with delta or planar doped donor layer

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CPC
H01L29/7784

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7784with delta or planar doped donor layer

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Field effect transistor
- Patent number 11,876,128
- Issue date Jan 16, 2024
- Walter Tony Wohlmuth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 11,316,039
- Issue date Apr 26, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-Hsin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,971,617
- Issue date Apr 6, 2021
- INNOSCIENCE (ZHUHAI) TECHNOLOGYCO., LTD.
- Ronghui Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 10,727,328
- Issue date Jul 28, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chao-Hsin Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with graded back-barrier region
- Patent number 10,636,899
- Issue date Apr 28, 2020
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride epitaxial structure
- Patent number 10,629,718
- Issue date Apr 21, 2020
- GlobalWafers Co., Ltd.
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-operation depletion/enhancement mode high electron mobility tr...
- Patent number 10,566,449
- Issue date Feb 18, 2020
- Duet Microelectronics, Inc.
- John Bayruns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 10,529,841
- Issue date Jan 7, 2020
- Panasonic Corporation
- Ryo Kajitani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integration of group III nitride epitaxial layers
- Patent number 10,418,473
- Issue date Sep 17, 2019
- HRL Laboratories, LLC
- David F. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor substrate and method of forming a compound s...
- Patent number 10,403,496
- Issue date Sep 3, 2019
- Infineon Technologies Austria AG
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT transistors with improved electron mobility
- Patent number 10,396,192
- Issue date Aug 27, 2019
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming substrate structures and semiconductor components
- Patent number 10,388,736
- Issue date Aug 20, 2019
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor devices and method for fabricatin...
- Patent number 10,355,096
- Issue date Jul 16, 2019
- Vanguard International Semiconductor Corporation
- Hsin-Chih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure including high electron mobility transistor...
- Patent number 10,283,614
- Issue date May 7, 2019
- United Microelectronics Corp.
- Ming-Chang Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistor (HEMT) structure capable of prote...
- Patent number 10,269,948
- Issue date Apr 23, 2019
- Taiwan Semiconductor Manufacturing Company Ltd.
- Han-Chin Chiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 10,249,749
- Issue date Apr 2, 2019
- Fujitsu Limited
- Kozo Makiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and electrical device
- Patent number 10,243,058
- Issue date Mar 26, 2019
- Kabushiki Kaisha Toshiba
- Toshiya Yonehara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor devices
- Patent number 10,217,831
- Issue date Feb 26, 2019
- Vanguard International Semiconductor Corporation
- Hsin-Chih Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming contacts to quantum well transistors
- Patent number 10,177,249
- Issue date Jan 8, 2019
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extreme high mobility CMOS logic
- Patent number 10,141,437
- Issue date Nov 27, 2018
- Intel Corporation
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device and method of manufacturing the compo...
- Patent number 10,134,889
- Issue date Nov 20, 2018
- Fujitsu Limited
- Tsuyoshi Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with indium nitride layer
- Patent number 10,079,296
- Issue date Sep 18, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chen-Hao Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor element and nitride semiconductor package
- Patent number 10,062,565
- Issue date Aug 28, 2018
- Rohm Co., Ltd.
- Shinya Takado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with carrier injection mitigation...
- Patent number 10,038,085
- Issue date Jul 31, 2018
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a HEMT transistor and HEMT transistor with...
- Patent number 10,032,898
- Issue date Jul 24, 2018
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 10,002,956
- Issue date Jun 19, 2018
- Vanguard International Semiconductor Corporation
- Shin-Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-type diamond gate-GaN heterojunction FET structure
- Patent number 9,985,121
- Issue date May 29, 2018
- HRL Laboratories, LLC
- Kenneth R. Elliott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,960,572
- Issue date May 1, 2018
- Furukawa Electric Co., Ltd.
- Masayuki Iwami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic integration of group III nitride epitaxial layers
- Patent number 9,954,090
- Issue date Apr 24, 2018
- HRL Laboratories, LLC
- David F. Brown
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-electron-mobility transistor (HEMT) capable of protecting a II...
- Patent number 9,941,398
- Issue date Apr 10, 2018
- Taiwan Semiconductor Manufacturing Company Ltd.
- Han-Chin Chiu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FIELD EFFECT TRANSISTOR
- Publication number 20230080772
- Publication date Mar 16, 2023
