Base region of bipolar transistors

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H01L29/1004

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/1004Base region of bipolar transistors

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor memory device having an electrically floating body tr...
- Patent number 12,185,523
- Issue date Dec 31, 2024
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of manufacture of advanced wafer bonded heterojunction bipo...
- Patent number 12,183,812
- Issue date Dec 31, 2024
- Matthew H. Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with wrap-around extrinsic base
- Patent number 12,142,673
- Issue date Nov 12, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power amplifier modules including semiconductor resistor and tantal...
- Patent number 12,143,077
- Issue date Nov 12, 2024
- Skyworks Solutions, Inc.
- Peter J. Zampardi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistors
- Patent number 12,107,124
- Issue date Oct 1, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with extrinsic base region and method of fabri...
- Patent number 12,107,143
- Issue date Oct 1, 2024
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors and methods of forming the same
- Patent number 12,068,400
- Issue date Aug 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Tsung Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including emitter regions and method of manufa...
- Patent number 12,034,065
- Issue date Jul 9, 2024
- Rohm Co., Ltd.
- Akihiro Hikasa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus including different thermal resistance valu...
- Patent number 12,009,273
- Issue date Jun 11, 2024
- Murata Manufacturing Co., Ltd.
- Atsushi Kurokawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor and power amplifier
- Patent number 11,990,537
- Issue date May 21, 2024
- WIN SEMICONDUCTORS CORP.
- Chih-Yang Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device having electrically floating body transistor
- Patent number 11,985,809
- Issue date May 14, 2024
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Grant
Bipolar transistor and radio-frequency power amplifier module
- Patent number 11,978,786
- Issue date May 7, 2024
- Murata Manufacturing Co., Ltd.
- Isao Obu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell comprising first and second transistors and methods of...
- Patent number 11,974,425
- Issue date Apr 30, 2024
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device having multiple electrostatic discharge (ESD)...
- Patent number 11,961,834
- Issue date Apr 16, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Po-Lin Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial structure and transistor including the same
- Patent number 11,955,518
- Issue date Apr 9, 2024
- Xiamen Sanan Integrated Circuit Co., Ltd.
- Chih-Hung Yen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for making bipolar junction transistors including emitter-b...
- Patent number 11,935,940
- Issue date Mar 19, 2024
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having multiple electrostatic discharge (ESD)...
- Patent number 11,929,363
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Po-Lin Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar junction transistors including emitter-base and base-collec...
- Patent number 11,923,431
- Issue date Mar 5, 2024
- ATOMERA INCORPORATED
- Richard Burton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with segmented emitter contacts
- Patent number 11,923,442
- Issue date Mar 5, 2024
- Texas Instruments Incorporated
- Hiroshi Yasuda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor structures with base having varying horizontal w...
- Patent number 11,916,109
- Issue date Feb 27, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor
- Patent number 11,916,135
- Issue date Feb 27, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Viorel Ontalus
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a defect layer and method of fabrication...
- Patent number 11,901,414
- Issue date Feb 13, 2024
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method for semiconductor device
- Patent number 11,894,426
- Issue date Feb 6, 2024
- Fuji Electric Co., Ltd.
- Takahiro Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system of operating a bi-directional double-base bipolar...
- Patent number 11,888,030
- Issue date Jan 30, 2024
- Ideal Power Inc.
- John Wood
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical devices making use of counterdoped junctions
- Patent number 11,888,079
- Issue date Jan 30, 2024
- Quantum Semiconductor LLC
- Carlos Jorge R. P. Augusto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors
- Patent number 11,881,523
- Issue date Jan 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including transistors having a common base
- Patent number 11,882,707
- Issue date Jan 23, 2024
- STMicroelectro (Rousset) SAS
- Philippe Boivin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors with stress material for improve...
- Patent number 11,876,123
- Issue date Jan 16, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anthony K. Stamper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistors
- Patent number 11,869,958
- Issue date Jan 9, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Judson R. Holt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,869,961
- Issue date Jan 9, 2024
- Fuji Electric Co., Ltd.
- Hiroshi Miyata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE
- Publication number 20250006824
- Publication date Jan 2, 2025
