Patent Application
20190244942
The present invention relates to a large-area display and a manufacturing method thereof. More particularly, it relates to a LED display capable of active matrix driving, and a manufacturing method thereof.
In recent years, a flat panel type display represented by a liquid crystal display has found widespread use, and has penetrated into various fields. The technological progress such as higher resolution or enlargement has also been intensified according to uses, resulting in advancements of the technological innovation in function in terms of flexibilization of a display. The liquid crystal method has become the current mainstream as the display method. Displays adopting organic EL also have been increasing in share mainly for small and medium size displays. Further, displays using LEDs also tend to increase as large-size displays mainly for outdoor uses.
As a new field of a flat panel display, the digital signage market using a display as an advertising medium substituting for paper at transportation facilities, retail stores, or the like has been expected to grow. Currently, advertisement or information spreading in trains, or POP advertising usage at retail stores by a small-size display has been the mainstream, but the latent need for digital signage is high for a large-size display. A study has been conducted on promotion of the consumption behavior by sending out video advertisements or sales promotional information according to the locations or the consumers' behavior situations, and further, event/service guides, or the like using a large-size display at large-scale commercial facilities, at venues, or in downtown. The high effectiveness of advertisement by a large-size display has also been observed by demonstration experiments or the like.
However, regardless of the high expectation of the market, the trend toward a larger-size display in digital signage has been progressing slowly. The reasons for this reside in that the actual display technology has cost and functional problems, and in that no large-size display technology present can find widespread use. As for the cost, it becomes an important element to suppress the installation cost due to enlargement in addition to the cost of the display main body. Further, most of the places in which large-size displays are set are inside and outside the existing structures. This requires a display technology capable of minimizing the amount of work on the existing structures, and of effectively using the space. In other words, there is a demand for a technology of a large-size display which is lightweight, bendable, and can be manufactured into an arbitrary shape at a low cost.
However, with the liquid crystal display technology which is the mainstream of the existing flat panel display, a display is manufactured on a large glass substrate. From this nature, the manufacturing cost rapidly increases with a trend toward a larger size. Furthermore, the manufacturable size has an upper limit. Signage or the like can be enlarged by combining a plurality of about 40 to 50 inch liquid crystal displays. However, this case has not yet found widespread use because of the increased weight of the whole display, poor installability to the outside or the like, or other reasons.
Further, the organic EL technology is the most suitable for forming a lightweight and flexible display. A bendable display has already found widespread use, but still has many problems in mass production technology for enlargement. Further, use for signage requires a further improvement of characteristics for implementing the required luminance/life characteristic.
On the other hand, a display using LED is enlarged by a method of combining display units each including pixels integrated in a proper size, and hence does not have a size limit in principle. For this reason, a LED display is adopted for an ultra large-size display for use in the outside or the like. However, with the actual technology, it is not possible to form a display of an active matrix system capable of efficiently controlling the pixels. For this reason, it is necessary to perform complicated wiring on the substrate side on which LED elements are mounted, and to control the image of the display units by a complicated control circuit device. Accordingly, it is difficult to control the cost and the weight of the display, resulting in a hindrance to widespread use.
In view of such circumstances, there is a need to provide a large-size, flexible and lightweight active matrix LED display capable of being easily set at various places at a low cost by reducing a large number of lead-out wires for driving LED elements, that enables the display unit to enlarge.
An active matrix LED display of the present invention is formed on a substrate material having flexibility, and has a pixel forming unit having at least one pixel driving circuit and at least one inorganic LED element electrically connected with the pixel driving circuit. The pixel driving circuit is formed of at least one or more thin film transistors. The thin film transistors are organic thin film transistors. The inorganic LED element is mounted as a component on a substrate including the pixel driving circuit.
The active matrix LED display of the present invention is enlarged by arranging a plurality of substrates in the column direction and the row direction. The plurality of substrates arranged in the column direction and the row direction each have an independent driving circuit. Alternatively, the plurality of substrates arranged in the column direction and the row direction are electrically connected with one another, and all the substrates have a common driving circuit.
The substrate including the pixel driving circuit for mounting the inorganic LED element of the active matrix LED display of the present invention has an inter-substrate connecting terminal at the substrate end, further has at least one row selection line, at least one column selection line, at least one power supply line, and at least one ground line on the substrate, and has at least one inorganic LED element mounting terminal connected with the power supply line or the ground line at one side thereof for every unit forming a pixel of the display.
