Claims
- 1. A BiCMOS integrated circuit comprising:
- a bipolar transistor comprising:
- a collector region formed in a first substrate region having a first doping level of a first conductivity type;
- a lightly doped collector region formed in said first substrate region, said lightly doped collector region having a second doping level of said first conductivity type wherein said second doping level is less than said first doping level;
- a base region of a first doping level of a second conductivity type formed in said first substrate region over said lightly doped collector region; and
- an emitter region of a third doping level of said first conductivity type formed in said base region over said lightly doped collector region; and
- a field effect transistor comprising:
- a source region and a drain region formed in a second substrate region wherein said second substrate region has said first conductivity type and said first doping level.
- 2. The bipolar transistor of claim 1 wherein said first conductivity type is n-type conductivity and said second conductivity type is p-type conductivity.
- 3. The bipolar transistor of claim 1 wherein said third doping level of said first conductivity type is greater than said first doping level of said second conductivity type, and wherein said first doping level of said second conductivity type is greater than said first doping level of said first conductivity type.
- 4. The bipolar transistor of claim 3 wherein said first doping level of said first conductivity type is on the order of 1.times.10.sup.17 /cm.sup.3, wherein said second doping level of said first conductivity type is on the order of 1.times.10.sup.16 /cm.sup.3, wherein said third doping level of said first conductivity type is on the order of 1.times.10.sup.20 /cm.sup.3, and wherein said first doping level of said second conductivity type is on the order of 1.times.10.sup.18 /cm.sup.3.
Parent Case Info
This is a divisional of application Ser. No. 08/066,618, filed May 24, 1993, now pending, which is a continuation of application Ser. No. 07/881,309 filed May 7, 1992, abandoned, which is a continuation of application Ser. No. 07/690,103 filed Apr. 23, 1991, abandoned.
US Referenced Citations (20)
Divisions (1)
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Number |
Date |
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Parent |
66618 |
May 1993 |
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Continuations (2)
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Number |
Date |
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881309 |
May 1992 |
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Parent |
690103 |
Apr 1991 |
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