comprising a noble metal or a noble metal oxide

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H01L28/65

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor

Current Industry

H01L28/65comprising a noble metal or a noble metal oxide

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Barrier layer for metal insulator metal capacitors
- Patent number 12,218,181
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Anhao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier layer for metal insulator metal capacitors
- Patent number 12,211,890
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Anhao Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor structure and forming method thereof
- Patent number 12,205,981
- Issue date Jan 21, 2025
- Semiconductor Manufacturing International (Shanghai) Corporation
- Changzhou Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating pedestal based memory devices using pocket in...
- Patent number 12,142,310
- Issue date Nov 12, 2024
- Kepler Computing Inc.
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystalline bottom electrode for perovskite capacitors and methods...
- Patent number 12,100,731
- Issue date Sep 24, 2024
- Intel Corporation
- Kaan Oguz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rapid thermal annealing (RTA) methodologies for integration of pero...
- Patent number 12,094,923
- Issue date Sep 17, 2024
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor structure, semiconductor memory device including the same...
- Patent number 12,094,924
- Issue date Sep 17, 2024
- Samsung Electronics Co., Ltd.
- Kyoo Ho Jung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Majority gate based low power ferroelectric based adder with reset...
- Patent number 12,088,297
- Issue date Sep 10, 2024
- Kepler Computing Inc.
- Sasikanth Manipatruni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Capacitor and electronic device including the same
- Patent number 12,087,810
- Issue date Sep 10, 2024
- Samsung Electronics Co., Ltd.
- Jinhong Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pocket integration process for embedded memory
- Patent number 12,069,866
- Issue date Aug 20, 2024
- Kepler Computing Inc.
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices
- Patent number 12,057,470
- Issue date Aug 6, 2024
- Samsung Electronics Co., Ltd.
- Jungmin Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitors and methods of fabrication
- Patent number 12,048,165
- Issue date Jul 23, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Grant
Trench capacitors with continuous dielectric layer and methods of f...
- Patent number 12,034,086
- Issue date Jul 9, 2024
- Somilkumar J. Rathi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor apparatus including the same
- Patent number 12,034,036
- Issue date Jul 9, 2024
- Samsung Electronics Co., Ltd.
- Jeonggyu Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor and memory device
- Patent number 12,029,027
- Issue date Jul 2, 2024
- Samsung Electronics Co., Ltd.
- Cheoljin Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor storage device
- Patent number 11,978,806
- Issue date May 7, 2024
- Kioxia Corporation
- Hikari Tajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual hydrogen barrier layer for trench capacitors integrated with l...
- Patent number 11,961,877
- Issue date Apr 16, 2024
- Kepler Computing Inc.
- Somilkumar J. Rathi
- G11 - INFORMATION STORAGE
Information Patent Grant
Metal-insulator-metal capacitor
- Patent number 11,955,509
- Issue date Apr 9, 2024
- Samsung Electronics Co., Ltd.
- Jihyung Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,949,017
- Issue date Apr 2, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory cell, capacitive memory structure, and methods thereof
- Patent number 11,950,430
- Issue date Apr 2, 2024
- FERROELECTRIC MEMORY GMBH
- Stefan Ferdinand Müller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,949,018
- Issue date Apr 2, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pedestal-based pocket integration process for embedded memory
- Patent number 11,942,133
- Issue date Mar 26, 2024
- Kepler Computing Inc.
- Noriyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric random access memory (FRAM) capacitors and methods of...
- Patent number 11,937,434
- Issue date Mar 19, 2024
- Microchip Technology Incorporated
- Yaojian Leng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer electrode to improve performance of ferroelectric memor...
- Patent number 11,916,127
- Issue date Feb 27, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yi Yang Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,916,149
- Issue date Feb 27, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manganese-doped perovskite layers and semiconductor device incorpor...
- Patent number 11,908,943
- Issue date Feb 20, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a perovskite-material based planar capacitor...
- Patent number 11,908,704
- Issue date Feb 20, 2024
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a perovskite-material based trench capacitor...
- Patent number 11,894,417
- Issue date Feb 6, 2024
- Kepler Computing Inc.
- Niloy Mukherjee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
B-site doped perovskite layers and semiconductor device incorporati...
- Patent number 11,888,067
- Issue date Jan 30, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped polar layers and semiconductor device incorporating same
