Apparatuses and methods for in-memory data switching networks

Abstract

The present disclosure includes apparatuses and methods for in-memory data switching networks. An example apparatus includes an array of memory cells. Sensing circuitry is selectably coupled to the array of memory cells. An input/output (I/O) line is shared as a data path for in-memory data switching associated with the array. An in-memory data switching network is selectably coupled to the respective shared I/O line. A controller is configured to couple to the in-memory data switching network and direct enablement of a switch protocol.

Description

TECHNICAL FIELD

The present disclosure relates generally to semiconductor memory and methods, and more particularly, to apparatuses and methods for in-memory data switching networks.

BACKGROUND

Memory devices are typically provided as internal, semiconductor, integrated circuits in computers or other electronic systems. There are many different types of memory including volatile and non-volatile memory. Volatile memory can require power to maintain its data (e.g., host data, error data, etc.) and includes random access memory (RAM), dynamic random access memory (DRAM), static random access memory (SRAM), synchronous dynamic random access memory (SDRAM), and thyristor random access memory (TRAM), among others. Non-volatile memory can provide persistent data by retaining stored data when not powered and can include NAND flash memory, NOR flash memory, and resistance variable memory such as phase change random access memory (PCRAM), resistive random access memory (RRAM), and magnetoresistive random access memory (MRAM), such as spin torque transfer random access memory (STT RAM), among others.

Electronic systems often include a number of processing resources (e.g., one or more processors), which may retrieve and execute instructions and store the results of the executed instructions to a suitable location. A processor can comprise a number of functional units such as arithmetic logic unit (ALU) circuitry, floating point unit (FPU) circuitry, and a combinatorial logic block, for example, which can be used to execute instructions by performing an operation on data (e.g., one or more operands). As used herein, an operation can be, for example, a Boolean operation, such as AND, OR, NOT, NOT, NAND, NOR, and XOR, and/or other operations (e.g., invert, shift, arithmetic, statistics, among many other possible operations). For example, functional unit circuitry may be used to perform the arithmetic operations, such as addition, subtraction, multiplication, and division on operands, via a number of operations.

A number of components in an electronic system may be involved in providing instructions to the functional unit circuitry for execution. The instructions may be executed, for instance, by a processing resource such as a controller and/or host processor. Data (e.g., the operands on which the instructions will be executed) may be stored in a memory array that is accessible by the functional unit circuitry. The instructions and/or data may be retrieved from the memory array and sequenced and/or buffered before the functional unit circuitry begins to execute instructions on the data. Furthermore, as different types of operations may be performed in one or multiple clock cycles through the functional unit circuitry, intermediate results of the instructions and/or data may also be sequenced and/or buffered. A sequence to complete an operation in one or more clock cycles may be referred to as an operation cycle. Time consumed to complete an operation cycle costs in terms of processing and computing performance and power consumption, of a computing apparatus and/or system.

In many instances, the processing resources (e.g., processor and associated functional unit circuitry) may be external to the memory array, and data is accessed via a bus between the processing resources and the memory array to execute a set of instructions. Processing performance may be improved in a processing-in-memory (PIM) device, in which a processing and/or logic resource may be implemented internally and/or near to a memory (e.g., directly on a same chip as the memory array). A processing-in-memory (PIM) device may save time by reducing and eliminating external communications and may also conserve power.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a block diagram of an apparatus in the form of a computing system including a memory device in accordance with a number of embodiments of the present disclosure.

FIGS. 1B and 1C are block diagrams of bank sections of a memory device in accordance with a number of embodiments of the present disclosure.

FIGS. 1D and 1E are block diagrams of banks of a memory device corresponding to FIGS. 1B and 1C, respectively, in accordance with a number of embodiments of the present disclosure.

FIG. 1F is another block diagram of a memory device having a shared input/out (I/O) line in a data path local to bank sections of an array in accordance with a number of embodiments of the present disclosure.

FIG. 2 is a schematic diagram illustrating circuitry of a memory device, the circuitry including a sense amplifier and a compute component, which may be included in sensing circuitry and/or logic stripes, in accordance with a number of embodiments of the present disclosure.

FIG. 3 is a schematic diagram illustrating circuitry for a plurality of shared I/O lines in a data path of an array associated with an in-memory data switching network in accordance with a number of embodiments of the present disclosure.

FIG. 4 is a block diagram illustrating a plurality of sections of an array coupled to a compute unit, having a plurality of logic stripes configured as an in-memory data switching network, by a plurality of shared I/O lines in accordance with a number of embodiments of the present disclosure.

FIG. 5 is a block diagram illustrating an example of a controller of a memory device in accordance with a number of embodiments of the present disclosure.

FIG. 6 is a block diagram illustrating another example of a controller of a memory device, the controller to control operation and selection of data switch protocols in accordance with a number of embodiments of the present disclosure.

FIG. 7 is a schematic diagram illustrating circuitry for performance of logical operations in accordance with a number of embodiments of the present disclosure.

FIG. 8 is a logic table illustrating selectable logic operation results implemented by the circuitry shown in FIG. 7 in accordance with a number of embodiments of the present disclosure.

FIGS. 9A and 9B are schematic diagrams illustrating in-memory data switching networks in accordance with a number of embodiments of the present disclosure.

DETAILED DESCRIPTION

The present disclosure includes apparatuses and methods for in-memory data switching networks. In at least one embodiment, an apparatus includes an array of memory cells and sensing circuitry selectably coupled to the array of memory cells. An input/output (I/O) line is shared as a data path for in-memory data switching associated with the array. An in-memory data switching network is selectably coupled to the respective shared I/O line. For example, the sensing circuitry may be selectably coupled to columns of memory cells and the shared I/O lines and the memory data switching network may also be selectably coupled to the shared I/O lines. A controller is configured to couple to the in-memory data switching network and direct enablement of a switch protocol.

An in-memory data switching network, as described herein, is intended to mean circuitry (e.g., in a fixed configuration and/or as selected from a plurality of alternative programmable configurations) used to restructure and/or reorganize (e.g., to swizzle) data values in order to switch a position of at least one data value (e.g., all data values) in a sequence (e.g., plurality) of data values. To swizzle data values from their previous positions in the sequence as described herein may provide a number of advantages. Performance of various operations may rely on and/or may be improved by swizzing the data values relative to their original sequence. Such operations may, for example, include fast Fourier transforms, scatter gather functions, sorting functions, switching endianness (e.g., most significant bit to least significant bit) of data in the sequence, to pack bytes into vectors (e.g., packing vectors for imaging), to shift and/or to move bytes and/or bits in the sequence from one position to another position, among other possible operations in which data switching may be useful.

Ordinal numbers such as first and second are used herein to assist in correlating and/or distinguishing between similar and/or selectably coupled components (e.g., subarrays of memory cells and associated sensing circuitry, data values and associated compute components, subrows of memory cells and associated compute components, logic stripes and associated compute components, connection circuitry and associated compute components and/or logic stripes, etc.). The ordinal numbers are not used to indicate a particular ordering and/or relationship between the components, unless the context clearly dictates otherwise (e.g., by using terms such as adjacent, etc.).

A shared I/O line (e.g., as shown at 155 and described in connection with FIGS. 1D-1F and elsewhere herein) serves as a data path associated with the memory array (e.g., as shown at 130 and described in connection with FIG. 1A and elsewhere herein) for data movement. The shared I/O line may, in some embodiments, couple sensing circuitry (e.g., as shown at 150 and described in connection with FIG. 1A and elsewhere herein) and/or a sense amplifier and/or compute component therein (e.g., as shown at 206 and 231, respectively, and described in connection with FIG. 2 and elsewhere herein) to an in-memory data switching network (e.g., as shown at 172 and 372 and described in connection with FIG. 1A and FIG. 3 and elsewhere herein). The shared I/O line may, in some embodiments, couple a compute component in a logic stripe (e.g., as shown at 431 and 409 and described in connection with FIG. 4 and elsewhere herein) to the sensing circuitry and/or to the in-memory data switching network in the data path of the shared I/O line. The compute component of the logic stripe, associated with the data path of the shared I/O line, has a pitch equal to that of the data path and that is a function of a pitch of digit lines (e.g., as shown at 205 and described in connection with FIG. 2 and elsewhere herein) to the array of memory cells. For example, the compute component of the logic stripe has a pitch that is an integer multiple of the pitch of digit lines to the array of memory cells.

As used herein, a “shared I/O line” is intended to a mean an I/O line that is local to the array in a data path that has a pitch which is a function of a pitch of the array of memory cells. The shared I/O may be located on a bank (e.g., as shown at 121 and described in connection with FIGS. 1D-1F and elsewhere herein) of the array of memory and may be multiplexed to a plurality of columns of the array (e.g., complementary digit/sense lines to a DRAM array) and/or sensing circuitry coupled to the columns. As described herein, the shared I/O line may be selectably coupled (e.g., as controlled and/or directed by controller 140) to a plurality of subarrays of the array (e.g., as shown at 125 and/or 126 and described in connection with FIGS. 1B and 1C and elsewhere herein), a compute unit (e.g., as shown at 460 and described in connection with FIG. 4 and elsewhere herein), and/or the in-memory data switching network described herein. Because the singular forms “a”, “an”, and “the” can include both singular and plural referents herein, “a shared I/O line” can be used to refer to “a pair of complementary shared I/O lines”, unless the context clearly dictates otherwise. Moreover, “a shared I/O line” or “shared I/O lines” may be used as an abbreviation of “a plurality of shared I/O lines”. The shared I/O is different and distinct from the I/O circuity associated with the array that is intended to move data to and from the array according to an array protocol such as DDR4 and/or to move data onto and off of a memory device (e.g., as shown at 120 and described in connection with FIG. 1A and elsewhere herein) in connection with a host (e.g., as shown at 110 and described in connection with FIG. 1A and elsewhere herein).

As used herein, data movement is an inclusive term that includes, for instance, copying, transferring, and/or transporting data values from a source location to a destination location. Data may, for example, be moved from a sense amplifier of sensing circuitry of a subarray to a compute component in a logic stripe in a data path of a shared I/O line local to the array. Copying the data values may indicate that the data values stored (cached) in the sense amplifiers are copied and moved to a compute component in a logic stripe in the data path of the shared I/O line local to the array and that the original data values stored in the subrow of the row may remain unchanged. Transferring the data values may indicate that the data values stored (cached) in the sense amplifiers are copied and moved to a compute component in a logic stripe in the data path of the shared I/O line local to the array and that at least one of the original data values stored in the subrow of the row may be changed (e.g., by being erased and/or by a subsequent write operation, as described herein). Transporting the data values may be used to indicate the process by which the copied and/or transferred data values are moved (e.g., by the data values being placed on the shared I/O line from the source location and transported to the destination location).

As described in more detail below, the embodiments may allow a host system to allocate a number of locations (e.g., arrays, subarrays and/or portions of subarrays, such as row and subrows thereof) in one or more DRAM banks to hold (e.g., store) and/or process data. A host system and a controller may perform the address resolution on an entire block of program instructions (e.g., PIM command instructions) and data and direct (e.g., control) allocation, storage, and/or movement (e.g., flow) of data and commands into allocated locations (e.g., subarrays and portions of subarrays) within a destination (e.g., target) bank. Writing and/or reading data and/or executing commands in the DRAM array (e.g., movement of data values for performing operations by a logic stripe, as described herein) may utilize a normal DRAM read/write path to the DRAM device. As the reader will appreciate, while a DRAM-style memory array for a PIM device is discussed with regard to examples of in data path compute operations presented herein, embodiments are not limited to a PIM DRAM implementation.

The memory devices described herein may use a number of controllers for a bank of subarrays, controllers for individual subarrays, and/or controllers for latch components (e.g., each controller being a sequencer, a state machine, a microcontroller, a sub-processor, ALU circuitry, or some other type of controller) to execute a set of instructions to perform an operation on data (e.g., one or more operands). As used herein, an operation may be, for example, a Boolean logical operation, such as AND, OR, NOT, NOT, NAND, NOR, and XOR, and/or other operations (e.g., invert, shift, arithmetic, statistics, among many other possible operations). For example, functional unit circuitry may be used to perform the arithmetic operations, such as addition, subtraction, multiplication, and division on operands, via a number of logical operations.

In the following detailed description of the present disclosure, reference is made to the accompanying drawings that form a part hereof, and in which is shown by way of illustration how one or more embodiments of the disclosure may be practiced. These embodiments are described in sufficient detail to enable those of ordinary skill in the art to practice the embodiments of this disclosure, and it is to be understood that other embodiments may be utilized and that process, electrical, and structural changes may be made without departing from the scope of the present disclosure.

As used herein, designators such as “X”, “Y”, “Z”, “N”, “M”, etc., particularly with respect to reference numerals in the drawings, indicate that a number of the particular feature so designated may be included. It is also to be understood that the terminology used herein is for the purpose of describing particular embodiments only, and is not intended to be limiting. As used herein, the singular forms “a”, “an”, and “the” can include both singular and plural referents, unless the context clearly dictates otherwise. In addition, “a number of”, “at least one”, and “one or more” (e.g., a number of memory arrays) can refer to one or more memory arrays, whereas a “plurality of” is intended to refer to more than one of such things. Furthermore, the words “can” and “may” are used throughout this application in a permissive sense (i.e., having the potential to and/or being able to in at least some embodiments described herein), not in a mandatory sense (i.e., must). The term “include,” and derivations thereof, means “including, but not limited to”. The terms “couple”, “coupled”, and “coupling” mean to be directly or indirectly connected physically or for access to and movement (transmission) of commands and/or data, as appropriate to the context. The terms “data” and “data values” are used interchangeably herein and can have the same meaning, as appropriate to the context.

The figures herein follow a numbering convention in which the first digit or digits correspond to the figure number and the remaining digits identify an element or component in the figure. Similar elements or components between different figures may be identified by the use of similar digits. For example, 108 may reference element “08” in FIG. 1A, and a similar element may be referenced as 208 in FIG. 2. As will be appreciated, elements shown in the various embodiments herein can be added, exchanged, and/or eliminated so as to provide a number of additional embodiments of the present disclosure. In addition, the proportion and/or the relative scale of the elements provided in the figures are intended to illustrate certain embodiments of the present disclosure and should not be taken in a limiting sense.

FIG. 1A is a block diagram of an apparatus in the form of a computing system 100 including a memory device 120 which includes a memory array 130 in accordance with a number of embodiments of the present disclosure. As used herein, a memory device 120, controller 140, switching component 171, memory array 130, sensing circuitry 150, and/or an in-memory data switching network 172 might also be separately considered an “apparatus.”

As used herein, in some embodiments, additional “latches” may be intended to mean additional functionalities (e.g., amplifiers, memory cells, select logic) that sense, couple, store, and/or move (e.g., read, store, cache) data values of memory cells in an array and that are distinct from latches (e.g., as shown at 706 and described in connection with FIG. 7 and elsewhere herein) associated with the plurality of compute components 431-1, . . . , 431-Z and/or logic stripes 409-1, . . . , 409-N in a compute unit 460 in a data path of the plurality of shared I/O lines 455 shown in FIGS. 3-4 and 6-7. For example, in some embodiments, latches may be associated with a switch node (e.g., latch 970 of switch node 966 shown in and described in connection with FIG. 9A and elsewhere herein). The logic stripes (e.g., as shown at 109-0, . . . , 109-N−1 and described in connection with FIG. 1F and elsewhere herein) in a data path of a plurality of shared I/O lines 155 local to the array may be associated with various bank sections 123-1, . . . , 123-N of memory cells in the bank 121-1. The bank 121-1 may be one of a plurality of banks on the memory device 120.

System 100 in FIG. 1A includes a host 110 coupled (e.g., connected) to the memory device 120. Host 110 may be a host system such as a personal laptop computer, a desktop computer, a digital camera, a smart phone, or a memory card reader, among various other types of hosts. Host 110 may include a system motherboard and/or backplane and may include a number of processing resources (e.g., one or more processors, microprocessors, or some other type of controlling circuitry). The system 100 may include separate integrated circuits or both the host 110 and the memory device 120 may be on the same integrated circuit. The system 100 may be, for instance, a server system and/or a high performance computing (HPC) system and/or a portion thereof. Although the examples shown in FIG. 1A illustrates a system having a Von Neumann architecture, embodiments of the present disclosure may be implemented in non-Von Neumann architectures, which may not include one or more components (e.g., CPU, ALU, etc.) often associated with a Von Neumann architecture.

For clarity, the system 100 has been simplified to focus on features with particular relevance to the present disclosure. The memory array 130 may be a DRAM array, SRAM array, STT RAM array, PCRAM array, TRAM array, RRAM array, NAND flash array, and/or NOR flash array, among other types of arrays. The array 130 may include memory cells arranged in rows coupled by access lines (which may be referred to herein as word lines or select lines) and columns coupled by sense lines (which may be referred to herein as data lines or digit lines). Although a single array 130 is shown in FIG. 1A, embodiments are not so limited. For instance, memory device 120 may include a number of arrays 130 (e.g., a number of banks of DRAM cells, NAND flash cells, etc.).

The memory device 120 may include address circuitry 142 to latch address signals provided over a data bus 156 (e.g., an I/O bus connected to the host 110) by I/O circuitry 144 (e.g., provided to external ALU circuitry and/or to DRAM DQs via local I/O lines and global I/O lines). As used herein, DRAM DQs may enable input of data to and/or output of data from a bank (e.g., from and/or to the controller 140 and/or host 110) via a bus (e.g., data bus 156). During a write operation, a voltage (high=1, low=0) may be applied to a DQ (e.g., a pin). This voltage may be translated into an appropriate signal and stored by a selected memory cell. During a read operation, a data value read from a selected memory cell may appear at the DQ once access is complete and the output is enabled (e.g., by the output enable signal being low). At other times, DQs may be in a high impedance state, such that the DQs do not source or sink current and do not present a signal to the system. This also may reduce DQ contention when two or more devices (e.g., banks) share a combined data bus, as described herein. Such DQs are separate and distinct from the plurality of shared I/O lines 155 (in FIGS. 1B and 1C) in a data path local to the array 130.

Status and exception information may be provided from the controller 140 of the memory device 120 to a channel controller 143, for example, through an out-of-band (OOB) bus 157 (e.g., high-speed interface (HSI)), which in turn may be provided from the channel controller 143 to the host 110. The channel controller 143 may include a logic component to allocate a plurality of locations (e.g., controllers for subarrays) in the arrays of each respective bank to store bank commands, application instructions (e.g., for sequences of operations), and arguments (PIM commands) for various banks associated with operations for each of a plurality of memory devices 120. The channel controller 143 may dispatch commands (e.g., PIM commands) to the plurality of memory devices 120 to store those program instructions within a given bank 121 (e.g., banks 121 and 121-1 of FIGS. 1D-1F) of a memory device 120.

Address signals are received through address circuitry 142 and decoded by a row decoder 146 and a column decoder 152 to access the memory array 130. Data may be sensed (read) from memory array 130 by sensing voltage and/or current changes on sense lines (digit lines) using a number of sense amplifiers, as described herein, of the sensing circuitry 150. A sense amplifier may read and latch a page (e.g., a row) of data from the memory array 130. Additional compute circuitry, as described herein, may be coupled to the sensing circuitry 150 and may be used in combination with the sense amplifiers to sense, store (e.g., cache and/or buffer), perform compute functions (e.g., operations), and/or move data. The I/O circuitry 144 may be used for bi-directional data communication with host 110 over the data bus 156 (e.g., a 64 bit wide data bus). The write circuitry 148 may be used to write data to the memory array 130.

