CHIP AND ELECTRONIC DEVICE

Abstract

A chip and an electronic device are disclosed. The chip includes a main functional area, a protection area, and a transition area located between the main functional area and the protection area. The chip includes a field oxide, a metal layer, and a passivation layer that are sequentially stacked on a semiconductor substrate. In the transition area, the field oxide includes a primary field oxide and at least one secondary field oxide that are disposed at intervals, the secondary field oxide is located on a side of the primary field oxide facing the main functional area, the metal layer extends from the main functional area to a side of the primary field oxide facing away from the semiconductor substrate. The passivation layer extends from a side of the metal layer facing away from the semiconductor substrate to a side of the metal layer facing away from the main functional area.

Description

Claims

1. A chip, divided into a main functional area, a transition area, and a protection area, wherein the transition area is located between the main functional area and the protection area; the chip comprises a field oxide, a metal layer, and a passivation layer that are sequentially stacked on a semiconductor substrate, wherein the field oxide and the passivation layer are located in the transition area and the protection area, and the metal layer is located in the main functional area and the transition area; andin the transition area, the field oxide comprises a primary field oxide and at least one secondary field oxide that are disposed at intervals, wherein the secondary field oxide is located on a side of the primary field oxide facing the main functional area, the metal layer extends from the main functional area to a side of the primary field oxide facing away from the semiconductor substrate, and the passivation layer extends from a side of the metal layer facing away from the semiconductor substrate to a side of the metal layer facing away from the main functional area.

2. The chip according to claim 1, wherein in the transition area, the passivation layer further extends from the side of the metal layer facing away from the main functional area to a side of the primary field oxide facing away from the main functional area; and the metal layer covers a part of a surface on the side of the primary field oxide facing away from the semiconductor substrate, and the passivation layer extends from the side of the metal layer facing away from the semiconductor substrate through the side of the primary field oxide facing away from the semiconductor substrate to the side of the primary field oxide facing away from the main functional area.

3. The chip according to claim 1, wherein there are a plurality of secondary field oxides, and the plurality of secondary field oxides are disposed at intervals.

4. The chip according to claim 3, wherein there are three secondary field oxides, and along a direction from the main functional area to the protection area, a length range of each secondary field oxide is [0.2 µm, 100 µm], and a spacing range between adjacent secondary field oxides is [0.2 µm, 100 µm].

5. The chip according to claim 1, wherein the metal layer comprises a first part and a second part, the first part is located in at least the main functional area, and the second part is located in the transition area; and along a direction from the metal layer to the semiconductor substrate, thickness of the first part is greater than thickness of the second part.

6. The chip according to claim 5, wherein the first part extends from the main functional area to the transition area.

7. The chip according to claim 5, wherein the metal layer comprises a first metal layer and a second metal layer, the first metal layer is located between the semiconductor substrate and the second metal layer, and thickness of the first metal layer is the same as the thickness of the second part; and the first metal layer is located in the main functional area and the transition area, and the second metal layer is located in at least the main functional area.

8. The chip according to claim 5, wherein a thickness range of the first part is [1 µm, 7 µm], and a thickness range of the second part is [0.1 µm, 4 µm].

9. The chip according to claim 1, wherein the chip further comprises an metal layer located in the protection area; and in the protection area, the metal layer extends from the side of the primary field oxide facing away from the semiconductor substrate to a side of a primary field oxide that is adjacent to the primary field oxide and that faces away from the semiconductor substrate, and the passivation layer extends from a side of the metal layer facing away from the semiconductor substrate to a side of an metal layer that is adjacent to the metal layer and that faces away from the semiconductor substrate.

10. The chip according to claim 9, wherein when the metal layer comprises the first metal layer and the second metal layer, a field plate and the first metal layer are at a same layer and of a same material; and the metal layer and the metal layer are at a same layer and of a same material.

11. The chip according to claim 1, wherein a surface on the side of the metal layer facing away from the main functional area is a slant surface; and along the direction from the metal layer to the semiconductor substrate, the distance between the slant surface and the main functional area gradually increases.

12. The chip according to claim 1, further comprising a main junction, wherein the main junction extends from the main functional area to the transition area and is in contact with the at least one secondary field oxide and the primary field oxide.

13. An electronic device, comprising a circuit card and the chip according to claim 1, wherein the chip is disposed on the circuit card.