Claims
- 1. A CCD solid state image sensing device comprising:
- a semiconductor substrate which has a p-type region that extends to a first surface of the semiconductor substrate;
- a photosensitive section formed of an n-type impurity diffusion region within said p-type region which forms a pixel, said n-type impurity diffusion region formed by implanting arsenic at a depth of 0.3 .mu.m to 0.4 .mu.m which extends from said first surface of the semiconductor substrate; and
- further comprising a gate insulating layer comprising a composite oxide/nitride/oxide insulating film formed on a vertical register region which is formed adjacent said photosensitive section in said substrate and the gate insulating layer does not overlap the photosensitive section wherein the edge of the gate insulating layer is aligned with the edge of the photosensitive section.
Priority Claims (1)
Number |
Date |
Country |
Kind |
3-051464 |
Mar 1991 |
JPX |
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Parent Case Info
This is a division of application Ser. No. 08/065,681, filed May 11, 1993, now U.S. Pat. No. 5,476,808 which is a continuation of Ser. No. 07/851,336 filed Mar. 16, 1992, now abandoned.
US Referenced Citations (1)
Number |
Name |
Date |
Kind |
5189499 |
Izumi et al. |
Feb 1993 |
|
Foreign Referenced Citations (1)
Number |
Date |
Country |
63-102380 |
May 1988 |
JPX |
Non-Patent Literature Citations (1)
Entry |
Koch, "Charge-Injection Device with CCD Readout", IEEE Jour. of Sol. Stat. Cir., vol. SC-14, No. 3, Jun. 1979. |
Divisions (1)
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Number |
Date |
Country |
Parent |
65681 |
May 1993 |
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Continuations (1)
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Number |
Date |
Country |
Parent |
851336 |
Mar 1992 |
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