Epitaxial-layer growth

Industry

CPC
C30B23/02

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B23/00Single-crystal growth by condensing evaporated or sublimed material

Current Industry

C30B23/02Epitaxial-layer growth

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Graphene hybrids for biological and chemical sensing
- Patent number 12,247,923
- Issue date Mar 11, 2025
- The Penn State Research Foundation
- Joshua A. Robinson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a SiC seed crystal for growth of a SiC ingot b...
- Patent number 12,247,319
- Issue date Mar 11, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Multilayer film structure and method for producing same
- Patent number 12,247,297
- Issue date Mar 11, 2025
- Tosoh Corporation
- Yuya Tsuchida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Aluminum nitride single crystals having large crystal augmentation...
- Patent number 12,227,873
- Issue date Feb 18, 2025
- Crystal IS, Inc.
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Structure for producing diamond and method for manufacturing same
- Patent number 12,227,828
- Issue date Feb 18, 2025
- National University Corporation Nagaoka University of Technology
- Hideo Aida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High Sb concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs core-shell-shell...
- Patent number 12,221,719
- Issue date Feb 11, 2025
- North Carolina A&T State University
- Shanthi Iyer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial alkali halide layers for III-V substrate recycling
- Patent number 12,198,924
- Issue date Jan 14, 2025
- Alliance for Sustainable Energy, LLC
- Brelon James May
- B08 - CLEANING
Information Patent Grant
Hybrid pulsed laser deposition of complex oxide thin films made fro...
- Patent number 12,180,610
- Issue date Dec 31, 2024
- Wisconsin Alumni Research Foundation
- Chang-Beom Eom
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optoelectronic device formed on a flexible substrate
- Patent number 12,142,702
- Issue date Nov 12, 2024
- King Abdullah University of Science and Technology
- Xiao Tang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Large dimension silicon carbide single crystalline materials with r...
- Patent number 12,125,701
- Issue date Oct 22, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 12,107,129
- Issue date Oct 1, 2024
- Mitsubishi Chemical Corporation
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate
- Patent number 12,104,278
- Issue date Oct 1, 2024
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Metal oxide film, semiconductor device, and display device
- Patent number 12,098,458
- Issue date Sep 24, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacturing method of semi-insulating single-crystal silicon carb...
- Patent number 12,098,477
- Issue date Sep 24, 2024
- TAISIC MATERIALS CORP.
- Dai-Liang Ma
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon carbide substrate
- Patent number 12,091,772
- Issue date Sep 17, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC composite substrate including biaxially oreinted SiC layer and...
- Patent number 12,080,551
- Issue date Sep 3, 2024
- NGK Insulators, Ltd.
- Risa Miyakaze
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Process for producing a monoocrystalline layer of AlN material by t...
- Patent number 12,071,706
- Issue date Aug 27, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate
- Patent number 12,071,708
- Issue date Aug 27, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vanadium-compensated 4H and 6H single crystals of optical grade, an...
- Patent number 12,060,650
- Issue date Aug 13, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya Zwieback
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Grant
Method of manufacturing a piezoelectric thin film
- Patent number 12,063,023
- Issue date Aug 13, 2024
- WAVELORD CO., LTD.
- Sang Jeong An
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Large diameter silicon carbide wafers
- Patent number 12,054,850
- Issue date Aug 6, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a mechanical vibrator comprising epitaxially g...
- Patent number 12,049,711
- Issue date Jul 30, 2024
- Nippon Telegraph and Telephone Corporation
- Koji Onomitsu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide crystal manufacturing apparatus, control device of...
- Patent number 12,043,918
- Issue date Jul 23, 2024
- Denso Corporation
- Daisuke Uematsu
- G05 - CONTROLLING REGULATING
Information Patent Grant
Nondestructive characterization for crystalline wafers
- Patent number 12,040,355
- Issue date Jul 16, 2024
- Wolfspeed, Inc.
- Robert Tyler Leonard
- C30 - CRYSTAL GROWTH
Information Patent Grant
Laminate substrate, freestanding substrate, method for manufacturin...
- Patent number 12,040,362
- Issue date Jul 16, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hitoshi Noguchi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Fabrication of films having controlled stoichiometry using molecula...
- Patent number 12,037,700
- Issue date Jul 16, 2024
- PSIQUANTUM, CORP.
- Yong Liang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Silicon carbide wafer and method of manufacturing same
- Patent number 12,037,704
- Issue date Jul 16, 2024
- Senic Inc.
- Myung Ok Kyun
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate
- Patent number 12,031,233
- Issue date Jul 9, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC semiconductor substrate, method for manufacturing same, and dev...
- Patent number 12,020,928
- Issue date Jun 25, 2024
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vapor phase epitaxial growth device
- Patent number 12,009,206
- Issue date Jun 11, 2024
- National University Corporation Nagoya University
- Shugo Nitta
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
DEVICE AND METHOD FOR PREPARING SILICON CARBIDE CRYSTAL