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND SYSTEMS OF OPERATING A DOUBLE-SIDED DOUBLE-BASE BIPOLAR...
- Publication number 20240396546
- Publication date Nov 28, 2024
- IDEAL POWER INC.
- Mudit KHANNA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTORS
- Publication number 20240395869
- Publication date Nov 28, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu CAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS AND METHODS OF FORMING THE SAME
- Publication number 20240363739
- Publication date Oct 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Tsung KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FABRICATING A SI BJT, AND CORRESPONDING DEVICES
- Publication number 20240332405
- Publication date Oct 3, 2024
- NXP B.V.
- Chih Fan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIGE HBT AND METHODS OF MANUFACTURING THE SAME
- Publication number 20240304707
- Publication date Sep 12, 2024
- NXP B.V.
- Johannes Josephus Theodorus Marinus Donkers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Device Having Electrically Floating Body Transistor
- Publication number 20240260252
- Publication date Aug 1, 2024
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS FOR MAKING BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-B...
- Publication number 20240250146
- Publication date Jul 25, 2024
- ATOMERA INCORPORATED
- RICHARD BURTON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING MULTIPLE ELECTROSTATIC DISCHARGE (ESD)...
- Publication number 20240222363
- Publication date Jul 4, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po-Lin PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BASED HIGH VOLTAGE BIPOLAR JUNCTION TRANSISTOR WITH BURIED COL...
- Publication number 20240222476
- Publication date Jul 4, 2024
- IPOWER SEMICONDUCTOR
- HAMZA YILMAZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial Structure And Transistor Including The Same
- Publication number 20240204053
- Publication date Jun 20, 2024
- XIAMEN SANAN INTEGRATED CIRCUIT CO., LTD.
- Chih-Hung YEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH LATERAL BASE LINK REGION
- Publication number 20240204052
- Publication date Jun 20, 2024
- NXP B.V.
- Jay Paul John
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING AN EXTRINSIC BASE REGION WITH A MONOCRY...
- Publication number 20240204086
- Publication date Jun 20, 2024
- NXP B.V.
- Jay Paul John
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A MONOCRYSTALLINE EXTRINSIC BASE AND METH...
- Publication number 20240178304
- Publication date May 30, 2024
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING MULTIPLE ELECTROSTATIC DISCHARGE (ESD)...
- Publication number 20240178216
- Publication date May 30, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Po-Lin PENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR MANUFACTURING METHOD
- Publication number 20240162328
- Publication date May 16, 2024
- STMicroelectronics (Crolles 2) SAS
- Alexis GAUTHIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
- Publication number 20240162294
- Publication date May 16, 2024
- Fuji Electric Co., Ltd.
- Takahiro TAMURA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD
- Publication number 20240162329
- Publication date May 16, 2024
- STMicroelectronics (Crolles 2) SAS
- Alexis GAUTHIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-BASE AND BASE-COLLEC...
- Publication number 20240097003
- Publication date Mar 21, 2024
- ATOMERA INCORPORATED
- RICHARD BURTON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240097015
- Publication date Mar 21, 2024
- Fuji Electric Co., Ltd.
- Ryouichi KAWANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH EXTRINSIC BASE REGION AND METHOD OF FABRI...
- Publication number 20240030308
- Publication date Jan 25, 2024
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction Bipolar Transistor
- Publication number 20240030288
- Publication date Jan 25, 2024
- Nippon Telegraph and Telephone Corporation
- Manabu Mitsuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH STEPPED EMITTER
- Publication number 20240006491
- Publication date Jan 4, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Uppili S. RAGHUNATHAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE
- Publication number 20240006517
- Publication date Jan 4, 2024
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Xinshu Cai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CASCADED BIPOLAR JUNCTION TRANSISTOR AND METHODS OF FORMING THE SAME
- Publication number 20230402532
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Hong-Shyang WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTORS
- Publication number 20230369473
- Publication date Nov 16, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Shesh Mani Pandey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS AND METHODS OF FORMING THE SAME
- Publication number 20230361204
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Tsung KUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTOR
- Publication number 20230352570
- Publication date Nov 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Mark D. Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Memory Device Having an Electrically Floating Body Tr...
- Publication number 20230345700
- Publication date Oct 26, 2023
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREOF
- Publication number 20230343827
- Publication date Oct 26, 2023
- JSAB Technologies (Shenzhen) Ltd.
- Yong LIU
- H01 - BASIC ELECTRIC ELEMENTS

Base region of bipolar transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor memory device having an electrically floating body tr...

