Epitaxial-layer growth

Industry

CPC
C30B23/02

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Parent Industries

CCHEMISTRY METALLURGY C30Crystal growth C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D... C30B23/00Single-crystal growth by condensing evaporated or sublimed material

Current Industry

C30B23/02Epitaxial-layer growth

Industries

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Patents Grantslast 30 patents

Information Patent Grant
SiC volumetric shapes and methods of forming boules
- Patent number 12,330,948
- Issue date Jun 17, 2025
- Pallidus, Inc.
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Reaction chamber for a deposition reactor with interspace and lower...
- Patent number 12,331,423
- Issue date Jun 17, 2025
- LPE S.P.A.
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacturing device for SiC semiconductor substrate
- Patent number 12,325,930
- Issue date Jun 10, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a layer of textured aluminum nitride
- Patent number 12,329,032
- Issue date Jun 10, 2025
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Stéphane Cadot
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of using sic container
- Patent number 12,320,030
- Issue date Jun 3, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide wafer and method of preparing the same
- Patent number 12,320,033
- Issue date Jun 3, 2025
- SENIC INC.
- Jong Hwi Park
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial growth of aluminum on aluminum-nitride compounds
- Patent number 12,301,195
- Issue date May 13, 2025
- Raytheon Company
- John Andrew Logan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High purity SiOC and SiC, methods compositions and applications
- Patent number 12,291,456
- Issue date May 6, 2025
- Pallidus, Inc.
- Douglas M. Dukes
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods and systems for heating a wide bandgap substrate
- Patent number 12,291,773
- Issue date May 6, 2025
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for manufacturing silicon carbide single cryst...
- Patent number 12,281,410
- Issue date Apr 22, 2025
- Central Research Institute Of Electric Power Industry
- Norihiro Hoshino
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Epitaxial growth of aluminum on aluminum-nitride compounds
- Patent number 12,278,606
- Issue date Apr 15, 2025
- Raytheon Company
- John Andrew Logan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Graphene hybrids for biological and chemical sensing
- Patent number 12,247,923
- Issue date Mar 11, 2025
- The Penn State Research Foundation
- Joshua A. Robinson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a SiC seed crystal for growth of a SiC ingot b...
- Patent number 12,247,319
- Issue date Mar 11, 2025
- Kwansei Gakuin Educational Foundation
- Tadaaki Kaneko
- C30 - CRYSTAL GROWTH
Information Patent Grant
Multilayer film structure and method for producing same
- Patent number 12,247,297
- Issue date Mar 11, 2025
- Tosoh Corporation
- Yuya Tsuchida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Aluminum nitride single crystals having large crystal augmentation...
- Patent number 12,227,873
- Issue date Feb 18, 2025
- Crystal IS, Inc.
- Robert T. Bondokov
- C30 - CRYSTAL GROWTH
Information Patent Grant
Structure for producing diamond and method for manufacturing same
- Patent number 12,227,828
- Issue date Feb 18, 2025
- National University Corporation Nagaoka University of Technology
- Hideo Aida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
High Sb concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs core-shell-shell...
- Patent number 12,221,719
- Issue date Feb 11, 2025
- North Carolina A&T State University
- Shanthi Iyer
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial alkali halide layers for III-V substrate recycling
- Patent number 12,198,924
- Issue date Jan 14, 2025
- Alliance for Sustainable Energy, LLC
- Brelon James May
- B08 - CLEANING
Information Patent Grant
Hybrid pulsed laser deposition of complex oxide thin films made fro...
- Patent number 12,180,610
- Issue date Dec 31, 2024
- Wisconsin Alumni Research Foundation
- Chang-Beom Eom
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optoelectronic device formed on a flexible substrate
- Patent number 12,142,702
- Issue date Nov 12, 2024
- King Abdullah University of Science and Technology
- Xiao Tang
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Large dimension silicon carbide single crystalline materials with r...
- Patent number 12,125,701
- Issue date Oct 22, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 12,107,129
- Issue date Oct 1, 2024
- Mitsubishi Chemical Corporation
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide substrate
- Patent number 12,104,278
- Issue date Oct 1, 2024
- Sumitomo Electric Industries, Ltd.
- Tsubasa Honke
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Metal oxide film, semiconductor device, and display device
- Patent number 12,098,458
- Issue date Sep 24, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei Yamazaki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacturing method of semi-insulating single-crystal silicon carb...
- Patent number 12,098,477
- Issue date Sep 24, 2024
- TAISIC MATERIALS CORP.
- Dai-Liang Ma
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Silicon carbide substrate
- Patent number 12,091,772
- Issue date Sep 17, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC composite substrate including biaxially oreinted SiC layer and...
- Patent number 12,080,551
- Issue date Sep 3, 2024
- NGK Insulators, Ltd.
- Risa Miyakaze
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Process for producing a monoocrystalline layer of AlN material by t...
- Patent number 12,071,706
- Issue date Aug 27, 2024
- Soitec
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide substrate
- Patent number 12,071,708
- Issue date Aug 27, 2024
- Sumitomo Electric Industries, Ltd.
- Kyoko Okita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vanadium-compensated 4H and 6H single crystals of optical grade, an...
- Patent number 12,060,650
- Issue date Aug 13, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya Zwieback
- C04 - CEMENTS CONCRETE ARTIFICIAL STONE CERAMICS REFRACTORIES

