Claims
- 1. A method for bonding conductive materials to themselves or to non-conductive materials, said method comprising the steps of:
- obtaining a bonding alloy comprising
- from about 10 to 90 atomic percent indium, and an additive comprised of from a measurable amount to about 40 atomic percent mercury, from a measurable amount to about 40 atomic percent gallium, and from 0 to about 55 atomic percent bismuth;
- preparing a surface of each material to be bonded as a clean surface;
- heating said bonding alloy such that at least a non-oxidized, semi-liquid state is formed;
- introducing said heated bonding alloy to each non-oxidized surface such that each of said surfaces becomes substantially wetted by said heated alloy;
- applying additional heated bonding alloy as needed to each of said wetted surfaces concurrently to form a continuous alloy juncture between said materials; and
- allowing said alloy juncture to cool and solidify such that a bonded interface between said surfaces is provided by said solidified alloy.
- 2. A method for bonding non-conductive materials to themselves or to conductive materials, said method comprising the steps of:
- obtaining a bonding alloy comprising
- from about 10 to 90 atomic percent indium, and an additive comprised of from a measurable amount to about 40 atomic percent mercury, from a measurable amount to about 40 atomic percent gallium, and from 0 to about 55 atomic percent bismuth, from 0 to about 30 atomic percent cadmium, from 0 to about 15 atomic percent tin, and from 0 to about 10 atomic percent lead;
- preparing a surface of each material to be bonded as a clean surface;
- heating said bonding alloys such that at least a non-oxidized, semi-liquid state is formed;
- introducing said heated bonding alloy to each non-oxidized surface such that each of said surfaces becomes substantially wetted by said heated alloy;
- applying additional heated bonding alloy as needed to each of said wetted surfaces concurrently to form a continuous alloy juncture between said materials; and
- allowing said alloy juncture to cool and solidify such that a bonded interface between said surfaces is provided by said solidified alloy.
- 3. A method for bonding a material to itself or to other materials, said method comprising the steps of:
- obtaining a bonding alloy comprised essentially of from about 10 to 90 atomic percent indium, and from a measurable amount to about 40 atomic percent mercury;
- preparing a surface of each material to be bonded as a clean surface;
- heating said bonding alloys such that at least a non-oxidized, semi-liquid state is formed;
- introducing said heated bonding alloy to each non-oxidized surface such that each of said surfaces becomes substantially wetted by said heated alloy;
- applying additional heated bonding alloy as needed to each of said wetted surfaces concurrently to form a continuous alloy juncture between said materials; and
- allowing said alloy juncture to cool and solidify such that a bonded interface between said surfaces is provided by said solidified alloy.
- 4. A method for bonding a material to itself or to other materials, said method comprising the steps of:
- obtaining a bonding alloy comprised essentially of from about 10 to 90 atomic percent indium, and from a measurable amount to about 40 atomic percent mercury;
- preparing a surface of each material to be bonded as a clean surface;
- heating said bonding alloys such that at least a non-oxidized, semi-liquid state is formed;
- introducing said heated bonding alloy to each non-oxidized surface such that each of said surfaces becomes substantially wetted by said heated alloy;
- applying additional heated bonding alloy as needed to each of said wetted surfaces concurrently to form a continuous alloy juncture between said materials; and
- allowing said alloy juncture to cool and solidify such that a bonded interface between said surfaces is provided by said solidified alloy.
CROSS-REFERENCE
The present application is a Continuation-In-Part of U.S. patent application Ser. No. 561,386 filed Aug. 1, 1990, now pending, which is a Continuation of U.S. patent application Ser. No. 374,411 filed Jun. 30, 1989, now U.S. Pat. No. 4,966,142, issued Oct. 30, 1990.
US Referenced Citations (8)
Foreign Referenced Citations (1)
Number |
Date |
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830412 |
Mar 1960 |
GBX |
Continuations (1)
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Number |
Date |
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Parent |
374411 |
Jun 1989 |
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Continuation in Parts (1)
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Number |
Date |
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561386 |
Aug 1990 |
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