This disclosure relates generally to relaxation oscillators, and in particular but not exclusively, relates to a dual coupled relaxation oscillators for use in a capacitance sensor.
Capacitance sensors are used to implement a variety of useful functions including touch sensors (e.g., touch pad, touch dial, touch wheel, etc.), determining the presence of an object, accelerometers, and other functions.
CdV=ICdt (Equation 1)
The relaxation oscillator begins by charging the DUT capacitor from a ground potential or zero voltage and continues to pile charge on the DUT capacitor at a fixed charging current Ic until the voltage across the DUT capacitor reaches a reference voltage (Vref). At Vref, the relaxation oscillator allows the accumulated charge to discharge or the DUT capacitor to “relax” back to the ground potential and then the process repeats itself. The relaxation oscillator outputs a relaxation oscillator clock signal (RO CLK) having a frequency (fRO) dependent upon capacitance C of the DUT capacitor and charging current Ic.
If capacitance C of the DUT capacitor changes, then fRO will change proportionally according to Equation 1. By comparing fRO of RO CLK against the frequency (fREF) of a known reference clock signal (REF CLK), the change in capacitance ΔC can be measured. Accordingly, equations 2 and 3 below describe that a change in frequency between RO CLK and REF CLK is proportional to a change in capacitance of the DUT capacitor.
ΔC∝Δf, where (Equation 2)
Δf=fRO−fREF. (Equation 3)
The frequency comparator is coupled to receive RO CLK and REF CLK, compare their frequencies fRO and fREF, respectively, and output a signal indicative of the difference Δf between these frequencies. By monitoring Δf one can determine whether the capacitance of the DUT capacitor has changed.
However, during the relaxation of the DUT capacitor, the discharge current is not fixed and therefore the relaxation phase generates an error. As frequency fRO of RO CLK is increased (e.g., by increasing charging current Ic) the relaxation error becomes a more significant portion of the overall clock cycle. As such, the relaxation error is a frequency limiting factor that places an upper bound on the operational frequency of capacitance sensor 100. Operating at lower fRO frequencies leaves capacitance sensor 100 more susceptible to low frequency noise. Furthermore, since the frequency fRO of RO CLK is unrelated to the frequency fREF of REF CLK, capacitance sensor 100 is susceptible to frequency wandering due to temperature drift.
Non-limiting and non-exhaustive embodiments of the invention are described with reference to the following figures, wherein like reference numerals refer to like parts throughout the various views unless otherwise specified.
Embodiments of a apparatus and method for are described herein. In the following description numerous specific details are set forth to provide a thorough understanding of the embodiments. One skilled in the relevant art will recognize, however, that the techniques described herein can be practiced without one or more of the specific details, or with other methods, components, materials, etc. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring certain aspects.
Reference throughout this specification to “one embodiment” or “an embodiment” means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, the appearances of the phrases “in one embodiment” or “in an embodiment” in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
The components of capacitance sensor 200 are coupled and interact as follows. REF RO 205 is coupled to a terminal 221 of reference capacitor 220. REF RO 205 generates a drive current ID1 into and out of terminal 221 to reciprocally charge and discharge reference capacitor 220. Since REF RO 205 sources and sinks drive current ID1 to/from reference capacitor 220, the frequency of charging and discharging reference capacitor 220 does not suffer from an upper bound due to a relaxation phase error. DUT RO 210 operates in a similar manner to REF RO 205, except DUT RO 210 is coupled to a terminal 251 of DUT capacitor 250 to reciprocally charge and discharge DUT capacitor 250 with a drive current ID2. During the process of charging and discharging reference capacitor 220, REF RO 205 outputs a clock signal RO1 CLK having a frequency fRO1. RO1 CLK tracks the charging and discharging of reference capacitor 220 and therefore fRO1 is substantially equal to the frequency at which reference capacitor 220 is charged and discharged. Similarly, DUT RO 210 output a clock signal RO2 CLK having a frequency fRO2. RO2 CLK tracks the charging and discharging of DUT capacitor 220 and therefore fRO2 is substantially equal to the frequency at which DUT capacitor 250 is charged and discharged.
Frequency comparator 215 (also referred to as a frequency discriminator) is coupled to REF RO 205 and DUT RO 210 to receive RO1 CLK and RO2 CLK. Frequency comparator 215 outputs a comparison signal (Δf) being indicative of a difference in frequency between fRO1 and fRO2 or indicative of a period difference between RO1 CLK and RO2 CLK. Since frequency and period are inversely related, it should be appreciated determining a frequency difference between RO1 CLK and RO2 CLK is defined herein to include measuring the frequency difference or measuring the period difference. In one embodiment, frequency comparator 215 includes a divider circuit 260 and a N-bit register counter 265. Divider circuit 260 is coupled to receive RO2 CLK from DUT RO 210 and to divide RO2 CLK by 2N to generate 2N pulses 263 for each input pulse 267 of RO2 CLK. N-bit register counter 265 then counts the number of pulses 263 that occur during a single pulse 269 or cycle of RO1 CLK. By selecting N (e.g., N=8), the sensitivity or resolution of capacitance sensor 200 may be adjusted.