- WALTER TONY WOHLMUTH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...
- Publication number 20210066482
- Publication date Mar 4, 2021
- Guangdong Zhineng Technology Co., Ltd.
- Zilan Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20200357908
- Publication date Nov 12, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chao-Hsin WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE EPITAXIAL STRUCTURE
- Publication number 20200098907
- Publication date Mar 26, 2020
- GLOBALWAFERS CO., LTD.
- Jia-Zhe Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-OPERATION DEPLETION/ENHANCEMENT MODE HIGH ELECTRON MOBILITY TR...
- Publication number 20190326425
- Publication date Oct 24, 2019
- Duet Microelectronics LLC
- John Bayruns
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20180350963
- Publication date Dec 6, 2018
- Fujitsu Limited
- Kozo MAKIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE
- Publication number 20180337041
- Publication date Nov 22, 2018
- Rohm Co., Ltd.
- Shinya Takado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A HEMT TRANSISTOR AND HEMT TRANSISTOR WITH...
- Publication number 20180323296
- Publication date Nov 8, 2018
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20180226501
- Publication date Aug 9, 2018
- Taiwan Semiconductor Manufacturing company Ltd.
- HAN-CHIN CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE
- Publication number 20180158678
- Publication date Jun 7, 2018
- Rohm Co., Ltd.
- Shinya Takado
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Electron Mobility Transistor with Graded Back-Barrier Region
- Publication number 20180138304
- Publication date May 17, 2018
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A HEMT TRANSISTOR AND HEMT TRANSISTOR WITH...
- Publication number 20180108767
- Publication date Apr 19, 2018
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Substrate Structures and Semiconductor Components
- Publication number 20180047813
- Publication date Feb 15, 2018
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compound Semiconductor Substrate and Method of Forming a Compound S...
- Publication number 20170365464
- Publication date Dec 21, 2017
- Infineon Technologies Austria AG
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTREME HIGH MOBILITY CMOS LOGIC
- Publication number 20170309734
- Publication date Oct 26, 2017
- Intel Corporation
- Suman DATTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FORMING CONTACTS TO QUANTUM WELL TRANSISTORS
- Publication number 20170309735
- Publication date Oct 26, 2017
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICE
- Publication number 20170294529
- Publication date Oct 12, 2017
- Qorvo US, Inc.
- Edward A. Beam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Substrate with Stress Relief Regions
- Publication number 20170287709
- Publication date Oct 5, 2017
- Infineon Technologies Austria AG
- Simone Lavanga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT) CAPABLE OF PROTECTING III-...
- Publication number 20170271492
- Publication date Sep 21, 2017
- Taiwan Semiconductor Manufacturing company Ltd.
- HAN-CHIN CHIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE STRUCTURE, SEMICONDUCTOR COMPONENT AND METHOD
- Publication number 20170271454
- Publication date Sep 21, 2017
- Infineon Technologies Austria AG
- Gerhard Prechtl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Electron Mobility Transistor with Carrier Injection Mitigation...
- Publication number 20170200817
- Publication date Jul 13, 2017
- Infineon Technologies Austria AG
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-ETCH GAS COOLED EPITAXIAL STACK FOR GROUP IIIA-N DEVICES
- Publication number 20170186859
- Publication date Jun 29, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Asad Mahmood HAIDER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A HEMT TRANSISTOR AND HEMT TRANSISTOR WITH...
- Publication number 20170141218
- Publication date May 18, 2017
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED STRUCTURES AND METHODS FOR ASYMMETRIC GAN TRANSISTORS...
- Publication number 20170133497
- Publication date May 11, 2017
- Intel Corporation
- Sansaptak Dasgupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMATION OF VERTICAL CYLINDRICAL GaN QUANTUM WELL TRANS...
- Publication number 20170117398
- Publication date Apr 27, 2017
- ZING SEMICONDUCTOR CORPORATION
- DEYUAN XIAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE SEMICONDUCTORS WITH RECESS REGIONS AND METHODS OF MANUF...
- Publication number 20170092752
- Publication date Mar 30, 2017
- Cambridge Electronics, Inc.
- Bin Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION VIA IMPLANTATION OF LOW ATOMIC MASS SP...
- Publication number 20170069742
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF SPATIALLY IMPLANTING MULTIPLE SPECIES IN III-NITRIDE SEM...
- Publication number 20170069745
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- Kevin J. Linthicum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION VIA COUNTERDOPANT PROFILE MATCHING
- Publication number 20170069744
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARASITIC CHANNEL MITIGATION VIA BACK SIDE IMPLANTATION
- Publication number 20170069743
- Publication date Mar 9, 2017
- M/A-COM Technology Solutions Holdings, Inc.
- John Claassen Roberts
- H01 - BASIC ELECTRIC ELEMENTS

