Ching-Yuan Cheng et al; “The Study of Delta-Doping Concentration Effect On a Novel Quantum-Weel Hemt Structure”; ICSE '96., 1996 IEEE International Conference on Semiconductor Eletronics, Proceedings (CAT. NO. 96TH8198), ICSE '96., 1996 IEEE International Conference on Semiconductor Electronics, Proceedings, Penang, Malaysia, Nov. 26-18, 1996, pp. 209-212, XP002171356, 1996, New York, NY, USA, IEEE, USA ISBN: 0-7803-3388-8, p. 210; figures 1,2. |
Werking J D et al; “High-Transconductance InAs/A1Sb Heterojunction Field-Effect Transistor with Delta-Doped A1Sb Upper Barriers”; IEEE Electronic Device Letters, US, IEEE Inc., New York, vol. 13, No. 3, Mar. 1, 1992, pp. 164-166, XP000369996, ISSN: 0741-3106. |