The active matrix LED display of the present invention includes a combination of three members of a pixel driving circuit substrate including the pixel driving circuit formed thereon, an inorganic LED element, and a third substrate having a pattern for mounting them thereon. The pixel driving circuit substrate and the third substrate have flexibility.
The pixel driving circuit substrate of the active matrix LED display of the present invention has at least four terminals of a row selection line connecting terminal, a column selection line connecting terminal, a power supply line connecting terminal, and an inorganic LED connecting terminal.
The third substrate for mounting the pixel driving circuit substrate and the inorganic LED element thereon of the active matrix LED display of the present invention has an inter-substrate connecting terminal at the substrate end, further has at least one row selection line, at least one column selection line, at least one power supply line, and at least one ground line on the substrate, and has at least one row selection line connecting terminal, at least one column selection line connecting terminal, at least one power supply line or ground line connecting terminal, and at least one inorganic LED element mounting terminal connected with the power supply line or the ground line at one side thereof for every unit forming a pixel of the display.
The active matrix LED display of the present invention includes a substrate having a pixel driving circuit for mounting inorganic LED elements thereon, and a third substrate having a pixel driving circuit substrate including a pixel driving circuit formed thereon, inorganic LED elements, and a pattern for mounting them, and has a junction mechanism for bonding or electrically joining the substrates at the substrate ends.
In the active matrix LED display of the present invention, an inorganic LED element is bonded as a component on a substrate including a pixel driving circuit provided thereon in a mounting step.
The active matrix LED display of the present invention includes a combination of three members of a pixel driving circuit substrate having flexibility, including a pixel driving circuit, an inorganic LED element, and a third substrate having flexibility, including a pattern for mounting them. The pixel driving circuit substrate and the inorganic LED element are bonded onto the third substrate in a mounting step.
For arranging a plurality of active matrix LED displays of the present invention in the column direction and in the row direction for enlargement, adjacent active LED displays are bonded using a member having conductivity at least partially, or a junction mechanism.
In accordance with the above embodiments of the present invention, the wires set up on the entire display area surface of a display such as the row selection line, the column selection line, the power supply line, and the ground line required for active matrix display, display elements, and the pixel driving circuit can be formed by the most economically efficient processing methods and densities for themselves, respectively. For this reason, it becomes possible to restrict the enlargement of the manufacturing device in accordance with the enlargement of the display.
Specifically, as distinct from an organic LED (organic EL or OLED) element, for an inorganic LED element, the member formed by the existing solid semiconductor process, and subjected to a high-temperature heat treatment can be exclusively used for the inorganic LED element. For this reason, when this is mounted on a base material as a component, there is no process restriction. Accordingly, a flexible substrate of low-priced polyethylene terephthalate (PET) or the like can be used as a display substrate. As a result, it becomes possible to form various wires or insulation films set up on the entire display area surface on the display substrate by a low-priced roll to roll technology, printing technology, or the like. Further, it becomes possible to form pixel driving circuits at a high density on a flexible substrate with the most economically efficient size for the organic TFT process. This can minimize increases in the manufacturing costs along with the enlargement of the whole display. In addition, it is possible to implement a lightweight and flexible large-size active matrix LED display.
Below, embodiments of the present invention will be described in detail by reference to the accompanying drawings.
In the present embodiment, a description will be given to an example in which a display with a size of 2.88 m×1.62 m (pixel size 3 mm×3 mm) in QHD standard is formed as for digital signage by a technology of manufacturing an active matrix type inorganic LED display including a pixel driving circuit using an organic TFT as each light emitting element provided therein with an inorganic LED element of each color of RGB as a light emitting element.
In the present embodiment, all the conductor lines necessary for active matrix operation are formed before mounting the pixel driving circuit substrate and LEDs. However, it is acceptable as the application scope of the present invention that the order of some formation steps thereof varies with respect to the mounting step of the pixel driving circuit substrate or the LEDs.
In the present embodiment, as the pixel driving circuit, the circuit including a selection TFT and a driving TFT, and a holding capacitive element shown in
The pixel driving circuit can be formed by a high performance organic TFT circuit process of NPL 1, or the like.
Although not explicitly shown in
Then, a description will be given to Second Embodiment for executing the present invention.
In accordance with the present embodiment, as shown in First Embodiment for executing the present invention, on a first substrate, a pixel driving circuit including an organic semiconductor thin film is formed; an inorganic LED element is formed on a second substrate by an inorganic semiconductor process; wires and terminal pattern are formed on a third substrate by various printing methods, a photolithography method, or the like; and the first substrate and the second substrate are bonded together, and mounted onto a prescribed part on the third substrate; as a result, an active matrix LED display is manufactured. The difference from the First Embodiment resides in that mounting is achieved by face up in contrast to face down.
