CAPACITOR AND METHOD FOR FABRICATING THE SAME

Abstract

A capacitor includes a lower electrode; a dielectric layer formed on a predetermined portion of the lower electrode; an upper electrode formed on the dielectric layer; a hard mask pattern formed on the upper electrode; and an isolation layer having a shape of a spacer, formed on one sidewall of the hard mask pattern, the upper electrode, and the dielectric layer.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

The present invention claims priority of Korean Patent Application No. 10-2008-0133890, filed on Dec. 24, 2008, which is incorporated herein by reference in its entirety.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to semiconductor fabrication technology; and, more particularly, to a metal-insulator-metal (MIM) capacitor and a method for fabricating the same.

2. Description of Related Art

An MIM capacitor is used in an analog circuit and a radio frequency (RF) circuit. The MIM capacitor is used when a capacitor of a high quality factor Q having a low serial resistance is needed. Furthermore, the MIM capacitor is used on behalf of analog capacitors due to its low thermal budget and low power voltage and low parasitic capacitance.

FIGS. 1A to 1E are cross-sectional views illustrating a conventional method for fabricating an MIM capacitor.

As shown in FIG. 1A, a lower metal line 102 is formed on a substrate 101. A lower electrode 103, a dielectric layer 104 and an upper electrode 105 are sequentially formed on the lower metal line 102.

Referring to FIG. 1B, the upper electrode 105 is etched to form an upper electrode pattern 105A, and the dielectric layer 104 is also partially etched to form a first dielectric layer pattern 104A. Here, the first dielectric layer pattern 104A remains on the lower electrode 103 in a predetermined thickness.

Referring to FIG. 1C, the remaining first dielectric layer pattern 104A is etched to form a second dielectric layer pattern 104B.

Referring to FIG. 1D, the lower electrode 103 and the lower metal line 102 are sequentially etched to form a lower electrode pattern 103A and a lower metal line pattern 102A.

Referring to FIG. 1E, by performing a line process after forming an inter-layer insulation layer 106, first and second vias 107 and 108 are formed inside the inter-layer insulation layer 106, and an upper metal line 111 is formed thereon. The upper metal line 111 is a stack layer of first and second layers 109 and 110.

In the conventional method of fabricating the MIM capacitor, due to polymer or various kinds of conductive residues, the upper electrode pattern 105A is not electrically isolated from the lower electrode pattern 103A or the lower metal line pattern 102A which functions as a part of the lower electrode pattern 103A. As a result, they are shorted and thus a leakage current is generated.

SUMMARY OF THE INVENTION

An embodiment of the present invention is directed to providing a capacitor that can prevent polymer or various kinds of conductive residues from being generated during the fabrication of an MIM capacitor, and a method for fabricating the same.

Another embodiment of the present invention is directed to providing a capacitor that can prevent a short between an upper electrode and a lower electrode, or a short between an upper electrode and a neighboring metal line, and a method for fabricating the same.

In accordance with an aspect of the present invention, there is provided a capacitor including: a lower electrode; a dielectric layer formed on a predetermined portion of the lower electrode; an upper electrode formed on the dielectric layer; a hard mask pattern formed on the upper electrode; and an isolation layer having a shape of a spacer, formed on one sidewall of the hard mask pattern, the upper electrode, and the dielectric layer.

In accordance with another aspect of the present invention, there is provided a method for fabricating a capacitor including: forming a dielectric layer over a lower electrode on a substrate; forming an upper electrode over the dielectric layer; forming a hard mask over the upper electrode; etching the hard mask to form a hard mask pattern; etching the upper electrode to make the dielectric layer remain on the lower electrode in a predetermined thickness; forming an isolation layer along an upper surface of the remaining dielectric layer and the hard mask pattern; leaving the isolation layer having a shape of a spacer on one sidewall of the hard mask pattern, the upper electrode, and the dielectric layer; and etching the lower electrode to be isolated.

Other objects and advantages of the present invention can be understood by the following description, and become apparent with reference to the embodiments of the present invention. Also, it is obvious to those skilled in the art to which the present invention pertains that the objects and advantages of the present invention can be realized by the means as claimed and combinations thereof.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1E are cross-sectional views illustrating a conventional method for fabricating an MIM capacitor.

FIGS. 2A to 2D are cross-sectional views illustrating a method for fabricating an MIM capacitor in accordance with a first embodiment of the present invention.

