This application claims the benefit of Taiwan application Serial No. 98122437, filed Jul. 2, 2009, the subject matter of which is incorporated herein by reference.
1. Field
The invention relates in general to a capacitance measurement circuit and method for measuring a capacitance of an under-test capacitor.
2. Description of the Related Art
Currently, user control interface is implemented by touch control switch such as capacitive switch. When touched by the user, the touch control switch will respond to the user's control command to execute corresponding operations such as the ON/OFF operations.
To further improve the convenience in use, touch panel or display touch panel (having both display and touch control functions) is already provided. The touch panel or the display touch panel responses to the user's input and clicking etc. The touch panel or the display touch panel is used in various electronic devices such as mobile phones for example. The user can operate the electronic device by clicking on the touch panel or the display touch panel and such operation mode is indeed much more user friendly.
When the user operates a capacitive touch panel, a capacitive display touch panel, or a capacitive switch, the capacitance of the under-test (unknown) capacitor therein will change accordingly. Thus, the user's operation (for example, whether the user presses the switch) or the user's touch position on the touch panel or the display touch panel can be detected. However, how to design a capacitance measurement circuit capable of detecting the under-test capacitor so as to improve the performance of the electronic device is a focus of development in the semiconductor industry.
In measurement of the capacitance of the under-test capacitor, the voltage on a storage capacitor is measured, wherein the capacitance of the storage capacitor is already known.
As indicated in
As indicated in
When the under-test capacitor has resistor effect (which can be regarded as the under-test capacitor is serially connected to a resistor), the abovementioned voltage curves will change.
Therefore, examples of the invention provide a capacitance measurement circuit and a method thereof, capable of shortening the measurement time despite the under-test capacitor has resistor effect.
Examples of the invention are directed to a capacitance measurement circuit and a method therefore, capable of shortening the measurement time.
According to a first example of the present invention, a capacitance measuring method for measuring a capacitance of an under-test capacitor is provided. A storage capacitor is pre-charged. Charge transfer is performed between the under-test capacitor and the storage capacitor. Then, the storage capacitor is discharged and charged according to a relationship between a voltage of the storage capacitor and a reference voltage. The capacitance of the under-test capacitor is measured according to the voltage of the storage capacitor.
According to a second example of the present invention, a capacitance measurement circuit for measuring a capacitance of an under-test capacitor is provided. The capacitance measurement circuit includes a storage capacitor, a switch circuit, a voltage detector, a switch controller, and a programmable current source. The switch circuit is coupled to the storage capacitor, a reference voltage and a voltage source. The voltage detector is coupled to the storage capacitor for detecting a voltage of the storage capacitor. The switch controller is coupled to the voltage detector and the switch circuit for controlling the switch circuit. The programmable current source is coupled to the switch circuit. Under control of the switch controller, the reference voltage is coupled to the storage capacitor through the switch circuit to pre-charge the storage capacitor. The under-test capacitor is coupled to the storage capacitor and voltage source for performing charge transfer between the under-test capacitor and the storage capacitor. The programmable current source discharges the storage capacitor according to the relationship between the voltage of the storage capacitor and a reference voltage. The under-test capacitor charges the storage capacitor by charge transfer according to a relationship between the voltage of the storage capacitor and the reference voltage.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosed embodiments, as claimed.
The voltage detection circuit 210 detects a voltage Vdet on the storage capacitor Cs and further transmits the detected voltage Vdet to the switch controller 220 and the back-stage circuit.
The switch controller 220 generates control signals S1-S4 which control the switches SW1-SW4, respectively. Furthermore, the switch controller 220 generates the control signal S4 according to the voltage Vdet detected by the voltage detection circuit 210.
The switches SW1 and SW2 are used in charge transfer between the storage capacitor Cs and the under-test capacitor Cx. The switch SW3 transmits a reference voltage Vref to the storage capacitor Cs. When the switch SW3 is turned on, the storage capacitor Cs is pre-charged to the reference voltage Vref via the switch SW3. The switch SW4 forms a current path between the storage capacitor Cs and the programmable current source PCS. When the switch SW4 is turned on, the storage capacitor Cs can be discharged through the programmable current source PCS. When the switch SW4 is turned off, the electrical charges on the storage capacitor Cs will be accumulated due to charge transfer (from the under-test capacitor Cx) so as to boost the voltage on the storage capacitor Cs.
