Schottky barrier electrodes

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H01L29/47

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/47Schottky barrier electrodes

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having nickel oxide film on gate electrode
- Patent number 12,243,927
- Issue date Mar 4, 2025
- Sumitomo Electric Device Innovations, Inc.
- Tomohiro Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-GaN high electron mobility transistor (HEMT) with MOS2-based 2D b...
- Patent number 12,243,928
- Issue date Mar 4, 2025
- IMAM MOHAMMAD IBN SAUD ISLAMIC UNIVERSITY
- Ghada A. Khouqeer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistor with improved gate arrangement
- Patent number 12,243,926
- Issue date Mar 4, 2025
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Gökhan Atmaca
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tuning method for active metamaterials using IGZO Schottky diodes
- Patent number 12,237,427
- Issue date Feb 25, 2025
- SHAN DONG UNIVERSITY
- Yifei Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,224,331
- Issue date Feb 11, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko Kawashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power device with partitioned active regions
- Patent number 12,224,343
- Issue date Feb 11, 2025
- Analog Power Conversion LLC
- Amaury Gendron-Hansen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with logic and memory
- Patent number 12,219,769
- Issue date Feb 4, 2025
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming engineered wafers
- Patent number 12,191,192
- Issue date Jan 7, 2025
- Bing Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride-based transistor device
- Patent number 12,166,117
- Issue date Dec 10, 2024
- Infineon Technologies Austria AG
- Luca Sayadi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a gate terminal of a HEMT device, and HEMT...
- Patent number 12,165,871
- Issue date Dec 10, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer structure and semiconductor device
- Patent number 12,159,940
- Issue date Dec 3, 2024
- FLOSFIA INC.
- Mitsuru Okigawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN/two-dimensional AlN heterojunction rectifier on silicon substra...
- Patent number 12,154,990
- Issue date Nov 26, 2024
- South China University of Technology
- Wenliang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,142,677
- Issue date Nov 12, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Yusuke Kanda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode and method for fabricating the same
- Patent number 12,136,676
- Issue date Nov 5, 2024
- POWERCUBE SEMI INC.
- You Seung Rim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor and fabrication method thereof
- Patent number 12,132,103
- Issue date Oct 29, 2024
- Vanguard International Semiconductor Corporation
- Yung-Fong Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D semiconductor device and structure with logic and memory
- Patent number 12,120,880
- Issue date Oct 15, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with multi-level self-aligned gate and source/drain term...
- Patent number 12,119,383
- Issue date Oct 15, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Johnatan A. Kantarovsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with self-aligned body and hybrid source
- Patent number 12,113,106
- Issue date Oct 8, 2024
- Amplexia, LLC
- Brendan Toner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,107,137
- Issue date Oct 1, 2024
- FLOSFIA INC.
- Mitsuru Okigawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode and method of fabrication thereof
- Patent number 12,107,136
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wen-Shun Lo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap structure coupled to source to reduce saturation current in HEM...
- Patent number 12,100,757
- Issue date Sep 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,100,769
- Issue date Sep 24, 2024
- FLOSFIA INC.
- Mitsuru Okigawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor MPS diode with reduced current-crowding effect and ma...
- Patent number 12,094,985
- Issue date Sep 17, 2024
- STMicroelectronics S.r.l.
- Simone Rascuna′
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a plurality of III-V semiconductor layers
- Patent number 12,087,820
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yu-Syuan Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective dual silicide formation
- Patent number 12,087,642
- Issue date Sep 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Wei-Yip Loh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based semiconductor device and method for manufacturing the...
- Patent number 12,074,202
- Issue date Aug 27, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Qingyuan He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,057,512
- Issue date Aug 6, 2024
- Rohm Co., Ltd.
- Masaya Ueno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a junction portion contacting a Schottk...
- Patent number 12,057,479
- Issue date Aug 6, 2024
- Rohm Co., Ltd.
- Yasuhiro Kawakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT and method of fabricating the same
- Patent number 12,046,669
- Issue date Jul 23, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC semiconductor device with insulating film and organic insulatin...
