Active device array substrate and cutting method thereof

Abstract

A structure of the active device array substrate and the cutting method thereof are provided. The leads laid on the surface of the active device array substrate to electrically connect the bond pads and the short rings have high transmittance for the laser light. After the large-scale active device array substrate and the large-scale CF substrate has been glued into a large-scale substrate, the outer rims of the terminal parts of the active device array substrate can be cut off by applying the full-body-cut method using a laser light.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing aspects and many of the accompanying advantages of this invention will become more readily appreciated as the same becomes better understood by reference to the following detailed description, when taken in conjunction with the accompanying drawings, wherein:

FIG. 1 is a schematic diagram of a glued large-scale substrate in the prior art;

FIG. 2 is a schematic diagram of a discrete panel after accomplishing the cutting process of the glued large-scale substrate shown in FIG. 1;

FIG. 3 is a schematic diagram for cutting the outer rims of the terminal parts of the large-scale active device array substrate using the scribe-and-break method in the prior art;

FIG. 4 is a schematic diagram of a large-scale active device array substrate according to one embodiment of the present invention; and

FIG. 5 is a schematic diagram for cutting the outer rims of the terminal parts of a large-scale active device array substrate by applying the full-body-cut method using a laser light according to one embodiment of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENT

FIG. 4 is a schematic diagram of a large-scale active device array substrate according to one embodiment of the present invention. On the surface of the large-scale active device array substrate 404, there are bond pads 406 to electrically connect to the external driving circuits (not shown in the figure) and short rings 408 to prevent the possible static-electricity damage during the manufacturing processes before cutting. The leads 410 are used to electrically connect the bond pads 406 and the short rings 408, and the transmittance of the leads 410 is higher than which of the bond pads 406 and which of the short rings 408 for the laser light.

In one preferred embodiment, the material of the bond pads 406 and the short rings 408 is selected from the group consisting of Al, Cu, Au, Cr, Ta, Ti, Mn, Ni, Mo, Nb, Nd, Ag and a combination thereof.

Because the leads 410 have high transmittance for the laser light, the full-body-cut method using a laser light can be used to cut the outer rims of the terminal parts of the large-scale active device array substrate. As shown in FIG. 5, the large-scale CF substrate 402 is glued on the large-scale active device array substrate 404, and the cutting route 416 passes the leads 410 on the surface of the large-scale active device array substrate 404. Therefore, the laser light 414 emitted from the laser 412 penetrates through the large-scale CF substrate 402, the leads 410 and the large-scale active device array substrate 404. After accomplishing the cutting process for the outer rims of the terminal parts, the large-scale CF substrate 402 and the large-scale active device array substrate 404 will be cut off along the cutting route 416.

In one preferred embodiment, the laser 412 is a Nd:YAG (Neodymium Doped Yttrium Aluminum Garnet) laser with wavelength 1064 nanometer or a green Nd:YAG laser that has been frequency-doubled with wavelength 532 nanometer. The material of the leads 410 is Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO).

Comparing with the scribe-and-break method of the prior art, the full-body-cut method according to the spirit of the present invention needs to irradiate the laser light only once and does not need to turn over the large-scale substrate. Therefore, the cutting process is much simpler and the tack time is substantially reduced, and so as to lower down the production cost. Furthermore, it does not risk the damage caused by turning-over the glass substrate, so it can effectively elevate the cutting yield and quality.

Consequently, one feature of the present invention is that the leads used to electrically connect the bond pads and the short rings on the surface of the large-scale active device array substrate have high transmittance for the laser light, thereby the outer rims of the terminal parts of the large-scale active device array substrate can be cut off by applying the full-body-cut method using a laser light for the glued large-scale CF substrate and large-scale active device array substrate according to the present invention.

The foregoing descriptions of specific embodiments of the present invention have been presented for purposes of illustrations and description. They are not intended to be exclusive or to limit the invention to the precise forms disclosed, and obviously many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and its practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to particular use contemplated. It is intended that the scope of the invention be defined by the Claims appended hereto and their equivalents.

Claims

1. An active device array substrate, comprising: a plurality of bond pads set on a surface of said active device array substrate;a plurality of short rings set on said surface of said active device array substrate and distributed on the neighborhood of said bond pads; anda plurality of leads set on said surface of said active device array substrate to electrically connect said bond pads and said short rings.

2. The active device array substrate according to claim 1, wherein the material of said bond pads and said short rings is selected from the group consisting of Al, Cu, Au, Cr, Ta, Ti, Mn, Ni, Mo, Nb, Nd, Ag and a combination thereof.

3. The active device array substrate according to claim 1, wherein the material of said leads is Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO).

4. A cutting method for a substrate, comprising: providing an active device array substrate, which comprising: a plurality of bond pads set on a surface of said active device array substrate;a plurality of short rings set on said surface of said active device array substrate and distributed on the neighborhood of said bond pads; anda plurality of leads set on said surface of said active device array substrate to electrically connect said bond pads and said short rings;gluing a color filter substrate on said active device array substrate; andirradiating a laser light to penetrate said leads along a cutting route to cut off said color filter substrate and said active device array substrate.

5. The cutting method according to claim 4, wherein the material of said bond pads and said short rings is selected from the group consisting of Al, Cu, Au, Cr, Ta, Ti, Mn, Ni, Mo, Nb, Nd, Ag and a combination thereof.

6. The cutting method according to claim 4, wherein the material of said leads is Indium Tin Oxide (ITO) or Indium Zinc Oxide (IZO).

7. The cutting method according to claim 4, wherein said laser light is emitted from a green Nd:YAG (Neodymium Doped Yttrium Aluminum Garnet) laser with wavelength 532 nanometer.

8. The cutting method according to claim 4, wherein said laser light is emitted from a Nd:YAG (Neodymium Doped Yttrium Aluminum Garnet) laser with wavelength 1064 nanometer.

9. The cutting method according to claim 4, wherein the transmittance of said leads is higher than which of said bond pads and which of said short rings for said laser light.