Then, Second Embodiment for executing the present invention will be described in detail.
First, the pixel driving circuit substrate 300 (
The pixel driving circuit substrate 300 shown in the
The first substrate is configured such that the resin-made substrate 300 having flexibility is formed on a handling provisional fixing substrate 301 during processing. At this step, as the handling provisional fixing substrate, the substrate has no particular restriction so long as the substrate is a rigid substrate having good dimensional stability represented by non-alkali glass, quartz glass, Si substrate, and the like.
Further, examples of the resin-made substrate having flexibility may include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC),polyimide (PI), polyether sulfone (PES), polyether imide (PEI), polyphenylene sulfide (PPS), fully aromatic polyamide (another name: aramid), polyphenylene ether (PPE), polyarylate (PAR), polybutylene terephthalate (PBT), polyoxymethylene (POM, another name: polyacetal), polyether ether ketone (PEEK), liquid crystal polymer (LCP) (e.g., molten liquid crystalline fully aromatic polyesters (basic skeleton: parahydroxybenzoic acid, biphenol, and phthalic acid), parylene, and a metal foil substrate.
Further, the film thickness of the resin-made substrate can be freely set at 1 μm to 500 μm according to the purpose, and is more preferably 1 μm to 150 μm, and most preferably 1 μm to 50 μm.
Then, a conductive thin film 310 is formed on the resin substrate. As the method for forming the conductive thin film 310, for example, mention may be made of the following method: the conductive thin film 310 is deposited on the resin-made substrate 300 by a PVD method represented by a sputtering method, and a vacuum deposition method, or by a coating method using an ink including a conductive film material; then, patterning is carried out into a prescribed shape by a photolithography method for formation.
As the materials for forming the conductive thin film 310, for example, mention may be made of a metal such as Au, Ag, Cu, Mo, W, Ti, Al, Pd, Pt, or Ta, alloys of the metals, and compounds of the metals. As the material for forming a conductive film, a material having high conductivity is preferable.
Alternatively, as another method for forming the conductive thin film 310, mention may be made of the following method: for example, by a form-based printing method or a formless printing method, the conductive thin film 310 patterned into a prescribed shape is formed directly on the resin-made substrate 510. By directly forming the conductive thin film 310 patterned into a prescribed shape, it is possible to simplify the step of forming the conductive thin film 310.
When the conductive thin film 310 patterned into a prescribed shape is directly formed by a form-based printing method or a formless printing method, an ink including various conductive film materials can be used. The ink including a conductive film material is preferably an ink including a material with a high conductivity. Examples thereof may include an ink including a conductive polymer compound such as PEDOT/PSS, a fine particle dispersed ink obtained by dispersing nanoparticle fine particles of an inorganic material, and a metal compound ink of copper salt, silver salt, or the like. Examples of the fine particles included in the fine particle dispersed ink may include nano-Au, nano-Ag, nano-Cu, nano-Pd, nano-Pt, nano-Ni, nano-ITO, nano-silver oxide, and nano-copper oxide. The fine particle dispersed ink including nano-silver oxide and nano-copper oxide may include a reducing agent.
Alternatively, the conductive thin film 310 may be formed by a plating method. As the methods for forming the conductive thin film 310 by a plating method, for example, mention may be made of the following method: by a photolithography method, a form-based printing method, or a formless printing method, a plating primer layer previously patterned into a prescribed shape is formed on the resin-made substrate 300, and the conductive thin film 310 is formed at a prescribed position by an electroless plating method, or a combination of an electroless plating method and an electrolytic plating method.
The film thickness of the conductive thin film 310 has no particular restriction, and is preferably 20 nm to 1 μm, and more preferably 20 nm to 300 nm. When the conductive thin film 310 is formed using a fine particle dispersed ink including nanoparticle fine particles of an inorganic material dispersed therein, the film thickness of the conductive thin film 310 is preferably 100 nm to 300 nm, and more preferably 150 nm to 250 nm. This is due to the following reason: the remains of the dispersant component or the like included in the fine particle dispersed ink or the particle growth of the nanoparticle fine particles in the baking treatment after deposition of the conductive thin film 310 results in ununiformity of the nanoparticle fine particles included in the conductive thin film 310; as a result, the conductivity may be inhibited; accordingly, with a film thickness of 100 nm or less, the conductivity may be reduced.
On the other hand, when the conductive thin film 310 is formed using silver salt or the like, the film thickness is preferably 20 nm to 100 nm, and more preferably 20 nm to 60 nm. This is due to the following reason: with silver salt or the like, a denser film is formed than with growth of nanoparticle fine particles, so that conductivity is expressed even with a smaller film thickness. The film can be made still thinner, resulting in a lower step difference of the gate electrode, which can also contribute to the improvement of the reliability of the insulation film thereon.
Then, a gate insulation film 311 is formed on the resin-made substrate 300 and the conductive thin film 310. The gate insulation film 311 is preferably an organic insulation film containing a ferroelectric having a high relative dielectric constant or a polymer compound. As the ferroelectric having a high relative dielectric constant, mention may be made of an inorganic metal compound represented by alumina (AlxOy), or hafnium oxide (HfxOy). Examples of the polymer compound may include PS resin, PVP resin, PMMA resin, fluorine-containing resin, PI (polyimide) resin, PC (polycarbonate) resin, PVA (polyvinyl alcohol) resin, and parylene resin, and copolymers containing a plurality of repeating units contained in the resins. Out of these, the polymer compound is preferably a crosslinkable polymer compound because it is excellent in process resistance represented by solvent resistance, and stability.
The film thickness of the gate insulation film 311 has no particular restriction, and is preferably 1 nm to 1 μm, more preferably 20 nm to 100 nm, and further preferably 30 nm to 80 nm.
For the more preferable structure forming the gate insulation film 311, a lamination film of ferroelectric and an organic insulation film is more preferable, and the structures represented by alumina/PS resin, alumina/PVP resin, alumina/PMMA resin, alumina/fluorine-containing resin, alumina/polyimide resin, alumina/PVA resin, alumina/parylene resin, and the like are conceivable. The film thicknesses of respective structures are preferably 10 nm to 500 nm for the ferroelectric, and 10 nm to 500 nm for the organic insulation film, and more preferably 10 nm to 50 nm for the ferroelectric, and 10 nm to 100 nm for the organic insulation film, and further preferably 10 nm to 40 nm for the ferroelectric, and 10 nm to 40 nm for the organic insulation film.
Then, an organic semiconductor thin film 312 is formed on the gate insulation film 311. As the method for forming the organic semiconductor thin film 312, mention may be made of, for example, the following method: a material for forming the organic semiconductor thin film 312 is selectively deposited only in a prescribed region in which the organic semiconductor thin film 312 should be formed.
Specifically, via a mask represented by a metal mask or the like, a material for forming the organic semiconductor thin film 312 is deposited only in a prescribed region by a PVD method represented by a vacuum deposition method, thereby to form the organic semiconductor thin film 312.
Further, the following is also acceptable: a resin film having an opening is formed only in a prescribed region in which the organic semiconductor thin film 312 should be formed; subsequently, the organic semiconductor thin film 312 is formed entirely thereon by a vacuum deposition method. In this case, the opening of the resin film is preferably formed in an inverted tapered shape in which the opening area decreases with away from the substrate 1. This is due to the following reason: by using a resin film having an opening formed in an inverted tapered shape, the organic semiconductor thin film 312 formed in the opening and the organic semiconductor thin film 312 formed on the resin film are cut; accordingly, the resin film preferably functions as a separator.
Alternatively, as another method for forming the organic semiconductor thin film 312, for example, mention may be made of the following method: the organic semiconductor thin film 312 is deposited on the gate insulation film 311 by a PVD method represented by a vacuum deposition method, or a coating method using an ink including an organic semiconductor material; then, patterning is carried out into a prescribed shape by a photolithography method for formation.
Further, as a still other method for forming the organic semiconductor thin film 312, for example, mention may be made of the following method: by a form-based printing method or a formless printing method, the organic semiconductor thin film 312 patterned in a prescribed shape is directly formed on the gate insulation film 311. Direct formation of the organic semiconductor thin film 312 patterned in a prescribed shape can simplify the step of forming the organic semiconductor thin film 312.
However, in the present invention, a high current ability is required for driving inorganic LED elements. For this reason, out of these, most preferable is the following method: an organic single crystal film oriented in a uniaxial direction is deposited on the entire surface of the gate insulation film 311 by a coating method using a formless printing method, thereby to obtain the organic semiconductor thin film 312 patterned in a prescribed shape by a photolithography method.
