The present invention relates to an apparatus configured to produce conditioned water useful as wash water or the like for semiconductor wafers by adding a pH adjuster and/or a redox potential regulator to ultrapure water. The present invention relates to an apparatus configured to stably produce conditioned water with a low dissolved oxygen (DO) concentration while eliminating problems such as carry-in of DO from a chemical solution by a pH adjuster and/or a redox potential regulator and foaming.
In a step of washing and rinsing semiconductor wafers on which metals are exposed, conditioned water in which a pH adjuster such as an acid or alkali, or a redox potential regulator such as an oxidant or a reductant is dissolved in ultrapure water at the minimum necessary concentration that is very low may be used as wash water (including rinse water) in some cases, for suppressing charging of the wafers, corrosion or dissolution of the metals, and adhesion of fine particles (for example, PTL 1).
As a method for producing the wash water, a method in which a chemical solution in which a pH adjuster and/or a redox potential regulator is dissolved in water is injected is often employed because of its simple operation. Examples of the method for injecting a chemical solution include a method using a pump and a method using a closed container and compression of an inert gas such as N2 therein, and both are practically used.
If DO is contained in the ultrapure water into which the chemical solution is injected, problems such as oxidation of wafer materials during washing and rinsing occur. Therefore, ultrapure water for producing conditioned water is sufficiently degassed and thus generally has a DO concentration of less than 10 μg/L.
When a chemical solution of a pH adjuster, a redox potential regulator or the like is added to the ultrapure water, DO contained in the chemical solution is incorporated into the ultrapure water, and the DO concentration of conditioned water to be obtained becomes higher than the DO concentration of the ultrapure water.
Some chemical solutions are foamable, and there may be problems that the chemical injection pump is air-locked due to foaming, thereby making injection impossible, and the display of the flow meter used for controlling the amount of the chemical solution to be injected is wrong.
PTL 1: JP 2016-139766 A
It is an object of the present invention to provide an apparatus for producing conditioned water which solves problems such as incorporation of DO due to the chemical solution injected into ultrapure water, injection failure and measurement failure of the flow meter due to foaming of the chemical solution.
The inventor has found that the aforementioned problems can be solved by degassing the chemical solution using a degassing device immediately before injection into ultrapure water.
The gist of the present invention is as follows.
[1] An apparatus for producing conditioned water configured to add a pH adjuster and/or a redox potential regulator to ultrapure water to produce conditioned water, comprising: a chemical tank configured to store a chemical solution containing the pH adjuster and/or the redox potential regulator; a chemical injection pipe configured to inject the chemical solution in the chemical tank into the ultrapure water; and a degassing device configured to degas the chemical solution injected into the ultrapure water.
[2] The apparatus for producing conditioned water according to [1], wherein the degassing device is provided in the chemical injection pipe, and the chemical injection pipe comprises a chemical injection pump and a flow meter on the downstream side of the degassing device.
[3] The apparatus for producing conditioned water according to [1] or [2], comprising a return pipe configured to return part of the chemical solution degassed by the degassing device to the chemical tank.
[4] The apparatus for producing conditioned water according to any one of [1] to [3], wherein the chemical solution contains hydrochloric acid, acetic acid, nitric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, ammonia, sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide, or ammonium carbonate as the pH adjuster.
[5] The apparatus for producing conditioned water according to any one of [1] to [4], wherein the chemical solution contains hydrogen peroxide or nitric acid as the redox potential regulator.
[6] The apparatus for producing conditioned water according to any one of [1] to [5], wherein the conditioned water is wash water or rinse water for semiconductor wafers.
[7] The apparatus for producing conditioned water according to any one of [1] to [6], comprising: a water supply pipe configured to supply the ultrapure water to a use place, wherein the chemical injection pipe is connected to the water supply pipe.
When adding a pH adjuster and/or a redox potential regulator into ultrapure water to produce conditioned water useful as wash water or the like for semiconductor wafers, the present invention can solve the problems such as incorporation of DO from the chemical solution, injection failure and measurement failure of the flow meter due to foaming of the chemical solution, thereby enabling stable production of conditioned water with a low DO concentration and high water quality.
Hereinafter, the present invention will be described in detail with reference to the drawings.
The apparatus for producing conditioned water of the present invention configured to add a pH adjuster and/or a redox potential regulator to ultrapure water to produce conditioned water includes: a chemical tank 1 configured to store a chemical solution containing the pH adjuster and/or the redox potential regulator; a chemical injection pipe 3 configured to inject the chemical solution in the chemical tank 1 into the ultrapure water; and a degassing device 6 configured to degas the chemical solution injected into the ultrapure water. The chemical solution from the chemical tank 1 with a flow rate adjusted by a chemical injection pump 2 and a flow meter 5 is generally injected into a water supply pipe 4 configured to supply ultrapure water at a constant flow rate.
In the apparatus for producing conditioned water in
Providing the degassing device 6 so that the chemical injection pump 2 and the flow meter 5 are located on the downstream side of the degassing device 6 in the chemical injection pipe 3 can prevent air lock of the chemical injection pump 2 and malfunction of the flow meter 5 due to foaming of the chemical solution, while removing DO in the chemical solution.
In
The degree of degassing by the degassing device may be such that a chemical solution with a low DO concentration satisfying the DO concentration required for conditioned water can be obtained.
The amount of the degassed solution to be returned to the chemical tank 1 by the return pipe 7 is not particularly limited but is generally preferably about 30 to 50% of the degassed solution, for obtaining the aforementioned effect by returning without significantly reducing the processing efficiency.
