Gallium nitride

Industry

CPC
C30B29/406

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Current Industry

C30B29/406Gallium nitride

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Method for producing a layer of aluminum nitride (ALN) on a structu...
- Patent number 12,338,545
- Issue date Jun 24, 2025
- COMMISSARIAT L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Maxime Legallais
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Substrates for III-nitride epitaxy
- Patent number 12,331,426
- Issue date Jun 17, 2025
- X-FAB SEMICONDUCTOR FOUNDRIES GMBH
- Victor Sizov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial wafer, semiconductor device, and method for manufacturing...
- Patent number 12,334,340
- Issue date Jun 17, 2025
- Mitsubishi Electric Corporation
- Atsushi Era
- C30 - CRYSTAL GROWTH
Information Patent Grant
Polycrystalline ceramic substrate
- Patent number 12,315,721
- Issue date May 27, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of manufacturing gallium nitride single-crystal substrate an...
- Patent number 12,290,899
- Issue date May 6, 2025
- Kyocera Corporation
- Yuri Osumi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial structure
- Patent number 12,281,411
- Issue date Apr 22, 2025
- GlobalWafers Co., Ltd.
- Jia-Zhe Liu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for preparing a self-supporting substrate from a film base s...
- Patent number 12,281,408
- Issue date Apr 22, 2025
- Yiguan Information Technology (Shanghai) Co., Ltd.
- Tao Jiang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a substrate for the epitaxial growth of a laye...
- Patent number 12,270,123
- Issue date Apr 8, 2025
- Soitec
- Eric Guiot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride single crystal substrate
- Patent number 12,258,678
- Issue date Mar 25, 2025
- Sumitomo Chemical Company, Limited
- Takashi Sato
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for obtaining a nitride layer
- Patent number 12,252,807
- Issue date Mar 18, 2025
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Guy Feuillet
- C30 - CRYSTAL GROWTH
Information Patent Grant
Hydrogen recycle system and hydrogen recycle method
- Patent number 12,246,963
- Issue date Mar 11, 2025
- National University Corporation Tokai National Higher Education and Research...
- Shinji Kambara
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Multilayer film structure and method for producing same
- Patent number 12,247,297
- Issue date Mar 11, 2025
- Tosoh Corporation
- Yuya Tsuchida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor wafer and method for manufacturing same
- Patent number 12,243,739
- Issue date Mar 4, 2025
- Mitsubishi Electric Corporation
- Yuki Taketomi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for stripping gallium nitride substrate
- Patent number 12,243,746
- Issue date Mar 4, 2025
- SUZHOU METABRAIN INTELLIGENT TECHNOLOGY CO., LTD.
- Fen Guo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride substrate with oxygen gradient, method of making,...
- Patent number 12,224,172
- Issue date Feb 11, 2025
- SLT TECHNOLOGIES, INC.
- Mark P. D'Evelyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polycrystalline ceramic substrate and method of manufacture
- Patent number 12,224,173
- Issue date Feb 11, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineered substrate structures for power and RF applications
- Patent number 12,217,957
- Issue date Feb 4, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Preparation method for semiconductor structure
- Patent number 12,183,576
- Issue date Dec 31, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Peng Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Incorporating semiconductors on a polycrystalline diamond substrate
- Patent number 12,176,221
- Issue date Dec 24, 2024
- Texas State University
- Raju Ahmed
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Growth of A-B crystals without crystal lattice curvature
- Patent number 12,168,839
- Issue date Dec 17, 2024
- Freiberger Compound Materials GMBH
- Berndt Weinert
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal growth method and a substrate for a semiconductor device
- Patent number 12,170,200
- Issue date Dec 17, 2024
- Kyocera Corporation
- Takehiro Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of obtaining a smooth surface with epitaxial lateral overgrowth
- Patent number 12,146,237
- Issue date Nov 19, 2024
- The Regents of the University of California
- Takeshi Kamikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Non-polar III-nitride binary and ternary materials, method for obta...
- Patent number 12,148,612
- Issue date Nov 19, 2024
- Mengyao Xie
- C30 - CRYSTAL GROWTH
Information Patent Grant
Joined body, laser oscillator, laser amplifier, and joined body man...
- Patent number 12,142,888
- Issue date Nov 12, 2024
- National Institute for Materials Science
- Hiroaki Furuse
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a nitride layer
- Patent number 12,134,836
- Issue date Nov 5, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Matthew Charles
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor template, method for manufacturing nitride se...
- Patent number 12,129,572
- Issue date Oct 29, 2024
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,116,695
- Issue date Oct 15, 2024
- United States of America as represented by Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride crystal substrate and method for manufacturing the same
- Patent number 12,104,279
- Issue date Oct 1, 2024
- Sumitomo Chemical Company, Limited
- Fumimasa Horikiri
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 12,107,129
- Issue date Oct 1, 2024
- Mitsubishi Chemical Corporation
