Claims
- 1. A buffered substrate for electronic devices comprising:
A A substrate selected from the group consisting of biaxially textured metals, biaxially textured metal alloys, and biaxially textured metal oxides, the substrate having at least one surface; and B a buffer layer deposited epitaxially upon a surface of said substrate, said buffer layer selected from the group consisting of RMnO3, R1−xAxMnO3, and combinations thereof, wherein R comprises an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A comprises an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.
- 2. A buffered substrate for electronic devices comprising:
A A substrate selected from the group consisting of biaxially textured metals, biaxially textured metal alloys, and biaxially textured metal oxides, the substrate having at least one surface; B At least one biaxially textured buffer layer epitaxially deposited upon a surface of said substrate; and C an additional buffer layer deposited epitaxially upon a surface of said biaxially textured buffer layer, said additional buffer layer selected from the group consisting of RMnO3, R1−xAxMnO3, and combinations thereof, wherein R comprises an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A comprises an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.
- 3. A buffered substrate for electronic devices comprising:
A A substrate selected from the group consisting of metals and metal alloys, said substrate having a surface characterized by non-biaxial texture; B At least one biaxially textured buffer layer epitaxially deposited upon a surface of said substrate; and C an additional buffer layer deposited epitaxially upon a surface of said biaxially textured buffer layer, said additional buffer layer selected from the group consisting of RMnO3, R1−xAxMnO3, and combinations thereof, wherein R comprises an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A comprises an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.
- 4. A buffered substrate for electronic devices comprising:
A A single crystal substrate, said substrate having at least one surface; and B a buffer layer deposited epitaxially upon a surface of said single crystal substrate, said buffer layer selected from the group consisting of RMnO3 R1−xAxMnO3, and combinations thereof, wherein R comprises an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A comprises an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.
- 5. An electronic device comprising:
A A substrate selected from the group consisting of biaxially textured metals, biaxially textured metal alloys, and biaxially textured metal oxides, the substrate having at least one surface; B a buffer layer deposited epitaxially upon a surface of said substrate, said buffer layer selected from the group consisting of RMnO3, R1−xAxMnO3, and combinations thereof, wherein R comprises an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A comprises an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra; and, C At least one electronic device deposited upon a surface of said buffer layer, said electronic device being selected from the group consisting of REBa2Cu3O7, a superconductor, a semiconductor, and a ferroelectric material.
- 6. An electronic device comprising:
A A substrate selected from the group consisting of biaxially textured metals, biaxially textured metal alloys, and biaxially textured metal oxides, the substrate having at least one surface; B At least one biaxially textured buffer layer epitaxially deposited upon a surface of said substrate; C an additional buffer layer deposited epitaxially upon a surface of said biaxially textured buffer layer, said additional buffer layer selected from the group consisting of RMnO3, R1−xAxMnO3, and combinations thereof, wherein R comprises an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A comprises an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra; and, D At least one electronic device deposited upon a surface of said additional buffer layer, said electronic device being selected from the group consisting of REBa2Cu3O7, a superconductor, a semiconductor, and a ferroelectric material.
- 7. An electronic device comprising:
A A substrate selected from the group consisting of metals and metal alloys, said substrate having a surface characterized by non-biaxial texture; B At least one biaxially textured buffer layer epitaxially deposited upon a surface of said substrate; C an additional buffer layer deposited epitaxially upon a surface of said biaxially textured buffer layer, said additional buffer layer selected from the group consisting of RMnO3, R1−xAxMnO3, and combinations thereof, wherein R comprises an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A comprises an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra; and, D At least one electronic device deposited upon a surface of said additional buffer layer, said electronic device being selected from the group consisting of REBa2Cu3O7, a superconductor, a semiconductor, and a ferroelectric material.
- 8. An electronic device comprising:
A A single crystal substrate, said substrate having at least one surface; B a buffer layer deposited epitaxially upon a surface of said single crystal substrate, said buffer layer selected from the group consisting of RMnO3 R1−xAxMnO3, and combinations thereof, wherein R comprises an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A comprises an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra; and, C At least one electronic device deposited upon a surface of said buffer layer, said electronic device being selected from the group consisting of REBa2Cu3O7, a superconductor, a semiconductor, and a ferroelectric material.
Government Interests
[0001] This invention was made with Government support under Contract No. DE-AC05-00OR22725 awarded by the United States Department of Energy. The Government has certain rights in the invention.