FIG. 3 is a graph showing comparison results of a leakage current in accordance with the first embodiment of the present invention and the conventional method.

FIG. 4 is a plan view of a metal line fabricated in accordance with the first embodiment of the present invention.

FIG. 5 is a plan view of a via fabricated in accordance with the first embodiment of the present invention.

FIG. 6 is a graph showing comparison results of a resistance of via contacts in accordance with the first embodiment of the present invention and the conventional method.

FIGS. 7A to 7F are cross-sectional views illustrating a method for fabricating an MIM capacitor in accordance with a second embodiment of the present invention.

FIG. 8 is a graph showing comparison results of a leakage current in accordance with the first and second embodiments of the present invention and the conventional method.

FIG. 9 is a graph showing comparison results of a resistance of via contacts in accordance with the first and second embodiments of the present invention and the conventional method.

DESCRIPTION OF SPECIFIC EMBODIMENTS

The advantages, features and aspects of the invention will become apparent from the following description of the embodiments with reference to the accompanying drawings, which is set forth hereinafter.

In the drawings, the dimensions of layers and regions are exaggerated for clarity of illustration. Like reference numerals in the drawings denote like elements, and thus their description will be omitted. It will also be understood that when a layer (or film) is referred to as being ‘on’ another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Further, it will be understood that when a layer is referred to as being ‘under’ another layer, it can be directly under, and one or more intervening layers may also be present. In addition, it will also be understood that when a layer is referred to as being ‘between’ two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present. Furthermore, it will also be understood that when each reference numeral includes an English character, it can mean that the same layer is partially changed through an etch process, a polish process and the like.

First Embodiment

FIGS. 2A to 2D are cross-sectional views illustrating a method for fabricating an MIM capacitor in accordance with a first embodiment of the present invention.

Referring to FIG. 2A, a lower metal line 202 is formed on a substrate 201. Here, the lower metal line 202 is selected from the group consisting of a transition metal. The lower metal line 202 may be formed of any metal among aluminum (Al), copper (Cu), and platinum (Pt). The thickness of the lower metal line 202 varies according to a specific resistance Rs required for a line process of a corresponding layer.

Subsequently, a lower electrode 203 is formed over the lower metal line 202. The lower electrode 203 includes antireflection materials and is selected from the group consisting of ruthenium (Ru), strontium ruthenate (SrRuO₃), platinum (Pt), tantalum nitride (TaN), tungsten nitride (WN), titanium nitride (TiN), titanium aluminum nitride (TiAlN), cobalt (Co), copper (Cu), hafnium (Hf) and a combination thereof.

Subsequently, a dielectric layer 204 is formed over the lower electrode 203. The dielectric layer 204 includes insulation materials and is selected from the group consisting of silicon nitride (SiN), silicon oxide (SiO₂), aluminum oxide (Al₂O₃), hafnium oxide (HfO), tantalum oxide (Ta₂O₅), strontium titanate (SrTiO₃), Perofskite (CaTiO₃), lanthanum aluminate (LaAlO₃), barium zirconia (BaZrO₃), barium zircon titanate (BaZrTiO₃), strontium zircon titanate (SrZrTiO₃) and a combination thereof.

Subsequently, an upper electrode 205 is formed over the dielectric layer 204. The upper electrode 205 is formed of substantially the same materials as the lower electrode 203. For example, the upper electrode 205 may be selected from the group consisting of Ru, SrRuO₃, Pt, TaN, WN, TiN, TiAlN, Co, Cu, Hf and a combination thereof.

Referring to FIG. 2B, the upper electrode 205 is etched to form an upper electrode pattern 205A. Herein, an over-etch process is performed. That is, through the etch process, the upper electrode 205 is etched to form the upper electrode pattern 205A, and at the same time, the dielectric layer 204 is also partially etched to form a first dielectric layer pattern 204A remaining on the lower electrode 203. The etch process may use chlorine-based gas as a main gas, and a gas selected from the group consisting of nitrogen (N₂) gas and argon (Ar) gas as a supplementary gas. The chlorine-based gas is selected from the group consisting of chlorine (Cl₂), Boron Trichloride (BCl₃), carbon chloride (CCl), hydrochloride (HCl), chlorotrifluoromethane (CF₃Cl), tetraclorosilane (SiCl₄) and a combination thereof.