- Patent number 11,888,066
- Issue date Jan 30, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR PACKAGE
- Publication number 20250046755
- Publication date Feb 6, 2025
- Samsung Electronics Co., Ltd.
- Myungsam KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR STRUCTURE AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME
- Publication number 20250016978
- Publication date Jan 9, 2025
- Samsung Electronics Co., Ltd.
- Jung Min PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR STRUCTURE INTEGRATED WITH CONTACT PAD STRUCTURE
- Publication number 20250006779
- Publication date Jan 2, 2025
- BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC
- Nathaniel P. Wyckoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
- Publication number 20250006778
- Publication date Jan 2, 2025
- Samsung Electronics Co., Ltd.
- Haeryong KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20240421229
- Publication date Dec 19, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRONTIUM OXIDE INTERLAYERS FOR IMPROVED ELECTRICAL DEVICE PERFORMANCE
- Publication number 20240395459
- Publication date Nov 28, 2024
- Ruben Waldman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR AND ELECTRONIC DEVICE INCLUDING THE SAME
- Publication number 20240387611
- Publication date Nov 21, 2024
- Samsung Electronics Co., Ltd.
- Jinhong KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A MAJORITY GATE BASED LOW POWER FERROELECTRIC BAS...
- Publication number 20240380403
- Publication date Nov 14, 2024
- Kepler Computing Inc.
- Sasikanth Manipatruni
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION
- Publication number 20240373644
- Publication date Nov 7, 2024
- Intel Corporation
- Nazila Haratipour
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20240363678
- Publication date Oct 31, 2024
- Samsung Electronics Co., Ltd.
- Jungmin Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20240321943
- Publication date Sep 26, 2024
- Samsung Electronics Co., Ltd.
- Jungmin PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR AND MEMORY DEVICE
- Publication number 20240315003
- Publication date Sep 19, 2024
- Samsung Electronics Co., Ltd.
- Cheoljin CHO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONCURRENT COMPENSATION IN A MEMORY SYSTEM
- Publication number 20240274720
- Publication date Aug 15, 2024
- Micron Technology, Inc.
- Hiroshi Akamatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR, METHOD OF PREPARING THE SAME, AND ELECTRONIC DEVICE INCL...
- Publication number 20240243164
- Publication date Jul 18, 2024
- Samsung Electronics Co., Ltd.
- Jooho LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR AND DEVICE INCLUDING THE SAME
- Publication number 20240234492
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Haeryong KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS AND ELECTRONIC APP...
- Publication number 20240234031
- Publication date Jul 11, 2024
- Samsung Electronics Co., Ltd.
- Narae HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-INSULATOR-METAL CAPACITOR
- Publication number 20240222421
- Publication date Jul 4, 2024
- Samsung Electronics Co., Ltd.
- Jihyung KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
- Publication number 20240213306
- Publication date Jun 27, 2024
- Samsung Electronics Co., Ltd.
- Sunghyun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE
- Publication number 20240206189
- Publication date Jun 20, 2024
- Huawei Technologies Co., Ltd
- Wanliang Tan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL
- Publication number 20240194236
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Takashi Ando
- G11 - INFORMATION STORAGE
Information Patent Application
CAPACITOR, SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR, AND ELECTR...
- Publication number 20240170212
- Publication date May 23, 2024
- Samsung Electronics Co., Ltd.
- Jeonggyu SONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERROELECTRIC NANOPARTICLE CAPACITOR FOR NON-BINARY LOGICS
- Publication number 20240120366
- Publication date Apr 11, 2024
- Terra Quantum AG
- Anna Razumnaya
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF
- Publication number 20240088255
- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Miin-Jang CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME
- Publication number 20240088299
- Publication date Mar 14, 2024
- Kepler Computing Inc.
- Ramesh Ramamoorthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR CONNECTIONS IN DIELECTRIC LAYERS
- Publication number 20240049450
- Publication date Feb 8, 2024
- Intel Corporation
- Travis W. LAJOIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240030278
- Publication date Jan 25, 2024
- Samsung Electronics Co., Ltd.
- Jungmin PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240030277
- Publication date Jan 25, 2024
- Samsung Electronics Co., Ltd.
- Jungmin Park
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Ferroelectric Film with Buffer Layers for Improved Reliability of M...
- Publication number 20230420491
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Kisik Choi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES
- Publication number 20230411443
- Publication date Dec 21, 2023
- Intel Corporation
- Kaan OGUZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY METAL LAYERS IN ELECTRODE STACKS FOR TRANSITION METAL...
- Publication number 20230402499
- Publication date Dec 14, 2023
- Intel Corporation
- Thomas Sounart
- H01 - BASIC ELECTRIC ELEMENTS

comprising a noble metal or a noble metal oxide

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Barrier layer for metal insulator metal capacitors

Barrier layer for metal insulator metal capacitors

Capacitor structure and forming method thereof

Method of fabricating pedestal based memory devices using pocket in...

Crystalline bottom electrode for perovskite capacitors and methods...

Rapid thermal annealing (RTA) methodologies for integration of pero...

Capacitor structure, semiconductor memory device including the same...

Majority gate based low power ferroelectric based adder with reset...

Capacitor and electronic device including the same

Pocket integration process for embedded memory

Semiconductor devices

Ferroelectric capacitors and methods of fabrication

Trench capacitors with continuous dielectric layer and methods of f...

Semiconductor device and semiconductor apparatus including the same

Capacitor and memory device

Semiconductor device and semiconductor storage device

Dual hydrogen barrier layer for trench capacitors integrated with l...

Metal-insulator-metal capacitor

Doped polar layers and semiconductor device incorporating same

Memory cell, capacitive memory structure, and methods thereof

Doped polar layers and semiconductor device incorporating same

Pedestal-based pocket integration process for embedded memory

Ferroelectric random access memory (FRAM) capacitors and methods of...

Multi-layer electrode to improve performance of ferroelectric memor...

Doped polar layers and semiconductor device incorporating same

Manganese-doped perovskite layers and semiconductor device incorpor...

Method of fabricating a perovskite-material based planar capacitor...

Method of fabricating a perovskite-material based trench capacitor...

B-site doped perovskite layers and semiconductor device incorporati...

Doped polar layers and semiconductor device incorporating same

Patents Applicationslast 30 patents

SEMICONDUCTOR PACKAGE

CAPACITOR STRUCTURE AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME

CAPACITOR STRUCTURE INTEGRATED WITH CONTACT PAD STRUCTURE

CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

STRONTIUM OXIDE INTERLAYERS FOR IMPROVED ELECTRICAL DEVICE PERFORMANCE

CAPACITOR AND ELECTRONIC DEVICE INCLUDING THE SAME

METHOD OF FORMING A MAJORITY GATE BASED LOW POWER FERROELECTRIC BAS...

FERROELECTRIC CAPACITORS AND METHODS OF FABRICATION

SEMICONDUCTOR DEVICES

SEMICONDUCTOR MEMORY DEVICE

CAPACITOR AND MEMORY DEVICE

CONCURRENT COMPENSATION IN A MEMORY SYSTEM

CAPACITOR, METHOD OF PREPARING THE SAME, AND ELECTRONIC DEVICE INCL...

CAPACITOR AND DEVICE INCLUDING THE SAME

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR APPARATUS AND ELECTRONIC APP...

METAL-INSULATOR-METAL CAPACITOR

CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME

FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE

NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL

CAPACITOR, SEMICONDUCTOR DEVICE INCLUDING THE CAPACITOR, AND ELECTR...

FERROELECTRIC NANOPARTICLE CAPACITOR FOR NON-BINARY LOGICS

SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF

DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME

CAPACITOR CONNECTIONS IN DIELECTRIC LAYERS

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Ferroelectric Film with Buffer Layers for Improved Reliability of M...

METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES

HIGH DENSITY METAL LAYERS IN ELECTRODE STACKS FOR TRANSITION METAL...