Patent Application
20160168747
The present invention relates to an apparatus and a method for manufacturing a group 13 nitride crystal, and in particular, to a technology for manufacturing a group 13 nitride single crystal such as gallium nitride and aluminum nitride.
A flux method is known as a method for manufacturing group 13 nitride crystals. In the flux method, a source gas such as a nitrogen gas is dissolved in a mixed melt (flux) containing an alkali metal or an alkali-earth metal and a group 13 metal to form a supersaturated state. In the mixed melt, a group 13 nitride crystal is grown by growing a spontaneous nucleus or by using a seed crystal as a nucleus.
In the flux method, the source gas dissolves into the mixed melt from the vapor-liquid interface between the mixed melt and the source gas, and the concentration of a solute (nitrogen) in the mixed melt tends to increase near the vapor-liquid interface, which is likely to cause solute concentration distribution in the mixed melt. Such solute concentration distribution causes deterioration in the quality of a crystal to be obtained.
As a method for reducing the solute concentration distribution in the mixed melt, a method is known in which a mixed melt is stirred through shaking, rotation, or the like. Patent Literature 1 discloses that a propeller or a baffle is provided in a crucible containing a mixed melt and the mixed melt is stirred aiming at increasing a crystal growth rate and manufacturing a group 13 nitride single crystal in a short time. It is disclosed that a crystal growth rate of 50 to 70 Cm/h in crystal growth over a relatively short period of about 30 to 40 hours has been achieved.
However, the inventors of the present invention have found that although performing shaking, stirring, or the like with such a propeller, baffle, or the like as disclosed in Patent Document 1 provided increases the crystal growth rate, the quality such as uniformity of an obtained crystal may degrade. Depending on the shape of the baffle in particular, it has been found that in long-time growth over a few hundred hours, an obtained group 13 nitride crystal may be polycrystallized, or miscellaneous crystals may be precipitated. High quality and large size have been recently demanded as users' needs for the group 13 nitride crystal. To obtain a high-quality, large-sized single group 13 nitride crystal, it is necessary that the mixed melt be maintained at a favorable stirred condition over a long time.
The present invention has been made in view of the above circumstances, and an object thereof is to provide a high-quality, large-sized group 13 nitride single crystal.
According to an embodiment, an apparatus is used for manufacturing a group 13 nitride crystal by using a flux method. The apparatus includes a reaction vessel, a rotational mechanism, and a structure. The reaction vessel contains a mixed melt and a seed crystal placed in the mixed melt. The mixed melt contains an alkali metal or an alkali-earth metal and a group 13 element. The rotational mechanism rotates the reaction vessel. The structure is provided inside the reaction vessel for stirring the mixed melt and is constructed such that a height of a first portion of the structure close to an inner wall of the reaction vessel is higher than a height of a second portion of the structure close to a center of the reaction vessel.
The following describes the embodiment according to the present invention in detail with reference to the drawings.
The manufacturing apparatus 1 is an apparatus for manufacturing a group 13 nitride crystal 5 by using the flux method. The pressure-resistant vessel 11 is, for example, made of stainless steel. An internal vessel 12 is provided inside the pressure-resistant vessel 11. A reaction vessel 13 is further housed in the internal vessel 12.
The reaction vessel 13 is a vessel used for holding a mixed melt (flux) 6 and growing the group 13 nitride crystal 5. Baffles 14 as structures for stirring the mixed melt 6 are fixed inside the reaction vessel 13 (the baffles 14 are described in detail below).
Examples of the material of the reaction vessel 13 include, but not limited to, nitrides such as boron nitride (BN) sintered bodies and pyrolytic BN (P-BN), oxides such alumina and yttrium-aluminum-garnet (YAG), and carbides such as SiC. It is preferable that an inner wall face of the reaction vessel 13, that is, the part at which the reaction vessel 13 comes into contact with the mixed melt 6 be made of a material that is resistant to reaction with the mixed melt 6. Examples of the material of the inner wall face may include nitrides such as BN, P-BN, and aluminum nitride, oxides such as alumina and YAG, and stainless steel (SUS).