When an organic single crystal film oriented in a uniaxial direction is deposited on the entire top surface of the gate insulation film 311 by a coating method using a formless printing method, and then, the organic semiconductor thin film 312 patterned in a prescribed shape by a photolithography method is formed, an ink including various organic semiconductor materials can be used, and an ink including a low molecular weight organic semiconductor material is preferably used. Further, after depositing the organic semiconductor thin film 312, a burning treatment may be carried out in order to control the morphology of the organic semiconductor thin film 312, or in order to volatilize the solvent included in the organic semiconductor thin film 312. The film thickness of the organic semiconductor thin film 312 has no particular restriction, and is preferably 1 nm to 1000 nm, more preferably 1 nm to 100 nm, and further preferably 1 nm to 50 nm. The best film is more preferably a crystal film with 3 to 5 molecular layers or less not depending upon the film thickness.
As the organic semiconductor materials, examples of a low molecular weight compound depositable by vapor deposition may include Pentacene, and copper phthalocyanine; and examples of a compound depositable by coating may include low molecular weight compounds or oligomer represented by pentacene precursors represented by 6,13-bis(triisopropylsilylethynyl)pentacene(Tips-Pentacene), 13,6-N-sulfinylacetamidopentacene (NSFAAP), 6,13-Dihydro-6,13-methanopentacene-15-one (DMP), Pentacene-N-sulfinyl-n-butylcarbamate adduct, Pentacene-N-sulfinyl-tert-butylcarbamate), and the like, and [1]Benzothieno[3,2-b]benzothiophene (BTBT), 3,11-didecyldinaphto[2,3-d:2′,3′-d′]benzo[1,2-b:4,5-b′]dithiop bene (C10-DNBDT), those having a benzobisthiadiazole skeleton, porphyrine, benzoporphyrine, oligothiophene having an alkyl group or the like as a soluble group, and the like, or a polymer compound represented by polythiophene, fluorene copolymer, IDT-BT (indacenodithiophene benzothiadiazole) having a D-A structure, CDT-BT (Cyclopentadithiophene benzothiadiazole), and the like.
Then, a patterned conductive thin film 315 is formed on the gate insulation film 311 and the organic semiconductor thin film 312. The conductive thin film 315 forms the source electrode and the drain electrode of an organic thin film transistor.
The conductive thin film 315 can be formed by the same method as that for the conductive thin film 310. Incidentally, the formation of the conductive thin film 315 may be achieved by the same method as that for the formation of the conductive thin film 310, or may be formed by a different method.
The film thickness of the conductive thin film 315 (i.e., the film thickness of the source electrode and the drain electrode of the organic thin film transistor) has no particular restriction, and is preferably 20 nm to 1 μm, more preferably 20 nm to 600 nm, and further preferably 20 nm to 500 nm.
Then, a protective film 316 is formed on the gate insulation film 311, the organic semiconductor thin film 312, and the conductive thin film 315. As the method for forming the protective film 316, for example, mention may be made of the following method; the protective layer 316 is deposited by a PVD method represented by a vacuum deposition method, a CVD method represented by an ALD (atomic layer deposition) method, or a coating method using an ink including a protective layer material; then, patterning is carried out into a prescribed shape by a photolithography method. Alternatively, as another method for forming the protective layer 316, for example, mention may be made of a method of directly forming the protective film 316 patterned in a prescribed shape by a form-based printing method or a formless printing method. The direct formation of the protective layer 316 patterned in a prescribed shape can simplify the step of forming the protective layer 316.
Out of these, preferable is the method for directly forming the protective layer 316 patterned in a prescribed shape by a form-based printing method or a formless printing method.
When the protective layer 316 patterned in a prescribed shape is directly formed by a form-based printing method or a formless printing method, an ink including various protective layer materials can be used. Examples of the ink including the protective layer materials may include a dispersed ink including inorganic materials, an ink including SOG (spin on glass) materials, low molecular weight protective layer materials, and an ink including polymer protective layer materials. The ink including polymer protective layer materials is preferable.
Examples of the material for forming the protective layer 316 may include the same materials as those exemplified for the gate insulation film 311 other than the materials included in the foregoing inks, and the SOG materials.
The film thickness of the protective film 316 has no particular restriction, but is preferably 50 nm to 5 μm, and more preferably 500 nm to 3.0 μm.
