the potential barrier being of the PN homojunction type

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H01L31/103

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof Details thereof

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H01L31/103the potential barrier being of the PN homojunction type

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Patents Grantslast 30 patents

Information Patent Grant
Monitoring copper corrosion in an integrated circuit device
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- Microchip Technology Incorporated
- Yaojian Leng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a uv-radiation detector device based on si...
- Patent number 12,125,933
- Issue date Oct 22, 2024
- STMicroelectronics S.r.l.
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Information Patent Grant
LIDAR sensor using compound semiconductor materials for mobile device
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- Issue date Oct 1, 2024
- Aeluma, Inc.
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Information Patent Grant
Dielectric sidewall structure for quality improvement in Ge and SiG...
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- Issue date Sep 17, 2024
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Information Patent Grant
Integrated photodetector
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- Debarshi Basu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide-based lateral PN junction extreme ultraviolet detec...
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- Issue date Sep 3, 2024
- Nanjing University
- Hai Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating planar infrared photodetectors
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- Issue date Sep 3, 2024
- Northwestern University
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Information Patent Grant
High-speed light sensing apparatus
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-semiconductor layer photodetector and related method
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Information Patent Grant
Germanium-containing photodetector and methods of forming the same
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Information Patent Grant
High speed photosensitive devices and associated methods
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Information Patent Grant
Semiconductor light receiving element
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Information Patent Grant
Optically synchronized phased array
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Information Patent Grant
Time of flight sensor device and time of flight sensor arrangement
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Information Patent Grant
Optical module and method for manufacturing the same
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Information Patent Grant
Superlattice photo detector
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Information Patent Grant
Waveguide photodetector
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ cap for germanium photodetector
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light receiving element and ranging module having a plurality of pi...
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Information Patent Grant
Semiconductor light-receiving element
- Patent number 11,916,161
- Issue date Feb 27, 2024
- Lumentum Japan, Inc.
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photodetector
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low leakage current germanium-on-silicon photo-devices
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical device with stress buffer layer and stress compensation...
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Information Patent Grant
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Information Patent Grant
Plasmonic field-enhanced photodetector and image sensor using light...
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- Issue date Jan 30, 2024
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Information Patent Grant
PN junction and preparation method and use thereof
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Semiconductor nanoparticles, electronic device including the same,...
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Information Patent Grant
Image sensor device
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capping structures for germanium-containing photovoltaic components...
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- Issue date Dec 19, 2023
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- Chen-Hao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Photo detector systems and methods of operating same
- Patent number 11,837,669
- Issue date Dec 5, 2023
- ACTLIGHT S.A.
- Denis Sallin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
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INTEGRATED BOUND-MODE SPECTRAL/ANGULAR SENSORS
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HIGH-SPEED LIGHT SENSING APPARATUS
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DIELECTRIC SIDEWALL STRUCTURE FOR QUALITY IMPROVEMENT IN GE AND SIG...
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GERMANIUM-CONTAINING PHOTODETECTOR AND METHODS OF FORMING THE SAME
- Publication number 20240355953
- Publication date Oct 24, 2024
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MAKING
- Publication number 20240347662
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Information Patent Application
Photodiodes
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Photodiodes
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Information Patent Application
Advanced UV Reference Photodiode
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- X-FAB Global Services GmbH
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Information Patent Application
DETECTOR AND DETECTION SYSTEM
- Publication number 20240266458
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- Canon Kabushiki Kaisha
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Information Patent Application
CANAL DYNAMIC PHOTODIODES
- Publication number 20240222531
- Publication date Jul 4, 2024
- Maxim Integrated Products, Inc.
- Chuan Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL SILICON CARBIDE-BASED LATERAL PN JUNCTION EXTREME ULTRAVIOLET...
- Publication number 20240204126
- Publication date Jun 20, 2024
- Nanjing University
- Hai LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU CAP FOR GERMANIUM PHOTODETECTOR
- Publication number 20240204120
- Publication date Jun 20, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hao Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE OF ULTRAVIOLET LIGHT SENSING-ENHANCED PHOTODIODE
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- Taiwan-Asia Semiconductor Corporation
- Chuan-Wei CHEN
- B82 - NANO-TECHNOLOGY
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PHOTODETECTOR WITH ROTATED ELECTRIC FIELD
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- Cisco Technology, Inc.
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- H01 - BASIC ELECTRIC ELEMENTS
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PHOTODIODE WITH INSULATOR LAYER ALONG INTRINSIC REGION SIDEWALL
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- GLOBALFOUNDRIES U.S. Inc.
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- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HgZnTe DETECTOR ON SILICON SUBSTRATE
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- Publication date May 23, 2024
- Raytheon Company
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Information Patent Application
LIGHT-CONVERSION LAYER AND PHOTOVOLTAIC SYSTEM
- Publication number 20240170598
- Publication date May 23, 2024
- Swiss Solar Space SA
- Nasser HEFIANA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHIP LEVEL PACKAGE PHOTODIODE
- Publication number 20240162355
- Publication date May 16, 2024
- Vishay Semiconductor GmbH
- Manuel Schmidt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMONIC FIELD-ENHANCED PHOTODETECTOR AND IMAGE SENSOR USING LIGHT...
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- Publication date May 2, 2024
- Hoon KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING A PHOTODIODE
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- Publication date Mar 28, 2024
- Vishay Semiconductor GmbH
- Manuel SCHMIDT
- H01 - BASIC ELECTRIC ELEMENTS
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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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- Rohm Co., Ltd.
- Yushi Sekiguchi
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IMAGE SENSOR DEVICE
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- Publication date Mar 14, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Yu WEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTO SENSOR CELL, PHOTO SENSOR AND METHOD
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- Publication date Feb 1, 2024
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- Rajesh GUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE, SYSTEM, AND MOVING BODY
- Publication number 20240006456
- Publication date Jan 4, 2024
- Canon Kabushiki Kaisha
- Kazuhiro Morimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMONIC FIELD-ENHANCED PHOTODETECTOR AND IMAGE SENSOR
- Publication number 20230402556
- Publication date Dec 14, 2023
- Hoon KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-SPEED LIGHT SENSING APPARATUS
- Publication number 20230393248
- Publication date Dec 7, 2023
- Artilux, Inc.
- Yun-Chung Na
- G01 - MEASURING TESTING
Information Patent Application
PHOTODETECTORS AND PHOTODETECTOR ARRAYS
- Publication number 20230378386
- Publication date Nov 23, 2023
- ActLight S.A.
- Maxim GUREEV
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTODETECTORS AND METHODS OF FORMATION
- Publication number 20230369526
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Hao CHIANG
- H01 - BASIC ELECTRIC ELEMENTS