The mixed melt 6 is a melt containing an alkali metal or an alkali-earth metal and a group 13 element. The alkali metal is at least one selected from sodium (Na), lithium (Li), and potassium (K). Preferable is sodium or potassium. The alkali-earth metal is at least one selected from calcium (Ca), magnesium (Mg), strontium (Sr), and barium (Ba). The group 13 element is at least one selected from boron (B), aluminum (Al), gallium (Ga), indium (In), and thallium (Tl). Preferable is gallium. The mixed melt 6 is representatively a Ga—Na mixed melt.
A seed crystal 7 is placed inside the reaction vessel 13 so as to be immersed into the mixed melt 6. In the present embodiment, the seed crystal 7 is fixed to the bottom of the reaction vessel 13. The seed crystal 7 is a nitride crystal serving as a nucleus of the crystal growth of the group 13 nitride crystal 5. Various kinds of seed crystals 7 are known, and what kind of seed crystal 7 is used should be appropriately determined in accordance with a target group 13 nitride crystal 5, growth conditions, and the like. Representative examples of the seed crystal 7 may include a substrate on which a GaN film is formed as a crystal growth layer, and a needle crystal (refer to Japanese Patent Application Laid-open No. 2007-277055 and Japanese Patent Application Laid-open No. 2011-213579, for example).
The internal vessel 12 is detachably provided on a turntable 21 in the pressure-resistant vessel 11. The turntable 21 is fixed to a rotational shaft 22 and is rotatable by a rotational mechanism 16 arranged outside the pressure-resistant vessel 11. The rotational mechanism 16 rotates the rotational shaft 22 by a motor or the like. The rotational velocity, rotational direction, and the like of the rotational shaft 22 are controlled by a controller including a computer operating in accordance with a computer program, various kinds of logic circuits, and the like (the control of the rotational shaft 22 is described in detail below). Along with the rotation of the rotational shaft 22, the internal vessel 12, the reaction vessel 13, the baffle 14, and the like rotate. The members that rotate along with the rotation of the rotational shaft 22 are not limited to these. For example, a heater 15 may further rotate, or only the reaction vessel 13 may rotate. Through the rotation of the baffle 14 along with the rotation of the reaction vessel 13, the mixed melt 6 is stirred.
A source gas including nitrogen is supplied into the pressure-resistant vessel 11. As illustrated in
The nitrogen gas flows into the pipe 34 from a gas cylinder or the like, and the pressure thereof is adjusted by a pressure controller 41. Then the nitrogen gas flows into the pipe 33 via the valve 36. The diluent gas flows into the pipe 35 from a gas cylinder or the like, and the pressure thereof is adjusted by a pressure controller 42. Then, the diluent gas flows into the pipe 33 via the valve 37. The thus pressure-adjusted nitrogen gas and diluent gas form a gas mixture in the pipe 33.
The gas mixture is supplied to the internal space of the pressure-resistant vessel 11 via a valve 38 and the pipe 31 and is supplied to the internal space of the internal vessel 12 via a valve 39 and the pipe 32 from the pipe 33. The internal space of the internal vessel 12 and the internal space of the reaction vessel 13 are connected with each other in the pressure-resistant vessel 11 and have nearly the same atmosphere and nearly the same pressure. The internal vessel 12 is detachable from the manufacturing apparatus 1. The pipe 31 is connected to the outside via the pipe 33 and a valve 40.
