Claims
- 1. A photo sensor comprising:
- a first wiring layer;
- a blocking diode formed on said first wiring layer and primarily consisting of amorphous silicon;
- a photo-shield layer formed on said blocking diode;
- a photo diode formed on said photo-shield layer and primarily consisting of amorphous silicon; and
- a second wiring layer of a transparent conductive material formed on said photo diode.
- 2. A photo sensor as claimed in claim 1, wherein said photo-shield layer is made of a material selected from the group consisting of molybdenum, aluminum, nickel, chromium, platinum and conductive carbon.
- 3. A photo sensor as claimed in claim 1, wherein said photo-shield layer is a photo absorber made of a material selected from the group consisting of amorphous germanium and amorphous silicon germanium.
- 4. A photo sensor comprising:
- a first wiring layer;
- a blocking diode formed on said first wiring layer;
- a photo-shield layer formed on said blocking diode;
- a photo diode formed on said photo-shield layer; and
- a second wiring layer of a transparent conductive material formed on said photo diode.
- 5. A photo sensor as claimed in claim 4, wherein said blocking diodes and said photo diodes are made of amorphous silicon.
- 6. A photo sensor as claimed in claim 5, wherein said photo-shield layer is made of a material selected from the group consisting of molybdenum, aluminum, nickel, chromium, platinum and conductive carbon.
- 7. A photo sensor as claimed in claim 5, wherein said photo-shield layer is a photo absorber made of a material selected from the group consisting of amorphous germanium and amorphous silicon germanium.
Priority Claims (4)
Number |
Date |
Country |
Kind |
59-47836 |
Mar 1984 |
JPX |
|
59-92136 |
May 1984 |
JPX |
|
59-92138 |
May 1984 |
JPX |
|
59-134313 |
Jun 1984 |
JPX |
|
Parent Case Info
This application is a divisional of application Ser. No. 710,679, filed Mar. 12, 1985, now U.S. Pat. No. 4,758,734.
US Referenced Citations (6)
Non-Patent Literature Citations (1)
Entry |
Yamamoto et al., High Speed Contact Type Linear Sensor Array Using a-Si pin Diodes, Extended Absts. of the 15th Conf. on Solid State Devices & Materials, 1983, pp. 205-208. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
710679 |
Mar 1985 |
|