Referring to
In the first embodiment of the invention, measurement of a capacitance of the under-test capacitor Cx is disclosed below. Referring to
Next, the switch SW3 is turned off; and the switch SW1 and SW2 are alternately turned on for transferring the charges on the under-test capacitor Cx to the storage capacitor Cs. Logic H periods of the control signals S1 and S2 are not overlapped with each other; and charge transfer is performed progressively. At the initial state, the electrical charges on the storage capacitor Cs are 0, and the switch SW1 is used for charging the under-test capacitor Cx to the voltage Vs, and electrical charges Q stored in the under-test capacitor Cx is expressed as formula (1):
Q=Cx×Vs (1)
Next, the switch SW1 is turned off and the switch SW2 is turned on, so as to transfer the electrical charges Q to the storage capacitor Cs. After charge balance, the switch SW2 is turned off; and meanwhile, the voltage Vdet on the storage capacitor Cs is expressed in formula (2).
As the switch SW1 and SW2 are repeatedly turned on/off, the voltage Vdet on the storage capacitor Cs will be continually increased, which is expressed in formula (3).
In formula (3), Vdet (N) denotes the voltage on the storage capacitor Cs after the switches SW1 and SW2 are repeatedly turned on/off for N times, wherein N is a positive integer.
Then, when the voltage Vdet on the storage capacitor Cs is higher than the reference voltage Vref, the switch SW4 will be turned on. Meanwhile, the electrical charges stored in the storage capacitor Cs will be discharged through the programmable current source PCS. Therefore, the voltage Vdet on the storage capacitor Cs starts to step down.
When the voltage Vdet on the storage capacitor Cs is lower than the reference voltage Vref, the switch SW4 will be turned off. Meanwhile, as charge transfer between the under-test capacitor Cx and the storage capacitor Cs still continues, the electrical charges on storage capacitor Cs will be accumulated so as to boost the voltage on the storage capacitor Cs.
The voltage detection circuit 210 outputs the detected voltage Vdet to the back-stage circuit for further processing.
The capacitance of the under-test capacitor Cx affects the timing of the control signal S4 and the waveform of the voltage Vdet. In other words, the capacitance of the under-test capacitor Cx can be determined according to the waveform of the voltage Vdet.
Referring to
Referring to
Referring to
Referring to
Referring to
The above embodiments of the invention can be used in capacitive switches. Further, the above embodiments of the invention can detect whether the capacitive switch is pressed by the user. When the user presses the capacitive switch, a tiny capacitance can be induced. According to the above embodiments of the invention, this tiny induced capacitance can be detected for determining whether the capacitive switch is pressed by the user.
The above embodiments of the invention can be used in touch panels or display touch panels. Further, the above embodiments of the invention can detect a user's touch position on the touch panel or on the display touch panel. The user's touch position on the touch panel or on the display touch panel is related to or induces the inducted capacitance. When the user touches, due to inductive capacitance effect, a tiny capacitance will be inducted on the panel. Different touch positions are related to or induce different inductive capacitances. Such tiny capacitance can be detected by the above embodiments of the invention for determining the touch position.
The capacitance measurement circuit disclosed in the above embodiments of the invention has many advantages exemplified below:
Short measurement time: as the storage capacitor is pre-charged, the voltage of the storage capacitor can be boosted to a reference voltage, so that the measurement time is shorten.