The pipe 33 has a pressure gauge 45. By monitoring the pressure gauge 45, the pressures of the internal spaces of the pressure-resistant vessel 11 and the internal vessel 12 (reaction vessel 13) can be adjusted. Thus, the pressures of the nitrogen gas and the diluent gas are adjusted with the valves 36, 37 and by the pressure controllers 41, 42, respectively, thereby enabling the nitrogen partial pressure in the reaction vessel 13 to be adjusted. The total pressures of the pressure-resistant vessel 11 and the internal vessel 12 can be adjusted, and the total pressure in the internal vessel 12 can be increased to suppress the vaporization of the mixed melt 6 (sodium, for example) in the reaction vessel 13. In other words, the nitrogen partial pressure having an influence on the crystal growth conditions of gallium nitride and the total pressure having an influence on the vaporization of the mixed melt 6 can be separately controlled. Naturally, only the nitrogen gas may be introduced into the reaction vessel without introducing the diluent gas. The overall configuration of the manufacturing apparatus 1 illustrated in
As illustrated in
Operation to charge the seed crystal 7, raw materials (the alkali metal or the alkali-earth metal and the group 13 element), additives such as C, and dopants such as Ge into the reaction vessel 13 may be performed with the internal vessel 12 put into a glove box having an atmosphere of an inert gas such as an argon gas. This operation may be performed with the reaction vessel 13 placed in the internal vessel 12.
The molar ratio between the group 13 element and the alkali metal contained in the mixed melt 6 is preferably set so that, but not limited to, the molar ratio of the alkali metal with respect to the total molar number of the group 13 element and the alkali metal is 40% to 95%.
After thus charging the raw materials and the like, the heater 15 is powered on to heat the internal vessel 12 and the reaction vessel 13 up to a crystal growth temperature, then the group 13 element, the alkali metal or the alkali-earth metal, other additives, and the like as the raw materials melt in the internal vessel 12 to produce the mixed melt 6. The source gas with a certain nitrogen partial pressure is brought into contact with the mixed melt 6, thereby dissolving nitrogen into the mixed melt 6. The raw materials thus dissolved into the mixed melt 6 are supplied to the surface of the seed crystal 7, and the crystal growth of the group 13 nitride crystal 5 proceeds.
In such a crystal growth process, the rotational mechanism 16 rotates the reaction vessel 13 and the baffle 14 to stir the mixed melt 6, thereby enabling the nitrogen concentration distribution in the mixed melt 6 to be maintained at a constant level. Crystal growth is performed for a long time in the mixed melt 6 with the uniform nitrogen concentration distribution, thereby enabling a high-quality, large-sized group 13 nitride crystal 5 to be manufactured.
The following describes the shape of the baffle 14 for stirring the mixed melt 6.
These baffles 14A to 14F according to the first to sixth examples illustrated in
The height H of the peripheral portion 52 is preferably within the range of, with respect to the depth D (refer to
The following describes the characteristics of the baffles 14A to 14F individually. In these different examples, portions that produce the same or similar effect may be referred to as the same reference numeral to omit duplicated description. The baffle 14A according to the first example illustrated in
The baffle 14B according to the second example illustrated in
The baffle 14C according to the third example illustrated in
The baffle 14D according to the fourth example illustrated in
In the baffle 14E according to the fifth example illustrated in
In the baffle 14F according to the sixth example illustrated in
The following describes the arrangement of the baffles 14.
In the arrangement of the baffle 14 according to the first example illustrated in
In the arrangement of the baffle 14 according to the second example illustrated in
In the arrangement of the baffle 14 according to the third example illustrated in
The following describes the rotation control of the rotational shaft 22 by the rotational mechanism 16.
When the baffle 14 is rotated in one direction at a constant velocity, no relative velocity occurs between the mixed melt 6 and the baffle 14, and an ideal flow such as an upward and downward flow of the mixed melt 6 does not occur. Given this situation, it is preferable that rotation control be performed so that the baffle 14 repeats rotation, stop, and the like, thereby producing the relative velocity between the mixed melt 6 and the baffle 14.
