1. Field of the Invention
The present invention relates to a chip resistor and a method for making the same, and particularly to a chip resistor having barrier layers and a method for making the same.
2. Description of the Related Art
The substrate 11 is made of an insulating material, an approximately rectangular plate, and has a back face 111, a pair of side faces 112, and a main face 113. The side faces 112 respectively extend upwards from two opposite sides of the back face 111. The main face 113 corresponds to the back face 111. The main upper electrodes 12 are conductively disposed on the main face 113 of the substrate 11, and are separate from each other. Each main upper electrode 12 has an inner side face 121, an outer side face 122, and an inner end portion 123. The outer side face 122 of the main upper electrode 12 is aligned with the side face 112 of the substrate 11.
The bottom electrodes 13 are conductively disposed on the back face 111 of the substrate 11, and are separate from each other. Each bottom electrode 13 has an outer side face 132. The outer side face 132 of the bottom electrode 13 is aligned with the side face 112 of the substrate 11, such that the main upper electrodes 12 and the bottom electrodes 13 are symmetrical to each other.
The resistive film 14 has a predetermined resistance and is disposed on the main face 113 of the substrate 11, and is disposed in a region between the inner side faces 121 of the main upper electrodes 12. The resistive film 14 extends over the main upper electrodes 12, such that two end portions of the resistive film 14 overlap with the inner end portions 123 of the main upper electrodes 12. The first protective coat 15 is made of a cuttable insulating material, and covers the resistive film 14, such that the resistive film 14 is isolated from the outside environment. The second protective coat 16 is made of an insulating material, and covers the first protective coat 15 and part of the main upper electrodes 12, such that the resistive film 14 and the first protective coat 15 are isolated from the outside environment.
The side electrodes 17 are made of a conductive material. Each side electrode 17 is formed on the side face 112 of the substrate 11, the outer side face 122 of the main upper electrode 12, and the outer side face 132 of the bottom electrode 13, for electrically connecting the main upper electrode 12 and the bottom electrode 13. The first plated layers 18 are nickel layers, and each first plated layer 18 covers the main upper electrode 12, the bottom electrode 13, and the side electrode 17. The second plated layers 19 are tin layers, and each second plated layer 19 covers the first plated layer 18. The second plated layers 19 and the first plated layers 18 are formed by electroplating.
The disadvantage of the conventional chip resistor 1 is described as follows. In an environment with high sour gas and high corrosive gas, the corrosion gas easily penetrates the chip resistor 1 through the interfaces between the second protective coat 16 and the first plated layer 18 and between the second protective coat 16 and the second plated layer 19, and chemically reacts with silver or copper in the main upper electrode 12 to generate silver sulfide or copper sulfide, thus changing the resistance value. More seriously, an open-circuit may be formed, which will paralyze the system where the chip resistor 1 is located.
Therefore, it is necessary to create a chip resistor that solves the above problem and a method of making the same.
The present invention provides a method for making the chip resistor, comprising the following steps: (a) providing a substrate having a back face, two side faces, and a main face; (b) forming a pair of bottom electrodes on the back face of the substrate, wherein the bottom electrodes are separate from each other, and each bottom electrode has an outer side face; (c) forming a resistive film on a middle region of the main face of the substrate; (d) forming a pair of main upper electrodes on the main face of the substrate, wherein the main upper electrodes are separate from each other, and each main upper electrode has an outer side face; (e) forming a first protective coat over the resistive film, wherein the first protective coat covers part of the main upper electrodes; (f) forming two barrier layers on the main upper electrodes, wherein the barrier layers cover part of the first protective coat; (g) forming a second protective coat on the first protective coat, wherein the second protective coat covers part of the barrier layers; (h) forming a pair of side electrodes, wherein each side electrode is disposed on the side face of the substrate, the outer side face of the main upper electrode, an outer side face of the barrier layer, and the outer side face of the bottom electrode, for being electrically connected to the main upper electrode, the barrier layer, and the bottom electrode; and (i) forming at least one plated layer, for covering the barrier layers, the bottom electrodes, and the side electrode, thereby forming a chip resistor.
The present invention further provides a chip resistor that comprises a substrate, a pair of bottom electrodes, a resistive film, a pair of main upper electrodes, a first protective coat, a pair of barrier layers, a second protective coat, a pair of side electrodes, and at least one plated layer. The substrate has a back face, two side faces, and a main face. The bottom electrodes are disposed on the back face of the substrate and separate from each other. Each bottom electrode has an outer side face. The resistive film is disposed on the main face of the substrate. The main upper electrodes are disposed on the main face of the substrate and separate from each other. Each main upper electrode has an outer side face. The first protective coat is disposed over the resistive film, and covers a part of the main upper electrodes. The barrier layers are disposed on the main upper electrodes, and cover part of the first protective coat. The second protective coat is disposed on the first protective coat, and covers part of the barrier layers. Each side electrode is disposed on the side face of the substrate, the outer side face of the main upper electrode, an outer side face of the barrier layer, and the outer side face of the bottom electrode, for electrically connecting the main upper electrode, the barrier layer, and the bottom electrode. The plated layer(s) cover(s) the barrier layers, the bottom electrodes, and the side electrodes.
