Two-Phase CCD

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CPC
H01L29/76841

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/76841Two-Phase CCD

Industries

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Patents Grantslast 30 patents

Information Patent Grant
3D CCD-style imaging sensor with rolling readout
- Patent number 9,076,709
- Issue date Jul 7, 2015
- Mesa Imaging AG
- Jonas Felber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-phase charge-coupled device
- Patent number 8,937,341
- Issue date Jan 20, 2015
- STMicrelectronics (Crolles 2) SAS
- François Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multidirectional two-phase charge-coupled device
- Patent number 8,643,063
- Issue date Feb 4, 2014
- STMicroelectronics (Crolles 2) SAS
- François Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge transfer device and method for manufacturing the same
- Patent number 6,380,005
- Issue date Apr 30, 2002
- NEC Corporation
- Yasutaka Nakashiba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge coupled devices
- Patent number 6,218,686
- Issue date Apr 17, 2001
- Samsung Electronics Co. Ltd.
- Jung-Hyun Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-coupled device with potential barrier and charge storage reg...
- Patent number 6,207,981
- Issue date Mar 27, 2001
- NEC Corporation
- Keisuke Hatano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge transfer device and method for manufacturing the same
- Patent number 6,097,044
- Issue date Aug 1, 2000
- NEC Corporation
- Yasutaka Nakashiba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional horizontal charge transfer device
- Patent number 6,078,069
- Issue date Jun 20, 2000
- LG Semicon Co, Ltd.
- Jee Sung Yoon
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge coupled device with a buried channel two-phase driven two-la...
- Patent number 6,011,282
- Issue date Jan 4, 2000
- NEC Corporation
- Yasutaka Nakashiba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge coupled device
- Patent number 5,986,295
- Issue date Nov 16, 1999
- Samsung Electronics Co.
- Jung-hyun Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing an electric charge transfer device
- Patent number 5,943,556
- Issue date Aug 24, 1999
- NEC Corporation
- Keisuke Hatano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge coupled device having two-layer electrodes and method of man...
- Patent number 5,914,506
- Issue date Jun 22, 1999
- NEC Corporation
- Yasutaka Nakashiba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Linear charge-coupled device having improved charge transferring ch...
- Patent number 5,869,853
- Issue date Feb 9, 1999
- LG Semicon Co., Ltd.
- Young-Jun Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional horizontal charge transfer device and method
- Patent number 5,773,324
- Issue date Jun 30, 1998
- Lg Semicon Co., Ltd.
- Jee Sung Yoon
- G11 - INFORMATION STORAGE
Information Patent Grant
Charge transfer device with two-phase two-layered electrode structu...
- Patent number 5,521,405
- Issue date May 28, 1996
- NEC Corporation
- Yasutaka Nakashiba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-transfer device having an improved charge-sensing section
- Patent number 5,438,211
- Issue date Aug 1, 1995
- Kabushiki Kaisha Toshiba
- Nobuo Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal charge coupled device
- Patent number 5,406,101
- Issue date Apr 11, 1995
- Goldstar Electron Co., Ltd.
- Heung J. Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge transfer device
- Patent number 5,385,860
- Issue date Jan 31, 1995
- Sharp Kabushiki Kaisha
- Takashi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making two-phase buried channel planar gate CCD
- Patent number 5,298,448
- Issue date Mar 29, 1994
- Eastman Kodak Company
- Eric G. Stevens
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge transfer device
- Patent number 5,286,987
- Issue date Feb 15, 1994
- Sharp Kabushiki Kaisha
- Takashi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge coupled device (CCD) having high transfer efficiency at low...
- Patent number 5,241,199
- Issue date Aug 31, 1993
- Eastman Kodak Company
- Gilbert A. Hawkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making charge transfer device
- Patent number 5,240,873
- Issue date Aug 31, 1993
- Uya Shinji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid-state CCD imaging device with transfer gap voltage controller
- Patent number 5,210,433
- Issue date May 11, 1993
- Kabushiki Kaisha Toshiba
- Shinji Ohsawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High resolution charge-coupled device (CCD) camera system
- Patent number 5,182,647
- Issue date Jan 26, 1993
- Eastman Kodak Company
- Win-Chyi Chang
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Pseudo bi-phase charge coupled device having narrow channel effect
- Patent number 5,175,602
- Issue date Dec 29, 1992
- Samsung Electronics Co., Ltd.
- Jeong-Hyun Nam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge-coupled device and process of making the device
- Patent number 5,114,833
- Issue date May 19, 1992
- Eastman Kodak Company
- Herbert J. Erhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge transfer device type solid state image sensor having constan...
- Patent number 5,091,922
- Issue date Feb 25, 1992
- NEC Corporation
- Kazuo Uehira
- G11 - INFORMATION STORAGE
Information Patent Grant
Trench structured charge-coupled device
- Patent number 5,065,203
- Issue date Nov 12, 1991
- Tektronix, Inc.
- Kei-Wean C. Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating a BCCD channel with stair-case doping by self...
- Patent number 5,024,963
- Issue date Jun 18, 1991
- Goldstar Electron Co.
- Yong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Charge transfer device
- Patent number 5,019,884
- Issue date May 28, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Masao Yamawaki
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
3D CCD-Style Imaging Sensor with Rolling Readout
- Publication number 20110114821
- Publication date May 19, 2011
- MESA IMAGING AG
- Jonas Felber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIDIRECTIONAL TWO-PHASE CHARGE-COUPLED DEVICE
- Publication number 20100327325
- Publication date Dec 30, 2010
- STMicroelectronics (Crolles 2) SAS
- François Roy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-PHASE CHARGE-COUPLED DEVICE
- Publication number 20100327326
- Publication date Dec 30, 2010
- STMicroelectronics (Crolles 2) SAS
- François Roy
- H01 - BASIC ELECTRIC ELEMENTS

Two-Phase CCD

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

3D CCD-style imaging sensor with rolling readout

Two-phase charge-coupled device

Multidirectional two-phase charge-coupled device

Charge transfer device and method for manufacturing the same

Charge coupled devices

Charge-coupled device with potential barrier and charge storage reg...

Charge transfer device and method for manufacturing the same

Bidirectional horizontal charge transfer device

Charge coupled device with a buried channel two-phase driven two-la...

Charge coupled device

Method for manufacturing an electric charge transfer device

Charge coupled device having two-layer electrodes and method of man...

Linear charge-coupled device having improved charge transferring ch...

Bidirectional horizontal charge transfer device and method

Charge transfer device with two-phase two-layered electrode structu...

Charge-transfer device having an improved charge-sensing section

Horizontal charge coupled device

Charge transfer device

Method of making two-phase buried channel planar gate CCD

Charge transfer device

Charge coupled device (CCD) having high transfer efficiency at low...

Method of making charge transfer device

Solid-state CCD imaging device with transfer gap voltage controller

High resolution charge-coupled device (CCD) camera system

Pseudo bi-phase charge coupled device having narrow channel effect

Charge-coupled device and process of making the device

Charge transfer device type solid state image sensor having constan...

Trench structured charge-coupled device

Method of fabricating a BCCD channel with stair-case doping by self...

Charge transfer device

Patents Applicationslast 30 patents

3D CCD-Style Imaging Sensor with Rolling Readout

MULTIDIRECTIONAL TWO-PHASE CHARGE-COUPLED DEVICE

TWO-PHASE CHARGE-COUPLED DEVICE