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GROUP III NITRIDE LAMINATE AND METHOD OF PRODUCING GROUP III NITRID...
- Publication number 20250207296
- Publication date Jun 26, 2025
- Sumitomo Chemical Company, Limited
- Taiki YAMAMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN CRYSTAL AND METHOD FOR PRODUCING GaN CRYSTAL
- Publication number 20250198052
- Publication date Jun 19, 2025
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF INSPECTING GROUP-III ELEMENT NITRIDE SUBSTRATE, METHOD OF...
- Publication number 20250201636
- Publication date Jun 19, 2025
- NGK Insulators, Ltd.
- Yoshitaka KURAOKA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEED SUBSTRATE FOR HIGH CHARACTERISTIC EPITAXIAL GROWTH, METHOD FOR...
- Publication number 20250198049
- Publication date Jun 19, 2025
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Devices with compositionally graded alloy layers
- Publication number 20250194189
- Publication date Jun 12, 2025
- Cornell University
- Shivali Agrawal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING HETEROEPITAXIAL FILM
- Publication number 20250163609
- Publication date May 22, 2025
- Shin-Etsu Handotai Co., Ltd.
- Tsuyoshi OHTSUKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE SUBSTRATE, AND SUBSTRATE FOR EPITAXIALLY GROWING GROUP 13...
- Publication number 20250146179
- Publication date May 8, 2025
- NGK Insulators, Ltd.
- Yoshitaka KURAOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS
- Publication number 20250149332
- Publication date May 8, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LATTICE POLARITY CONTROL IN III-NITRIDE SEMICONDUCTOR HETEROSTRUCTURES
- Publication number 20250149334
- Publication date May 8, 2025
- The Regents of the University of Michigan
- Ping Wang
- C30 - CRYSTAL GROWTH
Information Patent Application
POLYCRYSTALLINE CERAMIC SUBSTRATE AND METHOD OF MANUFACTURE
- Publication number 20250149333
- Publication date May 8, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE CRYSTALS
- Publication number 20250129514
- Publication date Apr 24, 2025
- Panasonic Holdings Corporation
- Tomio YAMASHITA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR LAMINATE, SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR LA...
- Publication number 20250132151
- Publication date Apr 24, 2025
- Sumitomo Chemical Company, Limited
- Hajime FUJIKURA
- C30 - CRYSTAL GROWTH
Information Patent Application
ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS
- Publication number 20250132152
- Publication date Apr 24, 2025
- QROMIS,INC.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE AND NITRIDE CRYSTAL...
- Publication number 20250129513
- Publication date Apr 24, 2025
- Sumitomo Chemical Company, Limited
- Taichiro KONNO
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
GaN CRYSTAL AND GaN WAFER
- Publication number 20250122642
- Publication date Apr 17, 2025
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20250122643
- Publication date Apr 17, 2025
- Toyoda Gosei Co., Ltd.
- Koji OKUNO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A CONTINUOUS NITRIDE LAYER
- Publication number 20250118552
- Publication date Apr 10, 2025
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Matthew CHARLES
- C30 - CRYSTAL GROWTH
Information Patent Application
METAL ORGANIC CHEMICAL VAPOR DEPOSITION OF SEMI-INSULATING EXTRINSI...
- Publication number 20250109524
- Publication date Apr 3, 2025
- Wisconsin Alumni Research Foundation
- Shubhra S. Pasayat
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE CRYSTAL MANUFACTURING APPARATUS AND MANUFACTURING...
- Publication number 20250092565
- Publication date Mar 20, 2025
- Panasonic Holdings Corporation
- Junichi TAKINO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PREPARING GALLIUM NITRIDE (GAN) SINGLE-CRYSTAL SUBSTRATE...
- Publication number 20250092572
- Publication date Mar 20, 2025
- Peking University
- Xinqiang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCORPORATING SEMICONDUCTORS ON A POLYCRYSTALLINE DIAMOND SUBSTRATE
- Publication number 20250079188
- Publication date Mar 6, 2025
- Texas State University
- Raju Ahmed
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME
- Publication number 20250059675
- Publication date Feb 20, 2025
- Shin-Etsu Handotai Co., Ltd.
- Keitaro TSUCHIYA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING NITRIDE SE...
- Publication number 20250059676
- Publication date Feb 20, 2025
- Shin-Etsu Handotai Co., Ltd.
- Ippei KUBONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR SUBSTRATE
- Publication number 20250062120
- Publication date Feb 20, 2025
- Kyocera Corporation
- Takehiro NISHIMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERME...
- Publication number 20250054754
- Publication date Feb 13, 2025
- Sumitomo Chemical Company, Limited
- Masafumi YOKOYAMA
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Application
GROUP 13 NITRIDE SINGLE CRYSTAL SUBSTRATE
- Publication number 20250011969
- Publication date Jan 9, 2025
- NGK Insulators, Ltd.
- Katsuhiro IMAI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING HETEROEPITAXIAL WAFER
- Publication number 20240429046
- Publication date Dec 26, 2024
- Shin-Etsu Handotai Co., Ltd.
- Toshiki MATSUBARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY
- Publication number 20240420955
- Publication date Dec 19, 2024
- Future Semiconductor Business, Inc
- Kyusang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...
- Publication number 20240417882
- Publication date Dec 19, 2024
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROWTH METHOD AND STRUCTURE OF LED EPITAXY
- Publication number 20240405159
- Publication date Dec 5, 2024
- Focus Lightings Tech (Suqian) Co., Ltd.
- Guochang LI
- C30 - CRYSTAL GROWTH

