 2007 A1
20070235133 Benassi Oct 2007 A1
20070235904 Saikin Oct 2007 A1
20070243795 Kobayashi et al. Oct 2007 A1
20070269987 Nakano et al. Nov 2007 A1
20080004743 Goers et al. Jan 2008 A1
20080009228 Nagase et al. Jan 2008 A1
20080057845 Prasad Mar 2008 A1
20080060734 Stehle Mar 2008 A1
20080105818 Cohen May 2008 A1
20080157436 Patel et al. Jul 2008 A1
20080207100 Roy et al. Aug 2008 A1
20080211141 Deopura et al. Sep 2008 A1
20080220702 Feng et al. Sep 2008 A1
20080255823 Grant Oct 2008 A1
20080268760 Bajaj et al. Oct 2008 A1
20080314878 Cai et al. Dec 2008 A1
20090011679 Bajaj et al. Jan 2009 A1
20090053976 Roy et al. Feb 2009 A1
20090053983 Hosaka et al. Feb 2009 A1
20090081927 Grumbine et al. Mar 2009 A1
20090093201 Kazuno et al. Apr 2009 A1
20090094902 Hou Apr 2009 A1
20090105363 Napadensky Apr 2009 A1
20090130956 Ohta et al. May 2009 A1
20090133716 Lee May 2009 A1
20090137121 Hsu et al. May 2009 A1
20090169455 Van Aert et al. Jul 2009 A1
20090206065 Kruth et al. Aug 2009 A1
20090253353 Ogawa et al. Oct 2009 A1
20090270019 Bajaj Oct 2009 A1
20090308553 Souzy et al. Dec 2009 A1
20090308739 Riker et al. Dec 2009 A1
20090311955 Kerprich et al. Dec 2009 A1
20090320379 Jun et al. Dec 2009 A1
20090321979 Hiraide Dec 2009 A1
20100007692 Vanmaele et al. Jan 2010 A1
20100009612 Park et al. Jan 2010 A1
20100011672 Kincaid et al. Jan 2010 A1
20100087128 Nakayama et al. Apr 2010 A1
20100112919 Bonner et al. May 2010 A1
20100120249 Hirose et al. May 2010 A1
20100120343 Kato et al. May 2010 A1
20100130112 Bajaj May 2010 A1
20100140850 Napadensky et al. Jun 2010 A1
20100203815 Bajaj Aug 2010 A1
20100210197 Matsumura et al. Aug 2010 A1
20100221489 Lappalainen et al. Sep 2010 A1
20100255254 Culler Oct 2010 A1
20100323050 Kumagai et al. Dec 2010 A1
20110011217 Kojima Jan 2011 A1
20110014858 Tsai et al. Jan 2011 A1
20110045199 Cong Feb 2011 A1
20110048772 Han Mar 2011 A1
20110059247 Kuzusako et al. Mar 2011 A1
20110077321 Napadensky Mar 2011 A1
20110130077 Litke et al. Jun 2011 A1
20110171890 Nakayama et al. Jul 2011 A1
20110180952 Napadensky Jul 2011 A1
20110183583 Joseph Jul 2011 A1
20110204538 Drury Aug 2011 A1
20110277789 Benson Nov 2011 A1
20110277877 Stehle Nov 2011 A1
20120094487 Kranz et al. Apr 2012 A1
20120178348 Hsu et al. Jul 2012 A1
20120178845 Napadensky et al. Jul 2012 A1
20120281334 Sasaki et al. Nov 2012 A1
20120302148 Bajaj et al. Nov 2012 A1
20120315830 Joseph et al. Dec 2012 A1
20130012108 Li et al. Jan 2013 A1
20130017769 Kimura Jan 2013 A1
20130019570 Weible Jan 2013 A1
20130048018 Wargo et al. Feb 2013 A1
20130052917 Park Feb 2013 A1
20130055568 Dusel et al. Mar 2013 A1
20130059506 Qian et al. Mar 2013 A1
20130059509 Deopura et al. Mar 2013 A1
20130102231 Joseph et al. Apr 2013 A1
20130122705 Babu et al. May 2013 A1
20130137350 Allison et al. May 2013 A1
20130139851 Sin et al. Jun 2013 A1
20130172509 Pawloski et al. Jul 2013 A1
20130183824 Kwon et al. Jul 2013 A1