The rotation control according to the first example illustrated in
The rotation control according to the second example illustrated in
The following describes examples manufacturing the group 13 nitride crystal 5 using the manufacturing apparatus 1 according to the present embodiment.
In the present example, a gallium nitride (GaN) crystal was grown as the group 13 nitride crystal 5 using the baffle 14A illustrated in
First, in the reaction vessel 13 made of alumina in a glove box with a high-purity Ar atmosphere, four baffles 14A made of alumina having the shape illustrated in
Next, sodium (Na) liquefied by heating was put into the reaction vessel 13 as the mixed melt 6. After the sodium was solidified, gallium (Ga) and carbon were put thereinto. In the present example, the molar ratio between the gallium and the sodium was set at 0.25:0.75. The carbon was set at 0.5% with respect to the total molar number of the gallium and the sodium.
After that, the reaction vessel 13 was housed in the internal vessel 12, and the internal vessel 12 taken out of the glove box was incorporated into the manufacturing apparatus. As illustrated in
Subsequently, the nitrogen gas pressure in the internal vessel 12 was set at 2.2 MPa, and the heater 15 was powered on to increase the temperature of the reaction vessel 13 to a crystal growth temperature. The temperature was set at 870° C., and the nitrogen gas pressure was set at 3.0 MPa during the crystal growth process.
In this state, as illustrated in
The reaction vessel 13 is a cylindrical vessel with an open top. The triangular baffles 14A stood on the bottom face of the reaction vessel 13. Each of the baffles 14A has the height of the peripheral portion 52 is higher than the height of the central portion 51. The mixed melt 6 containing Ga and Na was poured in the reaction vessel 13. The liquid surface of the mixed melt 6 was positioned higher than the maximum height H of the peripheral portion 52 of the baffle 14A, and the entire baffle 14A was immersed into the mixed melt 6. The depth D of the mixed melt 6 was 70 mm. The relation between the depth D and the height H was H/D=0.5.
In this state, the rotation control illustrated in
As described above, the rotation control that repeats rotation and stop was performed using the baffles 14A having the shape illustrated in
Because the edges of the baffle 14A illustrated in
As a result, when a bulky GaN crystal whose length in the c-axial direction was 60 mm and whose length in a direction perpendicular to the c axis was 50 mm was prepared as the group 13 nitride crystal 5, miscellaneous crystals grew at the rate of nearly 15% of the entire yield, and nearly 10% of the grown group 13 nitride crystal 5 were polycrystallized. The prepared bulky GaN crystal was sliced in parallel with the c plane, and XRD measurement was performed thereon. It was revealed that a GaN crystal was obtained having small variations in FWHM and peak position of XRC across the entire c plane. The FWHM of XRC for the GaN crystal except the polycrystallized part in this case was 30±10 arcsec. The dislocation density of the obtained crystal was as low as 104 cm−2 or less, which was a high-quality crystal.
In the present example, a gallium nitride (GaN) crystal was grown as the group 13 nitride crystal 5 using the baffles 14B illustrated in
First, in the reaction vessel 13 made of alumina in a glove box with a high-purity Ar atmosphere, four baffles 14B made of alumina illustrated in
Next, sodium (Na) liquefied by heating was put into the reaction vessel 13 as the mixed melt 6. After the sodium solidified, gallium (Ga) and carbon were put thereinto. In the present example, the molar ratio between the gallium and the sodium was set at 0.25:0.75. The carbon was set at 0.5% with respect to the total molar number of the gallium and the sodium.
After that, the reaction vessel 13 was housed in the internal vessel 12, and the internal vessel 12 taken out of the glove box was incorporated into the manufacturing apparatus. As illustrated in
Subsequently, the nitrogen gas pressure in the internal vessel 12 was set at 2.2 MPa, and the heater 15 was powered on to increase the temperature of the reaction vessel 13 to a crystal growth temperature. The temperature was set at 870° C., and the nitrogen gas pressure was set at 3.0 MPa during the crystal growth process.
