Claims
- 1. A precursor composition for MOCVD of a metal-containing film on a substrate, wherein the precursor composition includes a solvent medium comprising one or more alkanes having dissolved therein one or more compatible metal organic compound(s) wherein at least one metalorganic compound is a bismuth Lewis base adduct of the formula:Bi(β-diketonate)3(L)m wherein L is a Lewis base ligand selected from the group consisting of: amines, ethers, glymes, aryls and aryl amines and m is a value from ½ to 5.
- 2. The precursor composition according to claim 1, wherein the β-diketonate ligand is selected from the group consisting of:2,2,6,6-tetramethyl-3,5-heptanedionato; 1,1,1-trifluoro-2,4-pentanedionato; 1,1,1,5,5,5-hexafluoro-2,4-pentanedionato; 6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5-octanedionato; 2,2,7-trimethyl-3,5-octanedionato; 1,1,1,5,5,6,6,7,7,7-decafluoro-2,4-heptanedionato; and 1,1,1-trifluoro-6-methyl-2,4-heptanedionato.
- 3. The precursor composition according to claim 1, wherein the Lewis base ligand is selected from the group consisting of: NH3, primary amines, secondary amines, tertiary amines and polyamines.
- 4. The precursor composition according to claim 1, wherein the Lewis base ligand is selected from the group consisting of: monoglymes, diglymes, triglymes, tetraglymes, aliphatic ethers, polyethers, and cyclic ethers.
- 5. The precursor composition according to claim 1, wherein the Lewis base ligand is tetrahydrofuran.
- 6. The precursor composition according to claim 1, wherein the Lewis base ligand is selected from the group consisting of toluene and pyridine.
- 7. The precursor composition according to claim 1, wherein the Lewis base ligand is selected from the group consisting of: N,N,N′,N′-tetramethylethylenediamine and N,N,N′,N′,N″-pentamethyldiethylenetriamine.
- 8. The precursor composition according to claim 1, wherein the metal organic compound(s) further comprise Sr(β-diketonate)(L)m and Ta(alkoxide)4(β-diketonate).
- 9. The precursor composition according to claim 1, wherein the bismuth Lewis base adduct is Bi(thd)3(pmdeta).
- 10. The precursor composition according to claim 9 wherein the metal organic compound(s) further comprise Sr(thd)2(pmdeta) and Ta(OiPr)4(thd).
- 11. The precursor composition according to claim 10, wherein the solvent medium comprises octane, decane and pmdeta.
- 12. The precursor composition according to claim 10, wherein the solvent medium comprises octane, decane and pmdeta in a 5:4:1 ratio.
- 13. The precursor composition according to claim 1 wherein the bismuth Lewis base adduct is Bi(thd)3(tmeda).
- 14. The precursor composition according to claim 13, wherein the solvent medium comprises octane, decane and tmeda.
- 15. The precursor composition according to claim 13, wherein the solvent medium comprises octane, decane and pmdeta in a 5:4:1 ratio.
- 16. The precursor composition according to claim 1, wherein the solvent medium comprises at least one solvent species selected from the group consisting of C1-C10 alkanes.
- 17. The precursor composition according to claim 1, wherein the solvent medium comprises at least one solvent species selected from the group consisting of pentane, octane, hexane, and decane.
- 18. The precursor composition according to claim 1, wherein the solvent medium comprises octane, decane and pmdeta.
- 19. The precursor composition according to claim 1, wherein the solvent medium comprises octane, decane and pmdeta in a 5:4:1 ratio.
- 20. The precursor composition according to claim 1, wherein the solvent medium comprises octane and pmdeta.
- 21. The precursor composition according to claim 1 wherein the solvent medium comprises octane and pmdeta in a 9:1 ratio.
- 22. The precursor composition according to claim 1, further comprising a second metal organic compound.
- 23. The precursor composition according to claim 22, wherein the second metal organic compound comprises one or more alkoxide ligands.
- 24. The precursor composition according to claim 22 wherein the second metal organic compound comprises at least one of ethoxide groups and isopropoxide groups.
- 25. The precursor composition according to claim 22, wherein the second metal organic compound comprises one or more alkyl and/or aryl groups at their outer molecular.
- 26. The precursor composition according to claim 22, wherein the second metal organic compound comprises one or more functional groups selected from the group consisting of carboxylates, alkoxides, amides, alkyls, and aryls.
CROSS-REFERENCE TO RELATED APPLICATIONS
This is a continuation in part of U.S. patent application Ser. No. 09/185,374 filed Nov. 3, 1998, now U.S. Pat. No. 6,214,105, which is a continuation of application Ser. No. 08/975,372 filed Nov. 20, 1997, now U.S. Pat. No. 5,916,359, which is a continuation in part of U.S. patent application Ser. No. 08/484,654 filed Jun. 7, 1995, now U.S. Pat. No. 6,110,529, which is a continuation in part of U.S. patent application Ser. No. 08/414,504 filed Mar. 31, 1995, now U.S. Pat. No. 5,820,664.
This is also a continuation in part of U.S. patent application Ser. No. 09/224,614 filed Dec. 31, 1998, now U.S. Pat. No. 6,111,124, which is a continuation in part of U.S. patent application Ser. No. 08/960,915 filed Oct. 30, 1997, now U.S. Pat. No. 5,859,274.
US Referenced Citations (10)
Foreign Referenced Citations (2)
Number |
Date |
Country |
258641 |
Sep 1926 |
GB |
530875 |
Jan 1977 |
SU |
Non-Patent Literature Citations (1)
Entry |
G.S. Brady: “Materials Handbook—An Encyclopedia for Purchasing Agents, Engineers, Executives, and Foremen”, Ninth Edition McGraw-Hill Book Co.,Inc., New York, p. 500, 1963. |
Continuations (1)
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Number |
Date |
Country |
Parent |
08/975372 |
Nov 1997 |
US |
Child |
09/224614 |
|
US |
Continuation in Parts (5)
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Number |
Date |
Country |
Parent |
09/185374 |
Nov 1998 |
US |
Child |
09/454954 |
|
US |
Parent |
09/224614 |
Dec 1998 |
US |
Child |
09/185374 |
|
US |
Parent |
08/960915 |
Oct 1997 |
US |
Child |
08/975372 |
|
US |
Parent |
08/484654 |
Jun 1995 |
US |
Child |
08/960915 |
|
US |
Parent |
08/414504 |
Mar 1995 |
US |
Child |
08/484654 |
|
US |