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR SUPPRESSING FORMATION OF STACKING FAULT, STRUCTURE PRODU...
- Publication number 20250188643
- Publication date Jun 12, 2025
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR PRODUCING SIC
- Publication number 20250187929
- Publication date Jun 12, 2025
- INDUSTRIEKERAMIK HOCHRHEIN GMBH
- Marco REINGER
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD FOR SINGLE CRYSTAL SEMICONDUCTOR FILM, PRODUCTION...
- Publication number 20250163606
- Publication date May 22, 2025
- Mach Corporation Co., Ltd.
- Goubun AKATSUKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALUMINUM NITRIDE SINGLE CRYSTALS HAVING LARGE CRYSTAL AUGMENTATION...
- Publication number 20250154681
- Publication date May 15, 2025
- Crystal IS, Inc.
- Robert T. BONDOKOV
- C30 - CRYSTAL GROWTH
Information Patent Application
Structure for Producing Diamond and Method for Manufacturing Same
- Publication number 20250146122
- Publication date May 8, 2025
- National University Corporation Nagaoka University of Technology
- Hideo Aida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHODS OF FORMING PEROVSKITE OXIDE MEMBRANES
- Publication number 20250137167
- Publication date May 1, 2025
- Regents of the University of Minnesota
- Bharat Jalan
- C30 - CRYSTAL GROWTH
Information Patent Application
PREPARATION METHOD FOR COMPOSITE SUBSTRATE
- Publication number 20250122644
- Publication date Apr 17, 2025
- TJ INNOVATIVE SEMICONDUCTOR SUBSTRATE TECHNOLOGY CO., LTD.
- Fengwen MU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING FREE-STANDING SINGLE-CRYSTAL MEMBRANE HAVI...
- Publication number 20250109523
- Publication date Apr 3, 2025
- University of Ulsan Foundation for Industry Cooperation
- Tae Heon KIM
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH-QUALITY SiC CRYSTAL, CRYSTAL BAR, SUBSTRATE AND PREPARATION ME...
- Publication number 20250109525
- Publication date Apr 3, 2025
- SICC CO., LTD.
- Chao GAO
- C30 - CRYSTAL GROWTH
Information Patent Application
HIGH-CHARACTERISTIC EPITAXIAL GROWTH SUBSTRATE AND METHOD FOR MANUF...
- Publication number 20250101630
- Publication date Mar 27, 2025
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- C30 - CRYSTAL GROWTH
Information Patent Application
DEVICE AND METHOD FOR PREPARING SILICON CARBIDE CRYSTAL
- Publication number 20250092564
- Publication date Mar 20, 2025
- TAISIC MATERIALS CORP.
- Dai-Liang MA
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium-Oxide-On-Silicon (GaOxS)
- Publication number 20250087484
- Publication date Mar 13, 2025
- Board of Regents, The University of Texas System
- Alexander A. Demkov
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL GROWTH DEVICES
- Publication number 20250066948
- Publication date Feb 27, 2025
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu WANG
- C30 - CRYSTAL GROWTH
Information Patent Application
NEUTRON-GENERATING TARGET AND METHOD FOR PRODUCING THE SAME
- Publication number 20250059680
- Publication date Feb 20, 2025
- NGK Insulators, Ltd.
- Satoshi OTA
- C30 - CRYSTAL GROWTH
Information Patent Application
Silicon Carbide Crystal Growth Device and Quality Control Method
- Publication number 20250027227
- Publication date Jan 23, 2025
- Winsheng Material Technology Co., Ltd.
- Yun-Fu Chen
- C30 - CRYSTAL GROWTH