- Publication number 20250092564
- Publication date Mar 20, 2025
- TAISIC MATERIALS CORP.
- Dai-Liang MA
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium-Oxide-On-Silicon (GaOxS)
- Publication number 20250087484
- Publication date Mar 13, 2025
- Board of Regents, The University of Texas System
- Alexander A. Demkov
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH DEVICES
- Publication number 20250066948
- Publication date Feb 27, 2025
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
NEUTRON-GENERATING TARGET AND METHOD FOR PRODUCING THE SAME
- Publication number 20250059680
- Publication date Feb 20, 2025
- NGK Insulators, Ltd.
- Satoshi OTA
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Carbide Crystal Growth Device and Quality Control Method
- Publication number 20250027227
- Publication date Jan 23, 2025
- Winsheng Material Technology Co., Ltd.
- Yun-Fu Chen
- C30 - CRYSTAL GROWTH
Information Patent Application
LAMINATED STRUCTURE, ELECTRONIC DEVICE, ELECTRONIC APPARATUS, AND M...
- Publication number 20250011970
- Publication date Jan 9, 2025
- Gaianixx Inc.
- Takeshi Kijima
- C30 - CRYSTAL GROWTH
Information Patent Application
METAL OXIDE FILM, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE
- Publication number 20250011916
- Publication date Jan 9, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH R...
- Publication number 20250006491
- Publication date Jan 2, 2025
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR ACHIEVING UNIFORM CARRIER CONCENTRATION IN EPITAXIAL LAY...
- Publication number 20240405076
- Publication date Dec 5, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing a Bulk SiC Single Crystal with Improved Qualit...
- Publication number 20240392471
- Publication date Nov 28, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...
- Publication number 20240384432
- Publication date Nov 21, 2024
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AN...
- Publication number 20240352617
- Publication date Oct 24, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya ZWIEBACK
- C01 - INORGANIC CHEMISTRY
Information Patent Application
LARGE DIAMETER SILICON CARBIDE WAFERS
- Publication number 20240352622
- Publication date Oct 24, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
NONDESTRUCTIVE CHARACTERIZATION FOR CRYSTALLINE WAFERS
- Publication number 20240332352
- Publication date Oct 3, 2024
- Wolfspeed, Inc.
- Robert Tyler Leonard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAMINATE SUBSTRATE, FREESTANDING SUBSTRATE, METHOD FOR MANUFACTURIN...
- Publication number 20240332362
- Publication date Oct 3, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hitoshi NOGUCHI
- B82 - NANO-TECHNOLOGY
Information Patent Application
SiC CRYSTAL GROWTH APPARATUS AND METHOD
- Publication number 20240328031
- Publication date Oct 3, 2024
- SK Siltron CSS, LLC
- Andrey SOUKHOJAK
- C30 - CRYSTAL GROWTH
Information Patent Application
BISMUTH-BASED CO-CATALYST ARRANGEMENT
- Publication number 20240301573
- Publication date Sep 12, 2024
- The Regents of the University of Michigan
- Zetian Mi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
COMPOSITE SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCT...
- Publication number 20240297069
- Publication date Sep 5, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PREPARING AN ALUMINUM DOPED SILICON CARBIDE CRYSTAL BY P...
- Publication number 20240287705
- Publication date Aug 29, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON-COATED COPPER, SILICON-COATED ANTI...
- Publication number 20240250049
- Publication date Jul 25, 2024
- Pusan National University Industry-University Cooperation Foundation
- Se Young JEONG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
EPITAXIAL NITRIDE FERROELECTRONICS
- Publication number 20240242963
- Publication date Jul 18, 2024
- The Regents of the University of Michigan
- Zetian Mi
- C30 - CRYSTAL GROWTH
Information Patent Application
HYBRID PULSED LASER DEPOSITION OF COMPLEX OXIDE THIN FILMS MADE FRO...
- Publication number 20240229292
- Publication date Jul 11, 2024
- Wisconsin Alumni Research Foundation
- Chang-Beom Eom
- C30 - CRYSTAL GROWTH
Information Patent Application
High Sb Concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs Core-Shell-Shell...
- Publication number 20240218563
- Publication date Jul 4, 2024
- North Carolina A&T State University
- Shanthi Iyer
- C30 - CRYSTAL GROWTH
Information Patent Application
LAYER TRANSFER PROCESS
- Publication number 20240188444
- Publication date Jun 6, 2024
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Florian DUPONT
- C30 - CRYSTAL GROWTH
Information Patent Application
MULTILAYER FILM STRUCTURE AND METHOD FOR PRODUCING SAME
- Publication number 20240158954
- Publication date May 16, 2024
- TOSOH CORPORATION
- Yuya TSUCHIDA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD AND SYSTEM FOR GROWING A LATTICE MATCHED, MULTILAYER, ORGANI...
- Publication number 20240117521
- Publication date Apr 11, 2024
- The Trustees of Princeton University
- Barry Rand
- C30 - CRYSTAL GROWTH
Information Patent Application
Deposition Of Piezoelectric Films
- Publication number 20240114800
- Publication date Apr 4, 2024
- Applied Materials, Inc.
- Vijay Bhan Sharma
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES
Information Patent Application
MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING...
- Publication number 20240105782
- Publication date Mar 28, 2024
- TANKEBLUE SEMICONDUCTOR CO., LTD.
- Yanfang LOU
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Application
WAFER MANUFACTURING METHOD, EPITAXIAL WAFER MANUFACTURING METHOD, A...
- Publication number 20240076799
- Publication date Mar 7, 2024
- SENIC Inc.
- Jong Hwi PARK
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for producing silicon carbide crystal
- Publication number 20240068124
- Publication date Feb 29, 2024
- HERMES-EPITEK CORP.
- CHIH-LUNG LIN
- C30 - CRYSTAL GROWTH