In the case of returning part of the degassed solution to the chemical tank 1, the return pipe 7 may be provided with a filter 8 to remove impurities in the chemical solution.
The apparatus in
In the present invention, the chemical solution injected into ultrapure water is a chemical solution prepared by dissolving a pH adjuster and/or a redox potential regulator in ultrapure water.
Examples of the pH adjuster include hydrochloric acid, acetic acid, nitric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, ammonia, sodium hydroxide, potassium hydroxide, tetramethylammonium hydroxide, and ammonium carbonate.
Examples of the redox potential regulator include hydrogen peroxide and nitric acid.
The chemical solution used in the present invention generally contains these agents at a concentration of about 20 to 48 wt %. Generally, conditioned water with a concentration of the agents of about 0.1 to 100 mg/L is produced by injecting such a chemical solution into ultrapure water.
The ultrapure water to which the chemical solution is added preferably has a low DO concentration, and ultrapure water with a low DO concentration such as a DO concentration of less than 10 μg/L, preferably less than 1 μg/L, is generally used. It is also possible to use ultrapure water with a DO concentration of 10 μg/L or more by providing a degassing device in the water supply pipe for ultrapure water, as in
The present invention is effective in the case of producing conditioned water with a low DO concentration such as a DO concentration of 10 μg/L or less, particularly less than 1 μg/L, by injecting the aforementioned chemical solution into ultrapure water.
Although conditioned water produced by the present invention is useful as wash water or rinse water for semiconductor wafers, there is no limitation to these applications. The conditioned water can be used effectively for applications which require conditioned water with a low DO concentration.
Hereinafter, the present invention will be more specifically described by way of Examples.
Conditioned water was produced under the following conditions using the apparatus for producing conditioned water of the present invention having the configuration shown in
DO concentration in ultrapure water: Less than 1 μg/L
Flow rate of ultrapure water: 40 L/min
Chemical solution: 1.0-wt % NH4OH aqueous solution (which was purposely foamed by stirring)
Amount of chemical solution injected: 80 m L/min
Target NH4OH concentration in conditioned water: 20 mg/L
A membrane degassing device (Liqui-Cel) incorporating a 10-inch degassing membrane was used as a degassing device, and a vacuum pump was used for degassing.
As a result, the DO concentration in the conditioned water obtained was less than 1 μg/L, and the DO concentration in ultrapure water used for producing the conditioned water did not increase.
Further, time-dependent changes in NH4OH concentration in the conditioned water obtained were as shown in
Conditioned water was produced under the same conditions as in Example 1 except that a conventional apparatus without degassing devices shown in
As a result, the DO concentration in the conditioned water obtained was 16 μg/L, which was considerably higher than the DO concentration in ultrapure water.
Further, time-dependent changes in NH4OH concentration in the conditioned water obtained were as shown in
Although the present invention has been described in detail using specific embodiments, it will be apparent to those skilled in the art that various modifications are possible without departing from the spirit and scope of the invention.
This application is based on Japanese Patent Application No. 2017-068092 filed on Mar. 30, 2017, which is incorporated by reference in its entirety.
Number | Date | Country | Kind |
---|---|---|---|
JP2017-068092 | Mar 2017 | JP | national |
Filing Document | Filing Date | Country | Kind |
---|---|---|---|
PCT/JP2017/032800 | 9/12/2017 | WO | 00 |
Publishing Document | Publishing Date | Country | Kind |
---|---|---|---|
WO2018/179495 | 10/4/2018 | WO | A |
Number | Name | Date | Kind |
---|---|---|---|
6290777 | Imaoka | Sep 2001 | B1 |
6416586 | Ohmi | Jul 2002 | B1 |
7329312 | Morita et al. | Feb 2008 | B2 |
8999069 | Ida et al. | Apr 2015 | B2 |
10138149 | Yokoi et al. | Nov 2018 | B2 |
20030094610 | Aoki | May 2003 | A1 |
20030132104 | Yamashita | Jul 2003 | A1 |
20050093182 | Morita | May 2005 | A1 |
20080118418 | Morita | May 2008 | A1 |
20090127201 | Kobayashi | May 2009 | A1 |
20100044311 | Kobayashi | Feb 2010 | A1 |
20110024361 | Schwartzel | Feb 2011 | A1 |
20110042281 | Tokoshima | Feb 2011 | A1 |
20160233082 | Yano | Aug 2016 | A1 |
20170044029 | Nakano | Feb 2017 | A1 |
20170327396 | Ikuno | Nov 2017 | A1 |
20200017384 | Fujimura | Jan 2020 | A1 |
20200048116 | Gan | Feb 2020 | A1 |
Number | Date | Country |
---|---|---|
101031787 | Sep 2007 | CN |
102007579 | Apr 2011 | CN |
102784496 | Nov 2012 | CN |
105283422 | Jan 2016 | CN |
S58-58189 | Apr 1983 | JP |
H11-77023 | Mar 1999 | JP |
2000-084368 | Mar 2000 | JP |
2000-317211 | Nov 2000 | JP |
2003-334433 | Nov 2003 | JP |
2007-268397 | Oct 2007 | JP |
2016-139766 | Aug 2016 | JP |
Entry |
---|
PCT/ISA/210, “International Search Report for International Application No. PCT/JP2017/032800,” dated Dec. 5, 2017. |
Japan Patent Office, “Notice of Reasons for Refusal for Japanese Patent Application No. 2017-068092,” dated Dec. 5, 2017. |
China Patent Office, “Office Action for Chinese Patent Application No. 201780082241.7,” dated Aug. 4, 2021. |
Number | Date | Country | |
---|---|---|---|
20200317547 A1 | Oct 2020 | US |