with delta or planar doped donor layer

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Field effect transistor

Method for manufacturing semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method thereof

High electron mobility transistor with graded back-barrier region

III-nitride epitaxial structure

Dual-operation depletion/enhancement mode high electron mobility tr...

Field effect transistor

Monolithic integration of group III nitride epitaxial layers

Compound semiconductor substrate and method of forming a compound s...

HEMT transistors with improved electron mobility

Methods of forming substrate structures and semiconductor components

High electron mobility transistor devices and method for fabricatin...

Semiconductor structure including high electron mobility transistor...

High-electron-mobility transistor (HEMT) structure capable of prote...

Semiconductor device and method for manufacturing the same

Semiconductor device and electrical device

High electron mobility transistor devices

Techniques for forming contacts to quantum well transistors

Extreme high mobility CMOS logic

Compound semiconductor device and method of manufacturing the compo...

High electron mobility transistor with indium nitride layer

Nitride semiconductor element and nitride semiconductor package

High electron mobility transistor with carrier injection mitigation...

Method for manufacturing a HEMT transistor and HEMT transistor with...

High electron mobility transistor

P-type diamond gate-GaN heterojunction FET structure

Semiconductor device

Monolithic integration of group III nitride epitaxial layers

High-electron-mobility transistor (HEMT) capable of protecting a II...

Patents Applicationslast 30 patents

FIELD EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

III-NITRIDE EPITAXIAL STRUCTURE

DUAL-OPERATION DEPLETION/ENHANCEMENT MODE HIGH ELECTRON MOBILITY TR...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE

METHOD FOR MANUFACTURING A HEMT TRANSISTOR AND HEMT TRANSISTOR WITH...

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

NITRIDE SEMICONDUCTOR ELEMENT AND NITRIDE SEMICONDUCTOR PACKAGE

High Electron Mobility Transistor with Graded Back-Barrier Region

METHOD FOR MANUFACTURING A HEMT TRANSISTOR AND HEMT TRANSISTOR WITH...

Methods of Forming Substrate Structures and Semiconductor Components

Compound Semiconductor Substrate and Method of Forming a Compound S...

EXTREME HIGH MOBILITY CMOS LOGIC

TECHNIQUES FOR FORMING CONTACTS TO QUANTUM WELL TRANSISTORS

HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICE

Semiconductor Substrate with Stress Relief Regions

HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT) CAPABLE OF PROTECTING III-...

SUBSTRATE STRUCTURE, SEMICONDUCTOR COMPONENT AND METHOD

High Electron Mobility Transistor with Carrier Injection Mitigation...

NON-ETCH GAS COOLED EPITAXIAL STACK FOR GROUP IIIA-N DEVICES

METHOD FOR MANUFACTURING A HEMT TRANSISTOR AND HEMT TRANSISTOR WITH...

SELF-ALIGNED STRUCTURES AND METHODS FOR ASYMMETRIC GAN TRANSISTORS...

METHOD FOR FORMATION OF VERTICAL CYLINDRICAL GaN QUANTUM WELL TRANS...

III-NITRIDE SEMICONDUCTORS WITH RECESS REGIONS AND METHODS OF MANUF...

PARASITIC CHANNEL MITIGATION VIA IMPLANTATION OF LOW ATOMIC MASS SP...

METHODS OF SPATIALLY IMPLANTING MULTIPLE SPECIES IN III-NITRIDE SEM...

PARASITIC CHANNEL MITIGATION VIA COUNTERDOPANT PROFILE MATCHING

PARASITIC CHANNEL MITIGATION VIA BACK SIDE IMPLANTATION