20130212951 Ahn et al. Aug 2013 A1
20130231032 Swedek et al. Sep 2013 A1
20130247477 Cantrell et al. Sep 2013 A1
20130283700 Bajaj et al. Oct 2013 A1
20130287980 Burdzy et al. Oct 2013 A1
20130307194 Elsey Nov 2013 A1
20130309951 Benvegnu et al. Nov 2013 A1
20130316081 Kovalcik et al. Nov 2013 A1
20130327977 Singh et al. Dec 2013 A1
20130328228 Pettis et al. Dec 2013 A1
20140024216 Stender et al. Jan 2014 A1
20140034229 Xu Feb 2014 A1
20140048970 Batchelder et al. Feb 2014 A1
20140065932 Kazuno et al. Mar 2014 A1
20140109784 Daems et al. Apr 2014 A1
20140117575 Kemperle et al. May 2014 A1
20140127973 Motoshima et al. May 2014 A1
20140163717 Das et al. Jun 2014 A1
20140206268 Lefevre et al. Jul 2014 A1
20140230170 Patel Aug 2014 A1
20140239527 Lee Aug 2014 A1
20140324206 Napadensky Oct 2014 A1
20140364044 Ahn et al. Dec 2014 A1
20140370214 Araki et al. Dec 2014 A1
20140370788 Nair Dec 2014 A1
20150024233 Gunther Jan 2015 A1
20150031781 Landers et al. Jan 2015 A1
20150037601 Blackmore Feb 2015 A1
20150038066 Huang et al. Feb 2015 A1
20150043122 Eto et al. Feb 2015 A1
20150044951 Bajaj et al. Feb 2015 A1
20150045928 Perez et al. Feb 2015 A1
20150056421 Yudovin-Farber et al. Feb 2015 A1
20150056892 Vacassy et al. Feb 2015 A1
20150056895 Fotou et al. Feb 2015 A1
20150061170 Engel et al. Mar 2015 A1
20150065020 Roy et al. Mar 2015 A1
20150072522 Jung Mar 2015 A1
20150084238 Bonassar et al. Mar 2015 A1
20150089881 Stevenson et al. Apr 2015 A1
20150093977 Deopura et al. Apr 2015 A1
20150115490 Reinarz Apr 2015 A1
20150123298 Napadensky May 2015 A1
20150126099 Krishnan et al. May 2015 A1
20150129798 Napadensky May 2015 A1
20150159046 Dinega et al. Jun 2015 A1
20150174826 Murugesh et al. Jun 2015 A1
20150216790 Feng et al. Aug 2015 A1
20150221520 Singh et al. Aug 2015 A1
20150252202 Nerad Sep 2015 A1
20150375361 Qian et al. Dec 2015 A1
20160052103 Qian et al. Feb 2016 A1
20160068996 Lau et al. Mar 2016 A1
20160101500 Fung et al. Apr 2016 A1
20160107287 Bajaj et al. Apr 2016 A1
20160107288 Orilall et al. Apr 2016 A1
20160107290 Bajaj Apr 2016 A1
20160107295 Bajaj et al. Apr 2016 A1
20160107381 Krishnan et al. Apr 2016 A1
20160114458 Bajaj et al. Apr 2016 A1
20160136787 Bajaj et al. May 2016 A1
20160176021 Orilall et al. Jun 2016 A1
20160221145 Huang et al. Aug 2016 A1
20160229023 Lugg et al. Aug 2016 A1
20160236279 Ashton et al. Aug 2016 A1
20160252813 Kitson Sep 2016 A1
20160257856 Reiss et al. Sep 2016 A1
20160271869 Van De Vrie et al. Sep 2016 A1
20160279757 Qian et al. Sep 2016 A1
20160346997 Lewis et al. Dec 2016 A1
20160347002 Bajaj et al. Dec 2016 A1
20160354901 Krishnan et al. Dec 2016 A1
20160375546 Pai et al. Dec 2016 A1
20170036320 Prasad Feb 2017 A1
20170100817 Ganapathiappan et al. Apr 2017 A1
20170120416 Chockalingam et al. May 2017 A1
20170133252 Fung et al. May 2017 A1
20170136603 Ganapathiappan et al. May 2017 A1
20170148539 Prestayko et al. May 2017 A1
