Field plates

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H01L29/402

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

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H01L29/402Field plates

Industries

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Patents Grantslast 30 patents

Information Patent Grant
High-voltage transistor and method for fabricating the same
- Patent number 12,205,995
- Issue date Jan 21, 2025
- United Microelectronics Corp.
- Ling-Gang Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective single diffusion/electrical barrier
- Patent number 12,199,152
- Issue date Jan 14, 2025
- Samsung Electronics Co., Ltd.
- Byounghak Hong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with an insulating region formed between a con...
- Patent number 12,191,383
- Issue date Jan 7, 2025
- NXP USA, INC.
- Bruce Mcrae Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor device
- Patent number 12,176,403
- Issue date Dec 24, 2024
- United Microelectronics Corp.
- Chi-Hsiao Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon on insulator semiconductor device with mixed doped regions
- Patent number 12,166,130
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jack Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained transistor with conductive plate
- Patent number 12,166,108
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chan-Yu Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 12,159,908
- Issue date Dec 3, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Chao Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Connection arrangements for integrated lateral diffusion field effe...
- Patent number 12,159,815
- Issue date Dec 3, 2024
- Silanna Pte Ltd
- Shanghui Larry Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,159,934
- Issue date Dec 3, 2024
- Renesas Electronics Corporation
- Katsumi Eikyu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,154,981
- Issue date Nov 26, 2024
- United Microelectronics Corp.
- Po-Yu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 12,154,984
- Issue date Nov 26, 2024
- DB HiTek, Co., Ltd.
- Jun Hee Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride transistor
- Patent number 12,154,982
- Issue date Nov 26, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Gökhan Atmaca
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical string driver with channel field management structure
- Patent number 12,148,802
- Issue date Nov 19, 2024
- INTEL NDTM US LLC
- Dong Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,148,803
- Issue date Nov 19, 2024
- Kabushiki Kaisha Toshiba
- Satoshi Akutsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double-channel HEMT device and manufacturing method thereof
- Patent number 12,148,823
- Issue date Nov 19, 2024
- STMicroelectronics S.r.l.
- Ferdinando Iucolano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride (GAN) three-dimensional integrated circuit technology
- Patent number 12,148,747
- Issue date Nov 19, 2024
- Intel Corporation
- Han Wui Then
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,142,677
- Issue date Nov 12, 2024
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Yusuke Kanda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor with implant alignment spacers
- Patent number 12,132,099
- Issue date Oct 29, 2024
- NXP USA, INC.
- Hernan Rueda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor and resistor-transistor-logic circuit with GaN structure a...
- Patent number 12,132,043
- Issue date Oct 29, 2024
- United Microelectronics Corp.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual gate structures for semiconductor devices
- Patent number 12,132,108
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Chih Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage diode on SOI substrate with trench-modified current path
- Patent number 12,125,923
- Issue date Oct 22, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Jaroslav Pjencak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having vertically parallel p-n layers fo...
- Patent number 12,119,376
- Issue date Oct 15, 2024
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having conductive field plate overlapping an e...
- Patent number 12,119,384
- Issue date Oct 15, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Po-Yu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode with tunable blocking voltage
- Patent number 12,119,413
- Issue date Oct 15, 2024
- ALLEGRO MICROSYSTEMS, LLC
- Yu-Chun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistor and resistor-transistor-logic circuit with GaN structure a...
- Patent number 12,119,342
- Issue date Oct 15, 2024
- United Microelectronics Corp.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system of junction termination extension in high voltage...
- Patent number 12,113,101
- Issue date Oct 8, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Subhash Srinivas Pidaparthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 12,107,120
- Issue date Oct 1, 2024
- Hyundai Mobis Co., Ltd.
- Tae Youp Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment using adaptively biased shield plate
- Patent number 12,100,740
- Issue date Sep 24, 2024
- Silanna Asia Pte Ltd
- Stuart B. Molin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having a field plate
- Patent number 12,094,969
- Issue date Sep 17, 2024
- Infineon Technologies Austria AG
- Stefan Tegen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride device and method of fabricating a Group III nitr...
