Claims
- 1. A process for electroless metal deposition onto a non-conductor surface (1) contacting said surface with a colloidal catalytic composition comprising the admixture of a principal catalytic agent wherein said principal catalytic agent is a compound of a metal selected from the groups of metals consisting of copper, nickel, cobalt, and iron and mixtures thereof and a catalytic promoter agent wherein said catalytic promoter agent is a compound of a metal selected from the group of metals consisting of Mg, Ca, Y, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Tc and Re and mixtures thereof and further said catalytic promoter is added prior to the colloidal nucleation process in which the principal catalytic agent is allowed to react as to yield a colloid, and further wherein the concentrations for the principal catalytic agent and the catalytic promoter agent are so adjusted as to yield a catalytic composition having a greater catalytic activity for electroless metal deposition in comparison to the same catalytic composition in the absence of said catalytic promoter agent, and (2) contacting the treated non-conductor with a compatible electroless plating bath to deposit a metallic layer.
- 2. The process according to claim 1 wherein said catalytic promoter agent is selected from at least one member of the group consisting of chromium, vanadium, molybdenum, tungstem and zirconium.
- 3. The process according to claim 1 wherein said electroless metal deposition is electroless copper.
- 4. The process according to claim 1 wherein said electroless metal deposition yields an image intensification.
- 5. The process according to claim 1 wherein said principal catalytic agent is a compound containing copper.
- 6. The process according to claim 1 further containing the step of activation and wherein said activation step is devoid of precious metal(s).
- 7. The process according to claim 6 further containing the step of electroless deposition.
- 8. The process according to claim 1 wherein said non-conductor is ABS.
- 9. The process according to claim 1 wherein said catalytic promoter agent is a compound of a metal selected from the group of metals consisting of Zr, Hf, V, Cr, Mo, W,.
- 10. The process according to claim 1 wherein said principal catalytic agent is a compound of copper and further contains a nickel compound.
- 11. The process according to claim 1 wherein said principal catalytic agent is a copper compound and further contains a compound of cobalt.
- 12. The process according to claim 1 wherein the concentration of the principal catalytic agent is greater than the concentration of the catalytic promoter agent.
- 13. The process according to claim 1 further containing the step of activation whereby the induction time for the actual metal deposition is reduced.
- 14. The process according to claim 13 wherein said activation comprises a reduction step and wherein said reduction may be effected via chemical reducing agent or light or heat and combinations thereof.
- 15. The process according to claim 1 wherein the concentration of said catalytic promoter agent is from about 0.12 g/l to about 1.2 g/l.
- 16. The process according to claim 1 wherein said colloidal catalytic composition is in an alkaline pH.
- 17. The process according to claim 1 further containing the step of water rinsing.
- 18. The process according to claim 1 wherein said colloidal catalytic composition further contains at least one colloid stabilizer.
- 19. The process according to claim 1 further containing the step of activation and wherein said activation selectively removes colloid stabilizer present on the non-conductor surface after contacting said non-conductor surface with said colloidal catalytic composition.
- 20. The process according to claim 1 further containing the step of drying.
- 21. The process according to claim 1 wherein said non-conductor is preconditioned prior to contacting with said said colloidal catalytic composition.
- 22. The process according to claim 1 wherein said non-conductor is a printed circuitry type substrate.
Parent Case Info
This is a division of application Ser. No. 833,905 filed Sept. 16, 1977, now U.S. Pat. No. 4,151,311 which was a continuation-in-part of U.S. application Ser. No. 651,507 filed Jan. 22, 1976, abandoned.
US Referenced Citations (3)
Divisions (1)
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Number |
Date |
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Parent |
833905 |
Sep 1977 |
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Continuation in Parts (1)
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Number |
Date |
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Parent |
651507 |
Jan 1976 |
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