Claims
- 1. A process for chemical vapor deposition comprising depositing a film using a metal β-diketonate complex and an α, β-unsaturated alcohol.
- 2. A process for chemical vapor deposition for forming a film on a substrate comprising contacting a metal β-diketonate complex and an α, β-unsaturated alcohol at the same time, at different times or alternately on the substrate.
- 3. A process for chemical vapor deposition according to any one of claims 1 and 2 wherein the α, β-unsaturated alcohol is a compound characterized as: where R1, R2, R3, R4 and R5 are chosen from the base groups X (halogens), H, alkyl bases and silicon type compounds, and each can be the same or different.
- 4. A process for chemical vapor deposition according to any one of claims 1 and 2 wherein the α, β-unsaturated alcohol is one or two types selected from the group consisting of: aryl alcohol, crotyl alcohol, cis-2-hexen-1-ol, trans-2-hexen-1-ol, 3-methyl-2-butene-1-ol, 1-butene-3-ol, 1-petene-3-ol, 1-hexen-3-ol, 3-hexen-2, 5-dial, 2-methyl-3-butene-2-ol, 2, 4-hexadiene-1-ol.
- 5. A process for chemical vapor deposition according to any one of claims 1 and 2 wherein the metal β-diketonate complex is a compound characterized as: where R6, R7, R8, R9 and R are chosen from the base groups X (halogens), H, alkyl bases and silicon type compounds, and each can be the same or different, n is an integer from 1-4 and m is an integer from 0-5 and M is a metal.
- 6. A process for chemical vapor deposition according to any one of claims 1 and 2 wherein β-diketone of the metal β-diketonate complex is selected from the group consisting of acetylacetone, dipivaloylmethane, hexafluoroacetylacetone, trifluoroacetylacetone.
- 7. A process for chemical vapor deposition according to any one of claims 1 and 2 wherein the film includes one of a metal film, a metal oxide film, a metal nitride film, a metal and a metal carbide film.
- 8. A process for chemical vapor deposition according to claim 5 wherein β-diketone of the metal β-diketonate complex is selected from the group consisting of acetylacetone, dipivaloylmethane, hexafluoroacetylacetone, trifluoroacetylacetone.
- 9. A process for chemical vapor deposition according to claim 3, wherein the film includes one of a metal film, a metal oxide film, a metal nitride film, a metal and a metal carbide film.
- 10. A process for chemical vapor deposition according to claim 4, wherein the film includes one of a metal film, a metal oxide film, a metal nitride film, a metal and a metal carbide film.
- 11. A process for chemical vapor deposition according to claim 5, wherein the film includes one of a metal film, a metal oxide film, a metal nitride film, a metal and a metal carbide film.
- 12. A process for chemical vapor deposition according to claim 6, wherein the film includes one of a metal film, a metal oxide film, a metal nitride film, a metal and a metal carbide film.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2000-265521 |
Sep 2000 |
JP |
|
Parent Case Info
This application is a Division of application Ser. No. 09/943,459, filed on Aug. 31, 2001, now abandoned.
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