Methods of manufacture of advanced wafer bonded heterojunction bipo...

Transistor with wrap-around extrinsic base

Power amplifier modules including semiconductor resistor and tantal...

Bipolar transistors

Semiconductor device with extrinsic base region and method of fabri...

Bipolar junction transistors and methods of forming the same

Semiconductor device including emitter regions and method of manufa...

Semiconductor apparatus including different thermal resistance valu...

Heterojunction bipolar transistor and power amplifier

Memory device having electrically floating body transistor

Bipolar transistor and radio-frequency power amplifier module

Memory cell comprising first and second transistors and methods of...

Semiconductor device having multiple electrostatic discharge (ESD)...

Epitaxial structure and transistor including the same

Methods for making bipolar junction transistors including emitter-b...

Semiconductor device having multiple electrostatic discharge (ESD)...

Bipolar junction transistors including emitter-base and base-collec...

Bipolar transistor with segmented emitter contacts

Bipolar transistor structures with base having varying horizontal w...

Bipolar transistor

Semiconductor device with a defect layer and method of fabrication...

Semiconductor device and manufacturing method for semiconductor device

Method and system of operating a bi-directional double-base bipolar...

Electrical devices making use of counterdoped junctions

Heterojunction bipolar transistors

Integrated circuit including transistors having a common base

Heterojunction bipolar transistors with stress material for improve...

Heterojunction bipolar transistors

Semiconductor device and method of manufacturing semiconductor device

Patents Applicationslast 30 patents

TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE

METHODS AND SYSTEMS OF OPERATING A DOUBLE-SIDED DOUBLE-BASE BIPOLAR...

BIPOLAR TRANSISTORS

BIPOLAR JUNCTION TRANSISTORS AND METHODS OF FORMING THE SAME

METHODS OF FABRICATING A SI BJT, AND CORRESPONDING DEVICES

SIGE HBT AND METHODS OF MANUFACTURING THE SAME

Memory Device Having Electrically Floating Body Transistor

METHODS FOR MAKING BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-B...

SEMICONDUCTOR DEVICE HAVING MULTIPLE ELECTROSTATIC DISCHARGE (ESD)...

WIDE BASED HIGH VOLTAGE BIPOLAR JUNCTION TRANSISTOR WITH BURIED COL...

Epitaxial Structure And Transistor Including The Same

SEMICONDUCTOR DEVICE WITH LATERAL BASE LINK REGION

SEMICONDUCTOR DEVICE HAVING AN EXTRINSIC BASE REGION WITH A MONOCRY...

SEMICONDUCTOR DEVICE WITH A MONOCRYSTALLINE EXTRINSIC BASE AND METH...

SEMICONDUCTOR DEVICE HAVING MULTIPLE ELECTROSTATIC DISCHARGE (ESD)...

TRANSISTOR MANUFACTURING METHOD

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

MANUFACTURING METHOD

BIPOLAR JUNCTION TRANSISTORS INCLUDING EMITTER-BASE AND BASE-COLLEC...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE WITH EXTRINSIC BASE REGION AND METHOD OF FABRI...

Heterojunction Bipolar Transistor

BIPOLAR TRANSISTOR WITH STEPPED EMITTER

TRANSISTOR WITH WRAP-AROUND EXTRINSIC BASE

CASCADED BIPOLAR JUNCTION TRANSISTOR AND METHODS OF FORMING THE SAME

HETEROJUNCTION BIPOLAR TRANSISTORS

BIPOLAR JUNCTION TRANSISTORS AND METHODS OF FORMING THE SAME

BIPOLAR JUNCTION TRANSISTOR

Semiconductor Memory Device Having an Electrically Floating Body Tr...

POWER SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREOF