The present disclosure relates to a carrier head for chemical mechanical polishing.
Integrated circuits are typically formed on substrates, particularly silicon wafers, by the sequential deposition of conductive, semiconductive or insulative layers. One fabrication step involves depositing a filler layer over a non-planar surface and planarizing the filler layer. For certain applications, the filler layer is planarized until the top surface of a patterned layer is exposed. A conductive filler layer, for example, can be deposited on a patterned insulative layer to fill the trenches or holes in the insulative layer. After planarization, the portions of the conductive layer remaining between the raised pattern of the insulative layer form vias, plugs, and lines that provide conductive paths between thin film circuits on the substrate. For other applications, such as oxide polishing, the filler layer is planarized until a predetermined thickness is left over the non planar surface. In addition, planarization of the substrate surface is usually required for photolithography.
Chemical mechanical polishing (CMP) is one accepted method of planarization.
This planarization method typically requires that the substrate be mounted on a carrier head. The exposed surface of the substrate is typically placed against a rotating polishing pad. The carrier head provides a controllable load on the substrate to push it against the polishing pad. A polishing liquid, such as a slurry with abrasive particles, is typically supplied to the surface of the polishing pad.
The substrate is typically retained below the carrier head by a retaining ring. However, because the retaining ring contacts the polishing pad, the retaining ring tends to wear away, and is occasionally replaced.
Retaining rings can be expensive, and as noted above, need to be periodically replaced when worn. One technique to extend the lifetime of a retaining ring is to insert a shim between the retaining ring and the base of the carrier head. This can move the bottom surface of the retaining ring into the appropriate position. In fact, multiple shims could be used to further extend the lifetime of the retaining ring. Material composition of the shim can be important to provide the proper mechanical interaction of the retaining ring with the polishing pad.
In one aspect, a carrier head includes a base, a substrate mounting surface, a retaining ring secured to the base, and a plurality of stacked shims located between the base and the retaining ring. The retaining ring has a bottom surface for contacting a polishing pad during polishing.
Implementations can include one or more of the following features. The plurality of stacked shims may include a first shim and a second shim, and the first shim may be thicker than the second shim. The first shim may be closer to the retaining ring than the second shim. The first shim may be about 90 mils thick, and the second shim may be about 30 mils thick. A plurality of screws may secure the retaining ring to the base, and the plurality of screws may pass through the plurality of stacked shims. A plurality of slurry-transport channels may be formed on the bottom surface of the retaining ring. The retaining ring may include a lower portion of a first material having the bottom surface and an upper portion of a second material that is more rigid than the lower portion. The first material may be PPS and the second material may be stainless steel. The shim may be stainless steel. A lower surface of a flexible membrane may provide the substrate mounting surface, and an edge portion of the flexible membrane may be clamped between an uppermost shim of the plurality of stacked shims and the base.
In another aspect, a method of using a retaining ring includes securing the retaining ring to a base in a carrier head without a shim between the base and the retaining ring, polishing a first plurality of substrates with the carrier head with a lower surface of the retaining ring contacting a polishing surface, removing the retaining ring from the carrier head after the lower surface of the ring has been worn by a first amount, re-securing the retaining ring to the carrier head with a first shim between the base and the retaining ring to compensate for the first amount of wear, polishing a second plurality of substrates with the carrier head, removing the retaining ring from the carrier head after the lower surface of the ring has been worn by a second amount, and re-securing the retaining ring to the carrier head with the first shim and a second shim between the base and the retaining ring to compensate for the second amount of wear.
Implementations can include one or more of the following features. The first amount may be greater than the second amount. A thickness of the first shim may be greater than a thickness of the second shim. The first shim may be about 90 mils thick, and the second shim may be about 30 mils thick. The retaining ring may be secured to the base with a plurality of screws that pass through the plurality of stacked shims. Slurry may be transported through a plurality of slurry-transport channels formed on the bottom surface of the retaining ring. The first shim may have a first thickness about equal to the first amount and the second shim may have a second thickness about equal to the second amount.
The details of one or more implementations are set forth in the accompanying drawings and the description below. Other features, objects, and advantages will be apparent from the description and drawings, and from the claims.
Like reference symbols in the various drawings indicate like elements.
During a polishing operation, one or more substrates can be polished by a chemical mechanical polishing (CMP) apparatus that includes a carrier head 100. A description of a CMP apparatus can be found in U.S. Pat. No. 5,738,574.
Referring to
The retaining ring 110 may be a generally annular ring secured at the outer edge of the base 102, e.g., by screws or bolts 136 (only one is shown in
An inner surface 116 of retaining ring 110 defines, in conjunction with the lower surface of the flexible membrane 104, a substrate receiving recess. The retaining ring 110 prevents the substrate from escaping the substrate receiving recess. The bottom surface 114 of the retaining ring 110 can be substantially flat, or as shown in
Referring to
Referring to
The retaining ring can be a high precision part, and once the retaining ring has been worn away by a certain amount, e.g., 40 mils, the carrier head may not function properly. For example, the lower surface 114 of the retaining ring might not contact the polishing pad with the appropriate pressure during polishing. However, the shim 160 increases the distance between the base 104 and the lower surface 114 of the retaining ring 110 to maintain proper function of the carrier head. This permits the user to reuse the retaining ring 110 rather than purchase a new retaining ring. The channels 130 may need to be deeper to accommodate the increased use of the retaining ring.
In some implementations, the shim 160 can be about 90 mils thick, and can be inserted after about 90 mils of the retaining ring have been worn away, e.g., when the lower portion 140 has a thickness T2 of about 250 mils and the grooves have a depth D of about 150 mils.
The refurbishment process can be repeated multiple times. In this case, a second shim 162 can be placed between the retaining ring 110 and the base 104. The thickness of the second shim 162 can be the same as the amount by which the retaining ring has worn away after insertion of the first shim 160. The second shim 162 can be placed above or below the first shim 160. The second shim 162 can be thinner than the first shim 160. The second shim 162 can be formed of the same material as the first shim 160.
In some implementations, the second shim 162 can be about 30 mils thick, and can be inserted after about another 30 mils of the retaining ring have been worn away, e.g., when the lower portion 140 has a thickness T2 of 220 mils and the grooves have a depth D of about 120 mils. It can be possible to polish with such a retaining ring until the grooves have a depth of about 30 mils and the lower portion has a thickness T2 of about 130 mils.
A number of implementations have been described. Nevertheless, it will be understood that various modifications may be made. Accordingly, other implementations are within the scope of the following claims.
This application claims priority to U.S. application Ser. No. 61/475,167, filed on Apr. 13, 2011, which is incorporated by reference.
Number | Date | Country | |
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61475167 | Apr 2011 | US |