- Patent number 12,046,641
- Issue date Jul 23, 2024
- Rohm Co., Ltd.
- Katsuhisa Nagao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR PACKAGE
- Publication number 20250072020
- Publication date Feb 27, 2025
- Rohm Co., Ltd.
- Akira SAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS...
- Publication number 20250048667
- Publication date Feb 6, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Ujwal Radhakrishna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040160
- Publication date Jan 30, 2025
- NATIONAL SUN YAT-SEN UNIVERSITY
- Jyi-Tsong LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR WITH HELPING GATE
- Publication number 20250022932
- Publication date Jan 16, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chiao-Chun Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250022933
- Publication date Jan 16, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko KAWASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR
- Publication number 20250015174
- Publication date Jan 9, 2025
- Vanguard International Semiconductor Corporation
- Yung-Fong Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240429297
- Publication date Dec 26, 2024
- ROHM CO., LTD.
- Manabu YANAGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FRONT SIDE OHMIC CONTACT FORMATION FOR SIC DEVICE
- Publication number 20240429286
- Publication date Dec 26, 2024
- STMicroelectronics International N.V.
- Simone RASCUNA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE DEVICE WITH SINGLE METALLIZATION PROCESS FOR OHMIC...
- Publication number 20240421192
- Publication date Dec 19, 2024
- Woflspeed, Inc.
- Rahul R. POTERA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240421220
- Publication date Dec 19, 2024
- ROHM CO., LTD.
- Manabu YANAGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
- Publication number 20240413207
- Publication date Dec 12, 2024
- Hitachi Energy Ltd
- Giovanni ALFIERI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240413233
- Publication date Dec 12, 2024
- UNITED MICROELECTRONICS CORP.
- Yi-Chuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240387751
- Publication date Nov 21, 2024
- ROHM CO., LTD.
- Akira SAGAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE DUAL SILICIDE FORMATION
- Publication number 20240387288
- Publication date Nov 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wei-Yip LOH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY DIODE AND METHOD OF FABRICATION THEREOF
- Publication number 20240379808
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Wen-Shun LO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE
- Publication number 20240379880
- Publication date Nov 14, 2024
- Shindengen Electric Manufacturing Co., Ltd.
- Masaki HASHIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC STATIC INDUCTION TRANSISTOR WITH DOUBLE SIDE COOLING AND METHOD...
- Publication number 20240371989
- Publication date Nov 7, 2024
- Analog Power Conversion LLC
- Dumitru G. SDRULLA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field-Effect Transistor Device with Equivalent Source and Drain Reg...
- Publication number 20240371937
- Publication date Nov 7, 2024
- SOOCHOW UNIVERSITY
- Mingxiang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH LOW BARRIER HEIGHT SCHOTTKY CONTACTS
- Publication number 20240355897
- Publication date Oct 24, 2024
- Wolfspeed, Inc.
- Neal Oldham
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Buried Grid Double Junction Barrier Schottky Diode and Method of Ma...
- Publication number 20240355938
- Publication date Oct 24, 2024
- II-VI Delaware, Inc.
- Shuoben Hou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING A JUNCTION PORTION CONTACTING A SCHOTTK...
- Publication number 20240355886
- Publication date Oct 24, 2024
- ROHM CO., LTD.
- Yasuhiro Kawakami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240347646
- Publication date Oct 17, 2024
- Rohm Co., Ltd.
- Masaya UENO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH LOGIC AND MEMORY
- Publication number 20240349504
- Publication date Oct 17, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH LOGIC AND MEMORY
- Publication number 20240334701
- Publication date Oct 3, 2024
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC SEMICONDUCTOR DEVICE WITH INSULATING FILM AND ORGANIC INSULATIN...
- Publication number 20240332367
- Publication date Oct 3, 2024
- ROHM CO., LTD.
- Katsuhisa NAGAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240332370
- Publication date Oct 3, 2024
- ROHM CO., LTD.
- Hirotaka OTAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-CHANNEL HIGH ELECTRON MOBILITY TRANSISTOR WITH DOPED GATE FINS
- Publication number 20240332409
- Publication date Oct 3, 2024
- Infineon Technologies Austria AG
- Clemens Ostermaier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...
- Publication number 20240332411
- Publication date Oct 3, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ming-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR, RADIO FREQUENCY TRANSISTOR, POWE...
- Publication number 20240322029
- Publication date Sep 26, 2024
- Huawei Technologies Co., Ltd
- Bin Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR AND METHOD FOR MANUFACTURING TRANSISTOR
- Publication number 20240321634
- Publication date Sep 26, 2024
- Sumitomo Electric Industries, Ltd.
- Yukihiro TSUJI
- H01 - BASIC ELECTRIC ELEMENTS