In this state, as illustrated in
Also in the present example, the flow of the mixed melt 6 when the reaction vessel 13 was stopped was like a flow illustrated in
As described above, by the rotation control that repeats rotation and stop using the baffle 14B having the shape illustrated in
However, the baffle 14B illustrated in
As a result, when a bulky GaN crystal whose length in the c-axial direction was 60 mm and whose length in a direction perpendicular to the c axis was 50 mm was prepared as the group 13 nitride crystal 5, miscellaneous crystals grew at the rate of nearly 10% of the entire yield, and nearly 5% of the grown group 13 nitride crystal 5 were polycrystallized. The growth rate of miscellaneous crystals and the degree of polycrystallization reduced compared with Example 1. This is due to the fact that the chamfered portions 59 were formed on the edges of the baffle 14B, thereby reducing the shear force when the mixed melt 6 was stirred and reducing the turbulence of the flow of the mixed melt 6. The prepared bulky GaN crystal was sliced in parallel with the c plane, and XRD measurement was performed thereon. It was revealed that a GaN crystal was obtained having small variations in FWHM and peak position of XRC across the entire c plane. The FWHM of XRC for the GaN crystal except the polycrystallized part in this case was 30±10 arcsec. The dislocation density of the obtained crystal was as low as 104 cm−2 or less, which was a high-quality crystal.
In the present example, a gallium nitride (GaN) crystal was grown as the group 13 nitride crystal 5 using the baffles 14C illustrated in
First, in the reaction vessel 13 made of alumina in a glove box with a high-purity Ar atmosphere, four baffles 14C made of alumina having the shape illustrated in
Next, sodium (Na) liquefied by heating was put into the reaction vessel 13 as the mixed melt 6. After the sodium solidified, gallium (Ga) and carbon were put thereinto. In the present example, the molar ratio between the gallium and the sodium was set at 0.25:0.75. The carbon was set at 0.5% with respect to the total molar number of the gallium and the sodium.
After that, the reaction vessel 13 was housed in the internal vessel 12, and the internal vessel 12 taken out of the glove box was incorporated into the manufacturing apparatus. As illustrated in
Subsequently, the nitrogen gas pressure in the internal vessel 12 was set at 2.2 MPa, and the heater 15 was powered on to increase the temperature of the reaction vessel 13 to a crystal growth temperature. The temperature was set at 870° C., and the nitrogen gas pressure was set at 3.0 MPa during the crystal growth process.
In this state, as illustrated in
Also in the present example, the flow of the mixed melt 6 when the reaction vessel 13 was stopped was like a flow illustrated in
As described above, by the rotation control that repeats rotation and stop using the baffle 14C having the shape illustrated in
The baffle 14C used in the present example produced extremely small turbulence, because almost no shear force occurred when the mixed melt 6 and the baffle 14C came into contact with each other, because the edges of the baffle 14C are the curved face 60.
As a result, when a bulky GaN crystal whose length in the c-axial direction was 60 mm and whose length in a direction perpendicular to the c axis was 50 mm was prepared as the group 13 nitride crystal 5, no miscellaneous crystals grew, and the grown group 13 nitride crystal 5 was not polycrystallized. This is due to the fact that the edges of the baffle 14C are the curved face 60, thereby causing the shear force when the mixed melt 6 was stirred to hardly occur and causing the turbulence of the flow of the mixed melt 6 to be extremely small. When the bulky GaN crystal was sliced in parallel with the c plane, and XRD measurement was performed thereon, it was revealed that a GaN crystal was obtained having small variations in FWHM and peak position of XRC across the entire c plane. The FWHM of XRC for the GaN crystal in this case was 30±10 arcsec. The dislocation density of the obtained crystal was as low as 104 cm−2 or less, which was a high-quality crystal.
