Gildenblat, et al., "Electrical Characteristics of Schottky Diodes Fabricated Using Plasma Assisted Chemical Vapor Deposited Diamond Films", Appl. Phys. Lett. 53 (7), pp. 586-589, Aug. 1988. |
Gildenblat, et al., "The Effect of Surface Treatment on the Electrical Properties of Metal Contacts to Boron-Doped Homoepitaxial Diamond Film", IEEE Electron Device Letters, vol. 11, pp. 100-102, No. 2, Feb. 1990. |
Geis, "Diamond Transistor Performance and Fabrication", Proceedings of the IEEE, vol. 79, No. 5, pp. 669-676, May, 1991. |
Nishimura, et al., "Material and Electrical Characterization of Poly-Crystalline Boron-Doped Diamond Films Grown By Microwave Plasma Chemical Vapor Deposition", J. Appl. Phys. 69 (5), pp. 3142-3149, Mar., 1991. |
Glover, "The C-V Characteristics of Schottky Barriers on Laboratory Grown Semiconducting Diamonds", Solid State Electronics, vol. 16, pp. 973-983, 1973. |
Prins, "Preparation of Ohmic Contacts To Semiconducting Diamond", pp. 1562-1564, Jul. 5, 1989. |
Wolf, et al., "Silicon Processing For The VLSI Era", vol. I, Process Technology, pp. 175-182, Jun., 1987. |
Shimoni, et al., "Electrical Characteristics of Metal Contacts to Boron-Doped Diamond Epitaxial Film", pp. 758-762, Mar., 1989. |