20170151648 Huang et al. Jun 2017 A1
20170173865 Dikovsky et al. Jun 2017 A1
20170182629 Lehuu et al. Jun 2017 A1
20170203406 Ganapathiappan et al. Jul 2017 A1
20170203408 Ganapathiappan et al. Jul 2017 A1
20170203409 Lefevre et al. Jul 2017 A1
20170239886 Norikane Aug 2017 A1
20170259396 Yamamura et al. Sep 2017 A1
20170259499 Ng et al. Sep 2017 A1
20170274498 Oh et al. Sep 2017 A1
20180043613 Krishnan et al. Feb 2018 A1
20180100073 Chopra et al. Apr 2018 A1
20180100074 Chopra et al. Apr 2018 A1
20180100075 Chopra et al. Apr 2018 A1
20180158707 Hunter et al. Jun 2018 A1
20180161954 Bajaj et al. Jun 2018 A1
20180229343 Kim et al. Aug 2018 A1
20180236632 Murugesh et al. Aug 2018 A1
20180339397 Redfield Nov 2018 A1
20180339402 Redfield et al. Nov 2018 A1
20180339447 Redfield Nov 2018 A1
20180340104 Hampson et al. Nov 2018 A1
20180371276 Miyano Dec 2018 A1
20190030678 Kumar et al. Jan 2019 A1
20190039204 Chockalingam et al. Feb 2019 A1
20190047112 Fu et al. Feb 2019 A1
20190202024 Ganapathiappan et al. Jul 2019 A1
20190218697 Nakayama et al. Jul 2019 A1
20190224809 Ganapathiappan et al. Jul 2019 A1
20190299357 Orilall et al. Oct 2019 A1
20190299537 McClintock et al. Oct 2019 A1
20190337117 Ganapathiappan et al. Nov 2019 A1
20200001433 Bajaj et al. Jan 2020 A1
20200055161 Chockalingham et al. Feb 2020 A1
20200070302 Ganapathiappan et al. Mar 2020 A1
20200101657 Krishnan et al. Apr 2020 A1
20200135517 Fung et al. Apr 2020 A1
20200147750 Bajaj et al. May 2020 A1
20200156311 Rolland et al. May 2020 A1
20200230781 Chockalingam et al. Jul 2020 A1
20200299834 Bajaj et al. Sep 2020 A1
20200325353 Sridhar et al. Oct 2020 A1
20210013014 Sarode Vishwanath Jan 2021 A1
20210039167 Ashton et al. Feb 2021 A1
20210107116 Bajaj et al. Apr 2021 A1
20210187822 Yudovin-Farber et al. Jun 2021 A1
20210220857 Baker et al. Jul 2021 A1
Foreign Referenced Citations (104)
Number Date Country
1441017 Sep 2003 CN
1851896 Oct 2006 CN
1897226 Jan 2007 CN
101199994 Jun 2008 CN
101428404 May 2009 CN
101612722 Dec 2009 CN
201483382 May 2010 CN
101642898 Sep 2011 CN
202825512 Mar 2013 CN
203542340 Apr 2014 CN
104210108 Dec 2014 CN
104385595 Mar 2015 CN
104400998 Mar 2015 CN
104607639 May 2015 CN
103465155 May 2016 CN
106810215 Jun 2017 CN
19834559 Feb 2000 DE
1078717 Feb 2001 EP
1078717 Jul 2003 EP
1419876 Apr 2008 EP
2025458 Feb 2009 EP
2025459 Feb 2009 EP
2277686 Jan 2011 EP
2431157 Mar 2012 EP
2463082 Jun 2012 EP
2362592 Nov 2001 GB
H07102724 Nov 1995 JP
H08132342 May 1996 JP
09076353 Mar 1997 JP
11-254542 Sep 1999 JP
H11254542 Sep 1999 JP
11-347761 Dec 1999 JP
H11347761 Dec 1999 JP
2000061817 Feb 2000 JP
2001018163 Jan 2001 JP
2001507997 Jun 2001 JP
2002028849 Jan 2002 JP
2002151447 May 2002 JP
3324643 Sep 2002 JP
2003303793 Oct 2003 JP
2004235446 Aug 2004 JP
3566430 Sep 2004 JP
2004243518 Sep 2004 JP
2004281685 Oct 2004 JP
2005074614 Mar 2005 JP
3641956 Apr 2005 JP
2005-294661 Oct 2005 JP
3801100 Jul 2006 JP
