Baffle plate for manufacturing semiconductor

Information

  • Patent Grant
  • D694790
  • Patent Number
    D694,790
  • Date Filed
    Monday, March 19, 2012
    12 years ago
  • Date Issued
    Tuesday, December 3, 2013
    10 years ago
  • US Classifications
    Field of Search
    • US
    • D13 182
    • D15 138
    • D15 144
    • D15 199
    • 118 723000
    • 156 345000
    • 156 345360
    • 156 345410
    • 156 345480
    • 204 298060
    • 204 298080
    • 204 298110
    • 204 298340
    • 336 232000
  • International Classifications
    • 1599
    • Term of Grant
      14Years
Abstract
Description


FIG. 1 is a front view of a baffle plate of the present invention.



FIG. 2 is a rear view of the baffle plate of FIG. 1.



FIG. 3 is a top plan view of the baffle plate of FIG. 1.



FIG. 4 is a bottom view of the baffle plate of FIG. 1.



FIG. 5 is a right side view of the baffle plate of FIG. 1.



FIG. 6 is a left view of the baffle plate of FIG. 1.



FIG. 7 is a first perspective view of the baffle plate of FIG. 1.



FIG. 8 is a second perspective view of the baffle plate of FIG. 1; and,



FIG. 9 is a view of the baffle plate of FIG. 1 in use, wherein, for example, in a plasma processing device, gas entering a chamber is ionized, and a wafer is treated by an etching process with ions, and gas is exhausted from the chamber.


The features shown in broken lines depict environmental subject matter only and form no part of the claimed design.


Claims
  • The ornamental design for a baffle plate for manufacturing semiconductor, as shown and described.
Priority Claims (1)
Number Date Country Kind
D2011-021502 Sep 2011 JP national
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Entry
Notice of Allowance, Taiwanese Design Application No. 101301467, dated Jun. 26, 2012.