Referring to
The removal device 10 comprises a plurality of sand spraying units 11 provided horizontally and above the conveyor 20 by a predetermined distance, a blowing unit 12 having a first sub-unit right above the wafer 50 by a predetermined distance and a second sub-unit right below the wafer 50 by a predetermined distance, and a dust removing unit 15 above the sand spraying units 11.
The conveyor (e.g., a conveyor belt) 20 has one end passing the wafer feed device 30 for conveying defective wafers 50 to the wafer collecting device 40 at the other end by passing a space between the sand spraying units 11 and the second sub-unit of the blowing unit 12.
The multi-layer wafer 50 comprises a metal layer 55 on a top surface, a lower silicon substrate 51, and a film 52 between the metal layer 55 and the substrate 51.
In operation, the opposite sand spraying units 11 are adapted to horizontally spray sand toward each other. Further, the first sub-unit of the blowing unit 12 is adapted to blow air toward the second sub-unit thereof (i.e., toward the wafer 50). As a result, the sand is sucked and falls on a top surface of the wafer 50 like a trajectory. This arrangement aims to decrease the impinging force of sand exerted on the wafer 50. Otherwise, the film 52 and the substrate 51 thereunder may be damaged. Circuitry (i.e., layout pattern) on the top surface of the wafer 50 is destroyed and turns into dust and ashes. The dust removing unit 15 is adapted to draw the dust and ashes out of the removal device 10 so as to bring a minimum impact to the environment. A circuit-less layer 56 in the metal layer 55 is exposed at end of the layout pattern removal process. The wafers 50 collected at the wafer collecting device 40 are adapted to reuse or recycle as detailed later.
Thickness of the collected wafer is less than that of the defective wafer. In one application, the collected wafers are recycled as materials for fabricating test wafers when they have a thickness no less than 680 μm. In practice, a defective layout pattern can be used as a test wafer for three or four times by subjecting to the above layout pattern removal process. In another application, the collected wafers are recycled as materials for manufacturing substrates of solar boards when they have a thickness less than 680 μm.
While the invention herein disclosed has been described by means of specific embodiments, numerous modifications and variations could be made thereto by those skilled in the art without departing from the scope and spirit of the invention set forth in the claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 095139126 | Oct 2006 | TW | national |