Controller 140 (e.g., bank control logic, sequencer and timing circuitry shown in FIG. 5) may decode signals (e.g., commands) provided by control bus 154 from the host 110. These signals may include chip enable signals, write enable signals, and/or address latch signals that may be used to control operations performed on the memory array 130, including data sense, data store, data switch, data movement (e.g., copying, transferring, and/or transporting data values), data write, and/or data erase operations, among other operations. In various embodiments, the controller 140 may be responsible for executing instructions from the host 110 and/or accessing the memory array 130. The controller 140 may be a state machine, a sequencer, or some other type of controller. The controller 140 may control shifting data (e.g., right or left) in a row of an array (e.g., memory array 130), may enable and/or select between a number of stored switch protocols (e.g., using signals sent to an in-memory data switching network), and/or may execute microcode instructions to perform operations such as compute operations (e.g., AND, OR, NOR, XOR, add, subtract, multiply, divide, etc.), among other functionalities.

Examples of the sensing circuitry 150 are described further below (e.g., in FIGS. 2 and 3). For instance, in some embodiments, the sensing circuitry 150 may include a number of sense amplifiers. In some embodiments, the sensing circuitry 150 may include the number of sense amplifiers and a corresponding number of compute components, which may serve as an accumulator and may be used to perform operations in each subarray (e.g., on data associated with complementary sense lines), in addition to the in data path compute operations described herein.

In some embodiments, the sensing circuitry 150 may be used to perform operations using data stored by memory array 130 as inputs and participate in movement of the data for copy, transfer, transport, writing, logic, and/or storage operations to a different location in the memory array 130 and/or in logic stripes 109 without transferring the data via a sense line address access (e.g., without firing a column decode signal). As such, in some embodiments, various compute functions may be performed using, and within, sensing circuitry 150 rather than (or in association with) being performed by processing resources external to the sensing circuitry 150 (e.g., by a processor associated with host 110 and/or other processing circuitry, such as ALU circuitry, located on device 120, such as on controller 140 or elsewhere). However, in addition, embodiments described herein may perform in data path compute functions and/or operations on data values moved to a plurality of compute components 431-1, . . . , 431-Z and/or logic stripes 109-0, . . . , 109-N−1 in a compute unit from the rows of the array. As an example, according to some embodiments, compute operations may be controlled in the compute unit at speeds of 2 ns without having to move the data values back into the rows, as compared to an example time required to fire the rows in the array of 60 ns.

In various previous approaches, data associated with an operand, for instance, would be read from memory via sensing circuitry and provided to external ALU circuitry via I/O lines (e.g., via local I/O lines and/or global I/O lines). The external ALU circuitry could include a number of registers and would perform compute functions using the operands, and the result would be transferred back to the array via the I/O circuitry 144.

In contrast, embodiments herein perform compute functions on data values, moved to a plurality of compute components 431-1, . . . , 431-Z and/or logic stripes 109-0, . . . , 109-N−1 via a plurality of shared I/O lines 155 from the rows and/or subrows of the array, in a compute unit in a data path local to the array. Additionally, sensing circuitry 150 may be configured to perform operations on data stored by memory array 130 and store the result back to the memory array 130 without enabling an I/O line (e.g., a local I/O line) coupled to the sensing circuitry 150. However, once loaded, compute operations may be controlled in the compute unit much faster (e.g., at speeds of 2 ns) without having to move the data values back into the rows and/or subrows, as compared to an example time required to fire the rows in the array (e.g., 60 ns). The sensing circuitry 150 may be formed on pitch with the memory cells of the array. The plurality of compute components 431-1, . . . , 431-Z and/or logic stripes 109-0, . . . , 109-N−1, associated with the data path of the plurality of shared I/O lines 155, may have a pitch equal to that of the data path and that is a function of a pitch of digit lines to the array of memory cells

For example, the sensing circuitry 150 described herein may be formed on a same pitch as a pair of complementary sense lines (e.g., digit lines). As an example, a pair of complementary memory cells may have a cell size with a 6F² pitch (e.g., 3F×2F), where F is a feature size. If the pitch of a pair of complementary sense lines for the complementary memory cells is 3F, then the sensing circuitry being on pitch indicates the sensing circuitry (e.g., a sense amplifier and/or a corresponding compute component per respective pair of complementary sense lines) is formed to fit within the 3F pitch of the complementary sense lines. Likewise, the compute components 431-1, . . . , 431-Z of the logic stripes 109-0, . . . , 109-N−1, associated with the data path of the plurality of shared I/O lines 155, have a pitch that is a function of the 3F pitch of the complementary sense lines. For example, the compute components 431-1, . . . , 431-Z of logic stripes 109-0, . . . , 109-N−1 may have a pitch that is an integer multiple of the 3F pitch of digit lines to the array of memory cells, which also may correspond to a pitch of the plurality of shared I/O lines 155.

By contrast, the circuitry of the processing resource(s) (e.g., a compute engine, such as an ALU) of various prior systems may not conform to pitch rules associated with a memory array. For example, the memory cells of a memory array may have a 4F² or 6F² cell size. As such, the devices (e.g., logic gates) associated with ALU circuitry of previous systems may not be capable of being formed on pitch with the memory cells (e.g., on a same pitch as the sense lines), which may affect chip size and/or memory density, for example. In the context of some computing systems and subsystems (e.g., a central processing unit (CPU)), data may be processed in a location that is not on pitch and/or on chip with memory (e.g., memory cells in the array), as described herein. For example, the data may be processed by a processing resource associated with a host, for instance, rather than on pitch with the memory.

As such, in a number of embodiments, circuitry external to array 130 and sensing circuitry 150 is not needed to perform compute functions as the sensing circuitry 150 may perform the appropriate operations to perform such compute functions or may perform such operations in a data path of a plurality of shared I/O lines local to the array without the use of an external processing resource. Therefore, the sensing circuitry 150 and/or the plurality of compute components 431-1, . . . , 431-Z and/or logic stripes 109-0, . . . , 109-N−1 in a compute unit in a data path of the plurality of shared I/O lines 155 may be used to complement or to replace, at least to some extent, such an external processing resource (or at least the bandwidth consumption of such an external processing resource). In some embodiments, the sensing circuitry 150 and/or the plurality of compute components 431-1, . . . , 431-Z and/or logic stripes 109-0, . . . , 109-N−1 in a compute unit in a data path of the plurality of shared I/O lines 155 may be used to perform operations (e.g., to execute instructions) in addition to operations performed by an external processing resource (e.g., host 110). For instance, host 110 and/or sensing circuitry 150 may be limited to performing only certain operations and/or a certain number of operations.

Operations described herein may include operations associated with a PIM capable device. PIM capable device operations may use bit vector based operations. As used herein, the term “bit vector” is intended to mean a number of bits on a bit vector memory device (e.g., a PIM device) stored physically contiguously or non-contiguously in a row of an array of memory cells. Thus, as used herein a “bit vector operation” is intended to mean an operation that is performed on a bit vector that is a contiguous or non-contiguous portion of virtual address space (e.g., used by a PIM device). For example, a row of virtual address space in the PIM device may have a bit length of 16K bits (e.g., corresponding to 16K complementary pairs of memory cells in a DRAM configuration). Sensing circuitry 150, as described herein, for such a 16K bit row may include a corresponding 16K sense amplifiers 206 and/or processing elements (e.g., compute components 231) formed on pitch with the sense lines selectably coupled to corresponding memory cells in the 16 bit row. A compute component in the sensing circuitry and/or logic stripe of the PIM device may operate as a one bit processing element (PE) on a single bit of the bit vector of the row or subrow of memory cells sensed by the sensing circuitry 150 (e.g., sensed by and/or stored by a sense amplifier, as described herein). Similarly, the plurality of compute components 431-1, . . . , 431-Z of logic stripes 109-0, . . . , 109-N−1 in a compute unit in a data path of the plurality of shared I/O lines 155 may each operate as a one bit PE on a single bit of the bit vector of the row and/or subrow of memory cells sensed in an array.

Enabling an I/O line may include enabling (e.g., turning on, activating) a transistor having a gate coupled to a decode signal (e.g., a column decode signal) and a source/drain coupled to the I/O line. However, embodiments are not limited to not enabling an I/O line. For instance, in a number of embodiments, the sensing circuitry (e.g., 150) may be used to perform operations without enabling column decode lines of the array.

However, the plurality of shared I/O lines 155 may be enabled in order to load data values to the plurality of compute components 431-1, . . . , 431-Z and/or logic stripes 109-0, . . . , 109-N−1 in a compute unit in a data path of the plurality of shared I/O lines 155 where compute operations may be controlled much faster. For example, in the plurality of compute components 431-1, . . . , 431-Z and/or logic stripes 109-0, . . . , 109-N−1 in the compute unit, the compute operation may be performed at speeds of 2 ns. This enhancement of speed may be attributed to not having to move the data values back into the rows and/or subrows with the associated time used in firing the rows in the array (e.g., 60 ns).

Alternatively or in addition, the plurality of shared I/O lines 155 may be enabled in order to load data values to an in-memory data switching network 172. Various embodiments of the data switching network are described herein. In some embodiments, the data switching network (e.g., as shown at 372 and described in association with FIG. 3) may be positioned (e.g., physically) on chip with an array of memory cells (e.g., including subarrays as shown at 125 and/or 126 and described in connection with FIGS. 1B and 1C and elsewhere herein) to which the data switching network may be selectably coupled by the shared I/O lines. As described herein, being on chip with something else is intended to mean being formed on the same chip as the memory cells in the corresponding subarrays. As such, in various embodiments, the data switching network may be formed adjacent to the array and/or associated with, or part of the controller 140 of the array. In some embodiments, the data switching network (e.g., as shown at 472 and described in association with FIG. 4) may be formed on pitch and/or on chip with the array (e.g., subarrays 425-1, . . . , 425-32) and may be part of the compute unit 460 (e.g., levels of the data switching network may correspond to some or all of the logic stripes 409-1 . . . . 409-N of the compute unit 460).

FIGS. 1B and 1C are block diagrams of bank sections of a memory device in accordance with a number of embodiments of the present disclosure. FIG. 1B is a block diagram of a bank section 123 to a memory device. For example, bank section 123 may represent an example section of a number of bank sections to a bank of a memory device (e.g., bank section 0, bank section 1, . . . , bank section M). As shown in FIG. 1B, a bank architecture may include a plurality of memory columns 122 shown horizontally as X (e.g., 16,384 columns in an example DRAM bank and bank section). Additionally, the bank section 123 may be divided into subarray 0, subarray 1, . . . , and subarray N−1 (e.g., 128 subarrays) shown at 125-0, 125-1, . . . , 125-N−1, respectively, that are separated by amplification regions configured to be coupled to a data path (e.g., the shared I/O line described herein). As such, the subarrays 125-0, 125-1, . . . , 125-N−1 may each have amplification regions shown 124-0, 124-1, . . . , 124-N−1 that correspond to sensing component stripe 0, sensing component stripe 1, . . . , and sensing component stripe N−1, respectively.

Each column 122 is configured to be coupled to sensing circuitry 150, as described in connection with FIG. 1A and elsewhere herein. As such, each column in a subarray may be coupled individually to a sense amplifier and compute component that contribute to a sensing component stripe for that subarray. For example, as shown in FIG. 1B, the bank architecture may include sensing component stripe 0, sensing component stripe 1, . . . , sensing component stripe N−1 that each have sensing circuitry 150 with sense amplifiers and compute components that may, in various embodiments, be used as registers, cache and data buffering and that are coupled to each column 122 in the subarrays 125-0, 125-1, . . . , 125-N−1.

Each of the of the subarrays 125-0, 125-1, . . . , 125-N−1 may include a plurality of rows 119 shown vertically as Y (e.g., each subarray may include 512 rows in an example DRAM bank). In some embodiments, the number of rows in one or more of the subarrays (e.g., all of the subarrays) may be substantially equal (e.g., all having 128, 256, 512 rows, among other possibilities). For example, each subarray of the plurality of subarrays may include a number of memory cells in a column that is substantially equal to a number of memory cells in a column of an adjacent subarray (e.g., all having 128, 256, 512 memory cells, among other possibilities) and/or a sense line of each subarray may have a length that is substantially equal to a length of a sense line of the column of the adjacent subarray (e.g., all subarrays in the array). Embodiments are not limited to the example horizontal and vertical orientation of columns and rows described herein or the example numbers thereof.

As shown in FIG. 1B, the bank architecture may be associated with controller 140. The controller 140 shown in FIG. 1B may, in various examples, represent at least a portion of the functionality embodied by and contained in the controller 140 shown in FIG. 1A. As described in connection with FIG. 1A and elsewhere herein, the controller may include the switching component 171 for control of the in-memory data switching network 172. Among other functionalities described herein, the controller 140 may direct (e.g., control) input of control signals based on commands and data 141 to the bank architecture and output of data from the bank architecture (e.g., to the host 110) along with control of data movement in the bank architecture, as described herein. The bank architecture may include a data bus 156 (e.g., a 64 bit wide data bus) to DRAM DQs, which may correspond to the data bus 156 described in connection with FIG. 1A.

FIG. 1C is a block diagram of a bank section 123 of a memory device in accordance with a number of embodiments of the present disclosure. Bank section 123 may represent an example section of a number of bank sections of a bank of a memory device (e.g., bank section 0, bank section 1, . . . , bank section M). As shown in FIG. 1C, a bank section 123 may include a plurality of memory columns 122 shown horizontally as X (e.g., 16,384 columns in an example DRAM bank and bank section). Additionally, the bank section 123 may be divided into subarray 0, subarray 1, . . . , and subarray N−1 (e.g., 32, 64, 128, or various uneven numbers of subarrays) as shown at 125-0 and 125-1 as examples of two short digit line (e.g., cache) subarrays and at 126-0, . . . , 126-N−1 as examples of a number of long digit line (e.g., storage) subarrays in the same bank section. The configurations of embodiments (e.g., the numbers and/or positioning of the short and long digit line subarrays) illustrated in FIG. 1C are shown for purposes of clarity and are not limited to these configurations.

The short and long digit line subarrays are respectively separated by amplification regions configured to be coupled to a data path (e.g., the shared I/O line described herein). As such, the short digit line subarrays 125-0 and 125-1 and the long digit line subarrays 126-0, . . . , 126-N−1 may each have amplification regions 124-0, 124-1, . . . , 124-N−1 that correspond to sensing component stripe 0, sensing component stripe 1, . . . , and sensing component stripe N−1, respectively.

Each column 122 may be configured to be coupled to sensing circuitry 150, as described in connection with FIG. 1A and elsewhere herein. As such, each column in a subarray may be coupled individually to at least one of a sense amplifier and/or a compute component that contributes to a sensing component stripe for that subarray. For example, as shown in FIG. 1C, the bank section 123 may include sensing component stripe 0, sensing component stripe 1, . . . , sensing component stripe N−1 that each have sensing circuitry 150 with at least sense amplifiers that may, in various embodiments, be used as registers, cache, and/or data buffering, etc., and that are coupled to each column 122 in the subarrays 125-0 and 125-1 and 126-0, . . . , 126-N−1.

In some embodiments, a compute component may be coupled to each sense amplifier within the sensing circuitry 150 in each respective sensing component stripe coupled to a short digit line subarray (e.g., in sensing component stripes 124-0 and 124-1 coupled respectively to the short digit line subarrays 125-0 and 125-1). However, embodiments are not so limited. For example, in some embodiments, there may not be a 1:1 correlation between the number of sense amplifiers and compute components (e.g., there may be more than one sense amplifier per compute component or more than one compute component per sense amplifier, which may vary between subarrays, partitions, banks, etc).

Each of the of the short digit line subarrays 125-0 and 125-1 may include a plurality of rows 119 shown vertically as Y (e.g., each subarray may include 512 rows in an example DRAM bank). Each of the of the long digit line subarrays 126-0, . . . , 126-N−1 may include a plurality of rows 118 shown vertically as Z (e.g., each subarray may include 1024 rows in an example DRAM bank). As such, in various embodiments, the number of rows in one or more of the subarrays (e.g., all of the subarrays) may vary from the number of rows in other subarrays. For example, a number of memory cells in a column of a subarray of the first subset (e.g., a short digit line subarray) may, in some embodiments, be at most half of a number of memory cells in a column of a subarray of the second subset (e.g., a long digit line subarray) and/or a digit line (sense line) of a subarray of the first subset may have a length that is at most half of a length of a digit line of the subarray of the second subset. Embodiments are not limited to the example horizontal and vertical orientation of columns and rows described herein or the example numbers thereof.

Implementations of PIM DRAM architecture may perform processing at the sense amplifier and compute component level (e.g., in a sensing component stripe). Implementations of PIM DRAM architecture may allow a finite number of memory cells to be connected to each sense amplifier (e.g., around 1K or 1024memory cells). A sensing component stripe may include from around 8K to around 16K sense amplifiers. For example, a sensing component stripe for a long digit line subarray may include 16K sense amplifiers and may be configured to couple to an array of 1K rows and around 16K columns with a memory cell at each intersection of the rows and columns so as to yield 1K (1024) memory cells per column. By comparison, a sensing component stripe for a short digit line subarray may include 16K sense amplifiers and compute components and may be configured to couple to an array of, for example, at most half of the 1K rows of the long digit line subarray so as to yield 512 memory cells per column. In some embodiments, the number of sense amplifiers and/or compute components in respective sensing component stripes (e.g., corresponding to a number of memory cells in a row) may vary between at least some of the short digit line subarrays in comparison to the long digit line subarrays.

The numbers of rows, columns, and memory cells per column and/or the ratio of the numbers of memory cells between columns in the long and short digit line subarrays just presented are provided by way of example and not by way of limitation. For example, the long digit line subarrays may have columns that each have a respective 1024 memory cells and the short digit line subarrays may have columns that each have either a respective 512, 256, or 128 memory cells, among other possible numbers that are less than 512. The long digit line subarrays may, in various embodiments, have less than or more than 1024 memory cells per column, with the number of memory cells per column in the short digit line subarrays configured as just described. Alternatively or in addition, cache subarrays may be formed with a digit line length less than, equal to, or greater than the digit line length of the long digit line subarrays (storage subarrays) such that the cache subarrays are not the short digit line subarrays just described. For example, the configuration of the digit lines and/or the memory cells of the cache subarrays may provide faster computation than the configuration of the storage subarrays (e.g., 2T2C instead of 1T1C, SRAM instead of DRAM, etc).

Accordingly, the number of rows of memory cells in a cache subarray and/or the corresponding number of memory cells per digit line may be less than, equal to, or greater than the number of rows of memory cells in a storage subarray and/or the corresponding number of memory cells per digit line of the storage subarrays. In some embodiments, a number of memory cells in a row of a long digit line subarray may differ from a number of memory cells in a row of a short digit line subarray. For example, a memory cell of a short digit line subarray configured as 2T2C may be approximately twice as wide as a memory cell of a long digit line subarray configured as 1T1C because the 2T2C memory cell has two transistors and two capacitors whereas the 1T1C memory cell has one transistor and one capacitor. In order to integrate widths of these two configurations of subarrays on a chip and/or bank architecture, the number of memory cells in the rows may be adjusted (e.g., such that a short digit line subarray may, for example, have around half as many memory cells as in a row of a long digit line subarray). A controller may have or be directed by instructions to accommodate movement of data values between these two configurations of subarrays.

In some embodiments, long digit line subarray 126-N−1 may be subarray 32 in 128 subarrays and may be a last subarray in a first direction in a first partition of four partitions of subarrays, as described herein. Isolation stripes (not shown) may include a number of isolation transistors configured to selectably (e.g., as directed by controller 140) connect and disconnect portions of a selected shared I/O line. Selectably enabling (e.g., activating and inactivating) the isolation transistors connects and disconnects movement between partitions via the shared I/O line of data values to and from the sense amplifiers and/or compute components (e.g., in sensing component stripes, as described herein).