2006231464 Sep 2006 JP
2006305650 Nov 2006 JP
2007-005612 Jan 2007 JP
2007-235001 Sep 2007 JP
2007281435 Oct 2007 JP
4077192 Apr 2008 JP
2008207323 Sep 2008 JP
2009-101487 May 2009 JP
4512529 Jul 2010 JP
1693024 Jun 2011 JP
1798713 Oct 2011 JP
2013-018056 Jan 2013 JP
5143528 Feb 2013 JP
5226359 Jul 2013 JP
5248152 Jul 2013 JP
5697889 Apr 2015 JP
2016023209 Feb 2016 JP
5994183 Sep 2016 JP
6422325 Nov 2018 JP
6584895 Oct 2019 JP
10-2000-0075987 Dec 2000 KR
100303672 Nov 2001 KR
2003-0020658 Mar 2003 KR
2005-0052876 Jun 2005 KR
10-0606476 Aug 2006 KR
20070059846 Jun 2007 KR
20080038607 May 2008 KR
20100028294 Mar 2010 KR
1020130138841 Dec 2013 KR
10-2015-0047628 May 2015 KR
20160083922 Jul 2016 KR
I279287 Apr 2007 TW
201510203 Mar 2015 TW
9830356 Jul 1998 WO
0238688 Oct 2002 WO
33089702 Oct 2003 WO
33103959 Dec 2003 WO
2006003697 Jan 2006 WO
2009158665 Dec 2009 WO
2011082155 Jul 2011 WO
2011088057 Jul 2011 WO
2012173885 May 2013 WO
2013128452 Sep 2013 WO
2013162856 Oct 2013 WO
2014039378 Mar 2014 WO
2014095200 Jun 2014 WO
2014141276 Sep 2014 WO
2015040433 Mar 2015 WO
2015055550 Apr 2015 WO
2015111366 Jul 2015 WO
2015118552 Aug 2015 WO
2015120430 Aug 2015 WO
20150161210 Oct 2015 WO
2016140968 Sep 2016 WO
2017066077 Apr 2017 WO
2017078933 May 2017 WO
Non-Patent Literature Citations (57)
Entry
Pan, GuoShun et al.—“Preparation of silane modified SiO2 abrasive particles and their Chemical Mechanical Polishing (CMP) performances,” Wear 273 (2011), pp. 100-104.
PCT International Search Report and Written Opinion dated Nov. 13, 2018, for International Application No. PCT/US2018/043527.
EPOXY Technology Inc.—“Tech Tip 23: Tg—Glass Transition Temperature for Epoxies” brochure, date unknown, 2 pages.
Plastics in Action; 3-D Printing Speeds Prototype Development dated May/Jun. 1998; 2 total pages.
Wikipedia [online]; “3D Printing,” as edited on Jul. 24, 2017 [retrieved on Nov. 9, 2018]; retrieved from the Internet: https://en.wikipedia.org/w/index.php?title=3D_printing&oldid=792037395, 17 pages.
3D Printing: The Next Industrial Revolution: Christopher Barnatt Publisher: CreateSpace Independent Publishing Platform (May 4, 2013) Language: English, ISBN-10:148418176X ISBN-13: 978-1484181768.
C. Wong. “Damping Associated with Incipient Melting in Aluminum-lndium Alloys”, David Taylor Research Center—SME 89-99. Jan. 1990.
Tammy Hickey et al. “Internal Friction and Modules Studies on Austempered Ductile Iron”, Technical Report ARCCB-TR-98001. Jan. 1996. 24 pages.
Rodel. Rodel IC1000 CMP Pad. 1999. 2 pages.
Byoung-Ho Kwon et al. “Dishing and Ersosion in STI CMP”. System IC R&D Center, Hyundai Electronics Industries Co. Ltd. 1999 IEEE. 3 pages.
S. Raghavan et al. “Chemical Mechanical Planariarization in Integrated Circuit Device Manufacturing”. vol. 98-7. 1998. 19 pages.
Rajeev Bajaj et al. “Effect of Polishing Pad Material Properties on Chemical Mechanical Polishing (CMP) Processes”. 1994. 8 pages.
