Claims
- 1. A method of producing a charge transfer device, comprising the steps of
- (a) forming a first electrode layer over a semiconductor substrate through an insulating layer;
- (b) forming a first film and a first resist layer on said first electrode layer, said first film and said first resist layer having the same pattern;
- (c) implanting a first impurity into said substrate through said first electrode layer and said insulating layer, with a high energy and using said first film and said first resist layer as a mask;
- (d) removing said first resist layer;
- (e) forming a second resist layer, said second resist layer extending from said first film at one end and to the center portion of gaps in said first film at the other end;
- (f) etching said first electrode layer to form first transfer electrodes using said first film and second resist layer as a mask, said etching process being conducted so that the selectivity of said first electrode layer with respect to said first film is substantially great;
- (g) removing said second resist layer;
- (h) forming a third resist layer, said third resist layer extending from one of said first transfer electrodes at one end and to the center portion of gaps in said transfer electrodes at the other end;
- (i) implanting a second impurity into said substrate through said insulating film, using said third resist layer and said first transfer electrodes as a mask;
- (j) removing said third resist layer; and
- (k) forming second transfer electrodes.
Parent Case Info
This is a divisional of copending application(s) Ser. No. 07/798,709 now U.S. Pat. No. 5,286,987, filed on Nov. 26, 1991.
US Referenced Citations (3)
Foreign Referenced Citations (4)
Number |
Date |
Country |
52-8782 |
Jan 1977 |
JPX |
52-75189 |
Jun 1977 |
JPX |
53-118379 |
Oct 1978 |
JPX |
55-93264 |
Jul 1980 |
JPX |
Non-Patent Literature Citations (1)
Entry |
C. Sequin, M. Tompsett, "Charge Transfer Devices", Supplement Eight, Advances in Electronics And Electron Physics, 1975, pp. 32-38. |
Divisions (1)
|
Number |
Date |
Country |
Parent |
798709 |
Nov 1991 |
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