Referring to FIG. 2C, the remaining first dielectric layer pattern 204A, the lower electrode 203 and the lower metal line 202 are sequentially etched to form a second dielectric layer pattern 204B, a lower electrode pattern 203A and a lower metal line pattern 202A partially exposing a surface of the substrate 201. Accordingly, a desired profile of the MIM capacitor is formed as shown in FIG. 2C.

Referring to FIG. 2D, a line process is performed as follows. After forming an inter-layer insulation layer 206 over the substrate 201 and the MIM capacitor, the lower electrode pattern 203A and the upper electrode pattern 205A are partially exposed to thereby form first and second holes (not shown). Thereafter, first and second vias 207 and 208 are formed to fill the first and second holes, and then a plurality of upper metal lines 211 are formed thereon to be electrically coupled with the first and second vias 207 and 208.

Each of the upper metal lines 211 includes a first conductive layer 209 which substantially functions as a metal line, and a second conductive layer 210 formed over the first conductive layer 209. The first conductive layer 209 is selected from the group consisting of a transition metal. The first conductive layer 209 may be formed of any metal among aluminum (Al), copper (Cu), and platinum (Pt). The second conductive layer 210 is selected from the group consisting of Ru, SrRuO₃, Pt, TaN, WN, TiN, TiAlN, Co, Cu, Hf and a combination thereof.

In the method for fabricating the MIM capacitor in accordance with the first embodiment, the lower electrode pattern 203A is electrically isolated from the upper electrode pattern 205A by leaving a predetermined thickness of the second dielectric layer pattern 204B over the lower electrode pattern 203A as shown in FIG. 2C. As a result, it is possible to prevent a short between the lower electrode pattern 203A and the upper electrode pattern 205A due to various residues generated during plural fabricating processes.

FIG. 3 is a graph illustrating comparison results of a leakage current in accordance with the first embodiment of the present invention and the conventional method.

As shown in FIG. 3, a characteristic of the leakage current of the MIM capacitor in accordance with the first embodiment is better than that of the conventional method.

In the first embodiment, the predetermined thickness of the second dielectric layer pattern 204B remains over the lower electrode pattern 203A as shown in FIG. 2C. In case that the dielectric layer is formed of metal oxide materials having a high dielectric constant such as aluminum oxide (Al₂O₃), hafnium oxide (HfO), tantalum oxide (Ta₂O₅), the remaining dielectric layer may affect a subsequent process.

FIG. 4 is a plan view of a metal line fabricated in accordance with the first embodiment of the present invention.

As shown in FIG. 4, when the dielectric layer remains over the lower electrode, it requires an additional etch process to the dielectric layer. Accordingly, a margin of a photoresist is insufficient, and a profile of the metal line has a poor characteristic due to a conductive polymer.

FIG. 5 is a plan view of a via fabricated in accordance with the first embodiment of the present invention.

As shown in FIG. 5, when the dielectric layer remains over the lower electrode, the conductive polymer remains inside the via during an etch process for forming the via where the metal line is formed. If the conductive polymer remains inside the via, a resistance of via contacts is increased so that a device characteristic is deteriorated.

FIG. 6 is a graph illustrating comparison results of a resistance of via contacts in accordance with the first embodiment of the present invention and the conventional method.

As shown in FIG. 6, the resistance of via contacts in accordance with the first embodiment is increased in comparison with the conventional method. That is, when the dielectric layer remains over the lower electrode, the resistance of the via contact becomes increased.

Hereinafter, an MIM capacitor having improvements in comparison with the first embodiment will be described.

Second Embodiment

FIGS. 7A to 7F are cross-sectional views illustrating a method for fabricating an MIM capacitor in accordance with a second embodiment of the present invention

Referring to FIG. 7A, a lower metal line 302 is formed on a substrate 301. A lower electrode 303, a dielectric layer 304 and an upper electrode 305 are sequentially formed over the lower metal line 302.

Subsequently, a hard mask 306 is formed over the upper electrode 305. The hard mask 306 is formed of an oxide layer such as undoped silicate glass (USG), tetraethyl orthosilicate (TEOS) and high density plasma (HDP), or a nitride layer such as silicon nitride (SiN) or silicon oxynitride (SiON) through a low pressure chemical vapor deposition (LPCVD) process. The hard mask 306 is formed with a thickness ranging from approximately 100 Å to approximately 4000 Å.