Epitaxial-layer growth

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Graphene hybrids for biological and chemical sensing

Method for producing a SiC seed crystal for growth of a SiC ingot b...

Multilayer film structure and method for producing same

Aluminum nitride single crystals having large crystal augmentation...

Structure for producing diamond and method for manufacturing same

High Sb concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs core-shell-shell...

Epitaxial alkali halide layers for III-V substrate recycling

Hybrid pulsed laser deposition of complex oxide thin films made fro...

Optoelectronic device formed on a flexible substrate

Large dimension silicon carbide single crystalline materials with r...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Silicon carbide substrate

Metal oxide film, semiconductor device, and display device

Manufacturing method of semi-insulating single-crystal silicon carb...

Silicon carbide substrate

SiC composite substrate including biaxially oreinted SiC layer and...

Process for producing a monoocrystalline layer of AlN material by t...

Silicon carbide substrate

Vanadium-compensated 4H and 6H single crystals of optical grade, an...

Method of manufacturing a piezoelectric thin film

Large diameter silicon carbide wafers

Method for producing a mechanical vibrator comprising epitaxially g...

Silicon carbide crystal manufacturing apparatus, control device of...

Nondestructive characterization for crystalline wafers

Laminate substrate, freestanding substrate, method for manufacturin...

Fabrication of films having controlled stoichiometry using molecula...

Silicon carbide wafer and method of manufacturing same

Silicon carbide substrate

SiC semiconductor substrate, method for manufacturing same, and dev...

Vapor phase epitaxial growth device

Patents Applicationslast 30 patents

DEVICE AND METHOD FOR PREPARING SILICON CARBIDE CRYSTAL

Gallium-Oxide-On-Silicon (GaOxS)

CRYSTAL GROWTH DEVICES

NEUTRON-GENERATING TARGET AND METHOD FOR PRODUCING THE SAME

Silicon Carbide Crystal Growth Device and Quality Control Method

LAMINATED STRUCTURE, ELECTRONIC DEVICE, ELECTRONIC APPARATUS, AND M...

METAL OXIDE FILM, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE

LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH R...

METHOD FOR ACHIEVING UNIFORM CARRIER CONCENTRATION IN EPITAXIAL LAY...

Method for Producing a Bulk SiC Single Crystal with Improved Qualit...

STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...

VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AN...

LARGE DIAMETER SILICON CARBIDE WAFERS

NONDESTRUCTIVE CHARACTERIZATION FOR CRYSTALLINE WAFERS

LAMINATE SUBSTRATE, FREESTANDING SUBSTRATE, METHOD FOR MANUFACTURIN...

SiC CRYSTAL GROWTH APPARATUS AND METHOD

BISMUTH-BASED CO-CATALYST ARRANGEMENT

COMPOSITE SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCT...

METHOD FOR PREPARING AN ALUMINUM DOPED SILICON CARBIDE CRYSTAL BY P...

METHOD FOR MANUFACTURING SILICON-COATED COPPER, SILICON-COATED ANTI...

EPITAXIAL NITRIDE FERROELECTRONICS

HYBRID PULSED LASER DEPOSITION OF COMPLEX OXIDE THIN FILMS MADE FRO...

High Sb Concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs Core-Shell-Shell...

LAYER TRANSFER PROCESS

MULTILAYER FILM STRUCTURE AND METHOD FOR PRODUCING SAME

METHOD AND SYSTEM FOR GROWING A LATTICE MATCHED, MULTILAYER, ORGANI...

Deposition Of Piezoelectric Films

MONOCRYSTALLINE SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING...

WAFER MANUFACTURING METHOD, EPITAXIAL WAFER MANUFACTURING METHOD, A...

Apparatus for producing silicon carbide crystal