Claims
- 1. A clean aluminum alloy for use in the fabrication of semiconductor apparatus where at least a portion of the clean aluminum alloy surface is protected by an anodized coating, said clean aluminum alloy comprising impurity particulates such that at least 85% said impurity particulates are less than 5 μm in size, less than 15% of said impurity particulates range in size from 5 μm to 20 μm in size, and less than about 1% of said impurity particulates are larger than 20 μm in size, with no impurity particulates being larger than 40 μm, wherein iron is present at a concentration ranging from about 0.001% to about 0.2% by weight, silicon is present at a concentration ranging from about 0.4% to about 0.8% by weight, and copper is present at a concentration ranging from about 0.15% to about 0.30% by weight.
- 2. A clean aluminum alloy in accordance with claim 1, wherein said impurity particulates are formed from impurities selected from the group consisting of magnesium, silicon, iron, copper, manganese, zinc, chromium, titanium, and compounds thereof.
- 3. A clean aluminum alloy in accordance with claim 2, wherein iron is present at an atomic concentration of less than about 0.1 weight % and copper is present at an atomic concentration of less than about 0.25 weight %.
- 4. A clean aluminum alloy in accordance with claim 2, wherein said impurities include the following present at an atomic weight % as specified or lower, silicon at 0.8 weight %; iron at 0.2 weight %; copper at 0.3 weight %; and magnesium at 1.2 weight %.
- 5. A clean aluminum alloy in accordance with claim 2, wherein said impurities include the following present at an atomic weight % as specified: silicon ranging from about 0.4% to about 0.8%; iron ranging from about 0.001% to about 0.2 weight %; copper ranging from about 0.15% to about 0.3%; manganese ranging from about 0.001% to about 0.14%; zinc ranging from about 0.001% to about 0.15%; chromium ranging from about 0.04% to about 0.28%; titanium ranging from about 0.001% to about 0.06%, and magnesium ranging from about 0.8% to about 1.2%, and wherein a total of other impurities present in said aluminum alloy ranges is 0.15 weight % or less, with individual other impurities limited to a maximum of 0.05 weight % each.
- 6. A clean aluminum alloy in accordance with claim 5, wherein said copper is present at a concentration ranging between about 0.15 weight % and about 0.25 weight%.
- 7. A clean aluminum alloy in accordance with claim 5, wherein said iron is present at a concentration less than about 0.1 weight %.
- 8. A clean aluminum alloy in accordance with claim 6, wherein said iron is present at a concentration less than about 0.1 weight %.
- 9. A method of producing a corrosion-resistant article for use in semiconductor processing, wherein said article comprises a body formed from a clean aluminum alloy, and wherein at least one surface of said body, which is to be exposed to a corrosive environment, is covered with an anodized layer, wherein at least said surface of said body which is covered with said anodized layer is an aluminum alloy having impurity particulates controlled within limits so that at least 85% of all impurity particulates are less than about 5 μm in size, less than 15% of said impurity particulates range from 5 μm to 20 μm in size, less than about 1% of said impurity particulates are be larger than 20 μm in size, and no impurity particulates are larger than 40 μm in size, and wherein iron is present at a concentration ranging from about 0.001% to about 0.2% by weight, silicon is present at a concentration ranging from about 0.4% to about 0.8% by weight, and copper is present at a concentration ranging from about 0.15% to about 0.30% by weight.
- 10. A method in accordance with claim 9, wherein said impurity particulates comprise impurities selected from the group consisting of magnesium, silicon, iron, copper, manganese, zinc, chromium, titanium, and compounds thereof.
- 11. A method in accordance with claim 9, wherein iron is present at an atomic concentration of less than about 0.1 weight % and copper is present at an atomic concentration of less than about 0.25 weight %.
- 12. A method in accordance with claim 10, wherein iron is present at an atomic concentration of less than about 0.1 weight % ad copper is present at an atomic concentration of less than about 0.25 weight %.
- 13. A method in accordance with claim 10, wherein said impurities include the following present at an atomic weight % as specified or lower, silicon at 0.8 weight %; iron at 0.2 weight %; copper at 0.3 weight %; and magnesium at 1.2 weight %.
- 14. A method in accordance with claim 10, wherein said impurities are present at the following concentrations: silicon ranging from about 0.4% to about 0.8%; iron ranging from about 0.001% to about 0.2 weight %; copper ranging from about 0.15% to about 0.3%; manganese ranging from about 0.001% to about 0.14%; zinc ranging from about 0.001% to about 0.15%; chromium ranging from about 0.04% to about 0.28%; titanium ranging from about 0.001% to about 0.06%, and magnesium ranging from about 0.8% to about 1.2%, and wherein a total of other impurities present in said aluminum alloy ranges is 0.15 weight % or less, with individual other impurities limited to a maximum of 0.05 weight % each.
- 15. A method in accordance with claim 14, wherein said copper is present at a concentration ranging between about 0.15 weight % and about 0.25 weight %.
- 16. The method in accordance with claim 14, wherein said iron is present at a concentration less than about 0.1 weight %.
- 17. The method in accordance with claim 15, wherein said iron is present at a concentration less than about 0.1 weight %.
- 18. A clean aluminum alloy for use in the fabrication of semiconductor apparatus, where at least a portion of the clean aluminum alloy surface is protected by a native oxide having a thickness ranging from about 30 Å to about 50 Å, said clean aluminum alloy comprising impurity particulates such that at least 85% said impurity particulates are less than 5 μm in size, less than 15% of said impurity particulates range in size from 5 μm to 20 μm in size, and less than about 1% of said impurity particulates are larger than 20 μm in size, with no impurity particulates being larger than 40 μm.