As such, the plurality of subarrays 125-0 and 125-1 and 126-0, . . . , 126-N−1, the plurality of sensing component stripes 124-0, 124-1, . . . , 124-N−1, and the isolation stripe may be considered as a single partition 128. In some embodiments, however, depending upon the direction of the data movement, a single isolation stripe may be shared by two adjacent partitions.

As shown in FIG. 1C, the bank section 123 may be associated with controller 140. The controller 140 shown in FIG. 1C may, in various embodiments, represent at least a portion of the functionality embodied by and contained in the controller 140 shown in FIGS. 1A and 1B. The controller 140 may direct (e.g., control) input of commands and/or data 141 to the bank section 123 and output of data from the bank section 123 (e.g., to the host 110) along with control of data movements in the bank section 123, as described herein. The bank section 123 may include a data bus 156 (e.g., a 64 bit wide data bus) to DRAM DQs, which may correspond to the data bus 156 described in connection with FIGS. 1A and 1B. The controller 140 (e.g., in response to a command) may be delegated responsibility for directing the movement and/or operations performed on the data values in the in-memory operations described herein (e.g., control of the data switching network 172 via the switch component 171).

FIGS. 1D and 1E are block diagrams of banks of a memory device corresponding to FIGS. 1B and 1C, respectively, in accordance with a number of embodiments of the present disclosure. FIG. 1D is a block diagram of a bank 121 to a memory device in accordance with a number of embodiments of the present disclosure. For example, bank 121 may represent an example bank to a memory device (e.g., bank 0, bank 1, . . . , bank M). As shown in FIG. 1D, a bank architecture may include an address/control (A/C) path 153 (e.g., a bus) coupled a controller 140. Again, the controller 140 shown in FIG. 1D may, in various examples, represent at least a portion of the functionality embodied by and contained in the controller 140 shown in FIGS. 1A-1C.

As shown in FIG. 1D, a bank architecture may include a plurality of bank sections (e.g., bank section 123) in a particular bank 121. As further shown in FIG. 1D, a bank section 123 may be subdivided into a plurality of subarrays (e.g., subarray 0, subarray 1, . . . , subarray N−1 shown at 125-1, 125-2, . . . , 125-N−1) respectively separated by sensing component stripes 124-0, 124-1, . . . , 124-N−1, as shown in FIG. 1B, that include sensing circuitry 150 and logic circuitry, as shown in FIG. 1A and described further in connection with FIGS. 2-9.

As described herein, an I/O line 155 may be selectably shared by a plurality of partitions, subarrays, rows, particular columns of memory cells, and/or an in-memory data switching network via the sensing component stripe coupled to each of the subarrays. For example, the sense amplifier and/or compute component of each of a selectable subset of a number of columns (e.g., eight column subsets of a total number of columns) may be selectably coupled to each of the plurality of shared I/O lines for data values stored (cached) in the sensing component stripe to be moved (e.g., transferred, transported, and/or fed) to each of the plurality of shared I/O lines.

As shown schematically in FIG. 1D, an architecture of a bank 121 and each section 123 of the bank may include a plurality of shared I/O lines 155 (e.g., data path, bus) configured to couple to the plurality of subarrays 125-0, 125-1, . . . , 125-N−1 of memory cells of the bank section 123 and a plurality of banks (not shown). The shared I/O lines 155 may be selectably coupled between subarrays, rows, particular columns of memory cells, and/or the in-memory data switching network via the sensing component stripes represented by 124-0, 124-1, . . . , 124-N−1 shown in FIG. 1B. As noted, the sensing component stripes 124-0, 124-1, . . . , 124-N−1 each include sensing circuitry 150 with sense amplifiers and compute components configured to couple to each column of memory cells in each subarray, as shown in FIG. 1A and described further in connection with FIGS. 2-9.

The shared I/O lines 155 may be utilized to increase a speed, rate, and efficiency of data movement in a PIM array (e.g., between subarrays and/or the in-memory data switching network). In at least one embodiment, using the shared I/O lines 155 provides an improved data path by providing at least a thousand bit width. In one embodiment, 2048 shared I/O lines are coupled to 16,384 columns to provide a 2048 bit width. The illustrated shared I/O lines 155 may be formed on pitch with the memory cells of the array.

In some embodiments, the controller 140 may be configured to provide instructions (control signals based on commands) and data to a plurality of locations of a particular bank 121 in the memory array 130, to the sensing component stripes 124-0, 124-1, . . . , 124-N−1 and/or to the in-memory data switching network 172 via the shared I/O lines 155 with control and data registers 151 and/or an instruction read path 161. For example, the control and data registers 151 and/or the instruction read path 161 may provide instructions to be executed using by the sense amplifiers and the compute components of the sensing circuity 150 in the sensing component stripes 124-0, 124-1, . . . , 124-N−1. FIG. 1D illustrates a switching component 171 associated with the controller 140 and coupled to a write path 149 to each of the subarrays 125-0, . . . , 125-N−1 and/or the data switching network 172 in the bank 121.

Implementations of PIM DRAM architecture may perform processing at the sense amplifier and compute component level. Implementations of PIM DRAM architecture may allow only a finite number of memory cells to be connected to each sense amplifier (e.g., around 512 memory cells). A sensing component stripe 124 may include from around 8,000 to around 16,000 sense amplifiers. For example, a sensing component stripe 124 may be configured to couple to an array of 512 rows and around 16,000 columns. A sensing component stripe may be used as a building block to construct the larger memory. In an array for a memory device, there may be 128 sensing component stripes, which corresponds to 128 subarrays, as described herein. Hence, 512 rows times 128 sensing component stripes would yield around 66,000 rows intersected by around 16,000 columns to form around a 1 gigabit DRAM.

As such, when processing at the sense amplifier level, there are only 512 rows of memory cells available to perform logic functions with each other and it may not be possible to easily perform logic functions on multiple rows where data is coupled to different sensing component stripes. To accomplish processing of data in different subarrays coupled to different sensing component stripes, all the data to be processed is moved into the same subarray in order to be coupled to the same sensing component stripe.

However, DRAM implementations have not been utilized to move data from one sensing component stripe to another sensing component stripe and/or from a memory array and/or sensing component stripe to an in-memory data switching network (e.g., a butterfly network by way of illustration and not by way of limitation). As mentioned, a sensing component stripe may contain as many as 16,000 sense amplifiers, which corresponds to around 16,000 columns or around 16,000 data values (e.g., bits) of data to be stored (e.g., cached) from each row. A DRAM DQ data bus (e.g., as shown at 156 in FIGS. 1A-1C) may be configured as a 64 bit part. As such, to transfer (move) the entire data from a 16,000 bit row from one sensing component stripe to another sensing component stripe using a DRAM DQ data bus would take, for instance, 256 cycles (e.g., 16,000 divided by 64).

In order to achieve data movement conducted with a high speed, rate, and efficiency from one sensing component stripe to another and/or to the data switching network 172 in PIM DRAM implementations, shared I/O lines 155 are described herein. For example, with 2048 shared I/O lines configured as a 2048 bit wide shared I/O line 155, movement of data from a full row, as just described, would take 8 cycles, a 32 times increase in the speed, rate, and efficiency of data movement. As such, compared other PIM DRAM implementations (e.g., relative to a 64 bit wide data path), utilization of the structures and processes described in the present disclosure saves time for data movement. In various embodiments, time may be saved, for example, by not having to read data out of one bank, bank section, and subarray thereof, storing the data, and then writing the data in another location and/or by reducing the number of cycles for data movement.

Accordingly, as shown and described, for example, in connection with FIGS. 1A, 1B, and 1D, a memory device 120 may include an array of memory cells and sensing circuitry selectably coupled to the array of memory cells with an I/O line 155 shared as a data path for in-memory data switching associated with the array. The memory device 120 may include an in-memory data switching network (e.g., as shown at 172 and 372 and described in connection with FIG. 1A and FIG. 3, respectively) selectably coupled to the respective shared I/O line 155. The memory device 120 may further include a controller 140 configured (e.g., via switching component 171) to couple to the in-memory data switching network and direct enablement of a switch protocol, as described herein.

In some embodiments, the in-memory data switching network may be selectably coupled to a sense line (e.g., digit lines shown at 205 and 305 and described in connection with FIG. 2 and FIG. 3, respectively) for corresponding memory cells of the array (e.g., in subarrays shown at 125-0, 125-1, . . . , 125-N−1 and at 325 and described in connection with FIG. 1B and FIG. 3, respectively) and the shared I/O line (e.g., as shown at 155 and 355 and described in connection with FIG. 1B and FIG. 3, respectively). In some embodiments, the in-memory data switching network may be selectably coupled to the sensing circuitry (e.g., as shown at 150 and 350 and described in connection with FIG. 1A and FIG. 3, respectively) and the shared I/O line. As described herein, the sensing circuitry may be formed on pitch with complementary sense lines for corresponding memory cells of the array. The sensing circuitry may include a sense amplifier (e.g., as shown at 206 and 306 and described in connection with FIGS. 2 and 3, and elsewhere herein) selectably coupled a sense line.

FIG. 1E is a block diagram of a bank 121 of a memory device in accordance with a number of embodiments of the present disclosure. Bank 121 may represent an example bank of a memory device (e.g., bank 0, bank 1, . . . , bank M−1). As shown in FIG. 1C, a bank 121 may include an A/C path 153 (e.g., a bus) coupled to a controller 140. Again, the controller 140 shown in FIG. 1E may, in various examples, represent at least a portion of the functionality embodied by and contained in the controller 140 shown in FIGS. 1A-1D.

As shown in FIG. 1E, a bank 121 may include a plurality of bank sections (e.g., bank section 123). As further shown in FIG. 1E, a bank section 123 may be subdivided into a plurality of subarrays (e.g., subarray 0, subarray 1, . . . , subarray N−1 shown at 125-0, 125-1, and 125-3 for short digit line subarrays and 126-0, 126-1, . . . , 126-N−1 for long digit line subarrays). The configurations of the numbers and/or positioning of the short and long digit line subarrays illustrated in FIG. 1E are shown for purposes of clarity and are not limited to these configurations. Although a bank section 123 may be configured as shown with a short digit line subarray 125-0 on top of a long digit line subarray 126-0, then followed by another short digit line subarray 125-1 on top of another long digit line subarray 126-1 with a total of four subarrays evenly interspersed at 1:1 ratio (e.g., in a partition 128-0) other numbers and/or ratios of short and/or long digit line subarrays are possible. For example, any feasible number of short and/or long digit line subarrays may be included in a bank section 123 and/or a partition 128 thereof in any ordering arrangement determined to be suitable for a particular implementation (e.g., with ratios of 1:1, 1:2, 1:4, 1:8, etc.) of the short digit line subarrays to the long digit line subarrays with each grouping of one or more short digit line subarrays positioned adjacent a group of one or more long digit line subarrays, among other configurations. Accordingly, in some embodiments, more than one short digit line subarray may be serially positioned adjacent to each other and/or more than one long digit line subarray may be serially positioned adjacent to each other.

The plurality of subarrays shown at 125-0, 125-1, and 125-3 for short digit line subarrays and 126-0, 126-1, . . . , 126-N−1 for long digit line subarrays may each be coupled to and/or separated by sensing component stripes 124-0, 124-1, . . . , 124-N−1 that may include sensing circuitry 150 and logic circuitry (e.g., as shown at 713 and described in connection with FIG. 7). As noted, the sensing component stripes 124-0, 124-1, . . . , 124-N−1 each include sensing circuitry 150, having at least sense amplifiers configured to couple to each column of memory cells in each subarray, as shown in FIG. 2 and described further in connection with FIGS. 3-9. The subarrays and associated sensing component stripes may be divided into a number of partitions (e.g., 128-0, 128-1, . . . , 128-M−1) that share an I/O line 155, as described further herein.

As shown schematically in FIG. 1E, a bank 121 and each section 123 of the bank may include a shared I/O line 155 as a data path (e.g., bus) coupled to a plurality of control/data registers 151 in an instruction and/or data (e.g., program instructions (PIM commands), read path 161 and coupled to a plurality of bank sections (e.g., bank section 123 in a particular bank 121). The controller 140 may be configured to receive a command to start performance of an operation in a given bank (e.g., bank 121-1). The controller 140 may be configured to retrieve instructions and/or constant data (e.g., using shared I/O line 155 coupled to control and data registers 151) from the plurality of locations for the particular bank and perform an operation using the compute component of the sensing circuity 150. The controller 140 may cache retrieved instructions and/or constant data local to the particular bank (e.g., in switching component 171 and/or logic circuitry 713).

As described herein, an I/O line may be selectably shared by a plurality of partitions, subarrays, rows, particular columns of memory cells, and/or the data switching network 172 via the sensing component stripe coupled to each of the subarrays. For example, the sense amplifier and/or compute component of each of a selectable subset of a number of columns (e.g., eight column subsets of a total number of columns) may be selectably coupled to each of the plurality of shared I/O lines for data values stored (cached) in the sensing component stripe to be moved (e.g., transferred, transported, and/or fed) to each of the plurality of shared I/O lines.

In some embodiments, the controller 140 may be configured to direct by providing instructions (commands) and data to a plurality of locations of a particular bank 121 in the memory array 130 and to the sensing component stripes 124-0, 124-1, . . . , 124-N−1, via the shared I/O line 155 coupled to control and data registers 151. For example, the control and data registers 151 may relay the instructions to be executed by the sense amplifiers and/or the compute components of the sensing circuity 150 in the sensing component stripes 124-0, 124-1, . . . , 124-N−1. FIG. 1E illustrates, for example, the controller 140 as being associated with the switching component 171 and coupled via a write path 149 to each of the short digit line subarrays 125-0, 125-1, and 125-3, long digit line subarrays 126-0, 126-1, . . . , 126-N−1, and/or sensing component stripes 124-0, 124-1, . . . , 124-N−1 in the bank 121 and/or the data switching network 172.

However, the shared I/O line 155 and/or the connection circuitry 232 described herein may be configured (e.g., formed and/or enabled) to move a result of performance of a single operation or a sequential plurality of operations to a suitable location other than back to the first subset 125 and/or the second subset 126 of subarrays of memory array 130. For example, the result data value may, in various embodiments, be moved to an external register via the shared I/O line 155 and/or the connection circuitry 232. Embodiments of such external registers may include a number of bank registers (not shown) associated with (e.g., selectably coupled to) the controller 140 of the bank 121 of the memory device 120 and/or registers (not shown) associated with the host 110 (e.g., which may be accessed directly via data bus 156 by I/O circuitry 144 and/or indirectly via the controller 140 through the out-of-band bus 157). Moreover, data values for storage and/or processing, and/or commands for doing so, by a particular long digit line storage subarray and/or a particular short digit line cache subarray may be input. The input may be performed, for example, using a data transfer protocol such as DDR4, among others, from the host CPU directly via data bus 156 by I/O circuitry 144 and/or indirectly via the controller 140 through the control bus 154.

As described in connection with FIG. 1C, a plurality of subarrays (e.g., the four subarrays 125-0, 125-1, 126-0, and 126-1 shown by way of example in FIG. 1C) and their respective sensing component stripes may constitute a first partition 128-0. An isolation stripe (not shown) may be positioned in between subarray 3 (126-1) and subarray 4 (125-2) such that subarray 126-1 is a last subarray in a first direction (e.g., downward in the context of FIG. 1E) of the first partition 128-0 and subarray 125-2 is a first subarray in the first direction of a second partition 128-1. A number of subarrays and their respective sensing component stripes may extend further in the first direction until a second isolation stripe (not shown) is positioned between the second partition 128-1 and a first subarray 126-N−1 of a third partition 128-M−1. As previously indicated, the subarrays may be arranged in any order in each bank section 123 and/or partition 128 such that, for example, the short digit line subarrays 125-0 and 125-2 may be the first subarrays, respectively, in partitions 128-0 and 128-1, whereas long digit line subarray 126-N−1 may be the first subarray in partition 128-M−1, among other possible configurations.

Embodiments, however, are not so limited. For example, in various embodiments, there may be any number of short digit line subarrays 125 and any number of long digit line subarrays 126 in the bank section 123, which may be separated by isolation stripes into any number of partitions (e.g., as long as there is a combination of at least one short digit line subarray with at least one long digit line subarray in the various partitions). In various embodiments, the partitions may each include a same number or a different number of short and/or long digit line subarrays, sensing component stripes, etc., depending on the implementation.

Accordingly, as shown and described, for example, in connection with FIGS. 1A, 1C, and 1E, a memory device 120 may include an array of memory cells and sensing circuitry selectably coupled to the array of memory cells, the sensing circuitry including a sense amplifier (e.g., at least a sense amplifier). The memory device 120 may include a plurality of I/O lines 155 selectably shared as a data path for in-memory data switching associated with the array and movement of a data value from a source location to a destination location in the array. In various embodiments, the source location may be, or may be in, a first subarray and the destination location may be, or may be in, a second subarray in the array (e.g., any of subarrays shown at 125-0 and 125-1 and 126-0, . . . , 126-N−1 and described in connection with FIG. 1C).

The memory device 120 may include an in-memory data switching network (e.g., as shown at 172 and 372 and described in connection with FIG. 1A and FIG. 3, respectively). The memory device 120 may further include a controller 140 configured to selectably couple the respective plurality of shared I/O lines to the in-memory data switching network and direct (e.g., via switching component 171) enablement of a switch protocol, as described herein, of the in-memory data switching network. In some embodiments, the controller may be configured to selectably enable a plurality of switch protocols. The enabled switch protocol may perform a number of switch operations to switch a position of a data value in a sequence of data values moved, via the plurality of shared I/O lines, to the in-memory data switching network from the array.

The memory device 120 may be configured to move a plurality of data values from the source location using a plurality of first sense amplifiers coupled to the respective plurality of shared I/O lines and move the plurality of data values to the destination location using a plurality of second sense amplifiers coupled to the plurality of shared I/O lines. The memory device 120 may, in some embodiments, be further configured to move a plurality of data values to the in-memory data switching network via the plurality of sense amplifiers selectably coupled to the respective plurality of shared I/O lines 155. The memory device 120 may, in some embodiments, be further configured to move a plurality of data values to the in-memory data switching network via a plurality of sense lines (e.g., digit lines shown at 205 and 305 and described in connection with FIG. 2 and FIG. 3, respectively) selectably coupled to the respective plurality of shared I/O lines 155.

As described herein, the in-memory data switching network may include a plurality of levels each having a plurality of switch nodes. The plurality of levels of a data switching network 472 are shown at 409-0, . . . , 409-N−1 and described in connection with FIG. 4. Alternatively or in addition, the plurality of levels of a data switching network 972-1 and 972-2 are shown at 967-0, . . . , 967-N−1 and described in connection with FIG. 9A and FIG. 9B. A switch node (e.g., as shown at 966 and described in connection with FIG. 9A) may, in various embodiments, include a number of latches and a number of switches (e.g., as shown at 970 and 963, respectively, and described in connection with FIG. 9A). In some embodiments, a number of the plurality of switch nodes (e.g., as shown at 966-0, . . . , 966-M−1 and described in connection with FIG. 9A and FIG. 9B) per level may correspond to a number of a plurality of sense amplifiers coupled to the array.

