CERAMIC COATING MEMBER FOR SEMICONDUCTOR PROCESSING APPARATUS

Abstract

Improving the resistance of members and parts disposed inside of vessels such as semiconductor processing devices for conducting plasma etching treatment in a strong corrosive environment.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a partial section view illustrating (a) a member having the conventional spray coating, (b) a member having a secondary recrystallized layer as an outermost layer and (c) a member having an undercoat.

FIG. 2 is an X-ray diffraction view of a secondary recrystallized layer produced by subjecting a spray coating (porous layer) to an electron beam irradiation treatment.

FIG. 3 is an X-ray diffraction view of Y₂O₃ spray coating before an electron beam irradiation treatment.

FIG. 4 is an X-ray diffraction view of a secondary recrystallized layer after an electron beam irradiation treatment.

Claims

1. A ceramic coating member for a semiconductor processing apparatus comprising a substrate, a porous layer coated onto a surface of the substrate and made of an oxide of an element in Group IIIa of the Periodic Table, and a secondary recrystallized layer of the oxide formed on the porous layer.

2. A ceramic coating member for a semiconductor processing apparatus according to claim 1, wherein an undercoat is disposed between the substrate and the porous layer.

3. A ceramic coating member for a semiconductor processing apparatus according to claim 1 or 2, wherein the substrate is (i) aluminum and an alloy thereof, titanium and an alloy thereof, stainless steel and other special steels, Ni-based alloy, and other metals and alloys thereof, (ii) a ceramic of quartz, glass, an oxide, a carbide, a boride, a silicide, a nitride or a mixture thereof, (iii) a cermet of the above ceramic and the above metal or alloy, (iv) plastics, and (v) a metal plating (electric plating, fusion plating, chemical plating) or a metal deposited film formed on the surface of the above material (i)-(iv).

4. A ceramic coating member for a semiconductor processing apparatus according to claim 1 or 2, wherein the porous layer is an oxide of Sc, Y or a lanthanide of atom number 57-71 (La, Ce, Pr, Nb, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu).

5. A ceramic coating member for a semiconductor processing apparatus according to claim 1 or 2, wherein the porous layer is a spray coating having a layer thickness of about 50-2000 μm and a porosity of about 5-20%.

6. A ceramic coating member for a semiconductor processing apparatus according to claim 1 or 2, wherein the secondary recrystallized layer is a high energy irradiation treated layer formed by changing a primary transformed oxide included in the porous layer into a secondary transformed one through a high energy irradiation treatment.

7. A ceramic coating member for a semiconductor processing apparatus according to claim 1 or 2, wherein the secondary recrystalized layer is characterized in that a porous layer containing a rhombic crystal is a layer having a tetragonal crystal structure by secondary transformation through a high energy irradiation treatment and a porosity of less than 5%.

8. A ceramic coating member for a semiconductor processing apparatus according to claim 1 or 2, wherein the secondary recrystallized layer is a layer formed by subjecting a primary transformed spray coating of yttrium oxide consisting of a cubic crystal and a monoclininc crystal to a high energy irradiation treatment to render into a secondary transformed cubic crystal.

9. A ceramic coating member for a semiconductor processing apparatus according to claim 1 or 2, wherein the secondary recrystallized layer has a maximum roughness (Ry) of about 6-16 μm.

10. A ceramic coating member for a semiconductor processing apparatus according to claim 1 or 2, wherein the secondary recrystallized layer has an average roughness (Ra) of about 3-6 μm.

11. A ceramic coating member for a semiconductor processing apparatus according to claim 1 or 2, wherein the secondary recrystallized layer has a 10-point average roughness (Rz) of about 8-24 μm.

12. A ceramic coating member for a semiconductor processing apparatus according to claim 1 or 2, wherein the secondary recrystallized layer has a total layer thickness of about 100 μm or less.

13. A ceramic coating member for a semiconductor processing apparatus according to claim 1 or 2, wherein the undercoat is a coating film made of at least one selected from Ni, Al, W, Mo, Ti and an alloy thereof, at least one ceramic of an oxide, a nitride, a boride and a carbide and a cermet consisting of the above metal, alloy and ceramic and having a thickness of about 50-500 μm.

14. A ceramic coating member for a semiconductor processing apparatus according to claim 6, wherein the high energy irradiation treatment is a treatment of an electron beam irradiation or a laser beam irradiation.

15. A ceramic coating member for a semiconductor processing apparatus according to claim 7, wherein the high energy irradiation treatment is a treatment of an electron beam irradiation or a laser beam irradiation.