It will be appreciated by those skilled in the art that changes could be made to the disclosed embodiments described above without departing from the broad inventive concept thereof. It is understood, therefore, that the disclosed embodiments are not limited to the particular examples disclosed, but is intended to cover modifications within the spirit and scope of the disclosed embodiments as defined by the claims that follow.
| Number | Date | Country | Kind |
|---|---|---|---|
| 98122437 A | Jul 2009 | TW | national |
| Number | Name | Date | Kind |
|---|---|---|---|
| 2953752 | Porter | Sep 1960 | A |
| 3091762 | Schwertz | May 1963 | A |
| 3559077 | Porter | Jan 1971 | A |
| 4058757 | Welton et al. | Nov 1977 | A |
| 6191723 | Lewis | Feb 2001 | B1 |
| 6212082 | Bailly | Apr 2001 | B1 |
| 6864691 | Palata et al. | Mar 2005 | B2 |
| 6989826 | Kasai | Jan 2006 | B2 |
| 7589538 | Novikov et al. | Sep 2009 | B2 |
| 7880650 | Feddeler et al. | Feb 2011 | B2 |
| 8115747 | Chang et al. | Feb 2012 | B2 |
| 20010022510 | Okamura et al. | Sep 2001 | A1 |
| 20020067632 | Batson et al. | Jun 2002 | A1 |
| 20030142568 | Giove et al. | Jul 2003 | A1 |
| 20080068029 | Tanida et al. | Mar 2008 | A1 |
| 20080169826 | Bartling | Jul 2008 | A1 |
| 20080297175 | Wu | Dec 2008 | A1 |
| 20090278590 | Chang | Nov 2009 | A1 |
| 20090289908 | Chen et al. | Nov 2009 | A1 |
| 20100026233 | Lee et al. | Feb 2010 | A1 |
| 20100141275 | Matsushima | Jun 2010 | A1 |
| 20100185884 | Chen et al. | Jul 2010 | A1 |
| 20100207905 | Chang et al. | Aug 2010 | A1 |
| 20100214255 | Chang et al. | Aug 2010 | A1 |
| 20100253639 | Huang et al. | Oct 2010 | A1 |
| 20100321328 | Chang et al. | Dec 2010 | A1 |
| 20110050255 | Iriarte et al. | Mar 2011 | A1 |
| 20110057899 | Sleeman et al. | Mar 2011 | A1 |
| 20110310025 | Simmons | Dec 2011 | A1 |
| 20120105372 | Chang et al. | May 2012 | A1 |
| 20120268420 | Marhefka et al. | Oct 2012 | A1 |
| 20120268423 | Hotelling et al. | Oct 2012 | A1 |
| 20120268670 | Yamazaki | Oct 2012 | A1 |
| 20120274583 | Haggerty | Nov 2012 | A1 |
| 20120274594 | Prest et al. | Nov 2012 | A1 |
| 20120274595 | Lee et al. | Nov 2012 | A1 |
| 20120274597 | Forstall et al. | Nov 2012 | A1 |
| 20120274605 | Anno | Nov 2012 | A1 |
| 20120280928 | Ludwig | Nov 2012 | A1 |
| Number | Date | Country |
|---|---|---|
| 101063697 | Oct 2007 | CN |
| WO-2009007500 | Jan 2009 | WO |
| Entry |
|---|
| Kiyotake et al., “Single-phase voltage-doubler rectifier using a capacitive energy storage/transfer mechanism”, IEE Proceedings Electric Power Applications, Jan. 2003, pp. 81-87. |
| Ennis et al., “Recent Advances in High Voltage, High Energy Capacitor Technology”, 16th IEEE International Pulsed Power Conference 2007, pp. 282-285. |
| MacDougall et al., “Fast Discharge, High Energy Density Capacitor Performance”, Power Modulator Symposium 2006, p. 196. |
| Shkuratov et al., “Single-Shot, Repetitive, and Lifetime High-Voltage Testing of Capacitors”, IEEE Transactions on Plasma Science, vol. 30, No. 5, Oct. 2002, pp. 1943-1949. |
| Heljestrand et al., “Overstressing of High-Voltage Capacitors”, IEEE Transactions on Plasma Science, vol. 32, No. 3, Jun. 2004, pp. 1337-1343. |
| Number | Date | Country | |
|---|---|---|---|
| 20110001491 A1 | Jan 2011 | US |