As revealed in Examples 1 to 3, when the edges of the baffle 14 are closer to a curved face, the shear force when the mixed melt 6 and the baffle 14 come into contact with each other reduces, thereby reducing the turbulence of the flow of the mixed melt 6 and producing neither polycrystallization of the group 13 nitride crystal nor the precipitation of miscellaneous crystals. Such an effect can be achieved similarly also when the highest portion of the peripheral portion 52 with the height H is slightly deviated from the outermost portion of the baffle 14D toward the central side as illustrated in
In the present example, the baffles 14C made of alumina illustrated in
The central axis 70 of the reaction vessel 13 being different from the rotational shaft 22 made the mixed melt 6 asymmetric with respect to the rotational shaft 22. This enabled a faster flow in the part of the mixed melt 6 remote from the rotational shaft 22 than a flow in the part of the mixed melt 6 close to the rotational shaft 22 to be produced, and the entire mixed melt 6 to be stirred efficiently. However, turbulence increased in the part remote from the rotational shaft 22, and there were cases when miscellaneous crystals grew.
As a result, when a bulky GaN crystal whose length in the c-axial direction was 60 mm and whose length in a direction perpendicular to the c axis was 50 mm was prepared as the group 13 nitride crystal 5, miscellaneous crystals grew at the rate of nearly 20% of the entire yield, and 15% of the grown group 13 nitride crystal were polycrystallized. The present example was different from Example 3 in that although the uniformity of the crystal improved, the growth rate of miscellaneous crystals increased, and the degree of polycrystallization increased. This is due to the fact that the baffles 14C were arranged point-symmetrically with respect to the central axis 70 of the reaction vessel 13, and the reaction vessel 13 was arranged at the position different from the rotational shaft 22. This causes the mixed melt 6 to be stirred efficiently to improve the uniformity of the mixed melt 6. In addition, the turbulence of the mixed melt 6 increased in the part remote from the rotational shaft 22, thereby producing a local highly supersaturated state. The prepared bulky GaN crystal was sliced in parallel with the c plane, and XRD measurement was performed thereon. It was revealed that a GaN crystal was obtained having small variations in FWHM and peak position of XRC across the entire c plane. The FWHM of XRC for the GaN crystal except the polycrystallized part in this case was 30±7 arcsec. The dislocation density of the obtained crystal was as low as 104 cm−2 or less, which was a high-quality crystal.
In the present example, the baffles 14C made of alumina illustrated in
The baffles 14C were arranged not with respect to the central axis 70 of the reaction vessel 13 but were arranged point-symmetrically with respect to the rotational shaft 22 of the rotational mechanism 16, thereby making the mixed melt 6 asymmetric with respect to the rotational shaft 22. This enabled a faster flow in the part of the mixed melt 6 remote from the rotational shaft 22 than a flow in the part of the mixed melt 6 close to the rotational shaft 22 to be produced and the entire mixed melt 6 to be stirred efficiently. However, turbulence increased in the part remote from the rotational shaft 22, and there were cases when miscellaneous crystals grew.
As a result, when a bulky GaN crystal whose length in the c-axial direction was 60 mm and whose length in a direction perpendicular to the c axis was 50 mm was prepared as the group 13 nitride crystal 5, miscellaneous crystals grew at the rate of 25% of the entire yield, and 20% of the grown group 13 nitride crystal were polycrystallized. The present example was different from Example 3 in that although the uniformity of the crystal improved, the growth rate of miscellaneous crystals increased, and the degree of polycrystallization increased. This is due to the fact that the baffles 14C were arranged not with respect to the central axis 70 of the reaction vessel 13, and the reaction vessel 13 was arranged so that the baffles 14C were point-symmetric with respect to the rotational shaft 22, thereby stirring the mixed melt 6 efficiently to improve the uniformity of the mixed melt 6 and that the turbulence of the mixed melt 6 increased in the part remote from the rotational shaft 22, thereby producing a local highly supersaturated state. The prepared bulky GaN crystal was sliced in parallel with the c plane, and XRD measurement was performed thereon. It was revealed that a GaN crystal was obtained having small variations in FWHM and peak position of XRC across the entire c plane. The FWHM of XRC for the GaN crystal except the polycrystallized part in this case was 30±7 arcsec. The dislocation density of the obtained crystal was as low as 104 cm−2 or less, which was a high-quality crystal.