Information Patent Application
LAMINATED STRUCTURE, ELECTRONIC DEVICE, ELECTRONIC APPARATUS, AND M...
- Publication number 20250011970
- Publication date Jan 9, 2025
- Gaianixx Inc.
- Takeshi Kijima
- C30 - CRYSTAL GROWTH
Information Patent Application
METAL OXIDE FILM, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE
- Publication number 20250011916
- Publication date Jan 9, 2025
- Semiconductor Energy Laboratory Co., Ltd.
- Shunpei YAMAZAKI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH R...
- Publication number 20250006491
- Publication date Jan 2, 2025
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR ACHIEVING UNIFORM CARRIER CONCENTRATION IN EPITAXIAL LAY...
- Publication number 20240405076
- Publication date Dec 5, 2024
- KWANSEI GAKUIN EDUCATIONAL FOUNDATION
- Tadaaki KANEKO
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing a Bulk SiC Single Crystal with Improved Qualit...
- Publication number 20240392471
- Publication date Nov 28, 2024
- SiCrystal GmbH
- Bernhard ECKER
- C30 - CRYSTAL GROWTH
Information Patent Application
STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...
- Publication number 20240384432
- Publication date Nov 21, 2024
- SOITEC
- Bruno Ghyselen
- C30 - CRYSTAL GROWTH
Information Patent Application
VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AN...
- Publication number 20240352617
- Publication date Oct 24, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya ZWIEBACK
- C01 - INORGANIC CHEMISTRY
Information Patent Application
LARGE DIAMETER SILICON CARBIDE WAFERS
- Publication number 20240352622
- Publication date Oct 24, 2024
- Wolfspeed, Inc.
- Yuri Khlebnikov
- C30 - CRYSTAL GROWTH
Information Patent Application
NONDESTRUCTIVE CHARACTERIZATION FOR CRYSTALLINE WAFERS
- Publication number 20240332352
- Publication date Oct 3, 2024
- Wolfspeed, Inc.
- Robert Tyler Leonard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LAMINATE SUBSTRATE, FREESTANDING SUBSTRATE, METHOD FOR MANUFACTURIN...
- Publication number 20240332362
- Publication date Oct 3, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hitoshi NOGUCHI
- B82 - NANO-TECHNOLOGY
Information Patent Application
SiC CRYSTAL GROWTH APPARATUS AND METHOD
- Publication number 20240328031
- Publication date Oct 3, 2024
- SK Siltron CSS, LLC
- Andrey SOUKHOJAK
- C30 - CRYSTAL GROWTH
Information Patent Application
BISMUTH-BASED CO-CATALYST ARRANGEMENT
- Publication number 20240301573
- Publication date Sep 12, 2024
- The Regents of the University of Michigan
- Zetian Mi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
COMPOSITE SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCT...
- Publication number 20240297069
- Publication date Sep 5, 2024
- ENKRIS SEMICONDUCTOR, INC.
- Kai CHENG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PREPARING AN ALUMINUM DOPED SILICON CARBIDE CRYSTAL BY P...
- Publication number 20240287705
- Publication date Aug 29, 2024
- II-VI ADVANCED MATERIALS, LLC
- Ilya Zwieback
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING SILICON-COATED COPPER, SILICON-COATED ANTI...
- Publication number 20240250049
- Publication date Jul 25, 2024
- Pusan National University Industry-University Cooperation Foundation
- Se Young JEONG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Epitaxial-layer growth