Referring to FIG. 7B, a photoresist pattern (not shown) is formed over the hard mask 306. An etch process is performed to etch the hard mask 306 by using the photoresist pattern as an etch mask to thereby form a hard mask pattern 306A. Here, the etch process uses a fluorocarbon gas as a main gas, and a gas selected from the group consisting of oxygen (O₂) gas, nitrogen (N₂) gas and argon (Ar) gas as a supplementary gas. The fluorocarbon gas is selected from the group consisting of Perfluoromethane (CF₄), Trifluoromethane (CHF₃), Hexafluoroethane (C₂F₆), Octafluoroethane (C₂F₈), Octafluorocyclobutane (C₄F₈) and a combination thereof. After the hard mask pattern 306A is formed, the photoresist pattern is removed and a clean process may be performed thereon.

Subsequently, the upper electrode 305 is etched to form an upper electrode pattern 305A. Herein, the upper electrode 305 is etched by using the photoresist pattern as an etch mask, or using only the hard mask pattern 306A as an etch mask. The upper electrode 305 may be etched by using chlorine-based gas as a main gas, and a gas selected from the group consisting of nitrogen gas and argon gas as a supplementary gas. The chlorine-based gas is selected from the group consisting of chlorine (Cl₂), Boron Trichloride (BCl₃), carbon chloride (CCl), hydrochloride (HCl), chlorotrifluoromethane (CF₃Cl), tetraclorosilane (SiCl₄) and a combination thereof.

When using only the hard mask pattern 306A as an etch mask, a strip process is performed to remove the photoresist pattern before etching the upper electrode 305. The strip process is performed by using O₂ plasma. The reason the photoresist pattern is removed before etching the upper electrode 305 is that the materials of the photoresist pattern function as sources generating the polymer.

Meanwhile, it is possible to remove the photoresist pattern after etching the upper electrode 305, not before etching the upper electrode 305. Herein, plural polymers may be generated around the upper electrode 305 during etching the upper electrode 305. Since the generated polymers are not removed during subsequent processes, a leakage current of the MIM capacitor is caused. Accordingly, it is desirable that the photoresist pattern is removed before etching the upper electrode 305.

In another embodiment, a two-step process may be performed to etch the upper electrode 305. The two-step process includes a main etch process and an over-etch process. The main etch process is performed for a predetermined time longer than that of the over-etch process. The main etch process may be performed for approximately 100 seconds to approximately 130 seconds, and the over-etch process is performed for approximately 20 seconds to approximately 30 seconds. The main etch process is performed by using chlorine (Cl) gas and nitrogen (N₂) gas, and the over-etch process is performed by using boron trichloride (BCl₃) gas and argon (Ar) gas. The main etch process may be performed until a predetermined thickness of the dielectric layer 304 remains to form a dielectric layer pattern 304A.

The reason the two-step process is used to etch the upper electrode 305 is to secure uniformity to the remaining thickness of the dielectric layer pattern 304A after etching the upper electrode 305. The dielectric layer pattern 304A is formed of metal oxide materials having a high dielectric constant, i.e., a high permittivity layer. The high permittivity layer has a lower etch rate compared to a silicon oxide layer, thereby deteriorating etch uniformity.

During the main etch process for etching the upper electrode 305 using chlorine (Cl) gas and nitrogen (N₂) gas, an etch rate around a wafer is faster than that at the center of the wafer. On the contrary, during the main etch process for etching the dielectric layer pattern 304A exposed after etching the upper electrode 305, which is performed under the same conditions, an etch rate at the center of a wafer is faster than that around the wafer. During the over-etch process using boron trichloride (BCl₃) gas and argon (Ar) gas, an etch rate around the wafer is faster than that at the center of the wafer. As a result, the uniformity to the remaining thickness of the dielectric layer pattern 304A of the high permittivity layer is determined by combining the etch rates of those processes.

In the conventional method, an over-etch process is performed after finishing etching the upper electrode. On the contrary, in the present embodiment, the main etch process is performed on the dielectric layer in advance, and then the over-etch process is continuously performed thereon, thereby improving the uniformity in the remaining thickness of the dielectric layer.