Rodel. Rodel IC1010. 1998. 2 pages.
Peter Freeman et al. “A Study of the Variation of Physical Properties in Random Lots of Urethane Polishing Pads for CMP”. A Rodel Publication. vol. 2, Issue 6. Jun. 1996. 8 Pages.
John J. Aklonis et al. “Introduction to Polymer Viscoelasticity”. Second Edition. 1983. 6 pages.
Weidan Li et al. “The Effect of the Polishing Pad Treatments on the Chemical-Mechanical Polishing of SiO2 Films”, Thin Solid Films 270 (1995). 6 pages.
Peter Krober et al. “Reactive Inkjet Printing of Polyurethanes”, www.rsc.org/materials. Journal of Materials Chemistry. Jan. 6, 2009.
Yu-Lim Jun et al. “Slicing Bitmap Generation and Patterning Technique a SFF System Using UV-Resin”, International Conference on Control, Automation and Systems 2007. 5 Pages.
H. Yang. “High Viscosity Jetting System for 3D Reactive Inkjet Printing”, Additive Manufacturing and 3D Printing Group, University of Nottingham. 9 pages.
I Hermant et al. “A Comparative Study of Polyurethane-Poly(Methyl Methacrylate) Interpenetrating and Semi-1 Interprenelraling Polymer Networks”, vol. 20, No. 1. pp. 85-89, 1984.
Lee M. Cook. “CMP Consumables II: Pad” Chapter 6. Semiconductors and Semimetals, vol. 63. Published 1999. Chemical Mechanical Polishing in Silicon Processing. ISBN: 978-0-12-752172-5.
Antje M.J. Van Den Berg, “Inkjet Printing of Polyurethane Colloidal Suspensions”, www.rsc.org/softmatter. Jul. 13, 2006.
The Dow Chemical Company—“Specialty Elastomers for Automotive TPO Compounds” brochure, Nov. 2006, 8 pages.
The Dow Chemical Company—“DOW VLDPE DFDB-1085 NT, Very Low Density Polyethylene Resin” Technical Data, UL Prospector, Oct. 2003, 2 pages.
Lubrizol Advanced Materials, Inc.—“Lubrizol Engineered Polymers, Estane 58144 TPU” Technical Data, Feb. 2014, 2 pages.
Sekisui Voltek, LLC—“Volara Type EO” Technical Data, Jan. 2010, 2 pages.
Rogers Corporation, High Performance Foams Division, PORON Microcellular Urethanes—Product Availability Booklet, May 1, 2015, 11 pages.
Wikipedia [online]; 3D Printing; 2013; 17 total pages.
Byoung-Ho Kwon et al. “Dishing and Erosion in STI CMP”. System IC R&D Center, Hyundai Electronics Industries Co. Ltd. 1999 IEEE. 3 pages.
S. Raghavan et al. “Chemical Mechanical Planarization in Integrated Circuit Device Manufacturing”. vol. 98-7. 1998. 19 pages.
Van Den Berg, Antje M.J. “Inkjet Printing of Polyurethane Colloidal Suspensions”, www.rsc.org/softmatter. Jul. 13, 2006.
Andrews, Rodney J., et al.—“Glass Transition Temperatures of Polymers,” Polymer Handbook, Fourth Edition, J. Brandrup et al., Editors, A Wiley Interscience Publication, John Wiley & Sons, Inc., 1999, VI / 193-198.
Crow—“Glass Transition Temperature,” webpage, Polymer Properties Database, http://polymerdatabase.com/polymer%20physics/GlassTransition.html, 2015, printed Apr. 10, 2019, 2 pages.
Crow—“Glass Transition Temperatures,” webpage, Polymer Properties Database, http://polymerdatabase.com/polymer%20physics/Polymer%20Tg%20C.html, 2015, printed Apr. 10, 2019, 6 pages.
HUPC—“Dipropylene Glycol Diacrylate (DPGDA)” webpage, CAS No. 57472-68-1_Radiation, http://www.union-pigment.com/china/radiation-curable-57472.html, printed Apr. 8, 2019, 2 pages.
Polysciences, Inc.—“Monomers Product Guide,” 2012, 16 pages.
Whisnaut, David—“Polymer Chemistry: The Glass Transition” webpage, Engineering Libre Texts, https://eng.libretexts.org/Bookshelves/Materials_Schience?Supplemental_Modules_Materia . . . , printed Apr. 10, 2019, 2 pages.