Schottky barrier electrodes

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device having nickel oxide film on gate electrode

P-GaN high electron mobility transistor (HEMT) with MOS2-based 2D b...

HEMT transistor with improved gate arrangement

Tuning method for active metamaterials using IGZO Schottky diodes

Semiconductor device

Power device with partitioned active regions

3D semiconductor device and structure with logic and memory

Method of forming engineered wafers

Group III nitride-based transistor device

Method for manufacturing a gate terminal of a HEMT device, and HEMT...

Multilayer structure and semiconductor device

GaN/two-dimensional AlN heterojunction rectifier on silicon substra...

Semiconductor device

Schottky diode and method for fabricating the same

High electron mobility transistor and fabrication method thereof

3D semiconductor device and structure with logic and memory

Transistor with multi-level self-aligned gate and source/drain term...

LDMOS with self-aligned body and hybrid source

Semiconductor device

Schottky diode and method of fabrication thereof

Cap structure coupled to source to reduce saturation current in HEM...

Semiconductor device

Semiconductor MPS diode with reduced current-crowding effect and ma...

Semiconductor device having a plurality of III-V semiconductor layers

Selective dual silicide formation

Nitride-based semiconductor device and method for manufacturing the...

Semiconductor device

Semiconductor device having a junction portion contacting a Schottk...

HEMT and method of fabricating the same

SiC semiconductor device with insulating film and organic insulatin...

Patents Applicationslast 30 patents

SEMICONDUCTOR PACKAGE

SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS...

SEMICONDUCTOR DEVICE

HIGH ELECTRON MOBILITY TRANSISTOR WITH HELPING GATE

SEMICONDUCTOR DEVICE

METHOD OF FABRICATING HIGH ELECTRON MOBILITY TRANSISTOR

SEMICONDUCTOR DEVICE

FRONT SIDE OHMIC CONTACT FORMATION FOR SIC DEVICE

SILICON CARBIDE DEVICE WITH SINGLE METALLIZATION PROCESS FOR OHMIC...

NITRIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD

GALLIUM NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SELECTIVE DUAL SILICIDE FORMATION

SCHOTTKY DIODE AND METHOD OF FABRICATION THEREOF

SCHOTTKY BARRIER DIODE

SIC STATIC INDUCTION TRANSISTOR WITH DOUBLE SIDE COOLING AND METHOD...

Field-Effect Transistor Device with Equivalent Source and Drain Reg...

SEMICONDUCTOR DEVICES WITH LOW BARRIER HEIGHT SCHOTTKY CONTACTS

Buried Grid Double Junction Barrier Schottky Diode and Method of Ma...

SEMICONDUCTOR DEVICE HAVING A JUNCTION PORTION CONTACTING A SCHOTTK...

SEMICONDUCTOR DEVICE

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH LOGIC AND MEMORY

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH LOGIC AND MEMORY

SiC SEMICONDUCTOR DEVICE WITH INSULATING FILM AND ORGANIC INSULATIN...

NITRIDE SEMICONDUCTOR DEVICE

MULTI-CHANNEL HIGH ELECTRON MOBILITY TRANSISTOR WITH DOPED GATE FINS

CAP STRUCTURE COUPLED TO SOURCE TO REDUCE SATURATION CURRENT IN HEM...

HIGH ELECTRON MOBILITY TRANSISTOR, RADIO FREQUENCY TRANSISTOR, POWE...

TRANSISTOR AND METHOD FOR MANUFACTURING TRANSISTOR