As described above in connection with Equation 2, a change in relative frequency is related to the change in capacitance ΔC of DUT capacitor 250. Accordingly, capacitance sensor 200 may be used to sense a capacitance change in DUT capacitor 250. For example, capacitance sensor 200 may be used to implement a user interface, such as a touch pad or touch dial, where the presence or absence of a user's finger on the touch pad/dial alters the capacitance of DUT capacitor 250. Capacitance sensor 200 may further be used to implement other functions including determining the presence of an object, accelerometers, and other capacitance sensing apparatuses. Furthermore, as discussed below, capacitance sensor 200 may be used in test equipment for measuring the absolute capacitance of DUT capacitor 250.
In the illustrated embodiment, comparison signal Δf is coupled into processor 225. Processor 225 may perform various filtering functions on comparison signal Δf and use comparison signal Δf to implement a user interface or other functions.
In one embodiment, processor 225 controls operation of REF RO 205 and DUT RO 210 via a control signal ICTRL output to scaler 230. Control signal ICTRL selects a scaling factor for scaling a reference current IREF received from current source 235 for generating individual reference currents IREF1 and IREF2. Reference currents IREF1 and IREF2 drive REF RO 205 and DUT RO 210, respectively. In one embodiment, control signal ICTRL includes two 8-bit values, one each for selecting IREF1 and IREF2, and scalers 230 and 240 include digital-to-analog converters (“DACs”).
As discussed below, IREF1 and IREF2 may be mirrored by each of REF RO 205 and DUT RO 210, respectively, to generate drive currents ID1 and ID2. It should be appreciated that “mirroring” a reference current IREF1 or IREF2 to generate drive currents ID1 and ID2 means that ID1 and ID2 are related to IREF1 or IREF2 by a multiplying factor k1 or k2, respectively, where k1 or k2 may be greater than, less than, or equal to one. For example, k1 and k2, may be equal to the ratio of the widths and lengths of the transistors used to implement a current mirroring circuit within each of REF RO 205 and DUT RO 210
In one embodiment, IREF1 and IREF2 are identical. In an alternative embodiment, IREF1 and/or IREF2 are independently scalable in response to ICTRL. IREF2 received by DUT RO 210 can be trimmed with respect to IREF1 to compensate for baseline or nominal differences in the capacitances between reference capacitor 220 and DUT capacitor 250. IREF2 received at DUT RO 210 can be trimmed until the frequency fRO2 of RO2 CLK is equal to the frequency fRO1 of RO1 CLK. By measuring the amount of trim or offset between IREF1 and IREF2 when fRO2=fRO1 and knowing the fixed capacitance of reference capacitor 220, capacitance sensor 200 may be used to measure the absolute capacitance C of DUT capacitor 250.
In one embodiment, processor 225 further controls operation of REF RO 205 and DUT RO 210 via a control signal VCTRL output to scaler 240. Scaler 240 scales the reference voltage VREF received from voltage source 245 to generate a low voltage reference VRL and a high voltage reference VRH. Processor 225 may output control signal VCTRL to scaler 240 to independently select low voltage reference VRL and high voltage reference VRH. In one embodiment, control signal VCTRL may represent two 8-bit values, one to control low voltage reference VRL and one to control high voltage reference VRH.
Low voltage reference VRL is used by REF RO 205 and DUT RO 210 to set the low voltage trip point where the oscillators switch between discharging and charging their respective capacitors (i.e., reference capacitor 220 and DUT capacitor 250). High voltage reference VRH is used by REF RO 205 and DUT RO 210 to set the high voltage trip point where the oscillators switch between charging and discharging their respective capacitors. Accordingly, embodiments of capacitance sensor 200 enable processor 225 to select the low-side and high-side voltages between which reference capacitor 220 and DUT capacitor 250 oscillate. Processor 225 can change low voltage reference VRL and high voltage reference VRH to increase or decrease the voltage swings on reference capacitor 220 and DUT capacitor 250 and/or translate the oscillating voltage range up or down.
In one embodiment, REF RO 205 and DUT RO 210 are matched or symmetrically balanced relaxation oscillators. By using matched relaxation oscillators, environmental changes (e.g., temperature, voltage, and current drifts) affect each oscillator in a similar manner. Since scaler 230 generates IREF1 and IREF2 based on a single reference current IREF, fluctuations in reference current IREF are equally reflected in both IREF1 and IREF2. Therefore, any affect due to environmental changes is substantially equivalent across both REF RO 205 and DUT RO 210 and cancelled out or rejected by frequency comparator 215.