the potential barrier being of the PN homojunction type

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Monitoring copper corrosion in an integrated circuit device

Method for manufacturing a uv-radiation detector device based on si...

LIDAR sensor using compound semiconductor materials for mobile device

Dielectric sidewall structure for quality improvement in Ge and SiG...

Integrated photodetector

Silicon carbide-based lateral PN junction extreme ultraviolet detec...

Methods of fabricating planar infrared photodetectors

High-speed light sensing apparatus

Multi-semiconductor layer photodetector and related method

Germanium-containing photodetector and methods of forming the same

High speed photosensitive devices and associated methods

Semiconductor light receiving element

Optically synchronized phased array

Time of flight sensor device and time of flight sensor arrangement

Optical module and method for manufacturing the same

Superlattice photo detector

Waveguide photodetector

In-situ cap for germanium photodetector

Light receiving element and ranging module having a plurality of pi...

Semiconductor light-receiving element

Photodetector

Low leakage current germanium-on-silicon photo-devices

Electrical device with stress buffer layer and stress compensation...

Photodetector

Plasmonic field-enhanced photodetector and image sensor using light...

PN junction and preparation method and use thereof

Semiconductor nanoparticles, electronic device including the same,...

Image sensor device

Capping structures for germanium-containing photovoltaic components...

Photo detector systems and methods of operating same

Patents Applicationslast 30 patents

DETECTOR ELEMENT AND METHOD FOR OPERATING A LIDAR MODULE

Integrated Photodetector

INTEGRATED BOUND-MODE SPECTRAL/ANGULAR SENSORS

HIGH-SPEED LIGHT SENSING APPARATUS

DIELECTRIC SIDEWALL STRUCTURE FOR QUALITY IMPROVEMENT IN GE AND SIG...

GERMANIUM-CONTAINING PHOTODETECTOR AND METHODS OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MAKING

Photodiodes

Photodiodes

Advanced UV Reference Photodiode

DETECTOR AND DETECTION SYSTEM

CANAL DYNAMIC PHOTODIODES

NOVEL SILICON CARBIDE-BASED LATERAL PN JUNCTION EXTREME ULTRAVIOLET...

IN-SITU CAP FOR GERMANIUM PHOTODETECTOR

STRUCTURE OF ULTRAVIOLET LIGHT SENSING-ENHANCED PHOTODIODE

PHOTODETECTOR WITH ROTATED ELECTRIC FIELD

PHOTODIODE WITH INSULATOR LAYER ALONG INTRINSIC REGION SIDEWALL

HgZnTe DETECTOR ON SILICON SUBSTRATE

LIGHT-CONVERSION LAYER AND PHOTOVOLTAIC SYSTEM

CHIP LEVEL PACKAGE PHOTODIODE

PLASMONIC FIELD-ENHANCED PHOTODETECTOR AND IMAGE SENSOR USING LIGHT...

METHOD FOR PRODUCING A PHOTODIODE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

IMAGE SENSOR DEVICE

PHOTO SENSOR CELL, PHOTO SENSOR AND METHOD

DEVICE, SYSTEM, AND MOVING BODY

PLASMONIC FIELD-ENHANCED PHOTODETECTOR AND IMAGE SENSOR

HIGH-SPEED LIGHT SENSING APPARATUS

PHOTODETECTORS AND PHOTODETECTOR ARRAYS

PHOTODETECTORS AND METHODS OF FORMATION