For reference, during etching the upper electrode 305, the dielectric layer pattern 304A remaining after performing the main etch process and the over-etch process includes a first thickness extended to a lower side of an isolation layer pattern having a shape of a spacer, which is shown as a reference symbol ‘307A’ in FIG. 7D, and a second thickness between the upper electrode pattern 305A and the lower electrode 303. The first thickness is thinner than the second thickness. The first thickness may have an uniform thickness ranging from approximately 30 Å to approximately 100 Å within variation ranging from approximately 10 Å to approximately 20 Å in the wafer.

Referring to FIG. 7C, an isolation layer 307 is formed along an upper surface of the remaining dielectric layer pattern 304A and the hard mask pattern 306A. The isolation layer 307 has an etch selectivity to the hard mask pattern 306A. For example, the isolation layer 307 is formed of a nitride layer when the hard mask pattern 306A is formed of an oxide layer, and the isolation layer 307 is formed of an oxide layer when the hard mask pattern 306A is formed of a nitride layer. Both of the hard mask pattern 306A and the isolation layer 307 may be formed of a nitride layer, or both of the hard mask pattern 306A and the isolation layer 307 may be formed of an oxide layer. Herein, the oxide layer includes USG, TEOS or HDP, and the nitride layer includes SiN or SiON. The isolation layer 307 is formed in a predetermined thickness ranging from approximately 100 to approximately 4000.

Referring to FIG. 7D, the isolation layer 307 is etched to form an isolation layer pattern 307A remaining on one sidewall of the hard mask pattern 306A, the upper electrode pattern 305A, and the dielectric layer pattern 304A. Herein, the etch process is a dry etch process. The etch process may include an etch-back process or a blanket process. The etch process may be performed to etch the dielectric layer pattern 304A remaining over the lower electrode 303 shown in FIG. 7C. Accordingly, one side of the dielectric layer pattern 304A extended to a lower side of the isolation layer pattern 307A is aligned with one side of the isolation layer pattern 307A, which is an opposite side to the upper electrode pattern 305A.

Referring to FIG. 7E, the lower electrode 303 and the lower metal line 302 are sequentially etched to form a lower electrode pattern 303A and a lower metal line pattern 302A partially exposing a surface of the substrate 301.

Referring to FIG. 7F, a line process is performed to sequentially form first and second interconnection metal lines 309 and 310, and a plurality of upper metal lines 313. The line process is performed as follows. First, after forming an inter-layer insulation layer 308, the lower electrode pattern 303A and the upper electrode pattern 305A are partially exposed to thereby form first and second vias (not shown).

Thereafter, the first and second interconnection metal lines 309 and 310 are formed to fill the first and second vias, and then the upper metal lines 313 are formed thereon to be electrically coupled with the first and interconnection metal lines 309 and 310.

Like the first embodiment, the upper metal lines 313 include a first conductive layer 311 which substantially functions as a metal line, and a second conductive layer 312 formed over the first conductive layer 311. The first conductive layer 311 is selected from the group consisting of a transition metal, and the second conductive layer 313 is selected from the group consisting of Ru, SrRuO₃, Pt, TaN, WN, TiN, TiAlN, Co, Cu, Hf and a combination thereof.

FIG. 8 is a graph illustrating comparison results of a leakage current in accordance with the first and second embodiments of the present invention and the conventional method.

As shown in FIG. 8, like the first embodiment, a characteristic of the leakage current of the MIM capacitor in accordance with the second embodiment is improved.

FIG. 9 is a graph illustrating comparison results of a resistance of via contacts in accordance with the first and second embodiments of the present invention and the conventional method.

As shown in FIG. 9, the resistance of via contacts in accordance with the second embodiment is improved in comparison with the first embodiment and the conventional method.

The embodiments of the present invention may have the following effects.

First, an isolation layer is formed with a shape of a spacer on one sidewall of an upper electrode and a dielectric to thereby electrically isolate the upper electrode and a lower electrode. Accordingly, a characteristic of a leakage current of an MIM capacitor can be improved by fundamentally preventing the upper electrode and the lower electrode from being short.

Second, a process for forming vias to connect an upper metal line and a lower electrode is performed in a state that a predetermined portion of a dielectric layer remaining on the lower electrode, which does not overlap the upper metal line, is removed. Consequently, a resistance of via contacts caused by the remaining dielectric layer can be improved.

Third, a hard mask pattern is formed on an upper electrode and an isolation layer having a shape of a spacer is formed on one sidewall of the upper electrode to thereby entirely separate the upper electrode from the external environment. As a result, a leakage current characteristic of an MIM capacitor is improved, and thus a reliability can be improved.