The components of relaxation oscillator 300 are interconnected as follows. Comparators 320 and 325 have one input tied to each other while one input of comparator 320 is coupled to high reference voltage VRH and one input of comparator 325 is coupled to low reference voltage VRL. The output of comparator 320 is coupled to the ‘S’ (set) input of flip-flop 315 and the output of comparator 325 is coupled to the ‘R’ (reset) input of flip-flop 315. An output ‘Q’ of flip-flop 315 is coupled to an input of current driver 310 to control when current driver 310 source or sinks drive current ID1 through terminal 221.
During operation, current driver 310 reciprocally charges and discharges capacitor 220 as illustrated in line chart 330 between VRL and VRH. The values of VRH and VRL are selectable to set the high and low voltage potential between which relaxation oscillator 300 oscillates terminal 221 of reference capacitor 220. Current driver 310 changes between sourcing drive current ID1 into terminal 221 and sinking drive current ID1 from terminal 221 under control of output Q of flip-flop 315.
A pull up path 405 and a pull down path 410 are coupled to the output Q of flip-flop 315 to selectively source or sink drive current ID1. Pull up path 405 includes two positive metal oxide semiconductor (“PMOS”) field effect transistor (“FETs”) coupled in series between a high voltage rail 415 and a node N1. Pull up path 405 is coupled to node N1 to selectively source drive current ID1 into reference capacitor 220. Pull down path 410 includes two negative metal oxide semiconductor (“NMOS”) FETs coupled in series between node N1 and a low voltage rail 420. Pull down path 410 is coupled to node N1 to selectively sink drive current ID1 from reference capacitor 220. Output Q of flip-flop 315 is coupled to the gate of PMOS transistor T1 in pull up path 405 and to the gate of NMOS transistor T3 in pull down path 410 to reciprocally turn on and off each of the current paths to reciprocally source and sink drive current ID1 through node N1.
Relaxation oscillator 400 further includes two current mirror circuits to mirror reference current IREF1 into pull up path 405 and pull down path 410 for generating drive current ID1. The first current mirror circuit includes a PMOS transistor T5 having its drain and gate clamped and its source coupled to high voltage rail 415. The gate of transistor T5 is further coupled to a gate of transistor T2 of pull up path 405 to implement the current mirroring function. The second current mirror circuit includes a NMOS transistor T6 having its drain and gate clamped and its source coupled to low voltage rail 420. The gate of transistor T6 is further coupled to a gate of transistor T4 of pull down path 410 to implement the current mirroring function.
By driving ID1 through node N1 to both charge and discharge reference capacitor 220, capacitance sensor 200 is not frequency limited due to relaxation error. Accordingly, REF RO 205 and DUT RO 210 can be operated at higher frequencies for reduced electromagnetic interference (“EMI”) susceptibility and improved signal to noise ratio (“SNR”). Furthermore, since REF RO 205 can be operated at higher frequencies, REF RO 205 can be reused within a circuit to operate as a synchronous clock signal for other circuit elements (e.g., to clock processor 225).
In one embodiment, drive current ID1 driven through node N1 is symmetrical having an equivalent magnitude when sourced out of node N1 via pull up path 405 as when sunk into node N1 via pull down path 410. In one embodiment, drive current ID1 is asymmetrical having a different magnitude when sourced out of node N1 via pull up path 405 as when sunk into node N1 via pull down path 410.
In a process block 505, capacitor sensor 200 is powered on and/or reset. In a process block 510, processor 225 outputs ICTRL and VCTRL signals to scalers 230 and 240, respectively. In one embodiment, ICTRL and VCTRL are multi-bit digital signals (e.g., 8 bit digital signals) for selecting the analog values for IREF1, IREF2, VRH, and VRL. Scaler 230 uses ICTRL to generate IREF1 and IREF2 based on IREF received from current source 235. ICTRL instructs scaler 230 what multiplying factor to apply to IREF to generate the individual reference currents IREF1 and IREF2. Scaler 240 uses VCTRL to generate VRH and VRL based on VREF received from voltage source 245. VCTRL instructs scaler 240 what multiplying factor to apply to VREF to generate VRL and VRH. Accordingly, processor 225 selects the analog values of IREF1, IREF2, VRH, and VRL via its output control signals VCTRL and ICTRL. Controls signals VCTRL and ICTRL may initially be set to default values.