- Patent number 12,087,830
- Issue date Sep 10, 2024
- Infineon Technologies AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURI...
- Publication number 20250022947
- Publication date Jan 16, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250015146
- Publication date Jan 9, 2025
- RENESAS ELECTRONICS CORPORATION
- Yotaro GOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FOR POWER AMPLIFICATION
- Publication number 20250015149
- Publication date Jan 9, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko KAWASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FOR POWER AMPLIFICATION
- Publication number 20250015150
- Publication date Jan 9, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Katsuhiko KAWASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250015151
- Publication date Jan 9, 2025
- ROHM CO., LTD.
- Masaki NAGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20250015152
- Publication date Jan 9, 2025
- ROHM CO., LTD.
- Manabu YANAGIHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE
- Publication number 20250015180
- Publication date Jan 9, 2025
- Powerchip Semiconductor Manufacturing Corporation
- Jih-Chien Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER AMPLIFIER SEMICONDUCTOR DEVICE
- Publication number 20250015768
- Publication date Jan 9, 2025
- NUVOTON TECHNOLOGY CORPORATION JAPAN
- Akihiko NISHIO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20250015136
- Publication date Jan 9, 2025
- ROHM CO., LTD.
- Ryoichi MAKINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-OXIDE SEMICONDUCTOR TRANSISTORS
- Publication number 20250015181
- Publication date Jan 9, 2025
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- BONG WOONG MUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH DIELECTRIC SPACERS AND METHODS OF FABRICATION THEREOF
- Publication number 20250006818
- Publication date Jan 2, 2025
- NXP USA, Inc.
- Congyong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM OF JUNCTION TERMINATION EXTENSION IN HIGH VOLTAGE...
- Publication number 20250006784
- Publication date Jan 2, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Subhash Srinivas PIDAPARTHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250006809
- Publication date Jan 2, 2025
- SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
- Hiroaki MARUYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH RECESSED FIELD PLATES AND METHODS OF FABRICATION T...
- Publication number 20250006802
- Publication date Jan 2, 2025
- NXP USA, Inc.
- Congyong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING A BIPOLAR JUNCTION TRANSISTOR
- Publication number 20250006823
- Publication date Jan 2, 2025
- INFINEON TECHNOLOGIES AG
- Josef Schweda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...
- Publication number 20240429228
- Publication date Dec 26, 2024
- UNITED MICROELECTRONICS CORP.
- Kuo-Hsing Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride Doherty Amplifier Using Different Epitaxial Struc...
- Publication number 20240429870
- Publication date Dec 26, 2024
- MACOM Technology Solutions Holdings, Inc.
- Matthew Mellor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Topside Cooling for Semiconductor Device
- Publication number 20240429120
- Publication date Dec 26, 2024
- Wolfspeed, Inc.
- Michael Lee Schuette
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Implantation for Isolated Channel Structures in Group III-Nitride S...
- Publication number 20240429314
- Publication date Dec 26, 2024
- Wolfspeed, Inc.
- Kyle Bothe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN SEMICONDUCTOR POWER TRANSISTOR WITH SLANTED GATE FIELD PLATE AN...
- Publication number 20240421196
- Publication date Dec 19, 2024
- GaN Systems Inc.
- Abhinandan DIXIT
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE
- Publication number 20240421049
- Publication date Dec 19, 2024
- ROHM CO., LTD.
- Takeshi OKAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE DEVICE WITH ARTIFICIAL FIELD PLATES
- Publication number 20240421194
- Publication date Dec 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yi-An LAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240421197
- Publication date Dec 19, 2024
- Fuji Electric Co., Ltd.
- Takahide TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20240421195
- Publication date Dec 19, 2024
- ROHM CO., LTD.
- Shinya TAKADO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20240421198
- Publication date Dec 19, 2024
- Rohm Co., Ltd.
- Kunihiko Iwamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF
- Publication number 20240421218
- Publication date Dec 19, 2024
- Lucid Microsystems PTE LTD.
- Zihao Mike GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE DEVICE
- Publication number 20240413212
- Publication date Dec 12, 2024
- INFINEON TECHNOLOGIES AG
- Albert Birner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Peak Reduction in Semiconductor Devices with Metal Corner Rou...
- Publication number 20240413218
- Publication date Dec 12, 2024
- Wolfspeed, Inc.
- Olof Tornblad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Compensation Structure
- Publication number 20240413198
- Publication date Dec 12, 2024
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HEMT DEVICE HAVING AN IMPROVED CONDUCTIVITY AND MANUFACTURING PROCE...
- Publication number 20240405115
- Publication date Dec 5, 2024
- STMicroelectronics International N.V.
- Maria Eloisa CASTAGNA
- H01 - BASIC ELECTRIC ELEMENTS