- 19. A clean aluminum alloy in accordance with claim 18, wherein said impurity particulates are formed from impurities selected from the group consisting of magnesium, silicon, iron, copper, manganese, zinc, chromium, titanium, and compounds thereof.
- 20. A clean aluminum alloy in accordance with claim 19, wherein iron is present at atomic concentration ranging from about 0.001% by weight to about 0.2% by weight, and copper is present at an atomic concentration ranging from about 0.15% by weight to about 0.3% by weight.
- 21. A clean aluminum alloy in accordance with claim 20, wherein iron is present at an atomic concentration of less than about 0.1 weight % and copper is present at an atomic concentration of less than about 0.25 weight %.
- 22. A clean aluminum alloy in accordance with claim 19, wherein said impurities include the following present at an atomic weight % as specified silicon ranging from about 0.4% to about 0.8%; iron ranging from about 0.001% to about 0.2%; copper ranging from about 0.15% to about 0.3%; and magnesium ranging from about 0.8% to about 1.2%.
- 23. A clean aluminum alloy in accordance with claim 22 wherein said impurities include the following present at an atomic weight % as specified, silicon ranging from about 0.4% to about 0.8%; iron ranging from about 0.001% to about 0.2 weight %; copper ranging from about 0.15% to about 0.3%; manganese ranging from about 0.001% to about 0.14%; zinc ranging from about 0.001% to about 0.15%; chromium ranging from about 0.04% to about 0.28%; titanium ranging from about 0.001% to about 0.06%, and magnesium ranging from about 0.8% to about 1.2%, and wherein a total of other impurities present in said aluminum alloy ranges is 0.15 weight % or less, with individual other impurities limited to a maximum of 0.05 weight % each.
- 24. A clean aluminum alloy in accordance with claim 23, wherein said copper is present at a concentration ranging between about 0.15 weight % and about 0.25 weight%.
- 25. A clean aluminum alloy in accordance with claim 23, wherein said iron is present at a concentration less than about 0.1 weight %.
- 26. A method of producing a corrosion-resistant article for use in semiconductor processing, wherein said article comprises a body formed from a clean aluminum alloy, and wherein at least one surface of said body, which is to be exposed to a corrosive environment, is covered with a native oxide layer having a thickness ranging from about 30 Å to about 50 Å, and wherein at least said surface of said body which is covered with said native oxide layer is an aluminum alloy having impurity particulates controlled within limits so that at least 85% of all impurity particulates are less than about 5 μm in size, less than 15% of said impurity particulates range from 5 μm to 20 μm in size, less than about 1% of said impurity particulates are be larger than 20 μm in size, and no impurity particulates are larger than 40 μm in size.
- 27. A method in accordance with claim 26, wherein said impurity particulates comprise impurities selected from the group consisting of magnesium, silicon, iron, copper, manganese, zinc, chromium, titanium, and compounds thereof.
- 28. A method in accordance with claim 27, wherein iron is present at atomic concentration ranging from about 0.001% by weight to about 0.2% by weight, and copper is present at an atomic concentration ranging from about 0.15% by weight to about 0.3% by weight.
- 29. A method in accordance with claim 28, wherein iron is present at an atomic concentration of less than about 0.1 weight % and copper is present at an atomic concentration of less than about 0.25 weight %.
- 30. A method in accordance with claim 27, wherein said impurities include the following present at an atomic weight % as specified, silicon ranging from about 0.4% to about 0.8%; iron ranging from about 0.001% to about 0.2%; copper ranging from about 0.15% to about 0.3%; and magnesium ranging from about 0.8% to about 1.2%.
- 31. A method in accordance with claim 30, wherein said impurities are present at the following concentrations: silicon ranging from about 0.4% to about 0.8%; iron ranging from about 0.001% to about 0.2 weight %; copper ranging from about 0.15% to about 0.3%; manganese ranging from about 0.001% to about 0.14%; zinc ranging from about 0.001% to about 0.15%; chromium ranging from about 0.04% to about 0.28%; titanium ranging from about 0.001% to about 0.06%, and magnesium ranging from about 0.8% to about 1.2%, and wherein a total of other impurities present in said aluminum alloy ranges is 0.15 weight % or less, with individual other impurities limited to a maximum of 0.05 weight % each.
- 32. A method in accordance with claim 31, wherein said copper is present at a concentration ranging between about 0.15 weight % and about 0.25 weight %.
- 33. A method in accordance with claim 31, wherein said iron is present at a concentration less than about 0.1 weight %.
Parent Case Info
This application is a continuation-in-part application of application Ser. No. 10/161,192, which was filed on May 28, 2002 and which is now U.S. Pat. No. 6,565,984.
US Referenced Citations (5)
Number |
Name |
Date |
Kind |
5039388 |
Miyashita et al. |
Aug 1991 |
A |
5756222 |
Bercaw et al. |
May 1998 |
A |
5811195 |
Bercaw et al. |
Sep 1998 |
A |
6242111 |
Telford et al. |
Jun 2001 |
B1 |
20010019777 |
Tanaka et al. |
Sep 2001 |
A1 |
Non-Patent Literature Citations (2)
Entry |
* ASM Committee on Aluminum And Aluminum Alloys, “Heat Treatment of Aluminum Alloys,” Metals Handbook, pp. 28-43, 9th Ed., vol. 2, (Nov. 1979). |
ALCOA Technical Data Sheet, “SEMI16: A 6xxx Alloy for Critical Anodized Parts”, AMP#193-C 04/99, Alcoa Mill Products, Bettendorf, IA. |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
10/161192 |
May 2002 |
US |
Child |
10/352631 |
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US |