The barrier layers have the capabilities of anti-sulfuration and anti-corrosion, which can effectively protect the main upper electrodes from sour gas or other corrosive gases, thus overcoming the disadvantages of the conventional art that the chip resistor is easily affected by the outside environment, resulting in changed resistance value, or even an open-circuit and paralyzed system. In addition, in the manufacturing process of the present invention, the first protective coat is formed before the barrier layers are formed, then, the second protective coat is formed, and finally the plated layers are formed. Therefore, the corrosive gas in the environment cannot directly penetrate the main upper electrodes through the interface between the second protective coat and the plated layer.
a to 3k are schematic cross-sectional views of each step of the method for making the chip resistor according to the first embodiment of the present invention; and
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In Step S211, a second plated layer 29 is formed to cover the first plated layer 28, as shown in
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The substrate 21 has a back face 211, two side faces 212, and a main face 213. The bottom electrodes 23 are disposed on the back face 211 of the substrate 21 and are separate from each other, and each bottom electrode 23 has an outer side face 232. The resistive film 24 is disposed on the middle region of the main face 213 of the substrate 21, and the resistive film 24 has two end portions 241. In this embodiment, the material of the resistive film 24 can be, for example, ruthenium, copper, silver, palladium, or conductive printing ink.
The main upper electrodes 22 are disposed on the main face 213 of the substrate 21 and separate from each other. Each main upper electrode 22 has an inner end portion 221 and an outer side face 223. In this embodiment, the main upper electrode 22 extends onto the resistive film 24, such that the inner end portion 221 of the main upper electrode 22 overlaps with the end portion 241 of the resistive film 24.
The inner protective coat 25 is disposed on the resistive film 24, and covers part of the main upper electrodes 22; that is, the inner protective coat 25 comes into contact with the main upper electrodes 22. In this embodiment, the material of the inner protective coat 25 is glass.
The first protective coat 26 is disposed over the resistive film 24, and covers part of the main upper electrodes 22; that is, the first protective coat 26 comes into contact with the main upper electrodes 22. The thick film chip resistor shown in this embodiment is further provided with the inner protective coat 25, and thus the first protective coat 26 covers the inner protective coat 25.
The barrier layers 30 are disposed on the main upper electrodes 22, and cover part of the first protective coat 26. Each barrier layer 30 has an outer side face 302. Preferably, each barrier layer 30 totally covers the wide edge of each main upper electrode 22, such that the barrier layers 30 come into contact with the main face 213 of the substrate 21. The barrier layers 30 come into contact with the first protective coat 26, and cover or overlap with the two ends of the first protective coat 26. The barrier layers 30 may be made of conductive material, which is preferably selected from a group consisting of nickel, palladium, platinum, gold, nickel-chromium, nickel-boron, nickel-phosphor and a combination thereof. In this embodiment, the barrier layers 30 are formed by electroplating, and the material thereof is nickel.
The second protective coat 31 is disposed on the first protective coat 26, and covers part of the barrier layers 30. That is, the second protective coat 31 comes into contact with the barrier layers 30, but not the main upper electrodes 22. The material of the second protective coat 31 may be the same as or different from the material of the first protective coat 26. If the materials are the same, the interface between the second protective coat 31 and the first protective coat 26 is not distinct, and there appears to be only one layer.
Each side electrode 27 is disposed on the side face 212 of the substrate 21, the outer side face 223 of the main upper electrode 22, the outer side face 232 of the bottom electrode 23, and the outer side face 302 of the barrier layer 30, for electrically connecting the main upper electrode 22, the barrier layer 30, and the bottom electrode 23.
The plated layer(s) cover(s) the barrier layers 30, the bottom electrodes 23, and the side electrodes 27. In other applications, if the area of each barrier layer 30 is smaller than that of each main upper electrode 22, the plated layer further covers the main upper electrodes 22. In this embodiment, the plated layer(s) include(s) a first plated layer 28 and a second plated layer 29. The first plated layer 28 covers the barrier layers 30, the bottom electrode 23, and the side electrode 27. In other applications, if the barrier layers 30 do not totally cover the upper surface of each main upper electrode 22 (that is, the width of the barrier layer 30 is smaller than the width of the main upper electrode 22), part of the main upper electrodes 22 will be exposed, and meanwhile, the first plated layer 28 will cover the exposed main upper electrodes 22. In this embodiment, the material of the first plated layer 28 is nickel, which is the same as the material of the barrier layers 30, such that the interface between the first plated layers 28 and the barrier layers 30 is not distinct, and there appears to be only one layer. The second plated layer 29 covers the first plated layer 28. In this embodiment, the material of the second plated layer 29 is tin.
The advantage of the present invention is that the barrier layers 30 having anti-sulfuration and anti-corrosion capabilities are added, which effectively protect the main upper electrodes 22 from being affected by sour gas or other corrosive gases, so as to overcome the disadvantage in the conventional art that the chip resistor 1 is easily affected by the outside environment, resulting in the changed resistance value, or even an open-circuit and paralyzed system. In addition, during the manufacturing process of the present invention, the first protective coat 26 is formed before the barrier layers 30 are formed, then, the second protective coat 31 is formed, and finally the plated layers (the first plated layer 28 and the second plated layer 29) are formed. Therefore, the corrosive gas in the environment cannot directly penetrate the main upper electrodes 22 through the interface between the second protective coat 31 and the first plated layer 28 and between the second protective coat 31 and the second plated layer 29.
While several embodiments of the present invention have been illustrated and described, various modifications and improvements can be made by those skilled in the art. The embodiments of the present invention are therefore described in an illustrative but not restrictive sense. It is intended that the present invention should not be limited to the particular forms as illustrated, and that all modifications which maintain the spirit and scope of the present invention are within the scope defined in the appended claims.
Number | Date | Country | Kind |
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098103896 | Feb 2009 | TW | national |