Field plates

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

High-voltage transistor and method for fabricating the same

Selective single diffusion/electrical barrier

Semiconductor device with an insulating region formed between a con...

High electron mobility transistor device

Silicon on insulator semiconductor device with mixed doped regions

Strained transistor with conductive plate

Semiconductor device and fabrication method thereof

Connection arrangements for integrated lateral diffusion field effe...

Semiconductor device

Semiconductor device

Semiconductor device and method for manufacturing same

Gallium nitride transistor

Vertical string driver with channel field management structure

Semiconductor device

Double-channel HEMT device and manufacturing method thereof

Gallium nitride (GAN) three-dimensional integrated circuit technology

Semiconductor device

LDMOS transistor with implant alignment spacers

Resistor and resistor-transistor-logic circuit with GaN structure a...

Dual gate structures for semiconductor devices

High voltage diode on SOI substrate with trench-modified current path

Power semiconductor device having vertically parallel p-n layers fo...

Semiconductor device having conductive field plate overlapping an e...

Schottky diode with tunable blocking voltage

Resistor and resistor-transistor-logic circuit with GaN structure a...

Method and system of junction termination extension in high voltage...

Power semiconductor device

Threshold voltage adjustment using adaptively biased shield plate

Transistor device having a field plate

Group III nitride device and method of fabricating a Group III nitr...

Patents Applicationslast 30 patents

HEMT TRANSISTOR WITH ADJUSTED GATE-SOURCE DISTANCE, AND MANUFACTURI...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE FOR POWER AMPLIFICATION

SEMICONDUCTOR DEVICE FOR POWER AMPLIFICATION

SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE

TRANSISTOR STRUCTURE

POWER AMPLIFIER SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE

METAL-OXIDE SEMICONDUCTOR TRANSISTORS

TRANSISTORS WITH DIELECTRIC SPACERS AND METHODS OF FABRICATION THEREOF

METHOD AND SYSTEM OF JUNCTION TERMINATION EXTENSION IN HIGH VOLTAGE...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

TRANSISTORS WITH RECESSED FIELD PLATES AND METHODS OF FABRICATION T...

SEMICONDUCTOR DEVICE INCLUDING A BIPOLAR JUNCTION TRANSISTOR

RESISTOR AND RESISTOR-TRANSISTOR-LOGIC CIRCUIT WITH GAN STRUCTURE A...

Group III Nitride Doherty Amplifier Using Different Epitaxial Struc...

Topside Cooling for Semiconductor Device

Implantation for Isolated Channel Structures in Group III-Nitride S...

GaN SEMICONDUCTOR POWER TRANSISTOR WITH SLANTED GATE FIELD PLATE AN...

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE

GALLIUM NITRIDE DEVICE WITH ARTIFICIAL FIELD PLATES

SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

HIGH ELECTRON MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF

GROUP III NITRIDE DEVICE

Field Peak Reduction in Semiconductor Devices with Metal Corner Rou...

Semiconductor Device with Compensation Structure

HEMT DEVICE HAVING AN IMPROVED CONDUCTIVITY AND MANUFACTURING PROCE...