Claims
- 1. An optical evaluation method for evaluating processing performed with respect to a substrate having a semiconductor region in a chamber, said method comprising the steps of:supplying measurement light to the semiconductor region of said substrate in said chamber; intermittently supplying exciting light to said semiconductor region; and calculating a change rate of a reflectance of the measurement light by dividing a difference between the respective reflectances of the measurement light in the presence and absence of said exciting light supplied to said semiconductor region by the reflectance of the measurement light in the absence of the exciting light, wherein said processing is a process of introducing an impurity into said semiconductor region, the change rate of the reflectance of the measurement light at a specified energy value of the measurement light which provides a near extremal value in a spectrum of the change rate of the reflectance of the measurement light is calculated in said step of calculating the change rate of the reflectance, said specified energy value of the measurement light is any value included in a range of 2.9 to 3.7 eV, and said semiconductor region includes silicon.
- 2. A method of manufacturing a semiconductor device according to claim 1, wherein the change rate of the reflectance of the measurement light of a wavelength of 300 to 600 nm is calculated in said step of calculating the change rate of the reflectance.
- 3. A method of manufacturing a semiconductor device according to claim 1, wherein said exciting light is intermittently emitted at a frequency of 1 kHz or less in said step of supplying the exciting light.
- 4. A method of manufacturing a semiconductor device according to claim 1, wherein said semiconductor region is composed of n-type silicon.
- 5. An optical evaluation method for evaluating processing performed with respect to a substrate having a semiconductor region in a chamber, said method comprising the steps of:supplying measurement light to the semiconductor region of said substrate in said chamber; intermittently supplying exciting light to said semiconductor region; and calculating a change rate of a reflectance of the measurement light by dividing a difference between the respective reflectances of the measurement light in the presence and absence of said exciting light supplied to said semiconductor region by the reflectance of the measurement light in the absence of the exciting light, wherein said processing is an annealing process performed after impurity ions are implanted in said semiconductor region, the change rate of the reflectance of the measurement light at a specified energy value of the measurement light which provides a near extremal value in a spectrum of the change rate of the reflectance of the measurement light is calculated in said step of calculating the change rate of the reflectance, said specified energy value of the measurement light is any value included in a range of 2.9 to 3.7 eV, and said semiconductor region includes silicon.
- 6. A method of manufacturing a semiconductor device according to claim 5, wherein the change rate of the reflectance of the measurement light of a wavelength of 300 to 600 nm is calculated in said step of calculating the change rate of the reflectance.
- 7. A method of manufacturing a semiconductor device according to claim 5, wherein said exciting light is intermittently emitted at a frequency of 1 kHz or less in said step of supplying the exciting light.
- 8. A method of manufacturing a semiconductor device according to claim 5, wherein said semiconductor region is composed of n-type silicon.
- 9. A method of manufacturing a semiconductor device according to claim 5, wherein the change rate of the reflectance is calculated at regular time intervals in said step of calculating the change rate of the reflectance, and the annealing process is terminated at the time at which the change rate becomes a given value.
- 10. A method of manufacturing a semiconductor device according to claim 9, wherein said specified energy value of the measurement light is 3.3 eV.
- 11. A method of manufacturing a semiconductor device according to claim 9, said given value is −12.0.
Priority Claims (4)
Number |
Date |
Country |
Kind |
8-296592 |
Nov 1996 |
JP |
|
8-350612 |
Dec 1996 |
JP |
|
9-015382 |
Jan 1997 |
JP |
|
9-189841 |
Jul 1997 |
JP |
|
Parent Case Info
This application is a Continuation of application Ser. No. 09/610,640, filed Jul. 5, 2000 which is a Divisional of application Ser. No. 08/965,892 filed Nov. 7, 1997, now U.S. Pat. No. 6,113,733.
US Referenced Citations (25)
Foreign Referenced Citations (5)
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Nov 1994 |
EP |
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EP |
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JP |
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JP |
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Non-Patent Literature Citations (2)
Entry |
“Supervisory Run-To-Run Control of Polysilicon Gate Etch Using In Situ Ellipsometry”, by Butlers et al., IEEE Transaction on Semiconductor Manufacturing, vol. 7, No. 2, May 1, 1995, pp. 193-201. |
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Continuations (1)
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Number |
Date |
Country |
Parent |
09/610640 |
Jul 2000 |
US |
Child |
10/461403 |
|
US |