Fourth, an etch process to an upper electrode is performed in a state that a photoresist pattern does not exist by removing the photoresist pattern prior to the etch process to the upper electrode after forming a hard mask pattern. As a result, it is possible to prevent polymers from being generated by the photoresist pattern during the etching of the upper electrode.

Fifth, when performing an etch process to an upper electrode, a main etch process is performed for a predetermined time longer than that of an over-etch process. Accordingly, after finishing the etch process to the upper electrode, a thickness of a dielectric layer remaining on a lower electrode can be uniformly maintained within variation range of approximately 20 Å in a wafer.

While the present invention has been described with respect to the specific embodiments, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the following claims.

Claims

1. A capacitor, comprising: a lower electrode;a dielectric layer formed on a predetermined portion of the lower electrode;an upper electrode formed on the dielectric layer;a hard mask pattern formed on the upper electrode; andan isolation layer having a shape of a spacer, formed on one sidewall of the hard mask pattern, the upper electrode, and the dielectric layer.

2. The capacitor of claim 1, wherein a predetermined portion of the dielectric layer extends to a lower side of the isolation layer.

3. The capacitor of claim 2, wherein the extended portion of the dielectric layer is formed to be aligned with one side of the isolation layer.

4. The capacitor of claim 2, wherein the extended portion of the dielectric layer has a uniform thickness within variation ranging from approximately 10 Å to approximately 20 Å in a wafer.

5. The capacitor of claim 2, wherein the extended portion of the dielectric layer is thinner than a portion of the dielectric layer between the upper electrode and the lower electrode.

6. The capacitor of claim 2, wherein the extended portion of the dielectric layer has a thickness ranging from approximately 30 Å to approximately 100 Å.

7. The capacitor of claim 1, wherein the hard mask pattern is formed of an oxide layer or a nitride layer.

8. The capacitor of claim 1, wherein the isolation layer is formed of an oxide layer or a nitride layer.

9. The capacitor of claim 1, further comprising: a first via coupled with the lower electrode by being isolated from the upper electrode by the isolation layer; anda second via coupled with the upper electrode by piercing the hard mask pattern.

10. The capacitor of claim 1, wherein the lower electrode is formed over a lower metal line which is formed over a substrate.

11. The capacitor of claim 1, wherein each of the upper and lower electrodes is selected from the group consisting of ruthenium (Ru), strontium ruthenate (SrRuO3), platinum (Pt), tantalum nitride (TaN), tungsten nitride (WN), titanium nitride (TiN), titanium aluminum nitride (TiAlN), cobalt (Co), copper (Cu), hafnium (Hf) and a combination thereof.

12. The capacitor of claim 1, wherein the dielectric layer is selected from the group consisting of silicon nitride (SiN), silicon oxide (SiO2), aluminum oxide (Al2O2), hafnium oxide (HfO), tantalum oxide (Ta2O5), strontium titanate (SrTiO3), Perofskite (CaTiO3), lanthanum aluminate (LaAlO3), barium zirconia (BaZrO3), barium zircon titanate (BaZrTiO3), strontium zircon titanate (SrZrTiO3) and a combination thereof.

13. The capacitor of claim 1, wherein the dielectric layer separates the isolation layer from the lower electrode.

14. A method for fabricating a capacitor, the method comprising: forming a dielectric layer over a lower electrode on a substrate;forming an upper electrode over the dielectric layer;forming a hard mask over the upper electrode;etching the hard mask to form a hard mask pattern;etching the upper electrode to make the dielectric layer remain on the lower electrode in a predetermined thickness;forming an isolation layer along an upper surface of the remaining dielectric layer and the hard mask pattern;leaving the isolation layer having a shape of a spacer on one sidewall of the hard mask pattern, the upper electrode, and the dielectric layer; andetching the lower electrode to be isolated.

15. The method of claim 14, wherein in the leaving the isolation layer having the shape of the spacer on one sidewall of the hard mask pattern, the upper electrode, and the dielectric layer, a predetermined portion of the dielectric layer is formed to extend to a lower side of the isolation layer.

16. The method of claim 15, wherein the extended portion of the dielectric layer is formed to be aligned with one side of the isolation layer.

17. The method of claim 15, wherein the extended portion of the dielectric layer has a uniform thickness within variation ranging from approximately 10 Å to approximately 20 Å in a wafer.