In various embodiments, the number of switch nodes may be the same as the number of sense amplifiers coupled to the array or the number of switch nodes may be a multiple of or a fraction (e.g., an eighth, a sixteenth, etc.) of the number of sense amplifiers (e.g., via multiplexing with column select circuitry 358-1 and 358-2 shown in and described in connection with FIG. 3, among other possibilities). For example, the memory device 120 may, in some embodiments, include a plurality of sense amplifiers coupled to a corresponding plurality of columns of the array of memory cells and a multiplexer configured to select a sense amplifier to couple to a shared I/O line to move a data value to the in-memory data switching network. Alternatively or in addition, the memory device 120 may, in some embodiments, include a plurality of columns of the array of memory cells and a multiplexer including the column select circuitry. The multiplexer may be configured to select a memory cell of a column to couple to a shared I/O line to move a data value to the in-memory data switching network.

The memory device 120 may, in various embodiments, include a plurality of subarrays (e.g., as shown at 125-0, 125-1, . . . , 125-N−1 and described in connection with FIG. 1B) of memory cells. The sensing circuitry may be coupled to the plurality of subarrays via a plurality of columns (e.g., as shown at 122 and described in connection with FIGS. 1B and 1C and at 322-0 and described in connection with FIG. 3) of the memory cells. Such sensing circuitry may include the sense amplifier and a compute component (e.g., as shown at 231 and 331 and described in connection with FIG. 2 and FIG. 3, respectively) coupled to each of the plurality of columns. Each subarray of the respective plurality of subarrays of such a memory device may, in some embodiments, include a number of memory cells in a column that is substantially equal to a number of memory cells in a column of an adjacent subarray (e.g., the same as in all subarrays).

The memory device 120 may, in various embodiments, include a first subset (e.g., short digit line subarrays shown at 125-0 and 125-1 and described in connection with FIG. 1C and FIG. 1E) of a plurality of subarrays of memory cells. The memory device 120 may, in various embodiments, further include a second subset (e.g., long digit line subarrays shown 126-0, . . . , 126-N−1 and described in connection with FIG. 1C and FIG. 1E) of the respective plurality of subarrays. Sensing circuitry may be selectably coupled to the first and second subsets. The sensing circuitry may include a sense amplifier and a compute component coupled to a respective sense line of the first subset (short digit line subarrays) and a sense amplifier, without a compute component, coupled to a respective sense line of the second subset (long digit line subarrays). In some embodiments, a number of memory cells in a column of a subarray of the first subset may be at most half of a number of memory cells in a column of a subarray of the second subset.

The memory device 120 may, in various embodiments, include a sensing component stripe (e.g., as shown at 124-0, . . . , 124-N−1 and described in connection with FIGS. 1B-1E) that may include a number of a plurality of sense amplifiers and/or compute components that corresponds to a number of a plurality of columns of memory cells in a subarray. The number of the plurality of sense amplifiers and/or compute components may be selectably coupled to the respective plurality of shared I/O lines for movement of a corresponding plurality of data values to the in-memory data switching network.

FIG. 1F is another block diagram of an apparatus in the form of a computing system including a memory device having a I/O line 155 in a data path local to bank sections 123-0, 123-1, . . . , 123-N−1 of an array in accordance with a number of embodiments of the present disclosure. For example, bank 121-1 may represent an example bank of a memory device 120. As shown in FIG. 1F, a bank 121-1 may include a plurality of main memory columns (shown horizontally as X) (e.g., 16,384 columns in an example DRAM bank). Additionally, the bank 121-1 may be divided up into bank sections (e.g., quadrants of 32 subarrays) 123-0, 123-1, . . . , 123-N−1. Each bank section may be associated with a plurality of compute components 431-1, . . . , 431-Z in logic stripes 109-0, 109-1, . . . , 109-N−1 in a compute unit 460 in a data path of the plurality of shared I/O lines 155. Each of the of the bank sections 123-0, . . . , 123-N−1 may include a plurality of rows (shown vertically as Y) (e.g., each section may be a quadrant that includes 32 subarrays that each may include 512 rows and 16 subrows per row in an example DRAM bank). Embodiments are not limited to the example horizontal and/or vertical orientation of columns and rows and subrows described here or the example numbers thereof.

Each bank section, in some embodiments, may have a plurality of compute components 431-1, . . . , 431-Z and logic stripes 109-0, . . . , 109-N−1 in the compute unit 460 in a data path of the plurality of shared I/O lines 155 associated therewith. In various embodiments, the logic stripes also may include a plurality of switch nodes (e.g., as shown at 966 and described in connection with FIGS. 9A and 9B). In some embodiments, a number of the plurality of compute components may correspond to a number of the plurality of compute components and/or a number of the plurality of shared I/O lines. For example, the number of shared I/O lines used to move data values to the compute components in the logic stripes may correspond to the number of shared I/O lines used to move data values to the switch nodes in the logic stripes. In some embodiments, the same shared I/O lines may be used to selectably move the data values to either the compute components or the switch nodes. In some embodiments, the compute components may be associated with, or part of, the switch nodes. The bank 121-1 may include a controller 140 and/or a number of controllers associated with each bank section and/or subarray to direct movement (e.g., via shared I/O lines 155) and/or switch operations (e.g., via switching component 171) on data values loaded to the plurality of compute components 431-1, . . . , 431-Z and/or switch nodes 966-0, 966-1, . . . , 966-M−1 in logic stripes 109-0, . . . , 109-N−1 in a compute unit 460 in a data path of the plurality of shared I/O lines 155.

FIG. 2 is a schematic diagram illustrating circuitry of a memory device 120, the circuitry including a sense amplifier 206 and a compute component 231, which each may, in various embodiments, be included in sensing circuitry 250 and/or logic stripes 124, in accordance with a number of embodiments of the present disclosure. The sensing circuitry 250 may correspond to sensing circuitry 150 shown in FIG. 1A.

As shown in the example embodiment of FIG. 2, a memory cell may include a storage element (e.g., capacitor) and an access device (e.g., transistor). For example, a first memory cell may include transistor 202-1 and capacitor 203-1, and a second memory cell may include transistor 202-2 and capacitor 203-2, etc. In this embodiment, the memory array 230 is a DRAM array of 1T1B (one transistor one capacitor) memory cells, although other embodiments of configurations may be used (e.g., 2T2C with two transistors and two capacitors per memory cell). In a number of embodiments, the memory cells may be destructive read memory cells (e.g., reading the data stored by the cell destroys the data such that the data originally stored by the cell is refreshed after being read).

The cells of the memory array 230 may be arranged in rows coupled by access (word) lines 204-X (Row X), 204-Y (Row Y), etc., and columns coupled by pairs of complementary sense lines (e.g., digit lines DIGIT(D) and DIGIT(D) shown in FIG. 2). The individual sense lines corresponding to each pair of complementary sense lines may also be referred to as digit lines 205-1 for DIGIT (D) and 205-2 for DIGIT (D)_, respectively, or corresponding reference numbers in FIG. 3. Although only one pair of complementary digit lines are shown in FIG. 2, embodiments of the present disclosure are not so limited, and an array of memory cells may include additional columns of memory cells and digit lines (e.g., 4,096, 8,192, 16,384, etc.).

Although rows and columns are illustrated as orthogonally oriented in a plane, embodiments are not so limited. For example, the rows and columns may be oriented relative to each other in any feasible three-dimensional configuration. For example, the rows and columns may be oriented at any angle relative to each other, may be oriented in a substantially horizontal plane or a substantially vertical plane, and/or may be oriented in a folded topology, among other possible three-dimensional configurations.

Memory cells may be coupled to different digit lines and word lines. For example, a first source/drain region of a transistor 202-1 may be coupled to digit line 205-1 (D), a second source/drain region of transistor 202-1 may be coupled to capacitor 203-1, and a gate of a transistor 202-1 may be coupled to word line 204-Y. A first source/drain region of a transistor 202-2 may be coupled to digit line 205-2 (D)_, a second source/drain region of transistor 202-2 may be coupled to capacitor 203-2, and a gate of a transistor 202-2 may be coupled to word line 204-X. A cell plate, as shown in FIG. 2, may be coupled to each of capacitors 203-1 and 203-2. The cell plate may be a common node to which a reference voltage (e.g., ground) may be applied in various memory array configurations.

The memory array 230 is configured to couple to sensing circuitry 250 in accordance with a number of embodiments of the present disclosure. In this embodiment, the sensing circuitry 250 comprises a sense amplifier 206 and a compute component 231 corresponding to respective columns of memory cells (e.g., coupled to respective pairs of complementary digit lines). However, in some embodiments, the sensing circuitry 250 used for in data path compute operations performed by compute components of logic stripes may not include compute components in the sensing circuitry 250. The sense amplifier 206 may be coupled to the pair of complementary digit lines 205-1 and 205-2. If present, the compute component 231 may be coupled to the sense amplifier 206 via pass gates 207-1 and 207-2. The gates of the pass gates 207-1 and 207-2 may be coupled to operation selection logic 213.

The operation selection logic 213 may include pass gate logic for controlling pass gates that couple the pair of complementary digit lines un-transposed between the sense amplifier 206 and the compute component 231 and swap gate logic for controlling swap gates that couple the pair of complementary digit lines transposed between the sense amplifier 206 and the compute component 231. The operation selection logic 213 may also be coupled to the pair of complementary digit lines 205-1 and 205-2. The operation selection logic 213 may be configured to control continuity of pass gates 207-1 and 207-2 based on a selected operation.

The sense amplifier 206 may be operated to determine a data value (e.g., logic state) stored by a selected memory cell. The sense amplifier 206 may comprise a cross coupled latch, which may be referred to herein as a primary latch. In the example illustrated in FIG. 2, the circuitry corresponding to sense amplifier 206 comprises a latch 215 including four transistors coupled to a pair of complementary digit lines D 205-1 and (D)_205-2. However, embodiments are not limited to this example. The latch 215 may be a cross coupled latch (e.g., gates of a pair of transistors) such as n-channel transistors (e.g., NMOS transistors) 227-1 and 227-2 are cross coupled with the gates of another pair of transistors, such as p-channel transistors (e.g., PMOS transistors) 229-1 and 229-2). The cross coupled latch 215 comprising transistors 227-1, 227-2, 229-1, and 229-2 may be referred to as the primary latch.

In operation, when a memory cell is being sensed (e.g., read), the voltage on one of the digit lines 205-1 (D) or 205-2 (D)_ will be slightly greater than the voltage on the other one of digit lines 205-1 (D) or 205-2 (D)_. An ACT signal and an RNL* signal may be driven low to enable (e.g., fire) the sense amplifier 206. The digit lines 205-1 (D) or 205-2 (D)_ having the lower voltage will turn on one of the PMOS transistor 229-1 or 229-2 to a greater extent than the other of PMOS transistor 229-1 or 229-2, thereby driving high the digit line 205-1 (D) or 205-2 (D)_ having the higher voltage to a greater extent than the other digit line 205-1 (D) or 205-2 (D)_ is driven high.

Similarly, the digit line 205-1 (D) or 205-2 (D)_ having the higher voltage will turn on one of the NMOS transistor 227-1 or 227-2 to a greater extent than the other of the NMOS transistor 227-1 or 227-2, thereby driving low the digit line 205-1 (D) or 205-2 (D)_ having the lower voltage to a greater extent than the other digit line 205-1 (D) or 205-2 (D)_ is driven low. As a result, after a short delay, the digit line 205-1 (D) or 205-2 (D)_ having the slightly greater voltage is driven to the voltage of the supply voltage V_CC through a source transistor, and the other digit line 205-1 (D) or 205-2 (D)_ is driven to the voltage of the reference voltage (e.g., ground) through a sink transistor. Therefore, the cross coupled NMOS transistors 227-1 and 227-2 and PMOS transistors 229-1 and 229-2 serve as a sense amplifier pair, which amplify the differential voltage on the digit lines 205-1 (D) and 205-2 (D)_ and operate to latch a data value sensed from the selected memory cell.

Embodiments are not limited to the sense amplifier 206 configuration illustrated in FIG. 2. As an example, the sense amplifier 206 may be a current-mode sense amplifier and a single-ended sense amplifier (e.g., sense amplifier coupled to one digit line). Also, embodiments of the present disclosure are not limited to a folded digit line architecture such as that shown in FIG. 2.

The sense amplifier 206 may, in conjunction with the compute component 231, be operated to perform various operations using data from an array as input. In a number of embodiments, the result of an operation may be stored back to the array without transferring the data via a digit line address access (e.g., without firing a column decode signal such that data is transferred to circuitry external from the array and sensing circuitry via local I/O lines). As such, a number of embodiments of the present disclosure may enable performing operations and compute functions associated therewith using less power than various previous approaches. Additionally, since a number of embodiments eliminate the need to transfer data across local and global I/O lines in order to perform compute functions (e.g., between memory and discrete processor), a number of embodiments may enable an increased (e.g., faster) processing capability as compared to previous approaches.

The sense amplifier 206 may further include equilibration circuitry 214, which may be configured to equilibrate the digit lines 205-1 (D) and 205-2 (D)_. In this example, the equilibration circuitry 214 comprises a transistor 224 coupled between digit lines 205-1 (D) and 205-2 (D)_. The equilibration circuitry 214 also comprises transistors 225-1 and 225-2 each having a first source/drain region coupled to an equilibration voltage (e.g., V_DD/2), where V_DD is a supply voltage associated with the array. A second source/drain region of transistor 225-1 may be coupled digit line 205-1 (D), and a second source/drain region of transistor 225-2 may be coupled digit line 205-2 (D)_. Gates of transistors 224, 225-1, and 225-2 may be coupled together, and to an equilibration (EQ) control signal line 226. As such, activating EQ enables the transistors 224, 225-1, and 225-2, which effectively shorts digit lines 205-1 (D) and 205-2 (D)_ together and to the equilibration voltage (e.g., V_CC/2).

Although FIG. 2 shows sense amplifier 206 comprising the equilibration circuitry 214, embodiments are not so limited, and the equilibration circuitry 214 may be implemented discretely from the sense amplifier 206, implemented in a different configuration than that shown in FIG. 2, or not implemented at all.

As described further below, in a number of embodiments, the sensing circuitry 250 (e.g., sense amplifier 206 and compute component 231) may be operated to perform a selected operation and initially store the result in one of the sense amplifier 206 or the compute component 231 without transferring data from the sensing circuitry via a local or global I/O line (e.g., without performing a sense line address access via activation of a column decode signal, for instance).

However, in embodiments described herein, sensing circuitry 250 having sense amplifiers 206, which in some embodiments may also include compute components 231 as shown in FIG. 2, may also couple the memory cells from a multiplexed column of memory cells in an array to the compute components 431-1, . . . , 431-Z and/or logic stripes 409-0, . . . , 409-N−1 in a compute unit 460 in the data path of the plurality of shared I/O lines 455 local to the array as discussed in connection with FIG. 4. In this manner, the compute components 431-1, . . . , 431-Z and/or logic stripes 409-0, . . . , 409-N−1 may be indirectly coupled to the memory cells of a column through the plurality of shared I/O lines 455 via select logic (discussed in connection with FIGS. 3-9).

Performance of operations (e.g., Boolean logical operations involving data values) is fundamental and commonly used. Boolean logical operations are used in many higher level operations. Consequently, speed and/or power efficiencies that may be realized with improved operations, may translate into speed and/or power efficiencies of higher order functionalities.

As shown in FIG. 2, the compute component 231 may also comprise a latch, which may be referred to herein as a secondary latch 264. The secondary latch 264 may be configured and operated in a manner similar to that described above with respect to the primary latch 215, with the exception that the pair of cross coupled p-channel transistors (e.g., PMOS transistors) included in the secondary latch may have their respective sources coupled to a supply voltage (e.g., V_DD), and the pair of cross coupled n-channel transistors (e.g., NMOS transistors) of the secondary latch may have their respective sources selectively coupled to a reference voltage (e.g., ground), such that the secondary latch is continuously enabled. The configuration of the compute component 231 is not limited to that shown in FIG. 2, and various other embodiments are feasible, for example, for use as the compute components 431-1, . . . , 431-Z described in connection with logic stripes 409-0, . . . , 409-N−1 of FIG. 4.

The logic stripes 409-0, . . . , 409-N−1 may correspond to the in-memory data switching network 472 described herein. The logic stripes (e.g., a subset or all of the logic stripes in compute unit 460) also may correspond to the levels (e.g., a shown at 967-0, 967-1, 967-N−1 and described in connection with FIGS. 9A and 9B) of the data switching network 472.

As described herein, a memory device (e.g., 120 in FIG. 1A) may be configured to couple to a host (e.g., 110) via a data bus (e.g., 156) and a control bus (e.g., 154). A bank 121 in the memory device 120 may include a plurality of bank sections (123-0, . . . , 123-N−1 in FIG. 1F) of memory cells. The bank 121 may include sensing circuitry (e.g., 150 in FIG. 1A and corresponding reference numbers in FIGS. 2 and 3) coupled to the plurality of arrays via a plurality of columns (FIGS. 1B and 1C) of the memory cells. The sensing circuitry may include a sense amplifier and/or a compute component (e.g., 206 and 231, respectively, in FIG. 2) coupled to each of the columns.

Each bank section 123 may be associated with a plurality of logic stripes (e.g., 109-0, 109-1, . . . , 109-N−1 in FIG. 1F) in a compute unit in a data path of a plurality of shared I/O lines (155 in FIG. 1F) local to array 230. A controller (e.g., 140 in FIGS. 1A and 1B) coupled to the bank may be configured to direct, as described herein, movement of data values to a compute component 431 (FIG. 4) in a logic stripe 409 (FIG. 4) in a compute unit 360/460 (FIGS. 3 and 4) in a data path of a shared I/O line 355/455 (FIGS. 3 and 4) local to the array 230.

The memory device may include a logic stripe (e.g., 109 in FIG. 1F and 409 in FIG. 4) having a plurality of compute components (e.g., 431-1, . . . , 431-Z in FIG. 4) that each may correspond to a number of the plurality of columns (FIGS. 1B and 1C) of the memory cells in a subrow (e.g., 465-1, . . . , 465-16 in FIG. 4). As discussed further in connection with FIG. 3, the number of sense amplifiers 206 and/or compute components 231 in sensing circuitry 250 may be selectably coupled (e.g., multiplexed via column select circuitry 358-1 and 358-2 in FIG. 3) to a plurality of shared I/O lines 355 (FIG. 3). The column select circuitry may be configured to selectably sense data in a particular column of memory cells of an array by being selectably coupled to a plurality of (e.g., four, eight, and sixteen, among other possibilities) sense amplifiers and/or compute components.

In some embodiments, a number of a plurality of logic stripes (e.g., 109-0, . . . , 109-N−1 in FIG. 1F) in a bank may correspond to a number of bank sections 123-0, . . . , 123-N−1 in FIG. 1B (e.g., a quadrant having a plurality of subarrays) in the bank. Alternatively or in addition, the number of the plurality of logic stripes in a bank may correspond to a number of a plurality of subrows in a row of a DRAM array. A logic stripe may include a plurality of compute components 431-1, . . . , 431-Z (FIG. 4) in a data path of a shared I/O local 455 (FIG. 4) to the array 230 that may be configured and/or operate like the compute components 231 shown in FIG. 2. A logic stripe may further include a plurality of switch nodes 966-0, 966-1, . . . , 966-M−1 whereby a plurality of logic stripes (e.g., 109-0, . . . , 109-N−1 in FIG. 1F and/or 967-0, . . . , 967-N−1 in FIGS. 9A and 9B) may be configured and/or operate as the in-memory data switching network described herein (e.g., as shown at 172 and 472 and described in connection with FIGS. 1A and 4 and elsewhere herein). As will be shown in FIG. 3, data values sensed from a row or subrow of the array may be moved in parallel by column select logic via a plurality of shared I/O lines 355 (FIG. 3) to a plurality of compute components 431 (FIG. 4) and/or switch nodes 966 (FIGS. 9A and 9B) in a compute unit 360/460 (FIGS. 3 and 4) of a data path of the plurality of shared I/O lines 355/455 (FIGS. 3 and 4). In some embodiments, the amount of data may correspond to a 1K bit width of the plurality of shared I/O lines, which also may correspond the number of memory cells and/or data values of a subrow.

