"Characterization of Electronic Gate Current in IGFET's Operating in the Linear and Saturation Regions" by P. E. Cottrell et al, 1977, Device and Research Conference, Jun. 1977. |
"IGFET Hot Electron Emission Model", by A. Phillips, Jr. et al, 1975 IEDM Digest Paper 3.3, pp. 39-42. |
"Optically Induced Injection of Hot Electrons into SiO2", by T. H. Ning et al, Journal of Applied Physics, Dec. 1974, pp. 5373-5378. |
"Threshold Instability in IGFET's Due to Emission of Leakage Electrons from Silicon Substrate Into Silicon Dioxide", by T. H. Ning et al, Applied Physics Letter, Aug. 1, 1976, pp. 198-200. |
"Hot-Electron Emission in N-Channel IGFET's", by P. E. Cottrell et al, 1979 IEEE, pp. 442-454. |
"Substrate Current-A Device and Process Monitor", by S. A. Abbas, 1974, IEDM Paper 17.7, pp. 404-407. |
IBM TDB, vol. 18, #8, Jan. 1976, p. 2455, "Detection of Hot-Electron Injection and Trapping in FET Devices", by El-Kareh et al. |
IBM TDB, vol. 19, #6, Nov. 1976, pp. 2119-2120, "MOSFET Hot-Electron Effect Characterization", by E. Kriese et al. |
IBM TDB, vol. 19, #5, Oct. 1976, pp. 1632-1633, "Hot Electron Monitor", by A. H. Auriemma et al. |