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

SiC volumetric shapes and methods of forming boules

Reaction chamber for a deposition reactor with interspace and lower...

Manufacturing device for SiC semiconductor substrate

Method for manufacturing a layer of textured aluminum nitride

Method of using sic container

Silicon carbide wafer and method of preparing the same

Epitaxial growth of aluminum on aluminum-nitride compounds

High purity SiOC and SiC, methods compositions and applications

Methods and systems for heating a wide bandgap substrate

Method and apparatus for manufacturing silicon carbide single cryst...

Epitaxial growth of aluminum on aluminum-nitride compounds

Graphene hybrids for biological and chemical sensing

Method for producing a SiC seed crystal for growth of a SiC ingot b...

Multilayer film structure and method for producing same

Aluminum nitride single crystals having large crystal augmentation...

Structure for producing diamond and method for manufacturing same

High Sb concentration GaAsSb/GaAs(1-x)SbxN/GaAlAs core-shell-shell...

Epitaxial alkali halide layers for III-V substrate recycling

Hybrid pulsed laser deposition of complex oxide thin films made fro...

Optoelectronic device formed on a flexible substrate

Large dimension silicon carbide single crystalline materials with r...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Silicon carbide substrate

Metal oxide film, semiconductor device, and display device

Manufacturing method of semi-insulating single-crystal silicon carb...

Silicon carbide substrate

SiC composite substrate including biaxially oreinted SiC layer and...

Process for producing a monoocrystalline layer of AlN material by t...

Silicon carbide substrate

Vanadium-compensated 4H and 6H single crystals of optical grade, an...

Patents Applicationslast 30 patents

METHOD FOR SUPPRESSING FORMATION OF STACKING FAULT, STRUCTURE PRODU...

METHOD AND APPARATUS FOR PRODUCING SIC

PRODUCTION METHOD FOR SINGLE CRYSTAL SEMICONDUCTOR FILM, PRODUCTION...

ALUMINUM NITRIDE SINGLE CRYSTALS HAVING LARGE CRYSTAL AUGMENTATION...

Structure for Producing Diamond and Method for Manufacturing Same

METHODS OF FORMING PEROVSKITE OXIDE MEMBRANES

PREPARATION METHOD FOR COMPOSITE SUBSTRATE

METHOD FOR MANUFACTURING FREE-STANDING SINGLE-CRYSTAL MEMBRANE HAVI...

HIGH-QUALITY SiC CRYSTAL, CRYSTAL BAR, SUBSTRATE AND PREPARATION ME...

HIGH-CHARACTERISTIC EPITAXIAL GROWTH SUBSTRATE AND METHOD FOR MANUF...

DEVICE AND METHOD FOR PREPARING SILICON CARBIDE CRYSTAL

Gallium-Oxide-On-Silicon (GaOxS)

CRYSTAL GROWTH DEVICES

NEUTRON-GENERATING TARGET AND METHOD FOR PRODUCING THE SAME

Silicon Carbide Crystal Growth Device and Quality Control Method

LAMINATED STRUCTURE, ELECTRONIC DEVICE, ELECTRONIC APPARATUS, AND M...

METAL OXIDE FILM, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE

LARGE DIMENSION SILICON CARBIDE SINGLE CRYSTALLINE MATERIALS WITH R...

METHOD FOR ACHIEVING UNIFORM CARRIER CONCENTRATION IN EPITAXIAL LAY...

Method for Producing a Bulk SiC Single Crystal with Improved Qualit...

STRUCTURE COMPRISING MONOCRYSTALLINE LAYERS OF ALN MATERIAL ON A SU...

VANADIUM-COMPENSATED 4H AND 6H SINGLE CRYSTALS OF OPTICAL GRADE, AN...

LARGE DIAMETER SILICON CARBIDE WAFERS

NONDESTRUCTIVE CHARACTERIZATION FOR CRYSTALLINE WAFERS

LAMINATE SUBSTRATE, FREESTANDING SUBSTRATE, METHOD FOR MANUFACTURIN...

SiC CRYSTAL GROWTH APPARATUS AND METHOD

BISMUTH-BASED CO-CATALYST ARRANGEMENT

COMPOSITE SUBSTRATE AND PREPARATION METHOD THEREOF, AND SEMICONDUCT...

METHOD FOR PREPARING AN ALUMINUM DOPED SILICON CARBIDE CRYSTAL BY P...

METHOD FOR MANUFACTURING SILICON-COATED COPPER, SILICON-COATED ANTI...