Finally, an upper electrode 318 is formed on the protective layer 316 to complete a first substrate including the pixel driving circuit formed thereon. The method for forming the upper electrode 318 has no particular restriction, but may include a photolithography method, a form-based printing method, and a formless printing method. Out of these, a method using a screen (stencil printing plate) printing method which is one of the form-based printing methods is preferable.
Then, for an inorganic LED element 400 of the second substrate, a light emitting diode commercially available, or directly bought from a manufacturer as a component may only be mounted on the third substrate using a chip mounter. The most preferable inorganic LED element is a LED element of a bare chip. The dimensions thereof are preferably dimensions of 0.25×0.27 mm to 0.4×0.2 mm (so-called, 0201 to 0402). Alternatively, an inorganic LED element with dimensions of 1.6×0.8 mm (1608) for monocolor light emission, or 1.6×1.5 mm (1615) per chip including three colors merged therein, for full-color one is also accebtable. The most preferable form is a full-color type bare chip inorganic LED element.
Then, a third substrate (
First, an electrode pattern 510 is formed on the third substrate. As the method for pattern forming the electrode pattern 510, a screen printing method is the most preferable, but a photolithography method is also acceptable. Then, the process appropriately goes through a burning step and the like to obtain the electrode pattern 510.
Then, an insulation film pattern 520 having openings at the terminal part of the substrate end, and the positions at which the pixel driving circuit substrate 300, and the inorganic LED element 400 are mounted is pattern formed thereon. As the method for pattern forming the insulation film pattern 520, a screen printing method is the most preferable, but a photolithography method after slit or spin coating is also acceptable. This process also appropriately goes through a burning step and the like to obtain the insulation film pattern 520. The process goes through this step, thereby to complete the third substrate.
Then, on the third substrate, the pixel driving circuit substrate 300 and the inorganic LED element 400 are mounted on the third substrate (
With the best mounting method, an adhesive 600 is previously coated at the mounting place of the pixel driving circuit substrate 300; thereon, the pixel driving circuit substrate 300 is mounted and fixed by face up; then, the Ag paste 610 is printed by screen printing so as to extend across the terminal part of the pixel driving circuit substrate 300 and the connecting terminal provided on the third substrate for establishing connection with the pixel driving circuit substrate 300. Further, in the same step, the Ag paste 610 is also pattern formed at the connecting terminal portion for mounting the inorganic LED element 400. Then, the inorganic LED element 400 is mounted with the light emitting surface oriented in the face up direction. Finally, the Ag paste 610 is dried at 100° C. for 30 minutes. As a result, mounting of the components onto the third substrate is completed.
Basically, the dimensions of the third substrate may be set according to the work size of the print circuit substrate. Then it is not necessary to adopt special specifications for introducing a manufacturing device such as a screen printing machine. For example, for the copper-clad lamination sheet, the maximum size is determined as 1000 (1020)×1000 (1020) mm or 1000 (1020)×1200 (1220) mm. This can be divided into four parts each with a work size of 500 (510)×500 (510) mm, or a smaller work size for use.
Then, a description will be given to the case where the third substrates are bonded together to manufacture a large-size display. A plurality of 500×500 mm substrates are bonded together in the column direction and the row direction. As a result, a large-size active matrix LED display can be implemented. Preferably, the junction surface 700 for connecting the third substrates at this step is bonded using an adhesive 710 having conductivity at least for the electrode terminal part; and other substrate portions are connected by a resin-made adhesive 720 (
The present embodiment has shown the following: a pixel driving circuit using a high performance organic TFT capable of driving LED and the inorganic LED element are manufactured independently on different substrates from a display substrate; the resulting ones are mounted on the display substrate; as a result, it is possible to implement an active matrix system LED display. However, the following is also acceptable: a pixel driving circuit by an organic TFT is formed directly on a display substrate, and an inorganic LED element is mounted thereon. In accordance with the present invention, the circuits and wires necessary for controlling inorganic LED pixels are minimized, which can reduce the weight of the whole display. This can achieve the reduction of the installation cost and the ultraflexibility of a large-size LED display substrate.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2016-205464 | Oct 2016 | JP | national |
This application is a bypass continuation of International Application No. PCT/JP2017/038096, filed Oct. 17, 2017, which claims priority of Japanese Patent Application No. 2016-205464, filed in Japan on Oct. 19, 2016, the entire contents of which are incorporated herein by reference.
| Number | Date | Country | |
|---|---|---|---|
| Parent | PCT/JP2017/038096 | Oct 2017 | US |
| Child | 16387964 | US |