18. The method of claim 15, wherein the extended portion of the dielectric layer is thinner than a portion of the dielectric layer between the upper electrode and the lower electrode.

19. The method of claim 15, wherein the extended portion of the dielectric layer has a thickness ranging from approximately 30 Å to approximately 100 Å.

20. The method of claim 14, wherein the etching the hard mask to form the hard mask pattern is performed by using a photoresist pattern as an etch mask.

21. The method of claim 20, further comprising: removing the photoresist pattern after forming the hard mask pattern.

22. The method of claim 21, further comprising: performing a clean process after removing the photoresist pattern.

23. The method of claim 14, wherein the etching the upper electrode is performed by a main etch process and an over-etch process, the main etch process being performed for a predetermined time longer than the over-etch process.

24. The method of claim 23, wherein the main etch process is performed for approximately 100 seconds to approximately 130 seconds.

25. The method of claim 23, wherein the over-etch process is performed for approximately 20 seconds to approximately 30 seconds.

26. The method of claim 23, wherein the main etch process is performed by using chlorine (Cl) gas and nitrogen (N2) gas.

27. The method of claim 23, wherein the over-etch process is performed by using boron trichloride (BCl3) gas and argon (Ar) gas.

28. The method of claim 23, wherein the main etch process is performed until the dielectric layer remains on the lower electrode in a predetermined thickness.

29. The method of claim 14, wherein the hard mask pattern is formed of an oxide layer or a nitride layer.

30. The method of claim 14, wherein the isolation layer is formed of an oxide layer or a nitride layer.

31. The method of claim 14, wherein during the leaving the isolation layer having the shape of the spacer on one sidewall of the hard mask pattern, the upper electrode, and the dielectric layer, an etch-back process or a blanket process is performed.

32. The method of claim 14, further comprising: forming an inter-layer insulation layer to cover the upper electrode and the substrate after the etching the lower electrode to be isolated;etching the inter-layer insulation layer and the hard mask pattern to form first and second holes to partially expose the lower electrode and the upper electrode;forming first and second vias to fill the first and second holes; andforming a plurality of upper metal lines, each coupled to the first and second vias.

33. The method of claim 14, wherein each of the upper and lower electrodes is selected from the group consisting of ruthenium (Ru), strontium ruthenate (SrRuO3), platinum (Pt), tantalum nitride (TaN), tungsten nitride (WN), titanium nitride (TiN), titanium aluminum nitride (TiAlN), cobalt (Co), copper (Cu), hafnium (Hf) and a combination thereof.

34. The method of claim 14, wherein the dielectric layer is selected from the group consisting of silicon nitride (SiN), silicon oxide (SiO2), aluminum oxide (Al2O3), hafnium oxide (HfO), tantalum oxide (Ta2O5), strontium titanate (SrTiO3), Perofskite (CaTiO3), lanthanum aluminate (LaAlO3), barium zirconia (BaZrO3), barium zircon titanate (BaZrTiO3), strontium zircon titanate (SrZrTiO3) and a combination thereof.

35. The method of claim 14, wherein in the leaving the isolation layer having the shape of the spacer on one sidewall of the hard mask pattern, the upper electrode, and the dielectric layer, the dielectric layer separates the isolation layer from the lower electrode.

36. The method of claim 14, wherein in the etching the hard mask to form the hard mask pattern, a fluorocarbon gas is used as a main gas, and a gas selected from the group consisting of oxygen (O2) gas, nitrogen (N2) gas and argon (Ar) gas is used as a supplementary gas.

37. The method of claim 36, wherein the fluorocarbon gas is selected from the group consisting of Perfluoromethane (C F4), Trifluoromethane (CHF3), Hexafluoroethane (C2F6), Octafluoroethane (C2F8), Octafluorocyclobutane (C4F8) and a combination thereof.

38. The method of claim 14, wherein in the etching the upper electrode to make the predetermined thickness of the dielectric layer remain on the lower electrode, a chlorine-based gas is used as a main gas, and a gas selected from the group consisting of nitrogen gas and argon gas is used as a supplementary gas.

39. The method of claim 38, wherein the chlorine-based gas is selected from the group consisting of chlorine (Cl2), Boron Trichloride (BCl3), carbon chloride (CCl), hydrochloride (HCl), chlorotrifluoromethane (CF3Cl), tetraclorosilane (SiCl4) and a combination thereof.