Claims
- 1. A layered material, wherein at least one layer comprises a light-absorbing spin-on glass composition comprising a spin-on glass material and an incorporatable absorbing compound, wherein the absorbing compound comprises a silicon-containing moiety, an oxygen linkage to the silicon-containing moiety and at least one benzene ring.
- 2. The layered material of claim 1, wherein the incorporatable absorbing compound has the formula C14H9(CH2)nOSiRm(OC2H5)3-m or C10H8(CH2)nOSiRm(OC2H5)3-m, wherein n=1-3, m=0-2, and R is selected from the group consisting of hydrogen, methyl, ethyl, and propyl.
- 3. The layered material of claim 2, wherein the incorporatable absorbing compound is 9-anthracene methoxy-methyldiethoxysilane.
- 4. The layered material of claim 2, wherein the spin-on glass material is a siloxane polymer.
- 5. The layered material of claim 4, wherein the siloxane polymer is a polymer selected from the group consisting of methysiloxane, methylsilsesquioxane, phenylsiloxane, phenylsilsesquioxane, methylphenylsiloxane, methylphenylsilsesquioxane, and silicate polymers.
- 6. The layered material of claim 4, wherein the siloxane polymer is a polymer selected from the group consisting of hydrogensiloxane, hydrogensilsesquioxane, organohydridosiloxane, and organohydridosilsesquioxane polymers; and copolymers of hydrogensilsesquioxane and an alkoxyhydridosiloxane or hydroxyhydridosiloxane.
- 7. The layered material of claim 6, wherein the siloxane polymer is a polymer of a general formula selected from the group consisting of (H0-1.0SiO1.5-2.0)x, where x is greater than about 8, and (H0-1.0SiO1.5-2.0)n(R′0-1.0SiO1.5-2.0)m, where m is greater than 0, the sum of n and m is from about 8 to about 5000 and R′ is a C1-20 alkyl group or a C6C12 aryl group.
- 8. The layered material of claim 1, wherein the silicon-containing moiety is selected from the group consisting of siliconethyoxy, silicondietheoxy, and silicontriethoxy.
- 9. The layered material of claim 1, wherein at least part of the spin-on glass composition can be selectively removed.
- 10. The layered material of claim 1, wherein the at least one benzene ring comprises two or three fused benzene rings.
- 11. A semiconductor device comprising a light-absorbing spin-on glass composition, wherein the composition comprises a spin-on glass material and an incorporatable absorbing compound, and further wherein the absorbing compound comprises a silicon-containing moiety, an oxygen linkage to the silicon-containing moiety and at least one benzene ring.
- 12. The semiconductor device of claim 11, wherein the incorporatable absorbing compound has the formula C14H9(CH2)nOSiRm(OC2H5)3-m or C10H8(CH2)nOSiRm(OC2H5)3-m, wherein n=1-3, m=0-2, and R is selected from the group consisting of hydrogen, methyl, ethyl, and propyl.
- 13. The semiconductor device of claim 12, wherein the incorporatable absorbing compound is 9-anthracene methoxy-methyldiethoxysilane.
- 14. The semiconductor device of claim 11, wherein the spin-on glass material is a siloxane polymer.
- 15. The semiconductor device of claim 14, wherein the siloxane polymer is a polymer selected from the group consisting of methysiloxane, methylsilsesquioxane, phenylsiloxane, phenylsilsesquioxane, methylphenylsiloxane, methylphenylsilsesquioxane, and silicate polymers.
- 16. The semiconductor device of claim 14, wherein the siloxane polymer is a polymer selected from the group consisting of hydrogensiloxane, hydrogensilsesquioxane, organohydridosiloxane, and organohydridosilsesquioxane polymers; and copolymers of hydrogensilsesquioxane and an alkoxyhydridosiloxane or hydroxyhydridosiloxane.
- 17. The semiconductor device of claim 16, wherein the siloxane polymer is a polymer of a general formula selected from the group consisting of(H0-1.0SiO1.5-2.0)x, where x is greater than about 8, and (H0-1.0SiO1.5-2.0)n(R′0-1.0SiO1.5-2.0)m, where m is greater than 0, the sum of n and m is from about 8 to about 5000 and R′ is a C1-20 alkyl group or a C6-C12 aryl group.
- 18. The semiconductor device of claim 11, wherein the silicon-containing moiety is selected from the group consisting of siliconethyoxy, silicondietheoxy, and silicontriethoxy.
- 19. The semiconductor device of claim 11, wherein at least part of the spin-on glass composition can be selectively removed.
- 20. The semiconductor device of claim 11, wherein the at least one benzene ring comprises two or three fused benzene rings.
Parent Case Info
This application is a divisional of allowed application Ser. No. 09/617,365, filed Jul. 17, 2000 now U.S. Pat. No. 6,368,400.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
6268108 |
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Jul 2001 |
B1 |
Foreign Referenced Citations (1)
Number |
Date |
Country |
2001-92122 |
Apr 2001 |
JP |
Non-Patent Literature Citations (1)
Entry |
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