"Nearly Ideal Electronic Properties of Sulfide Coated GaAs Surfaces," Applied Physics Letters, E. Yablonovitch et al., 1987, vol. 51, No. 6, pp. 439-441. |
"Electronic Passivation of GaAs Surfaces Through the Formation of Arsenic-Sulfur Bonds," Applied Physics Letters, C. J. Sandroff et al., 1989, vol. 54, No. 4, pp. 362-364. |
"Influence of the Substrate on the Electrical Properties of As.sub.2 S.sub.3 Films", Soviet Physics Semiconductors, 1985, Y. G. Fariver et al., vol. 19, No. 7, pp. 795-797. |
"Monocrystalline Aluminum Ohmic Contact to n-GaAs by H.sub.2 S Adsorption," Applied Physics Letters, J. Massies et al., 1981, vol. 38, No. 9, pp. 693-695. |
"Effects of H.sub.2 S Adsorption on Surface Properties of GaAs {100} Grown In Situ by MBE," Journal of Vacuum Science Technology, J. Massies et al., 1980, vol. 17, No. 5, pp. 1134-1140. |
"Effects of Cations on the Performance of the Photoanode in the n-GaAs/K.sub.2 Se-KOH/C Semiconductor Liquid Junction Solar Cell," Journal of the Electrochemical Society, B. A. Parkinson et al., 1979, vol. 126, No. 6, pp. 954-960. |
"Advances in SQUID Magnetometers," IEEE Transactions on Electron Devices, J. Clarke, 1980, vol. ED-27, No. 10, pp. 1896-1908. |
"Surface Passivation of GaAs," Applied Physics Letters, H. H. Lee et al., 1989, vol. 54, No. 8, pp. 724-726. |
Colclaser, R., Microelectronics: Processing and Device Design, Wiley & Sons, 1980, p. 81. |