Gallium nitride

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Method for producing a layer of aluminum nitride (ALN) on a structu...

Substrates for III-nitride epitaxy

Epitaxial wafer, semiconductor device, and method for manufacturing...

Polycrystalline ceramic substrate

Method of manufacturing gallium nitride single-crystal substrate an...

Epitaxial structure

Method for preparing a self-supporting substrate from a film base s...

Method for producing a substrate for the epitaxial growth of a laye...

Gallium nitride single crystal substrate

Process for obtaining a nitride layer

Hydrogen recycle system and hydrogen recycle method

Multilayer film structure and method for producing same

Semiconductor wafer and method for manufacturing same

Method for stripping gallium nitride substrate

Group III nitride substrate with oxygen gradient, method of making,...

Polycrystalline ceramic substrate and method of manufacture

Engineered substrate structures for power and RF applications

Preparation method for semiconductor structure

Incorporating semiconductors on a polycrystalline diamond substrate

Growth of A-B crystals without crystal lattice curvature

Crystal growth method and a substrate for a semiconductor device

Optimized heteroepitaxial growth of semiconductors

Method of obtaining a smooth surface with epitaxial lateral overgrowth

Non-polar III-nitride binary and ternary materials, method for obta...

Joined body, laser oscillator, laser amplifier, and joined body man...

Method for producing a nitride layer

Nitride semiconductor template, method for manufacturing nitride se...

Optimized heteroepitaxial growth of semiconductors

Nitride crystal substrate and method for manufacturing the same

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Patents Applicationslast 30 patents

GROUP III NITRIDE LAMINATE AND METHOD OF PRODUCING GROUP III NITRID...

GaN CRYSTAL AND METHOD FOR PRODUCING GaN CRYSTAL

METHOD OF INSPECTING GROUP-III ELEMENT NITRIDE SUBSTRATE, METHOD OF...

SEED SUBSTRATE FOR HIGH CHARACTERISTIC EPITAXIAL GROWTH, METHOD FOR...

Devices with compositionally graded alloy layers

METHOD FOR PRODUCING HETEROEPITAXIAL FILM

COMPOSITE SUBSTRATE, AND SUBSTRATE FOR EPITAXIALLY GROWING GROUP 13...

ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS

LATTICE POLARITY CONTROL IN III-NITRIDE SEMICONDUCTOR HETEROSTRUCTURES

POLYCRYSTALLINE CERAMIC SUBSTRATE AND METHOD OF MANUFACTURE

METHOD FOR PRODUCING GROUP III NITRIDE CRYSTALS

SEMICONDUCTOR LAMINATE, SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR LA...

ENGINEERED SUBSTRATE STRUCTURES FOR POWER AND RF APPLICATIONS

PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE AND NITRIDE CRYSTAL...

GaN CRYSTAL AND GaN WAFER

METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR

METHOD FOR PRODUCING A CONTINUOUS NITRIDE LAYER

METAL ORGANIC CHEMICAL VAPOR DEPOSITION OF SEMI-INSULATING EXTRINSI...

GROUP III NITRIDE CRYSTAL MANUFACTURING APPARATUS AND MANUFACTURING...

METHOD FOR PREPARING GALLIUM NITRIDE (GAN) SINGLE-CRYSTAL SUBSTRATE...

INCORPORATING SEMICONDUCTORS ON A POLYCRYSTALLINE DIAMOND SUBSTRATE

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING SAME

NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING NITRIDE SE...

SEMICONDUCTOR SUBSTRATE

PRODUCTION METHOD FOR NITRIDE CRYSTAL SUBSTRATE, AND PEELED INTERME...

GROUP 13 NITRIDE SINGLE CRYSTAL SUBSTRATE

METHOD FOR PRODUCING HETEROEPITAXIAL WAFER

FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY

SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...

GROWTH METHOD AND STRUCTURE OF LED EPITAXY