In the present example, the rotation control illustrated in
The flow of the mixed melt 6 when the reaction vessel 13 was stopped was like a flow illustrated in
As described above, using the baffle 14C having the shape illustrated in
As a result, when a bulky GaN crystal whose length in the c-axial direction was 60 mm and whose length in a direction perpendicular to the c axis was 50 mm was prepared as the group 13 nitride crystal 5, no miscellaneous crystals grew, and the grown group 13 nitride crystal 5 was not polycrystallized. The present example was different from Example 3 in that the uniformity of the crystal improved. This is due to the fact that the rotation is repeated to be reversed, thereby enabling the entire mixed melt 6 to be stirred efficiently. When the bulky GaN crystal was sliced in parallel with the c plane, and XRD measurement was performed thereon, it was revealed that a GaN crystal was obtained having small variations in FWHM and peak position of XRC across the entire c plane. The FWHM of XRC for the GaN crystal in this case was 30±5 arcsec. The dislocation density of the obtained crystal was as low as 104 cm−2 or less, which was a high-quality crystal.
In the present example, the height H of the baffle 14C illustrated in
As a result, when a bulky GaN crystal whose length in the c-axial direction was 60 mm and whose length in a direction perpendicular to the c axis was 50 mm was prepared as the group 13 nitride crystal 5, miscellaneous crystals grew at the rate of 25% of the entire yield, and 30% of the grown group 13 nitride crystal were polycrystallized. The present example was different from Example 3 in that the uniformity of the crystal was lowered. This is due to the fact that the height H of the baffle 14C was reduced, thereby lowering stirring capability and lowering the uniformity of the entire mixed melt 6. The prepared bulky GaN crystal was sliced in parallel with the c plane, and XRD measurement was performed thereon. It was revealed that the FWHM and peak position of XRC varied across the entire c plane. The FWHM of XRC for the GaN crystal in this case was 50±15 arcsec.
In the present example, the height H of the baffle 14C illustrated in
As a result, when a bulky GaN crystal whose length in the c-axial direction was 65 mm and whose length in a direction perpendicular to the c axis was 55 mm was prepared as the group 13 nitride crystal 5, miscellaneous crystals grew at the rate of 40% of the entire yield, and % of the grown group 13 nitride crystal 5 were polycrystallized. The present example was different from Example 3 in that the growth rate of miscellaneous crystals increased, and the degree of polycrystallization increased. This is due to the fact that the height of the baffle 14C was increased, thereby increasing the turbulence of the flow of the mixed melt 6 at the vapor-liquid interface. The prepared bulky GaN crystal was sliced in parallel with the c plane, and XRD measurement was performed thereon. It was revealed that the FWHM and peak position of XRC varied across the entire c plane. The FWHM of XRC for the GaN crystal except the polycrystallized part in this case was 50±15 arcsec.
As described above, unlike the conventional technology (Patent Document 1), the present embodiment can maintain the mixed melt 6 at a uniform state even when long-time growth over 100 hours or more is performed. This can manufacture a high-quality, large-sized group 13 nitride crystal.
The present invention can provide a high-quality, large-sized group 13 nitride single crystal.
Although the invention has been described with respect to specific embodiments for a complete and clear disclosure, the appended claims are not to be thus limited but are to be construed as embodying all modifications and alternative constructions that may occur to one skilled in the art that fairly fall within the basic teaching herein set forth.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2013-165084 | Aug 2013 | JP | national |
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2014/071134 | 8/5/2014 | WO | 00 |
