Claims
- 1. A bidirectional charge horizontal charge transfer device, comprising:
- a charge transfer area formed within a charge;
- first, second, third and fourth poly gates formed over said charge transfer area;
- a first clock signal applied to said first and second poly gates;
- a second clock signal applied to said third and fourth poly gates; and
- biasing means for selectively applying a bias signal either to said first and third poly gates or to said second and fourth poly gates, respectively, so as to selectively change a charge transfer direction.
- 2. A bidirectional horizontal charge transfer device as claimed in claim 1, wherein said charge transfer area is substantially uniform such that no barrier layer is formed in said charge transfer area.
- 3. A bidirectional horizontal charge transfer device as claimed in claim 1, wherein said first clock signal is applied to said first poly gate by a first signal line, and to said second poly gate by a second signal line.
- 4. A bidirectional horizontal charge transfer device as claimed in claim 3, wherein said first signal line includes a first capacitor, and said second signal line includes a second capacitor, the first and second capacitors having a substantially same capacitance.
- 5. A bidirectional horizontal charge transfer device as claimed in claim 3, wherein said second clock signal is applied to said third poly gate by a third signal line, and to said fourth poly gate by a fourth signal line.
- 6. A bidirectional horizontal charge transfer device as claimed in claim 5, wherein said third signal line includes a third capacitor, and said fourth signal 1ine includes a fourth capacitor, the third and fourth capacitors having a substantially same capacitance.
- 7. A bidirectional horizontal charge transfer device as claimed in claim 1, wherein said first and second clock signals have a phase opposite to each other.
- 8. A bidirectional horizontal charge transfer device as claimed in claim 5, wherein said biasing means includes:
- a plurality of voltage input terminals connected to said first and third signal lines for changing a level of said first and second clock signals applied to said first and third poly gates.
- 9. A bidirectional horizontal charge transfer device as claimed in claim 5, wherein said biasing means includes;
- a plurality of voltage input terminals connected to said second and fourth signal lines for changing a level of said first and second clock signals applied to said second and fourth poly gates.
- 10. A bidirectional horizontal charge transfer device as claimed in claim 8, wherein said plurality of voltage input terminals are supplied with the bias signal having a substantially same voltage level.
- 11. A bidirectional horizontal charge transfer device as claimed in claim 9, wherein said plurality of voltage input terminals are supplied with the bias signal having a substantially same voltage level.
- 12. A bidirectional horizontal charge transfer device as claimed in claim 8, wherein the charge transfer direction is oppositely changed by applying the bias signal to said plurality of voltage input terminals.
- 13. A bidirectional horizontal charge transfer device as claimed in claima 9, wherein the charge transfer direction is oppositely changed by applying the bias signal to said plurality of voltage input terminals.
- 14. A bidirectional horizontal charge transfer device as claimed in claim 1, further comprising:
- an insulating layer formed between said first, second, third and fourth poly gates.
Priority Claims (1)
Number |
Date |
Country |
Kind |
96-10070 |
Apr 1996 |
KRX |
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Parent Case Info
This application is a divisional of application Ser. No. 08/689,083, filed on Jul. 30, 1996, now U.S. Pat. No. 5,773,324 the entire contents of which are hereby incorporated by reference.
US Referenced Citations (13)
Divisions (1)
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Number |
Date |
Country |
Parent |
689083 |
Jul 1996 |
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