In various embodiments, connection circuitry 232-1 may, for example, be coupled at 217-1 and connection circuitry 232-2 may be coupled at 217-1 to a primary latch 215 (e.g., sense amplifier 206 serving as a latch associated with a compute component 231 in a logic stripe) for movement of sensed, stored, and/or data values of a logic stripe on which an operation has been performed. The data values may be moved to a selected latch, compute component 231, and/or switch node 966 in another logic stripe, as described herein, directly (e.g., as a bit serial link) via the connection circuitry 232-1 and 232-2 (e.g., without movement via a shared I/O line).

Although FIG. 2 shows connection circuitry 232-1 and 232-2 to be coupled at 217-1 and 217-2, respectively, of the primary latch 215, embodiments are not so limited. For example, connection circuitry 232-1 and 232-2 may, for example, be coupled to the secondary latch 264 (e.g., compute component 231) for movement of the data values to a selected latch and/or compute component 231 in another logic stripe via the connection circuitry 232-1 and 232-2. For example, such connection circuitry 232-1 and 232-2 may enable (e.g., as directed by controller 140) a cascade of data values (bits) from latches, compute components, and/or switch nodes in a first logic stripe to corresponding latches and/or compute components in a second logic stripe (e.g., an adjacent logic stripe) for performance of a sequence of compute and/or switch operations in a plurality of logic stripes (e.g., as described in connection with FIGS. 9A and 9B).

FIG. 3 is a schematic diagram illustrating circuitry for a plurality of shared I/O lines in a data path of an array in accordance with a number of embodiments of the present disclosure. As described in connection with FIG. 3, the apparatus may be configured to move (e.g., copy, transfer, and/or transport) data from a source location, including a particular row (e.g., 319 in FIG. 3) and column address associated with a first number of sense amplifiers and/or compute components to a shared I/O line (e.g., 355 in FIG. 3). In addition, the apparatus may be configured to move the data to a destination location, including a particular logic stripe 409 (FIG. 4) associated with a compute unit 360 (FIG. 3) and/or an in-memory data switching network 372 in a data path of the shared I/O line 355 (FIG. 3). For example, the data switching network 372 may, in some embodiments, be configured to be part of the logic stripes 409 of the compute unit 360/460. However, in some embodiments, the data switching network 372 may be associated with (e.g., although separate from but on chip with) the memory array of the memory device (e.g., in the embodiments shown in and described in connection with FIGS. 1B-1E).

As the reader will appreciate, each shared I/O line 355 (FIG. 3) may be a single line or may include a pair of complementary shared I/O lines (e.g., shared I/O line and shared I/O line* in FIG. 3). In some embodiments, 2K shared I/O lines (e.g., complementary pairs of shared I/O lines) may be configured as a 2K bit wide shared I/O line. In some embodiments, 1K shared I/O lines (e.g., complementary pairs of shared I/O lines) may be configured as a 1K bit wide shared I/O line.

FIG. 3 shows eight sense amplifiers (e.g., sense amplifiers 0, 1, . . . , 7 shown at 306-0, 306-1, . . . , 306-7, respectively) each coupled to a respective pair of complementary shared I/O lines 355 (e.g., shared I/O line and shared I/O line*). FIG. 3 also shows eight compute components (e.g., compute components 0, 1, . . . , 7 shown at 331-0, 331-1, . . . , 331-7) each coupled to a respective sense amplifier (e.g., as shown for sense amplifier 0 at 306-0) via respective pass gates 307-1 and 307-2 and digit lines 305-1 and 305-2. The pass gates may be connected as shown in FIG. 2 and may be controlled by an operation selection signal, Pass. For example, an output of the selection logic may be coupled to the gates of the pass gates 307-1 and 307-2 and digit lines 305-1 and 305-2. In some embodiments, corresponding pairs of the sense amplifiers and compute components may contribute to formation of the sensing circuitry indicated at 350-0, 350-1, . . . , 350-7.

Data values present on the pair of complementary digit lines 305-1 and 305-2 may be loaded into the sense amplifier 306-0 as described in connection with FIG. 2. In some embodiments, when the pass gates 307-1 and 307-2 are enabled, data values on the pair of complementary digit lines 305-1 and 305-2 may be passed from the sense amplifiers to the compute component (e.g., 306-0 to 331-0). The data values on the pair of complementary digit lines 305-1 and 305-2 may be the data value stored by the sense amplifier 306-0 when the sense amplifier is fired.

The sense amplifiers 306-0, 306-1, . . . , 306-7 in FIG. 3 may each correspond to sense amplifier 206 shown in FIG. 2. The compute components 331-0, 331-1, . . . , 331-7 shown in FIG. 3 may each correspond to compute component 231 shown in FIG. 2. An individual sense amplifier, or a combination of one sense amplifier with one compute component, may contribute to the sensing circuitry (e.g., 350-0, 350-1, . . . , 350-7) of a portion of a DRAM memory subarray 325 coupled to a shared I/O line 355 shared by a number of logic stripes of compute unit 360 in a data path of the shared I/O lines 355.

The configurations of embodiments illustrated in FIG. 3 are shown for purposes of clarity and are not so limited. For instance, the configuration illustrated in FIG. 3 for the sense amplifiers 306-0, 306-1, . . . , 306-7 in combination with the compute components 331-0, 331-1, . . . , 331-7 and the shared I/O line 355 is not limited to half the combination of the sense amplifiers 306-0, 306-1, . . . , 306-7 and/or compute components 331-0, 331-1, . . . , 331-7 of the sensing circuitry being formed above the columns 322 of memory cells (not shown) and half being formed below the columns 322 of memory cells. Nor are the number of such combinations of the sense amplifiers and/or compute components forming the sensing circuitry configured to couple to a shared I/O line limited to eight. For example, the number of sense amplifiers and/or compute components forming the sensing circuitry configured to couple to a shared I/O line may be 16 when the number of subrows per row and/or the number of logic stripes is 16. In addition, the configuration of the shared I/O line 355 is not limited to being split into two for separately coupling each of the two sets of complementary digit lines 305-1 and 305-2, nor is the positioning of the shared I/O line 355 limited to being in the middle of the combination of the sense amplifiers and/or compute components forming the sensing circuitry (e.g., rather than being at either end of the combination of the sense amplifiers and the compute components).

The circuitry illustrated in FIG. 3 also shows column select circuitry 358-1 and 358-2 that is configured to implement data movement operations by multiplexing with respect to particular sensing circuitry 350 (e.g., the sense amplifiers and/or compute components thereof), particular columns 322 of a subarray 325, the complementary digit lines 305-1 and 305-2 associated therewith, the data switching network 372, and/or the shared I/O line 355 (e.g., as directed by the controller 140 shown in FIGS. 1A-1F). For example, column select circuitry 358-1 has select lines 0, 2, 4, and 6 that are configured to couple with corresponding columns, such as column 0 (332-0), column 2, column 4, and column 6. Column select circuitry 358-2 has select lines 1, 3, 5, and 7 that are configured to couple with corresponding columns, such as column 1, column 3, column 5, and column 7. The column select circuitry 358 described in connection with FIG. 3 may, in various embodiments, represent at least a portion of the functionality embodied by and contained in multiplexers (e.g., an 8 way multiplexer, a 16 way multiplexer, etc.).

Controller 140 may be coupled to column select circuitry 358 to control select lines (e.g., select line 0) to access data values stored by the sense amplifiers, compute components, and/or present on the pair of complementary digit lines (e.g., 305-1 and 305-2 when selection transistors 359-1 and 359-2 are activated via signals from select line 0). Activating the selection transistors 359-1 and 359-2 (e.g., as directed by the controller 140) enables coupling of sense amplifier 306-0, compute component 331-0, and/or complementary digit lines 305-1 and 305-2 of column 0 (322-0) to move data values on digit line 0 and digit line 0* to shared I/O line 355. For example, the moved data values may be data values from a particular row 319 stored (cached) in sense amplifier 306-0 and/or compute component 331-0. Data values from each of columns 0 through 7 may similarly be selected by controller 140 activating the appropriate selection transistors.

Moreover, enabling (e.g., activating) the selection transistors (e.g., selection transistors 359-1 and 359-2) may enable a particular sense amplifier and/or compute component (e.g., 306-0 and/or 331-0, respectively) and/or complementary digit lines 305-1 and 305-2 of column 0 (322-0) to be coupled with a shared I/O line 355 such that the data values may be moved to (e.g., placed on and/or transferred to) the shared I/O line 355. In some embodiments, one column at a time is selected (e.g., column 322-0) to be coupled to a particular shared I/O line 355 to move (e.g., copy, transfer, and/or transport) the stored data values. In the example configuration of FIG. 3, the shared I/O line 355 is illustrated as a shared, differential I/O line pair (e.g., shared I/O line and shared I/O line*). Hence, selection of column 0 (322-0) could yield two data values (e.g., two bits with values of 0 and/or 1) from a subrow of a row (e.g., row 319) and/or as stored by the sense amplifier and/or compute component associated with complementary digit lines 305-1 and 305-2. These data values could be input in parallel to each shared, differential I/O pair (e.g., shared I/O and shared I/O*) of the shared differential I/O line 355.

FIG. 4 is a block diagram illustrating a bank section 423 of an array 130 (FIG. 1A) coupled to a compute unit 460, having a plurality of logic stripes (409-0, . . . , 409-N−1) by a plurality of shared I/O lines 455 in a data path local to the array 130 in accordance with a number of embodiments of the present disclosure.

Ordinal numbers, as used herein, may not be used to indicate a particular ordering and/or relationship between the components. For example, movement of a first data value from a first subrow of a first row of a memory array via the shared I/O lines to a first compute component of a first logic stripe is intended to indicate that a particular data value from a particular subrow (which may be, but is not necessarily, the first subrow in a sequence of subrows) of a particular row may be moved to a particular compute component of a particular logic stripe (each of which may be, but is not necessarily, the first in a sequence of compute components and/or logic stripes). Similarly, movement of a second data value from a second subrow of the first row (which may be a next subrow adjacent the previously mentioned first subrow but may be, but is not necessarily, the second subrow in the sequence of subrows) is intended to indicate that a particular data value from the second subrow of the same row may be moved to a particular compute component of a different logic stripe. For example, referring to the second data value being moved to the second compute component of the second logic stripe is used to associate the second data value with a compute component and/or a logic stripe that is different than those previously referred to as the first of such components. As such, the second compute component may be, but is not necessarily, the first compute component in a sequence of compute components of the second logic stripe and/or the second logic stripe may be, but is not necessarily, the second logic stripe in a sequence of logic stripes.

Similarly, as described herein, a controller being configured to direct, in a first operation cycle, a first parallel movement (e.g., via the shared I/O lines) of a number of a plurality of data values of the first subrow to a corresponding number of a plurality of first compute components of the first logic stripe is intended to indicate that the controller may direct performance in a specific operation cycle (e.g., in a time frame of around 2 to 60 nanoseconds (ns)) of movement of a particular number corresponding to the plurality of data values of the first subrow to the same number of compute components of the first logic stripe. The controller being configured to direct, in a second operation cycle, a second parallel movement of a number of a plurality of data values of the second subrow to a corresponding number of a plurality of second compute components of the second logic stripe is intended to indicate that in the second operation cycle (which may be, but is not necessarily, the next, e.g., adjacent, 2-60 ns time frame) the controller may direct performance of movement of a particular number corresponding to the plurality of data values of the second subrow to the same number of compute components of the second logic stripe. The particular number of the plurality of data values of the second subrow and/or of the second compute components of the second logic stripe may be, but is not necessarily, the same number as that of the data values of the first subrow and/or of the first compute components of the first logic stripe.

As described herein, the plurality of shared I/O lines 455 may be selectably shared by a plurality of subarrays, bank sections, quadrants, rows, subrows, and/or particular columns of memory cells via select logic coupled to each array. For example, the sensing circuitry 150 and/or additional latches 170, including a sense amplifier and select logic for multiplexing each of a selectable number of subsets of a number of columns (e.g., 8, 16, etc., column subsets of a total number of columns) may be selectably coupled to each of the plurality of shared I/O lines 455 for data values to be moved to the plurality of compute components 431-1, . . . , 431-Z and/or logic stripes 409-0, . . . , 409-N−1 in a compute unit 460 in a data path of the plurality of shared I/O lines 455. In some embodiments, the plurality of compute components 431-1, . . . , 431-Z selectably coupled to each of the plurality of shared I/O lines 455 may correspond to the number of columns selectably coupled to the plurality of shared I/O lines (e.g., 1K, 2K, etc.).

The plurality of shared I/O lines 455 may selectably couple a first subrow of a row of the array via the sensing circuitry to a first compute component 431 and/or switch node 966 (e.g., a number of latches 970 and/or switches 963 of each switch node 966 as described in connection with FIGS. 9A and 9B) in the data path to move a first data value from the first subrow to the first compute component 431 and/or switch node 966. As used herein, a “subrow” is intended to mean a predetermined subset of memory cells of the row of the array that stores a predetermined number of data values. For example, one subrow of a row may be a predetermined 1024 (1K) memory cells of a row having 16,384 (16K) memory cells, thereby resulting in 16 subrows of the row (e.g., as shown at 465-1, 465-2, . . . , 465-16 and described in connection with FIG. 4 and elsewhere herein). The plurality of shared I/O lines selectably couples a second subrow of the respective row via the sensing circuitry to a second compute component and/or switch node in the data path to move a second data value from the second subrow to the second compute component and/or switch node. An operation may be performed (e.g., as directed by a controller) on the first data value from the first subrow using the first compute component and/or switch node substantially simultaneously with movement of the second data value from the second subrow to the second compute component and/or switch node.

In some embodiments, the compute component and/or switch node may be in a logic stripe (e.g., as shown at 409-0, 409-1, . . . , 409-N−1 and described in connection with FIG. 4 and elsewhere herein) associated with the shared I/O line of the data. The array may have a plurality of shared I/O lines for the data path local to the array and each logic stripe may have a plurality of compute components (e.g., as shown at 431-1, 431-2, . . . , 431-Z and described in connection with FIG. 4 and elsewhere herein) and/or a plurality of switch nodes (e.g., as shown at 966-0, 966-1, . . . , 966-M−1 and described in connection with FIGS. 9A and 9B and elsewhere herein). Each of the plurality of compute components and/or switch nodes may be associated with at least one of the plurality of shared I/O lines of the data path. In some embodiments, one of each of the plurality of compute components and/or switch nodes may be associated with a particular one of the plurality of shared I/O lines of the data path.

In various embodiments, each of the plurality of compute components and/or switch nodes may be shifted to another one of the plurality of shared I/O lines of the data path. For example, the number of columns and/or memory cells (e.g., 16,384 columns and/or memory cells, among other possible configurations) of a row (e.g., as shown at 319 and described in connection with FIG. 3 and elsewhere herein) may be multiplexed such that, for example, 16 subrows are obtained by selecting for coupling to, and parallel movement of data values via, the plurality of shared I/O lines (e.g., 1024 individual shared I/O lines) a contiguous plurality of columns and/or memory cells in the row (16 subrows each having 1024 adjacent columns and/or memory cells, as shown in FIG. 4) such that data values from the contiguous memory cells (e.g., 1024 data values) may be moved in parallel. Alternatively or in addition, the number of columns and/or memory cells of the row may be multiplexed, for example, such that the 16 subrows may be obtained by selecting for coupling to, and parallel movement of data values, via the shared I/O lines, every sixteenth column and/or memory cell in the row such that data values from every sixteenth memory cell (e.g., 1024 data values) may be moved in parallel. In some embodiments, the array may be a DRAM array and sensing circuitry used to sense and/or amplify data values in selected memory cells may include a sense amplifier and/or a compute component.

The memory device 120 includes a controller (e.g., as shown at 140 and described in connection with FIGS. 1A-1F and elsewhere herein). Among other functions, the controller 140 may be configured to direct movement of a data value from a row of memory cells (e.g., a selected subrow thereof) in the array to a compute component and/or switch node associated with one of the plurality of shared I/O lines of the data path.

The present disclosure describes enablement of in data path compute operations (e.g., PIM operations, such as AND, OR, refresh, row copy, shift, add, multiply, etc.) and switch operations, as described herein, to be performed on data values stored by memory cells (e.g., when moved to a compute component and/or switch nodes, as described herein) substantially simultaneously with performance of, for example, read and/or write operations on data values from a same bank, a same subarray in the same bank, and/or a same row in the same subarray (e.g., in a DRAM array, among other types of memory arrays). For example, the movement operation may be performed on data values stored in a subrow of memory cells in a row of a subarray substantially simultaneously with performance of, for example, logical operations on the same data values previously moved to a compute component and/or switch node in the data path (e.g., to a selected logic stripe) as directed by a controller and/or a host, as described herein.

Accordingly, when a subrow is activated to be sensed in an array, a plurality of data values stored by memory cells of the subrow (e.g., data values for the entire subrow) may be moved (e.g., copied, transferred, and/or transported) to a corresponding plurality of compute components and/or switch nodes (e.g., that each form at least a portion of a logic stripe 409 in a compute unit, as shown at 460 and described in connection with FIG. 4 and elsewhere herein) in a data path associated with the array. A plurality of shared I/O lines couples the data values to the plurality of compute components and/or switch nodes in the data path. In some embodiments, a plurality of compute components and/or switch nodes of a number of logic stripes in a compute unit may be associated with each bank section of a bank of an array. The compute component and/or switch node associated with a shared I/O may be configured to couple (e.g., directly or indirectly connect, as described herein) to a data path of the shared I/O local to the array. In some embodiments, the compute components 431, switch nodes 966, logic stripes 409, and/or compute units 460 and may further be coupled to a data bus connected to the host 110 off the memory device and/or to a data bus that connects a bank of an array to another bank of an array on the memory device.

The present disclosure describes, in some embodiments, that when a row is sensed, the data values in the row (e.g., the data values from all 16,384 (16K) memory cells in the row) may be moved to be stored (e.g., cached) in a latch component (e.g., a sense amplifier) to be further moved on a shared I/O line to a logic stripe in a compute unit in the data path of the shared I/O that is local to the array. In some embodiments, 2048 (2K) shared I/O lines may be configured as a 2K bit wide shared I/O line. According to some embodiments, a number of cycles for moving the data from a first row in a source location to a second row in a destination location may be determined by dividing a number of columns in the array intersected by a row of memory cells in the array by the 2K bit width of the plurality of shared I/O lines. For example, an array (e.g., a bank, a bank section, or a subarray thereof) may have 16K columns, which may correspond to 16K data values in a row, which when divided by the 2K bit width of the plurality of shared I/O lines intersecting the row may yield eight cycles, each separate cycle being at substantially the same point in time (e.g., in parallel) for movement of each 2K bit fraction of the data in the row such that all 16K data bits in the row are moved after completion of the eight cycles. For example, only one of a plurality (e.g., a subset of eight, as shown in FIG. 3) of the sense amplifiers 306 or the compute components 331 in the sensing circuitry 350 of the source location may be coupled at a time to a respective shared I/O line 355. In embodiments having 16K shared I/O lines, all 16K data bits may be moved in parallel.

In one example, 2K data values may be multiplexed at a time (e.g., in parallel) through 2K shared I/O lines from 2K sense amplifiers of the 16K columns (e.g., digit line pairs) by an eight way multiplexer to 2K compute components and/or switch nodes (e.g., to store and/or process a total of 2K bits) in each logic stripe (e.g., each logic stipe having 2K compute components and/or switch nodes) of a compute unit. In some embodiments, the compute unit may have eight logic stripes to store 2K data values per logic stripe, thereby being capable of storing 16K data values per compute unit that have been moved in eight cycles by the 2K shared I/O lines. In another example, 1K data values may be multiplexed at a time through 1K shared I/O lines from 1K sense amplifiers of the 16K columns by a sixteen way multiplexer to 1K compute components and/or switch nodes (e.g., to store and/or process a total of 1K bits) in a logic stripe (e.g., each logic stipe having 1K compute components) of a compute unit. In some embodiments, the compute unit (e.g., as shown at 460 and described in connection with FIG. 4) may have sixteen (16) logic stripes to store 1K data values per logic stripe, thereby being capable of storing 16K data values per compute unit that have been moved in 16 cycles by the 1K shared I/O lines. For example, each of the 16 logic stripes (e.g., shown at 409-0, 409-1, . . . , 409-N−1 and described in connection with FIG. 4) and the 1K compute components and/or switch nodes in each logic stripe may correspond the a subrow (e.g., shown at 465-1, 465-2, . . . , 465-16 and described in connection with FIG. 4) from which 1K data values are moved (e.g., multiplexed) through respective 1K shared I/O lines.

As such, the memory cells in the bank, the subarray, the row, and/or the subrow from which the data values were moved may be available to perform compute and/or switch operations on other data values stored therein (e.g., by having the original data values moved to a logic stripe in the compute unit in the data path of the shared I/O that is local to the array). In various embodiments, each logic stripe may include a number of a plurality of latches, corresponding to (e.g., the same as or an integer multiple of) the number of compute components and/or switch nodes, to store a plurality of data values moved from another bank, subarray, row, and/or subrow to enable performance of a number of operations (e.g., logical and/or switch operations) on the data values stored by the latches associated with the compute component and/or switch nodes.

Implementations of DRAM architecture for in data path compute operations may perform processing at the sense amplifier and compute component level (e.g., in a logic stripe) and/or switch operations at the latch and switch level. Implementations of the DRAM architecture for in data path compute and/or switch operations may allow only a finite number of memory cells to be connected to the compute components in a logic stripe in the data path of the shared I/O lines (e.g., 1K memory cells as given in one example above). An array may include from around 8K to around 16K columns (pairs of digit lines) and associated sense amplifiers. In some embodiments, for example as shown in FIG. 4, a bank section 423 of an array may be divided into four quadrants and each quadrant may have a plurality of subarrays (e.g., 32 subarrays). Each subarray may have a plurality of rows (e.g., 512 rows) and may be coupled to 16K columns. Each row may, as described herein, may include 16 subrows each having 1K memory cells (e.g., selection of which memory cells constitute the 1K coupled to particular shared I/O lines via sensing circuitry being determined by multiplexing). Embodiments, however, are not limited to this illustrative example.

In some embodiments, a plurality of logic stripes as part of a compute unit may be associated with each quadrant. For example each logic stripe in a compute unit in the data path of the shared I/O lines may be associated with a subarray in each quadrant of a bank. Thus, in the above example, a compute unit in the data path of the shared I/O lines local to the array may have 128 logic stripes (4 quadrants, one logic stripe for each of 32 subarrays per quadrant). Embodiments, however, are not limited to this illustrative example. A bank of memory (e.g., of memory cells in a DRAM array) may, in some embodiments, include 64K rows by 16K columns of DRAM to provide around 1 gigabit of memory.

The present disclosure describes a compute component and/or switch node in a data path of a shared I/O line local to an array that may include a plurality of latches that function as sense amplifiers to store (cache) data values moved (e.g., copied, transferred, and/or transported) from sensing circuitry associated with the array. The compute components and/or switch nodes may be in a plurality of logic stripes in a compute unit in the data path of a plurality of shared I/O lines local to the array such that the plurality of logic stripes each includes a subset of a total number of compute components and/or switch nodes. The compute components 431-1, . . . , 431-Z and/or switch nodes 966-0, . . . , 966-M−1 of logic stripes 409-0, . . . , 409-N−1 (e.g., as shown and described in connection with FIGS. 4 and 9A and 9B, respectively) may have a pitch equal to the pitch of the data path of the plurality of shared I/O lines 455 local to a bank 121-1 of the array. In some embodiments, the pitch of the data path of the plurality of shared I/O lines 455 may be a function of a pitch of the digit lines of an array of memory cells (e.g., as shown at 205-1 and 205-2 in FIGS. 2 and 305-1 and 305-2 in FIG. 3). The compute components, switch nodes, and/or logic stripes may be coupled to the data path of the plurality of shared I/O lines 455 by sensing circuitry 150 (e.g., sense amplifiers 206 of the sensing circuitry) and/or additional latches 170, as shown in FIG. 1F.

As such, the architecture for in data path compute operations may facilitate movement (e.g., copying, transferring, and/or transporting) of data values stored in a subrow of a row of an array to the compute components, switch nodes, and/or logic stripes in the data path of the plurality of shared I/O lines local to the array. Sensing circuitry 150 having sense amplifiers, which in some embodiments may also include compute components as shown in FIG. 2, may couple the memory cells from a multiplexed column of memory cells in an array to the compute components, switch nodes, and/or logic stripes in a compute unit in the data path of the plurality of shared I/O lines 455. In this manner, the compute components, switch nodes, and/or logic stripes may be indirectly coupled to the memory cells of a column through the plurality of shared I/O lines 455 via column select circuitry operating as a multiplexer (e.g., as shown at 358 and described in connection with FIG. 3) and associated select logic (as discussed in connection with FIGS. 3-9).

The memory array architecture may provide a number of benefits in addition to those just described. Overall processing speed may be increased by, for example, enabling logical operations and/or switch operations to be performed on data stored by memory cells in parallel with performance of other operations (e.g., performance of DDR4 I/O operations). For example, the logical operations and/or switch operations may be performed in a compute unit having a plurality of compute components 431-1, . . . , 431-Z, switch nodes 966-0, . . . , 966-M−1, and/or logic stripes 409-0, . . . , 409-N−1 in the data path of the shared I/O lines 455 local to the array. By way of example and not by way of limitation, once data values are loaded to the plurality of compute components, switch nodes and/or logic stripes in the compute unit from the subrows of the array, compute operations may be controlled in the compute unit at speeds of 2 ns without having to move the data values back into the rows, as compared to an example time required to fire the rows in the array of 60 ns. In this manner, the compute components, switch nodes, and/or logic stripes (along with associated latches) may provide storage of the moved data values for performance of certain functions (e.g., AND, OR, NOR, XOR, add, subtract, multiply, divide, switch operations, etc.) while the original data values of a subrow may be saved back to a row, saved elsewhere, and/or written over. As discussed more in connection with FIGS. 5 and 6 the operations of the compute components, switch nodes, and/or logic stripes in the compute unit in the data path of the plurality of shared I/O lines may be directed by a controller 140 of a bank 121.

In the embodiment of FIG. 4, a bank section 423 (e.g., having a plurality of bank quadrants) is shown having a plurality of subarrays 425-1, . . . , 425-32 per quadrant. In FIG. 4, 32 subarrays are illustrated in bank quadrant 1. However, embodiments are not limited to this example. This example shows a bank section 423 as having 16K columns, which may be multiplexed (e.g., via the column select circuitry shown at 358-1 and 358-2 and described in connection with FIG. 3) by 16 subrows 465-1, . . . , 465-16 per row to the shared I/O lines 455. In some embodiments, every sixteenth column, and a coupled memory cell, may provide a data value that may be moved as a subrow to the compute unit 460 as a group of 1K bits in parallel. Alternatively or in addition, a contiguous 1K columns, and coupled memory cells, may provide 1K data values that may be moved as a subrow to the compute unit 460 as a group of 1K bits in parallel. In either embodiment, among other potential embodiments, the groups of 1K bits may be moved sequentially in 16 cycles through the shared I/O lines 455 to 1K designated compute components 431-1, . . . , 431-Z and/or switch nodes 966-0, . . . , 966-M−1 of 16 designated logic stripes 409-0, . . . , 409-N−1.

For example, a bit from a first sense amplifier and/or memory cell in a sequence of the first subrow 465-1 may be directed (e.g., by the controller 140) for storage by a first compute component 431-1 and/or a first switch node 966-0, or an associated latch, in the sequence of compute components in the first logic stripe 409-0. A bit from a second sense amplifier and/or memory cell in the sequence of the first subrow 465-1 may be directed for storage by a second compute component 431-2 and/or a second switch node 966-1, or an associated latch, in the sequence of compute components and/or switch nodes in the first logic stripe 409-0. Further, a bit from a first sense amplifier and/or memory cell in a sequence of the second subrow 465-2 may be directed for storage by a first compute component 431-1 and/or a first switch node 966-0, or an associated latch, in the sequence of compute components in the second logic stripe 409-1. A bit from a second sense amplifier and/or memory cell in the sequence of the second subrow 465-2 may be directed for storage by a second compute component and/or a second switch node, or an associated latch, in the sequence of compute components in the second logic stripe 409-1. Bits corresponding to each sense amplifier and/or memory cell in the sequence of subrows 465-2465-1, . . . , 465-16 per row may similarly be designated for storage by a corresponding compute component and/or switch node, or an associated latch, in the sequence in the sequence of logic stripes 409-0, . . . , 409-N−1 (e.g., data values from subrow 465-1 are moved to logic stripe 409-0, data values from subrow 465-2 are moved to logic stripe 409-1, etc.). Movement may be directed to a designated logic stripe via the shared I/O lines 455, which may provide a 1K bit wide data path to the compute unit 460.

In the example of FIG. 4, each logic stripe 409-0, . . . , 409-N−1 may have a plurality of compute components 431-1, . . . , 431-Z as compute components 231 have been described herein in connection with the sensing circuitry 250 of FIG. 2. In some embodiments, each of the plurality of logic stripes 409-0, . . . , 409-N−1 may be configured to perform a compute function using the plurality of compute components 431-1, . . . , 431-Z. In some embodiments, each of the plurality of logic stripes 409-0, . . . , 424-Z may perform a different logical operation using the plurality of compute components 431-1, . . . , 431-Z. For example, at least one of the plurality of logic stripes 409-0, . . . , 409-N−1 may be configured to perform an AND operation and at least one of the plurality of logic stripes 409-0, . . . , 409-N−1 may be configured to perform a NOR operation, among various combinations and/or sequences of logical operations.

In some embodiments, the controller 140 (FIG. 1A) associated with the bank section may execute microcode instructions to direct movement of the 1K data values in parallel from a corresponding 1K multiplexed columns in connection with a particular accessed subrow among the plurality of subarrays 425-1, . . . , 425-32 to a particular compute component 431-1, . . . , 431-Z and/or a and/or a particular switch node 966-0, . . . , 966-M−1 of a particular logic stripe 409-0, . . . , 409-N−1 in the compute unit 460.

In some embodiments, the shared I/O lines may be used to connect the 1K data values to a respective one of the plurality of compute components 431-1, . . . , 431-Z and/or switch nodes 966-0, . . . , 966-M−1 in a respective one of the plurality of logic stripes 409-0, . . . , 409-N−1. By way of example and not by way of limitation, 1K bits of the data values may be moved in parallel to a particular logic stripe associated with each subrow. In various embodiments, there may, for example, be a compute unit 460 associated with each of the 32 subarrays 425-1, . . . , 425-32 in each of 4 quadrants of a bank section 423 or compute units may be shared between various combinations of the subarrays, quadrants, and/or bank sections. Data values loaded to the plurality of compute components 431-1, . . . , 431-Z and/or switch nodes 966-0, . . . , 966-M−1 in the logic stripes 409-0, . . . , 409-N−1 of the compute unit 460 may be operated on according to microcode instructions from the controller 140 (FIG. 1A) to perform operations (e.g., AND, OR, NOR, XOR, add, subtract, multiply, divide, switch, etc.) on the data values as the same have been described herein in connection with the sensing circuitry 250 of FIG. 2 and elsewhere herein.

As described herein, for example, once the 1K data values of a first subrow 465-1 are moved (e.g., loaded) to a first logic stripe 409-0 of the compute unit 460, compute and/or switch operations may be initiated on such data values before and/or substantially simultaneously with data values from a second subrow 465-2 being moved to a second logic stripe 409-1 of the compute unit 460. Such operations performed in the logic stripe of the compute unit may be controlled much faster (e.g., at speeds of approximately 2 ns) according to microcode instructions executed by the controller 140 (FIG. 1A) without having to move the data values back into the rows of the array 130 (FIG. 1A). For example, compute operations may be performed using the compute unit 460 at a much faster speed as compared to an example time (e.g., approximately 60 ns) that may be required to fire and access rows in the array 130 (FIG. 1A). As described in connection with FIG. 2, connection circuitry 232-1 and 232-2 may enable movement of sensed, stored, and/or data values of a logic stripe on which an operation has been performed between logic stripes without movement via a shared I/O line.

Accordingly, a memory device 120 may include, in various embodiments, a plurality of I/O lines shared as a data path for in data path compute operations associated with an array 130 of memory cells. The plurality of shared I/O lines may selectably couple a first subrow (e.g., 465-1) of a row of the array via the sensing circuitry (e.g., 350) to a first compute component (e.g., 431-1) and/or a first switch node (e.g., 966-0) in the data path to move a first data value from the first subrow to the first compute component and/or the first switch node. The plurality of shared I/O lines may selectably couple a second subrow (e.g., 465-2) of the respective row via the sensing circuitry to a second compute component and/or switch node (e.g., corresponding to the position of the first compute component and/or switch node in the first logic stripe) in the data path to move a second data value from the second subrow to the second compute component and/or switch node. For example, the first logic stripe (e.g., 409-0) may include the first compute component and/or the first switch node and a second logic stripe (e.g., 409-1) may include the second compute component and/or the second switch node. As described herein, an operation may be performed on the first data value from the first subrow using the first compute component substantially simultaneously with movement of the second data value from the second subrow to the second compute component.

In various embodiments, the data path may further include the first logic stripe (e.g., 409-0) that may include a number of a plurality of first compute components and/or first switch nodes that corresponds to a number of a plurality of memory cells (not shown) of the first subrow (e.g., 465-1) and the second logic stripe (e.g., 409-1) that may include a number of a plurality of second compute components and/or switch nodes that corresponds to a number of a plurality of memory cells of the second subrow (e.g., 465-2). A number of a plurality of logic stripes (e.g., 409-0, . . . , 424N) may correspond to a number of a plurality of subrows (e.g., 465-1, . . . , 465-16) of the respective row. A compute unit (e.g., 460) may include a plurality of logic stripes (e.g., 409-0, . . . , 424N) that may each include a plurality of compute components (e.g., 431-1, . . . , 431-Z) and/or switch nodes (e.g., 966-0, . . . , 966-M−1), where each of the plurality of compute components may be associated with (e.g., selectably coupled to) at least one of the plurality of shared I/O lines 455 local to the array. A number of the plurality of shared I/O lines may correspond to a number of a plurality of memory cells of a subrow of the respective row (e.g., an individual shared I/O line for every 8 or 16 memory cells and/or columns of the subrow or row, among other possible configurations). A logic stripe (e.g., 409-0) may include a number of a plurality of compute components and/or switch nodes that corresponds to the number of the plurality of memory cells of the subrow coupled to a respective logic stripe.

FIG. 5 is a block diagram illustrating an example of a controller 540 of a memory device 520 in accordance with a number of embodiments of the present disclosure. In some implementations, the block diagram of FIG. 5 provides greater detail of a portion of one example of a PIM capable device such as memory device 120 in FIG. 1A. In the example of FIG. 5, a controller 540-0, . . . , 540-7 (referred to generally as controller 540) may be associated with each bank 521-0, . . . , 521-7 (referred to generally as bank 521) to the PIM capable device 520. Eight banks are shown in the example of FIG. 5. However, embodiments are not limited to this example number. Controller 540 may, for example, represent controller 140 shown in FIG. 1A and elsewhere herein. Each bank may include one or more arrays of memory cells (not shown). For example, each bank may include one or more arrays such as array 130 in FIG. 1A and may include decoders, other circuitry, and/or registers, as shown in FIG. 1A. In the example memory device 520 shown in FIG. 5, controllers 540-0, . . . , 540-7 are shown as having control logic 531-0, . . . , 531-7, sequencers 532-0, . . . , 532-7, and timing circuitry 533-0, . . . , 533-7 as part of a controller 540 on one or more memory banks 521 of a memory device 520. The PIM capable device 520 may represent part of memory device 120 shown in FIG. 1A.

As shown in FIG. 5, the memory device 520 may include a high speed interface (HSI) 541 to receive data, addresses, control signals, and/or commands at the PIM capable device 520. In various embodiments, the HSI 541 may be coupled to a bank arbiter 545 associated with the PIM capable device 520. The HSI 541 may be configured to receive commands and/or data from a host (e.g., 110 in FIG. 1A). As shown in FIG. 5, the bank arbiter 545 may be coupled to the plurality of banks 521-0, . . . , 521-7.

The control logic 531-0, . . . , 531-7 in the example shown in FIG. 5 may be in the form of a microcode engine responsible for fetching and executing machine instructions (e.g., microcode instructions) from an array of memory cells (e.g., array 130 in FIG. 1A) that is part of each bank 521-0, . . . , 521-7. The sequencers 532-0, . . . , 532-7 may also be in the form of microcode engines. Alternatively, the control logic 531-0, . . . , 531-7 may be in the form of a very large instruction word (VLIW) type processing resource and the sequencers 532-0, . . . , 532-7, and the timing circuitry 533-0, . . . , 533-7 may be in the form of state machines and transistor circuitry.

The control logic 531-0, . . . , 531-7 may decode microcode instructions into function calls (e.g., microcode function calls (uCODE)) implemented by the sequencers 532-0, . . . , 532-7. FIG. 6 illustrates another embodiment of controller 540, shown as 642 in FIG. 6, which illustrates a more detailed portion of a sequencer according to embodiments of the present disclosure. The microcode function calls may be the operations that the sequencers 532-0, . . . , 532-7 receive and execute to cause the memory device 520 to perform particular logical and/or switch operations (e.g., selected from alternatives of such operations, which may have instructions stored in memory and/or may be enabled by selection of particular application specific integrated circuits, among other possibilities) using the sensing circuitry such as sensing circuitry 150 in FIG. 1A or using the compute components 431-1, . . . , 431-Z and 631-1, . . . , 631-Z of the compute units 460 and 660 shown in FIGS. 4 and 6, respectively, and/or of switch nodes 966-0, . . . , 966-M−1 shown in FIGS. 9A and 9B. The timing circuitry 533-0, . . . , 533-7 may provide timing to coordinate performance of the logical operations by the logic stripes 409-0, . . . , 409-N−1 and 609-0, . . . , 609-N−1 of the compute units 460 and 660 shown in FIGS. 4 and 6, respectively, the switch operations described in connection with FIGS. 9A and 9B, and/or be responsible for providing conflict free access to the arrays, such as array 130 in FIG. 1A.

As described in connection with FIG. 1A, the controllers 540-0, . . . , 540-7 may be coupled to sensing circuitry 150, data switching network 472, compute unit 460/660, and/or additional logic circuitry 713, including cache, buffers, sense amplifiers, extended row address (XRA) latches, and/or registers, associated with arrays of memory cells via control lines and data paths shown in FIG. 5 as 555-0, . . . , 555-7. As such, sensing circuitry 150, compute unit 460/660, and logic 170 shown in FIGS. 1A, 4 and 6 may be associated with the arrays of memory cells 130 (e.g., using shared I/O lines shown at 555-0, . . . , 555-7 in FIG. 5 and/or other I/O circuitry). The controllers 540-0, . . . , 540-7 may control regular DRAM operations for the arrays such as a read, write, copy, and/or erase operations, etc. Additionally, however, microcode instructions retrieved and executed by the control logic 531-0, . . . , 531-7 and the microcode function calls received and executed by the sequencers 532-0, . . . , 532-7 to cause sensing circuitry 150 and/or compute unit 460/660 shown in FIGS. 1A, 4 and 6 to perform additional logical operations such as addition, multiplication, or, as a more specific example, Boolean operations such as an AND, OR, XOR, etc., and/or switch operations, which are different (e.g., more complex) than regular DRAM read and write operations. Hence, in this example memory device 520, microcode instruction execution, logic operations, and/or switch operations may be performed on the banks 521-0, . . . , 521-7 of a PIM capable device.

In various embodiments, the control logic 531-0, . . . , 531-7, sequencers 532-0, . . . , 532-7, and timing circuitry 533-0, . . . , 533-7 may operate to generate sequences of operation cycles for a DRAM array and/or direct the performance of operations (e.g., logical and/or switch operations) on the memory device 520 (e.g., on a bank 521-0, . . . , 521-7 including in a compute unit 460/660 in a data path of the shared I/O lines 455-0, . . . , 455-7). In the PIM capable device example, each sequence may be designed to perform operations, such as a Boolean logic operations AND, OR, XOR, etc., which together achieve a specific function. For example, the sequences of operations may repetitively perform a logical operation for a one (1) bit add in order to calculate a multiple bit sum. In another example, instructions for the sequences of operations may be executed to perform a number of switch operations, among various other types of operations. Each sequence of operations may be fed into a first in/first out (FIFO) buffer coupled to the timing circuitry 533-0, . . . , 533-7 to provide timing coordination with the sensing circuity 150, compute unit 460/660, and/or additional logic circuitry 713 associated with the array of memory cells 130 (e.g., DRAM arrays) shown in FIG. 1A.

In the example PIM capable memory device 520 shown in FIG. 5, the timing circuitry 533-0, . . . , 533-7 may provide timing and may provide conflict free access to the arrays from four (4) FIFO queues and/or may coordinate timing to operations in the compute unit 460/660. In this example, one FIFO queue may support array computation, one for microcode (e.g., Ucode) instruction fetch, one may be for control of the data path related to the shared I/O lines, logic stripes, compute units, connection circuitry, etc., and one for DRAM I/O. Both the control logic 531-0, . . . , 531-7 and the sequencers 532-0, . . . , 532-7 may generate status information, which may be routed back to the bank arbiter 545 via a FIFO interface. The bank arbiter 545 may aggregate this status data and report it back to the host 110, for example, via HSI 541

FIG. 6 is a block diagram illustrating another example of a portion of a controller 642 of a memory device 520 (FIG. 5). The controller 642 is, among other functions, configured to control movement of data values to a compute unit 660, having a plurality of logic stripes 609-0, . . . , 609-N−1, using a shared I/O line 655 in a data path local to an array 130 (FIG. 1A) in accordance with a number of embodiments of the present disclosure. In the example of FIG. 6, the portion of the controller 642 is an example of a sequencer portion of a controller, such as sequencer 532 in FIG. 5.

In the embodiment of FIG. 6, the sequencer portion of the controller 642 may operate on four classes of microcode instruction: array operations, compute component operations, switch node operations, and control operations. As shown at 601, bit values may be provided as part of a subarray mask to identify a particular subarray in a quadrant of a bank section, as described above. At 602-1 and 602-2, A and B address pointers, associated with a primary latch and secondary latch as described in connection with the sensing circuitry 250 of FIG. 2 and shown in more detail as 731 (A) and 706 (B) in FIG. 7, provide pointers to physical addresses for data values in an array 130 (FIG. 1A). At 603, bit values may additionally provide an additional index into the array 130 (FIG. 1A). As shown in the example of FIG. 6, the address pointers 602-1 and 602-2 and index 603 are used to access particular row and sense lines (e.g., to row word lines and bit lines) of an array 130 (FIG. 1A).

The plurality of shared I/O lines 655 described herein may connect the array 130 (FIG. 1A) to the compute unit 660 in a data path of the shared I/O 655 local to the array. Instructions are provided from the controller 642 to the compute unit to load data values from the shared I/O line 655 to a given compute component 631-1, . . . , 631-Z and/or switch node 966-0, . . . , 966-M−1 in a given logic stripe 609-0, . . . , 609-N−1 of the compute unit 660. A mask stripe 641 to the compute unit 660 may enable selecting a sense line and compute component value for reads or writes.

At 604, a condition code from a wired OR logic configuration may provide a bit value result of a wired OR operation with the compute unit 660. At 611 bit values may provide a register address as a pointer to a second register source for compute component operation and/or switch node operation instructions. At 612, bit values may indicate a register index of a logic stripe 609-0, . . . , 609-N−1 of the compute unit 660 together with the register address pointer to a second register source for compute component operation and/or switch node operation instructions 611.

FIG. 7 is a schematic diagram illustrating compute components 731 of a logic stripe (e.g., as shown at 109, 409, and 609 and described in connection with FIGS. 1F, 4, and 6) in accordance with a number of embodiments of the present disclosure. FIG. 7 also is a schematic diagram illustrating compute unit 460/660 circuitry capable of implementing logical operations in accordance with a number of embodiments of the present disclosure.

FIG. 7 shows a latch 706 directly coupled, in some embodiments, to a pair of complementary shared I/O lines 755-1 and 755-2 (e.g., as shown and described in connection with shared I/O line 355 in FIG. 3) and/or logical operation select logic 713, and a compute component 731 coupled to the latch 706 via pass gates 707-1 and 707-2. The latch 706 is shown in FIG. 7 to be directly coupled to the pair of complementary shared I/O lines 755-1 and 755-2 by way of illustration and not by way of limitation. For example, a shared I/O line may be a single shared I/O line 755 or may include the pair of complementary shared I/O lines shown in FIG. 7. Either embodiment of the shared I/O line may, in various embodiments, be selectably and/or directly coupled to the latch 706 to load (e.g., store) a first data value from a first subrow of a first row of an array and/or selectably and/or directly coupled to the compute component 731 to load (e.g., store) a second data value from a second subrow of a second row to enable performance of a logical operation by the compute component 731 using the two stored data values.

In some embodiments, there may be a plurality of latches 706 associated with a compute component 731 such that the latches may, in various embodiments, be selectably, directly, and/or indirectly coupled to the shared I/O line to load a data value to each of the latches, which may then be selectably used (e.g., as directed by a controller) by an associated compute component for performance of a plurality of logical operations (e.g., as determined by the number of latches squared). Hence, pass gates 707-1 and 707-2 may be used in various embodiments to directly and/or indirectly couple the latches 706, compute components 731, and/or logical operation select logic 713 to each other and/or indirectly connect the shared I/O line 755 to the latches 706, compute components 731, and/or logical operation select logic 713.

The latch 706 shown in FIG. 7 may function in a manner analogous to the sense amplifier 206 (e.g., primary latch) shown in and described in connection with FIG. 2 as associated with sensing circuitry 250. The compute component 731 shown in FIG. 7 may function analogous to the compute component 231 (e.g., secondary latch) shown in FIG. 2 as associated with the sensing circuitry 250. The logical operation selection logic 713 shown in FIG. 7 may function analogous to the logical operation selection logic 213 shown in FIG. 2 associated with the sensing circuitry 250. The gates of the pass gates 707-1 and 707-2 may be controlled by a logical operation selection logic 713 signal, (e.g., Pass). For example, an output of the logical operation selection logic 713 may be coupled to the gates of the pass gates 707-1 and 707-2. Further, the compute component 731 may comprise a loadable shift register configured to shift data values left and right.

In the embodiment illustrated in FIG. 7, the compute components 731 may comprise respective stages (e.g., shift cells) of a loadable shift register configured to shift data values left and right. For example, as illustrated in FIG. 7, each compute component 731 (e.g., stage) of the shift register comprises a pair of right-shift transistors 781 and 786, a pair of left-shift transistors 789 and 790, and a pair of inverters 787 and 788. The signals PHASE 1R, PHASE 2R, PHASE 1L, and PHASE 2L may be applied to respective control lines 782, 783, 791 and 792 to enable/disable feedback on the latches of the corresponding compute components 731 in association with performing logical operations and/or shifting data in accordance with embodiments described herein.

The compute unit 460/660 circuitry shown in FIG. 7 shows operation selection logic 713 coupled to a number of logic selection control input control lines, including ISO, TF, TT, FT, and FF. Selection of a logical operation from a plurality of logical operations is determined from the condition of logic selection control signals on the logic selection control input lines, as well as the data values present on the pair of complementary shared I/O lines 755-1 and 755-2 when isolation transistors 750-1 and 750-2 are enabled via an ISO control signal being asserted.

According to various embodiments, the operation selection logic 713 may include four logic selection transistors: logic selection transistor 762 coupled between the gates of the swap transistors 742 and a TF signal control line, logic selection transistor 752 coupled between the gates of the pass gates 707-1 and 707-2 and a TT signal control line, logic selection transistor 754 coupled between the gates of the pass gates 707-1 and 707-2 and a FT signal control line, and logic selection transistor 764 coupled between the gates of the swap transistors 742 and a FF signal control line. Gates of logic selection transistors 762 and 752 are coupled to the true sense line through isolation transistor 750-1 (having a gate coupled to an ISO signal control line). Gates of logic selection transistors 764 and 754 are coupled to the complementary sense line through isolation transistor 750-2 (also having a gate coupled to an ISO signal control line).

Data values present on the pair of complementary shared I/O lines 755-1 and 755-2 may be loaded into the compute component 731 via the pass gates 707-1 and 707-2. The compute component 731 may comprise a loadable shift register. When the pass gates 707-1 and 707-2 are OPEN, data values (“A”) on the pair of complementary shared I/O lines 755-1 and 755-2 are passed to the compute component 731 and thereby loaded into the loadable shift register. The data values on the pair of complementary shared I/O lines 755-1 and 755-2 may be the data value (“B”) stored by the sense amplifier 706 when the sense amplifier is fired. In this example, the logical operation selection logic signal, Pass, is high to OPEN the pass gates 707-1 and 707-2.

The ISO, TF, TT, FT, and FF control signals may operate to select a logical function to implement based on the data value (“B”) in the sense amplifier 706 and the data value (“A”) in the compute component 731. In particular, the ISO, TF, TT, FT, and FF control signals are configured to select the logical function to implement independent from the data value present on the pair of complementary shared I/O lines 755-1 and 755-2 (although the result of the implemented logical operation may be dependent on the data value present on the pair of complementary shared I/O lines 755-1 and 755-2. For example, the ISO, TF, TT, FT, and FF control signals select the logical operation to implement directly since the data value present on the pair of complementary shared I/O lines 755-1 and 755-2 is not passed through logic to operate the gates of the pass gates 707-1 and 707-2.

Additionally, FIG. 7 shows swap transistors 742 configured to swap the orientation of the pair of complementary shared I/O lines 755-1 and 755-2 between the sense amplifier 706 and the compute component 731. When the swap transistors 742 are OPEN, data values on the pair of complementary shared I/O lines 755-1 and 755-2 on the sense amplifier 706 side of the swap transistors 742 are oppositely-coupled to the pair of complementary shared I/O lines 755-1 and 755-2 on the compute component 731 side of the swap transistors 742, and thereby loaded into the loadable shift register of the compute component 731.

The logical operation selection logic 713 signal Pass may be activated (e.g., high) to OPEN the pass gates 707-1 and 707-2 (e.g., conducting) when the ISO control signal line is activated and either the TT control signal is activated (e.g., high) with data value on the true shared I/O line is “1” or the FT control signal is activated (e.g., high) with the data value on the complement shared I/O line is “1.”

The data value on the true shared I/O line being a “1” OPENs logic selection transistors 752 and 762. The data value on the complimentary shared I/O line being a “1” OPENs logic selection transistors 754 and 764. If the ISO control signal or either the respective TT/FT control signal or the data value on the corresponding shared I/O line (e.g., shared I/O line to which the gate of the particular logic selection transistor is coupled) is not high, then the pass gates 707-1 and 707-2 will not be OPENed by a particular logic selection transistor.

The logical operation selection logic signal Pass* may be activated (e.g., high) to OPEN the swap transistors 742 (e.g., conducting) when the ISO control signal line is activated and either the TF control signal is activated (e.g., high) with data value on the true shared I/O line is “1,” or the FF control signal is activated (e.g., high) with the data value on the complement shared I/O line is “1.” If either the respective control signal or the data value on the corresponding shared I/O line (e.g., shared I/O line to which the gate of the particular logic selection transistor is coupled) is not high, then the swap transistors 742 will not be OPENed by a particular logic selection transistor.

The Pass* control signal is not necessarily complementary to the Pass control signal. It is possible for the Pass and Pass* control signals to both be activated or both be deactivated at the same time. However, activation of both the Pass and Pass* control signals at the same time shorts the pair of complementary shared I/O lines together, which may be a disruptive configuration to be avoided.

The compute unit 460/660 circuitry illustrated in FIG. 7 is configured to select one of a plurality of logical operations to implement directly from the four logic selection control signals (e.g., logical operation selection is not dependent on the data value present on the pair of complementary shared I/O lines). Some combinations of the logic selection control signals may cause both the pass gates 707-1 and 707-2 and swap transistors 742 to be OPEN at the same time, which shorts the pair of complementary shared I/O lines 755-1 and 755-2 together. According to a number of embodiments of the present disclosure, the logical operations which may be implemented by the compute unit 460/660 circuitry illustrated in FIG. 7 may be the logical operations summarized in the logic tables shown in FIG. 8.

FIG. 8 is a logic table illustrating selectable logic operation results implemented by compute components 731 and associated circuitry shown in FIG. 7 in accordance with a number of embodiments of the present disclosure. The selectable logic operation results may be implemented by compute unit 460/660 circuitry in a data path of a plurality of shared I/O lines 755-1 and 755-2 shown in FIG. 7. The four logic selection control signals (e.g., TF, TT, FT, and FF), in conjunction with a particular data value present on the complementary shared I/O lines, may be used to select one of plural logical operations to implement involving the starting data values (“A” and “B”) stored by the sense amplifier 706 (e.g., primary latch) and compute component 731 (e.g., secondary latch) of the compute unit 460/660 circuitry. The four control signals, in conjunction with a particular data value present on the complementary shared I/O lines, control the continuity of the pass gates 707-1 and 707-2 and swap transistors 742, which in turn affect the data value in the compute component 731 and/or sense amplifier 706 before/after firing. The capability to selectably control continuity of the swap transistors 742 facilitates implementing logical operations involving inverse data values (e.g., inverse operands and/or inverse result), among others.

Logic Table 8-1 illustrated in FIG. 8 shows a starting data value stored by the compute component 731 (e.g., secondary latch) shown in column A at 844, and a starting data value stored by the latch (e.g., sense amplifier 706 as a primary latch) shown in column B at 845. The other 3 column headings in Logic Table 8-1 refer to the continuity of the pass gates 707-1 and 707-2, and the swap transistors 742, which may respectively be controlled to be OPEN or CLOSED depending on the state of the four logic selection control signals (e.g., TF, TT, FT, and FF), in conjunction with a particular data value present on the pair of complementary shared I/O lines 755-1 and 755-2. The “Not Open” column corresponds to the pass gates 707-1 and 707-2 and the swap transistors 742 both being in a non-conducting condition, the “Open True” corresponds to the pass gates 707-1 and 707-2 being in a conducting condition, and the “Open Invert” corresponds to the swap transistors 742 being in a conducting condition. The configuration corresponding to the pass gates 707-1 and 707-2 and the swap transistors 742 both being in a conducting condition is not reflected in Logic Table 8-1 since this results in the sense lines being shorted together.

Via selective control of the continuity of the pass gates 707-1 and 707-2 and the swap transistors 742, each of the three columns of the upper portion of Logic Table 8-1 may be combined with each of the three columns of the lower portion of Logic Table 8-1 to provide 3×3=9 different result combinations, corresponding to nine different logical operations, as indicated by the various connecting paths shown at 875. The nine different selectable logical operations that may be implemented by the compute unit 460/660 circuitry are summarized in Logic Table 8-2 illustrated in FIG. 8, including AND, OR, NOT, NOT, NAND, NOR, and XOR logical operations.

The columns of Logic Table 8-2 illustrated in FIG. 8 show a heading 880 that includes the state of logic selection control signals. For example, the state of a first logic selection control signal is provided in row 876 of the table 8-2, the state of a second logic selection control signal is provided in row 877 of the table 8-2, the state of a third logic selection control signal is provided in row 878 of the table 8-2, and the state of a fourth logic selection control signal is provided in row 879 of the table 8-2. The particular logical operation corresponding to the results is summarized in row 847 of the table 8-2.

FIGS. 9A and 9B are schematic diagrams illustrating in-memory data switching networks in accordance with a number of embodiments of the present disclosure. The embodiment illustrated in FIG. 9A is intended to illustrate an example of an in-memory data switching network 972-1 implemented as levels 967-0, . . . , 977-N−1. As described herein, the levels may correspond to the logic stripes (e.g., 409-0, . . . , 409-N−1 and 609-0, . . . , 609-N−1 of the compute units 460 and 660 shown in FIGS. 4 and 6) and/or may be levels of the data switching network that may be positioned (e.g., physically) on chip with an array of memory cells (e.g., including subarrays as shown at 125 and/or 126 and described in connection with FIGS. 1B and 1C and elsewhere herein) to which the data switching network may be selectably coupled by the shared I/O lines (e.g., as shown at 372 and described in association with FIG. 3). The number of levels shown in FIG. 9A is shown as six levels by way of example and not by way of limitation. For example, although levels may be a plurality of levels, the actual the number of levels may be 2, 3, 4, . . . , 16, or more, levels, as determined by the intended switch operations to be performed to achieve the intended completed switch operation (e.g., as determined by a selected switch protocol).

Each of the levels 967-0, . . . , 977-N−1 is shown to include a plurality of switch nodes 966-0, . . . , 966-M−1. The number of the plurality of switch nodes 966-0, . . . , 966-M−1 may correspond to a number of memory cells in a row of an array (e.g., 4K, 8K, 16K, etc., memory cells as described in connection with FIGS. 1B and 1C) and/or a number of a plurality memory cells in a subrow of a row (e.g., 1K memory cells as described in connection with FIG. 4). In some embodiments, the number of switch nodes in a level of the data switching network may be reduced. For example, the number of data values moved via a shared I/O line to a first level 967-0 may be reduced via multiplexing data values from the rows and/or subrows (e.g., to one eighth or one sixteenth of the total data values as described in connection with FIG. 3 and elsewhere herein).

Data values moved to a switch node 966 may be stored by a number of latches 970 of the switch node and switch operations may be performed on the stored data values by the switch 963 of the switch node. In some embodiments, there may be a plurality of latches 970 associated with a switch 963 such that the latches may, in various embodiments, be selectably, directly, and/or indirectly coupled to the shared I/O line to load a data value to each of the latches, which may then be selectably used (e.g., as directed by a controller) by an associated switch for performance of a plurality of switch operations (e.g., as determined by the number of latches squared).

In some embodiments, each of the switch nodes in a level may be configured to perform a fixed switch operation. For example, each switch node 966-0, . . . , 966-M−1 in the first level 967-0 may be configured to switch (e.g., via connection circuitry 232 described herein) a received data value to a predetermined position in a second level 967-1 of a plurality (e.g., sequence) of levels 967-0, . . . , 967-N−1 configured to achieve the intended completed switch operation on data values by passage through the designated switch nodes in the sequence of levels. As shown in FIG. 9A, the switch nodes at corresponding positions in each of the levels may, in some embodiments, be configured to move (e.g., switch) a data value to a switch node in a position that is different from a position to which the data value is switched in a preceding and/or succeeding level. When the switch operation is completed, the resulting data values may be stored in their new positions. In various embodiments, the resulting data values may be stored by the latches 970 of the switch nodes in the last level 967-N−1 and/or or the resulting data values may be moved for storage by latches 968-0, . . . , 968-M−1 coupled to the switch nodes in the last level 967-N−1.

In some embodiments, each of the switch nodes in a level may be configured to perform a plurality of movements (e.g., switches) of data values. A controller 140 (e.g., as described in connection with FIGS. 5 and 6 and elsewhere herein) may be configured to send instructions (e.g., via the switching component 171) to the switching nodes 966 to switch a direction of movement of a data value to a first switch node in a next level (e.g., as determined by selection of a first switch protocol) to a different second switch node in the next level (e.g., as determined by selection of a second switch protocol). In various embodiments, the controller 140 may be configured to execute microcode instructions to direct (e.g., enable) performance of particular switch operations by each switch 963 of a switch node 966 in an in-memory data switching network. In various embodiments, the switch 963 of the switch node 966 may be enabled using connection circuitry shown at 232-1 ad 232-2 in FIG. 2, shared I/O lines shown at 555-0, . . . , 555-7 in FIG. 5 and/or other I/O circuitry, such as a multiplexer (not shown). Enabling a particular switch protocol as such may result in predetermined switch operations being performed by each switch node in each level such that movement of each of the data values through the data switching network will follow a predetermined route to achieve an intended completed switch operation of the switch protocol.

In some embodiments, each switch node 966-0, . . . , 966-M−1 itself may be considered a programmable multiplexer. For example, an embodiment consistent with the data switching network 972-1 implemented as levels 967-0, . . . , 977-N−1 (e.g., in a two-dimensional topology, although not so limited) may have a network topology that consists of (k+1)2^k switch nodes. The switch nodes may be arranged in k+1 ranks, each having n=2k switch nodes, where k represents the order of the network. In a data switching network where each level includes, for example, 256 (2⁸) switch nodes (e.g., is 2⁸ bits wide), the depth of the data switching network may be determined by: (8+1)2⁸=2304 switch nodes that may be uniformly distributed in 9 levels (e.g., 2304÷256=9).

For example, each switch node 966-0, . . . , 966-M−1 in the first level 967-0 may be configured to switch a received data value to a plurality of positions in a second level 967-1 of the plurality (e.g., sequence) of levels 967-0, . . . , 967-N−1 depending on which instructions are sent from the switching component 171 to enable a particular switch protocol. Accordingly, passage of the data values through the designated switch nodes in the sequence of levels may be configured to achieve a plurality of switch operations (e.g., a different switch operation in each level) to achieve the intended completed switch operations (e.g., as determined by selection from a plurality of switch protocols).

A memory device 120 may include an array (e.g., bank section of the array shown at 423 including subarrays 425-1, . . . , 425-32 and described in connection with FIG. 4) of memory cells. The memory device 120 may include sensing circuitry selectably coupled to the array of memory cells, where the sensing circuitry may include a sense amplifier. An I/O line (e.g., as shown at 455 and described in connection with FIG. 4) may be shared as a data path for in-memory data switching associated with the array. The shared I/O line 455 may selectably couple the sensing circuitry to a switch node (e.g., as shown at 966-0, . . . , 966-M−1 and described in connection with FIGS. 9A and 9B) in the data path of the shared I/O lines. The memory device 120 may further include a plurality of logic stripes in the data path. The plurality of logic stripes are, for example, shown at 409-0, . . . , 409-N−1 and 609-0, . . . , 609-N−1 and described in connection with FIG. 4 and FIG. 6 and at 967-0, . . . , 967-N−1 and described in connection with FIG. 9A and FIG. 9B. A first logic stripe (e.g., 409-0, 609-0, and/or 967-0) may include, for example, a number of a plurality of first switch nodes (e.g., 1K switch nodes) that corresponds to a number of a plurality of memory cells of a first subrow (e.g., subrow shown at 465-1 and described in connection with FIG. 4) of a row of the array, although embodiments are not limited to the same. For example, the number of switch nodes may differ from the number of memory cells of the subrow (e.g., by multiplexing as described herein).

The memory device 120 may further include a controller (e.g., as shown at 140 and described in connection with FIGS. 1A-1F and FIG. 5 and at 642 and described in connection with FIG. 6) associated with the array. In some embodiments, the controller may be configured to direct movement, via the sensing circuitry, of a first data value from a first subrow of a first row of the array, via the shared I/O line, to a first switch node of the first logic stripe in the data path. The controller may be configured to direct performance of a first switch operation of a switch protocol, using the first switch node, on the first data value from the first subrow. The controller may be further configured to direct movement of a first switched data value, resulting from performance of the first switch operation, from the first logic stripe via connection circuitry to a second switch node of a second logic stripe in the data path.

In some embodiments, the first logic stripe (e.g., 409-0 in FIG. 4) may correspond to a first level (e.g., 967-0 in FIG. 9A and FIG. 9B) of a plurality of levels of an in-memory data switching network 972 for performance of a plurality of switch operations of the switch protocol. The plurality of switch operations may be performed on a data value sequentially by the plurality of levels (e.g., by passage of the data value sequentially through levels 967-0, . . . , 967-N−1). A data value resulting from completion of the performance of the switch protocol on the first data value may be stored by a latch (e.g., as shown at latches 968-0, . . . , 968-M−1 and described in connection with FIG. 9A) coupled to a switch node of a last level (e.g., level 967-M−1) of the in-memory data switching network 972-1.

The controller may be further configured to direct movement, via the shared I/O line, to the array of a data value (e.g., to a memory cell of a row in subarrays 425-1, . . . , 425-32 shown in and described in connection with FIG. 4) resulting from completion of the performance of the switch protocol on the first data value. The result data value may be moved from a latch (e.g., as shown at 968-0, . . . , 968-M−1 and described in connection with FIG. 9A) coupled to a switch node of a last level of the in-memory data switching network.

The controller may be further configured to selectably enable the first switch protocol from a plurality of switch protocols. The first switch protocol may be enabled by execution of instructions sent (e.g., via switching component 171 and instruction described in connection with FIGS. 5 and 6) to a plurality of switch nodes distributed between a plurality of levels of an in-memory data switching network for selectable enablement of performance of the plurality of switch operations of the first switch protocol by the plurality of switch nodes.

In various embodiments, the first logic stripe (e.g., 409-0 in FIG. 4) may further include a number of a plurality of compute components (e.g., as shown at 431-1, . . . , 431Z) that corresponds to the number of the plurality of memory cells of the first subrow (e.g., 465-1) of the row of the array. The controller may be further configured to selectably direct movement, via the shared I/O line, to either a selected compute component for performance of a logical operation (e.g., selected from Boolean operations, among others, as described herein) or a selected switch node for performance of a switch operation, as described herein.

The embodiment illustrated in FIG. 9B is intended to illustrate an example of an in-memory data switching network 972-2 implemented as levels 967-0, . . . , 977-N−1. In some embodiments, the number of levels illustrated in FIG. 9B may correspond to fewer levels than illustrated in FIG. 1A. For example, reversibility of performing the switch operations in the configuration illustrated in FIG. 9B may enable the number of levels to be reduced to a fraction (e.g., ½, ⅓, etc.) of the number of levels utilized in the configuration illustrated in FIG. 9A to achieve the intended completed switch operation.

In some embodiments, the controller 140 (e.g., the switching component 171 thereof) may direct that the switch nodes 966-0, . . . , 966-M−1 in each of levels 967-0, . . . , 966-M−1 (e.g., four levels) are configured (e.g., enabled, programmed, etc.) to perform a first portion 969-1 of a sequence of switch operations. Upon completion of the first portion 969-1 of the sequence, the resulting data values may be stored (e.g., in a corresponding number of latches 968-0, . . . , 968-M−1 coupled to the switch nodes in the last level 967-N−1).

The controller 140 may then direct that the switch nodes 966-0, . . . , 966-M−1 in each of levels 967-0, . . . , 966-M−1 (e.g., four levels) are reconfigured to perform a second portion 969-2 of the sequence of switch operations (e.g., in which the switch operations performed in at least one of the levels differ from the switch operations performed in the first portion 969-1 of the sequence). In some embodiments, the second portion 969-2 of the sequence may be performed by passage of the data values in an opposite direction through the levels compared to passage in the first portion 969-1. Upon completion of the second portion 969-2 of the sequence, the resulting data values may be stored (e.g., in a corresponding number of latches 968-0, . . . , 968-M−1 coupled to the switch nodes in the first level 967-0). In some embodiments, the second portion 969-2 of the sequence may be performed by passage of the data values in the same direction as the passage in the first portion 969-1 by, for example, looping the result data values from the last level 967-N−1 to the first level 967-0.

The number of portions (e.g., 969-1, 969-2, . . . , 969-M) of the sequence of switch operations performed as such is unlimited, which may continuously make the fraction of the sequence performed in each passage smaller. Passing the data values in a plurality of portions though the same levels as such to achieve the intended completed switch operation may reduce the area utilized on the chip for the levels of the in-memory data switch network and/or the cost thereof. In some embodiments, the portions 969 just described may correspond to partitions of an array (e.g., as shown at 128 and described in connection with FIG. 1E) and/or partitions of a compute unit (e.g., partitions of compute units 460 and 660 described in connection with FIGS. 4 and 6, respectively).

Hence, the memory device 120, as just described, may be configured to perform switch operations via the sensing circuitry, the shared I/O line, the connection circuitry, and/or the switch nodes positioned in the data path. The switch operations described herein thereby include operations that differ from operations performed by previous implementations of butterfly networks that are positioned outside the data path (e.g., butterfly networks that include hardware, firmware, and/or software components located at positions other than in the data path described herein).

Accordingly, embodiments described herein provide a method for operating a memory device for in-memory data switching networks that may be performed by execution of non-transitory instructions by a processing resource. As described herein, the method may include performing on a data value, by a first logic stripe (e.g., logic stripe 409-0 shown in and described in connection with FIG. 4 corresponding to first level shown at 967-0 and described in connection with FIG. 9B), a first switch operation of a first subset (e.g., as shown at 969-1 and described in connection with FIG. 9B) of a plurality of switch operations. The data value may have been moved from a memory cell of an array via an I/O shared by the array and the first logic stripe. The method may include sequentially moving the data value, upon which the first subset of the plurality of switch operations is performed, to a last logic stripe (e.g., logic stripe 409-N−1 shown in and described in connection with FIG. 4 corresponding to last level shown at 967-N−1 and described in connection with FIG. 9B) via connection circuitry (e.g., connection circuitry 232 described in connection with FIG. 2) selectably coupling logic stripes from the first logic stripe to the last logic stripe. The method also may include performing a last switch operation of the first subset by the last logic stripe and performing, by the last logic stripe, a first switch operation of a second subset (e.g., as shown at 969-2) of the plurality of switch operations on a data value resulting from completion of performance of the first subset of the plurality of switch operations.

The method may further include completing performance of the second subset of the plurality of switch operations by sequentially moving the data value resulting from completion of performance of the first subset of the plurality of switch operations from the last logic stripe to the first logic stripe. The method may, in some embodiments, further include directing, by the controller, that the switch operation performed by the last logic stripe as the last switch operation of the first subset is different from the first switch operation of the second subset performed by the last logic stripe.

The method may further include storing, by a latch (e.g., as shown at 968-0, . . . , 968-M−1) coupled to a switch node of the last logic stripe (e.g., last level 967-N−1), a data value resulting from performance by the last logic stripe of the last switch operation of the first subset 969-1 and initiating, by the last logic stripe, performance of the first switch operation of the second subset 969-2 of the plurality of switch operations on the stored data value. The method may further include storing, by a latch (e.g., as shown at 968-0, . . . , 968-M−1) coupled to a switch node of the first logic stripe (e.g., first level 967-0), a data value resulting from performance by the first logic stripe of a last switch operation of the second subset 969-2 and moving, via the shared I/O line, the stored data value to the array (e.g., to a memory cell of a row in subarrays 425-1, . . . , 425-32 shown in and described in connection with FIG. 4).

While example embodiments including various combinations and configurations of sensing circuitry, sense amplifiers, compute components, latches, logic stripes, shared I/O lines, column select circuitry, connection circuitry, multiplexers, in-memory data switching networks, levels thereof, switch nodes, switches, etc., have been illustrated and described herein, embodiments of the present disclosure are not limited to those combinations explicitly recited herein. Other combinations and configurations of the sensing circuitry, sense amplifiers, compute components, latches, logic stripes, shared I/O lines, column select circuitry, connection circuitry, multiplexers, in-memory data switching networks, levels thereof, switch nodes, switches, etc., disclosed herein are expressly included within the scope of this disclosure.

Although specific embodiments have been illustrated and described herein, those of ordinary skill in the art will appreciate that an arrangement calculated to achieve the same results may be substituted for the specific embodiments shown. This disclosure is intended to cover adaptations or variations of one or more embodiments of the present disclosure. It is to be understood that the above description has been made in an illustrative fashion, and not a restrictive one. Combination of the above embodiments, and other embodiments not specifically described herein will be apparent to those of skill in the art upon reviewing the above description. The scope of the one or more embodiments of the present disclosure includes other applications in which the above structures and processes are used. Therefore, the scope of one or more embodiments of the present disclosure should be determined with reference to the appended claims, along with the full range of equivalents to which such claims are entitled.

In the foregoing Detailed Description, some features are grouped together in a single embodiment for the purpose of streamlining the disclosure. This method of disclosure is not to be interpreted as reflecting an intention that the disclosed embodiments of the present disclosure have to use more features than are expressly recited in each claim. Rather, as the following claims reflect, inventive subject matter lies in less than all features of a single disclosed embodiment. Thus, the following claims are hereby incorporated into the Detailed Description, with each claim standing on its own as a separate embodiment.

Claims

1. An apparatus, comprising: an array of memory cells;sensing circuitry selectably coupled to the array of memory cells;an input/output (I/O) line shared as a data path for in-memory data switching associated with the array;an in-memory data switching network selectably coupled to the respective shared I/O line, wherein a logical operation is performed on a pair of data values, accessed via the I/O line from the sensing circuitry coupled via a pair of sense lines to a pair of memory cells in the array, using a compute component in the data path to compute a result; anda controller configured to: couple to the in-memory data switching network; anddirect enablement of a switch protocol to; switch a position of a data value in a first level of a sequence of data values moved, via the I/O line, to the in-memory data switching network from the array, wherein the data value is switched to another position in the sequence.

2. The apparatus of claim 1, wherein the controller is configured to direct enablement of the switch protocol to switch the another position of the data value in a second level of the sequence of data values moved, via the I/O line, to the in-memory data switching network from the array.

3. The apparatus of claim 2, wherein the data value is switched to an additional position in the sequence.

4. The apparatus of claim 1, wherein the in-memory data switching network comprises a logic stripe in the data path to receive data values via the I/O line.

5. The apparatus of claim 4, wherein the logic stripe comprises a plurality of switch nodes in the data path.

6. The apparatus of claim 5, wherein each switch node in the data path includes a latch configured to store a data value moved via the I/O line from a different switch node of the plurality of switch nodes in the data path.

7. The apparatus of claim 1, wherein the in-memory data switching network is selectably coupled to: a sense line for corresponding memory cells of the array; andthe I/O line.

8. The apparatus of claim 1, wherein the array of memory cells is an array of dynamic random access memory (DRAM) cells.

9. An apparatus, comprising: an array of memory cells;sensing circuitry selectably coupled to the array of memory cells, the sensing circuitry including a sense amplifier;a plurality of input/output (I/O) lines selectably shared as a data path for in-memory data switching associated with the array;an in-memory data switching network that comprises a plurality of logic stripes in the data path to receive data values via the plurality of I/O lines, each logic stripe comprising a plurality of switch nodes in the data path and each switch node in the data path including a latch configured to store a data value moved via an I/O line from a different switch node in the data path and including a switch;an in-memory data switching network; anda controller configured to direct enablement of a switch protocol of the in-memory data switching network to: switch a position of a data value in a first level of a sequence of data values moved, via the plurality of shared I/O lines, to the in-memory data switching network from the array; andswitch the another position of the data value in a second level of the sequence of data values moved, via the plurality of I/O lines, to the in-memory data switching network from the array, wherein the data value is switched to another position in the sequence.

10. The apparatus of claim 9, wherein the plurality of input/output (I/O) lines are selectably shared as the data path for movement of a data value from a source location to a destination location in the array.

11. The apparatus of claim 10, wherein the source location and the destination location are a first subarray and a second subarray in the array.

12. The apparatus of claim 10, wherein the apparatus is configured to: move a plurality of data values from the source location using a plurality of first sense amplifiers coupled to the respective plurality of shared I/O lines; andmove the plurality of data values to the destination location using a plurality of second sense amplifiers coupled to the respective plurality of shared I/O lines.

13. The apparatus of claim 9, wherein the controller is further configured to selectably couple the respective plurality of shared I/O lines to the in-memory data switching network.

14. The apparatus of claim 9, wherein the in-memory data switching network comprises: a plurality of levels each having a plurality of switch nodes;a switch node including a latch and a switch; andwherein a number of the plurality of switch nodes per level corresponds to a number of a plurality of sense amplifiers coupled to the array.

15. An apparatus, comprising: an array of memory cells;sensing circuitry selectably coupled to the array of memory cells, the sensing circuitry including a sense amplifier;an input/output (I/O) line shared as a data path for in-memory data switching associated with the array, a plurality of logic stripes in the data path, including a first logic stripe comprising a number of a plurality of first switch nodes that corresponds to a number of a plurality of memory cells of a first subrow of a row of the array, wherein each row is a predetermined subset of the memory cells of the row that is configured to store a predetermined number of data values; anda controller associated with the array, the controller configured to: direct performance of a first switch operation of a switch protocol, using a first switch node, on a first data value moved from a first subrow of a first row of the array;direct movement of a first switched data value, resulting from performance of the first switch operation, from the first logic stripe via connection circuitry to a second switch node of a second logic stripe in the data path;direct performance of a second switch operation of the switch protocol, using the second switch node, on the switched first data value; anddirect movement of the first data value that has been switched twice, resulting from the second switch operation, from the second logic stripe via connection circuitry to a third switch node of a third logic stripe in the data path.

16. The apparatus of claim 15, wherein the shared I/O line selectably couples the sensing circuitry to a switch node in the data path of the shared I/O lines.

17. The apparatus of claim 15, wherein the controller is configured to, prior to performance of the first switch operation, direct movement, via the sensing circuitry, of a first data value from the first subrow of the first row of the array, via the shared I/O line, to the first switch node of the first logic stripe in the data path.

18. The apparatus of claim 15, wherein: the apparatus is configured to perform switch operations via the sensing circuitry, the shared I/O line, the connection circuitry, and switch nodes positioned in the data path; andthe switch operations thereby comprising operations that differ from operations performed by a butterfly network positioned outside the data path.

19. The apparatus of claim 15, wherein the first logic stripe corresponds to a first level of a plurality of levels of an in-memory data switching network for performance of a plurality of switch operations of the switch protocol.

20. The apparatus of claim 19, wherein the plurality of switch operations is performed sequentially by the plurality of levels.