In a process block 515, REF RO 205 commences reciprocally charging and discharging reference capacitor 220 in response to IREF1, VRH, and VRL. Similarly, DUT RO 210 commences reciprocally charging and discharging DUT capacitor 250 in response to IREF2, VRH, and VRL. The frequency of oscillation fRO1 and fRO2 generated by REF RO 205 and DUT RO 210, respectively, are proportional to their respective load capacitances and the magnitude of their drive currents ID1 and ID2. In turn, ID1 and ID2 are related to IREF1 and IREF2, respectively. Initially ID1 and ID2 may be set by processor 225 to be equivalent. Accordingly, if there is an initial difference between the oscillation frequencies fRO1 and fRO2, this difference would be due to a difference in the capacitance loads between reference capacitor 220 and DUT capacitor 250.
In a process block 520, if frequency comparator 215 detects a frequency difference between fRO1 and fRO2, then DUT RO 210 may be trimmed until fRO1 and fRO2 are substantially equivalent. In one embodiment, trimming DUT RO 210 may include adjusting ICTRL under control of processor 225 to select a different value for IREF2 until fRO1 equals fRO2 or Δf=0. At this point, since the absolute capacitance of reference capacitor 220 is a fixed known value, the amount of offset applied to IREF2 may be used by processor 225 to calculate the absolute capacitance of DUT capacitor 250. In this manner, capacitance sensor 220 may be used within testing equipment to measure the absolute capacitance of a device under test.
In a process block 525, frequency comparator 215 may continue to monitor the frequency differential Δf between fRO1 and fRO2 and provide real-time feedback to processor 225. In this manner, capacitance sensor 200 may be used to implement a user interface, such as a capacitive touch wheel/dial/pad/button, or the like. For example, capacitive touch wheels operate by using an operator's finger to change its capacitive load (i.e., the capacitive load of DUT capacitor 250). As the operator's finger is pressed against the touch interface, the change in capacitance is sensed and fed back to a control system.
In a decision block 530, a DUT capacitor event is any significant change in the capacitive load of DUT capacitor 250. Capacitance sensor 200 continues to wait until processor 225 registers a DUT capacitor event (e.g., finger touch), at which point process 500 continues to a process block 535.
In process block 535, frequency comparator 215 measures the frequency differential Δf resulting from the DUT capacitor event and feeds this information to processor 225. As discussed above, processor 225 can determine the change of capacitance ΔC of DUT capacitor 250 based on the magnitude of Δf resulting from the DUT capacitor event. Processor 225 may apply various filtering algorithms to reject false events or insignificant events. In a process block 540, an action may be taken in response to registering a valid DUT capacitor event. An example action may include implementing a user interface, such as moving a cursor on a screen or selecting a menu item.
Static Random Access Memory (“SRAM”) 610 and processor 225 are also coupled to system bus 612. Processor 225 is coupled to non-volatile storage (“NVS”) 616 which may be used to store firmware (e.g., control algorithms executable by processor 225 to implement process 500).
An analog block array 618 is coupled to system bus 612. Analog block array 618 also may be configured to implement a variety of analog circuits (e.g., ADC, analog filters, etc.) using configurable UMs. Analog block array 618 is also coupled to an analog I/O unit 624 which is coupled to I/O ports 602.
As illustrated, capacitance sensor 200 may be incorporated into IC 600 and coupled to analog I/O unit 624 for coupling to an externally coupled DUT capacitor 250 via I/O ports 602. In one embodiment, RO1 CLK output by REF RO 205 may optionally be used to clock the synchronous components of processor 225. Using REF RO 205 to clock processor 225 and operate capacitance sensor 200 eliminates the need for an additional clock circuit for processor 225, thereby eliminating a redundant part within IC 600.
As described above, capacitance sensor 200 may be incorporated into IC 600, as well as, various other integrated circuits. Descriptions of capacitance sensor 200 may be generated and compiled for incorporation into other integrated circuits. For example, behavioral level code describing capacitance sensor 200, or portions thereof, may be generated using a hardware descriptive language, such as VHDL or Verilog, and stored to a machine-accessible medium (e.g., CD-ROM, hard disk, floppy disk, etc.). Furthermore, the behavioral level code can be compiled into register transfer level (“RTL”) code, a netlist, or even a circuit layout and stored to a machine-accessible medium. The behavioral level code, the RTL code, the netlist, and the circuit layout all represent various levels of abstraction to describe capacitance sensor 200.
The above description of illustrated embodiments of the invention, including what is described in the Abstract, is not intended to be exhaustive or to limit the invention to the precise forms disclosed. While specific embodiments of, and examples for, the invention are described herein for illustrative purposes, various modifications are possible within the scope of the invention, as those skilled in the relevant art will recognize.
These modifications can be made to the invention in light of the above detailed description. The terms used in the following claims should not be construed to limit the invention to the specific embodiments disclosed in the specification. Rather, the scope of the invention is to be determined entirely by the following claims, which are to be construed in accordance with established doctrines of claim interpretation.
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