Sigma-Aldrich—“Thermal Transitions of Homopolymers: Glass Transition & Melting Point” webpage, https://www.sigmaaldrich.com/technical-documents/articles/materials-science/polymer-scie . . . , printed Apr. 8, 2019, 3 pages.
Moylan, John—“Considerations for Measuring Glass Transition Temperature,” webpage on Element Materials Technology's website, https://www.element.com/nucleus/2017/08/15/18/45/considerations-for-measuring-glass-transition-temperature, Feb. 19, 2019, 8 pages.
ASTM International—“Standard Test Method for Assignment of the Glass Transition Temperature by Dynamic Mechanical Analysis,” standard issued under Designation E1640, current edition approved Aug. 1, 2013, 6 pages.
Wikipedia—“Contact angle” webpage, https://en.wikipedia.org/wiki/Contact_angle, last edited Dec. 14, 2019, 9 pages.
ASTM International—“Standard Terminology for Additive Manufacturing Technologies,” ASTM Designation F2792-12a, copyright dated Sep. 9, 2013, pp. 1-3.
Merriam-Webster Dictionary—“Droplet,” https://www.merriam-webster.com/dictionary/droplet, accessed Feb. 24, 2020, 8 pages.
Shahrubudin, N., et al.—“An Overview on 3D Printing Technology: Technological, Materials, and Applications,” 2nd International Conference on Sustainable Materials Processing and Manufacturing (SMPM 2019), Procedia Manufacturing, 35 (2019), published by Elsevier B.V., pp. 1286-1296.
Wikipedia—“Drop (liquid),” https://en.wikipedia.org/wiki/Drop_(liquid), last edited Feb. 12, 2020, accessed Feb. 24, 2020, 5 pages.
Wikipedia—“Cross-link” webpage at <https://en.wikipedia.org/wiki/Cross-link>, printed Mar. 8, 2019, 8 pages.
J.-G. Park, et al., Post-CMP Cleaning: Interaction between Particles and Surfaces, International Conference on Planarization/CMP Technology, Oct. 25-27, 2007, VDE Verlag CMBH, Berlin-Offenbach, 6 pp.
Rao, Sunil M., The Effectiveness of Silane and Siloxane Treatments on the Superhydrophobicity and Icephobicity of Concrete Surfaces, RAO, PhD Thesis, 1-118.
A Breakthrough Method for the Effective Conditioning of PVA Brush Used for Post-CMP Process, Lee et al., ECS Journal of Solid State Science and Technology 8, P307-P312 (2019), Published Jun. 5, 2019, 6 pages.
Influence of post-CMP cleaning on Cu interconnects and TDDB reliability, Noguchi et al., IEEE Transactions on Electron Devices 52, 934-941 (2005), Published Apr. 25, 2005, 8 pages.
Arkema, “Liquid Resins for UV Curling”, N3XTDIMENSION. Sartomer's Custom Liquid Resin Systems. 3D-arkema.com.
GPS Safety Summary, “Tripropyleneglycol diacrylate”, (TPGDA—SR 306)—Mar. 11, 2013.
Shyam Dev Maurya et al. “A Review on Aery late-Terminated Urethane Oligomers and Polymers: Synthesis and Applications”, Polymer-Plastics Technology and Engineering. ISSN:0360-2559 (Print) 1525-6111 (Online) Journal homepage: https://www.tandfonline.com/loi/lpte20.
UV/EB Curable Resins. Product Guide—Americas. www.allnex.com.
“Poly(Vinyl Acetate)” https://www.chemicalbook.com/ChemicalProductProperty_EN_GB3700594.htm, ChemicalBook, 2017, 4 pp.
“Polyvinyl acetate solubility,” https://chempedia.info/info/polyvinyl_acetate_solubility/, Big Chemical Encyclopedia, 2019, 4 pp.
American Polymer Standards Corporation Safety Data Sheet, Polyvinyl Acetate, Date of Issue: Mar. 24, 2014, Last Revision Date: Mar. 25, 2019, 5 pp.
Related Publications (1)
Number Date Country
20190039204 A1 Feb 2019 US
Provisional Applications (1)
Number Date Country
62542136 Aug 2017 US