The present invention relates generally to semiconductor wafer processing and more specifically to an end effector for handling semiconductor wafers during processing.
Thermal processing systems are widely used in various stages of semiconductor fabrication. Basic thermal processing applications include chemical deposition, diffusion, oxidation, annealing, silicidation, nitridation, and solder re-flow processes. Many of these thermal processes involve extremely high temperatures. For example, vertical rapid thermal processing (RTP) systems comprise a vertically oriented processing chamber that is heated by a heat source such as a resistive heating element or a bank of high intensity light sources. The heat source is capable of heating the interior of the processing chamber to temperatures in the range of 450-1400 degrees Centigrade at ramp rates of up to about 50 degree C./sec.
Semiconductor thermal processing must be performed in an environment that is relatively free of contamination. One source of contamination that is detrimental to thermal processes is metal. For example, metals such as iron, sodium, and chromium in concentrations as little as 1×e10 atoms per cubic centimeter will significantly lower the yield from a wafer. Some vacuum type end effectors have metal components such as vacuum lines that make them susceptible to metal contamination within the processing chamber.
To maximize throughput and minimize contamination, all of the operations that occur during thermal processing of semiconductor wafers are automated. Robotic handlers routinely move wafers into and out of processing chambers. These handlers often employ end effectors disposed at the end of a robotic arm to grip and manipulate the wafer. Key features of end effectors include reliable gripping and minimal impact on the wafer surface. One type of end effector features one or more vacuum devices mounted on the end effector that use suction to grip the wafer and to give a positive indication that the wafer is positioned properly. Some existing vacuum type end effectors have plastic components such as wafer support pads that are not suitable for high temperature thermal processes because they would melt on contact with the heated wafer.
A ceramic end effector with an interior passage for vacuum provides relatively low cost, lightweight, and contaminate free wafer handling for high temperature thermal processing applications.
An end effector for installation on a robotic arm for transporting a plurality of semiconductor wafers from one location to another is provided that features a ceramic end effector body portion that includes a plurality of wafer support pads. The wafer support pads are adapted to support a semiconductor wafer surface, and at least one of the support pads has a vacuum orifice.
The support pads are secured to the end effector utilizing a unique spring which through its action forces the support pad in a downward direction against the body portion. The spring additionally forces that pad forward against an angled surface on the body. The pad is thus forced downward and into contact with the body at the angled interface as well. The surface of the bottom of the pad and that of the mating surface of the body are ground to a high degree of flatness to effect a seal that has very low leakage. The pad and body in this configuration may expand or contract at different rates as well as move relative to each other without affecting the seal or introducing stressed into either component. The underside of the vacuum pad features a counterbore which when exposed to negative pressure results in a net downward force against the end effector body thus improving the effectiveness of the seal between the pad and the end effector body. The pads are conveniently removable and/or replaceable in the event of damage or contamination.
The body portion features an interior vacuum passageway having a first end that is adapted to connect to a vacuum source and a second end that terminates at the vacuum aperture such that a reduced gas pressure at the first end causes a vacuum to be exerted at the vacuum aperture. In one embodiment, the interior passageway is formed from a groove in the end effector body portion and an end effector backplate that is sealingly connected to the end effector body portion to completely cover the groove from the first end to the second end. The ceramic body portion can be made of alumina or silicon carbide. In an exemplary embodiment, the end effector has three wafer engaging fingers, two of which have wafer support pads that include vacuum orifices.
Within the body portion 25, an interior vacuum passageway 37 (shown in phantom in
Referring now to
The wire spring 50 extends through a first section of the flared wall portion 27a in a bore 53a. The bore 53a terminates at the outer peripheral edge of the vacuum support pad cavity 31 thus exposing the wire spring 50 to the vacuum support pad cavity 31. The wire spring 50 further extends across the entire length of the vacuum support pad cavity 31 into a bore 53b in a second section of the flared wall portion 27a. The bore 53b extends through the second section of the flared wall portion 27b providing a path for the wire spring 50 to extend through and protrude out of the flared wall portion 27b. The area of the wire spring 50 that is exposed in the vacuum support pad cavity 31 provides torsional forces on a vacuum support pad 33 within the vacuum support pad cavity 31. The torsional forces from the spring 50 are a result of the vacuum support pad 33 in the vacuum support pad cavity 31 displacing the wire spring 50 from its natural position within the vacuum support pad cavity 31. In this arrangement, the wire spring 50 forces the vacuum support pad 33 forward and downward to make contact the beveled wall 54 of the vacuum support pad cavity 31.
The pad further includes a bottom surface 71 having a portion of which is raised creating an annular sealing surface 73. The sealing surface 73 sealingly engages the bottom surface 57 of the vacuum support pad cavity 31. Both the annular sealing surface 73 of the vacuum support pad 33 and the bottom surface 57 of the vacuum support pad cavity 31 are ground to a relatively high degree of flatness to provide a seal with very low leakage. The bottom surface 71 further includes a counter bore area 75 having the vacuum orifice 65 generally it's center. During operation, the vacuum aperture 34 is in fluid communication with the vacuum orifice 65 of the vacuum support pad 33 such that a vacuum pressure can be communicated through the vacuum support pad 33 to a wafer contacting the wafer engaging surface 63. Further, the counter bore area 75 when exposed to the negative pressure of the vacuum enhances the net downward force of the vacuum support pad 33 resulting in the annular sealing surface 73 of the vacuum support pad 33 to sealingly engage with very low leakage the bottom 57 surface of the vacuum support pad cavity 31.
Turning now to
The non-vacuum support pad cavity 81 extends partially into the body of the support finger 29 and includes a wall bevel 85 that angles into the body and away from the central axis of the non-vacuum support pad cavity 81. The non-vacuum support pad 77 includes a wafer engaging surface 87 and a support engaging surface 89. The support engaging surface 89 has a greater diameter than the wafer engaging surface 87 creating the wall bevel 85 around the outer perimeter of the non-vacuum support pad 77. When the non-vacuum support pad 77 is in its operational location, the wire spring 50 rests on the bevel 85 providing torsional force to the non-vacuum support pad 77. This force, because of the bevel, causes the non-vacuum support pad 77 to be forced downward against the non-vacuum support pad cavity bottom 91 and forward into the beveled wall 85. The bevel on the outer perimeter of the non-vacuum support pad 77 interlocks with the wall bevel 85 in the non-vacuum support pad cavity wall, thus locking the non-vacuum support pad 77 in the non-vacuum support pad cavity 81. The support finger 29 does not include a vacuum passageway and, as such, the non-vacuum support pad 77 does not require a vacuum orifice nor does the cavity bottom 91 include a vacuum aperture. The non-vacuum support pad 77 merely supports a portion of a wafer during operation of the robotic arm 20.
Although the present invention has been described with a degree of particularity, it is the intent that the invention include all modifications and alterations from the disclosed design falling within the spirit or scope of the appended claims.
The present application is a continuation-in-part application of U.S. application Ser. No. 10/305,731, filed Nov. 26, 2002 and entitled CERAMIC END EFFECTOR FOR MICRO CIRCUIT MANUFACTURING.
Number | Date | Country | |
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Parent | 10305731 | Nov 2002 | US |
Child | 10981231 | Nov 2004 | US |