Cleaning and refurbishing chamber components having metal coatings

Information

  • Patent Grant
  • 7910218
  • Patent Number
    7,910,218
  • Date Filed
    Wednesday, October 22, 2003
    20 years ago
  • Date Issued
    Tuesday, March 22, 2011
    13 years ago
Abstract
A component of a process chamber is refurbished and cleaned to remove an intermetallic compound from the component. The component has a structure having a coating that includes a first metal layer over the intermetallic compound. To refurbish the component, the first metal layer is removed to form an exposed surface that at least partially includes the intermetallic compound. The exposed surface is bead blasted in a penetrative bead blasting step by propelling blasting beads having a bead diameter of less than about 180 micrometers with a gas that is pressurized to a pressure of less than about 310 kPa (45 psi), towards the exposed surface, thereby removing the intermetallic compound from the exposed surface of the structure to form a cleaned surface. A second metal layer is then formed over the cleaned surface.
Description
BACKGROUND

Embodiments of the present invention relate to a method of cleaning and refurbishing process chamber components.


A substrate processing chamber is used to process a substrate in an energized process gas to manufacture electronic circuits, such as integrated circuit chips and displays. Typically, the process chamber comprises an enclosure wall that encloses a process zone into which a process gas is introduced, a gas energizer to energize the gas, and an exhaust system to exhaust and control the pressure of the gas. Components of the chamber, such as chamber walls, liners and depositions rings, are susceptible to corrosion by the energized gas used to process the substrate, especially when the process gas contains halogen species. Corrosion resistance can be improved by forming a corrosion resistant coating over the component, such as a twin-wire arc sprayed aluminum coating. The coating can also have a textured surface to which process residues adhere, thus inhibiting accumulated process residues from flaking off and contaminating the substrates being processed in the chamber.


Such coated components often require frequent cleaning and refurbishing to retain their properties. For example, when such chamber components are used in PVD processes to sputter deposit material onto a substrate from a target, the sputtered material also accumulates on the surfaces of the component. The accumulated process deposits cause thermal expansion stresses that result in delamination, cracking, and flaking-off of the coating from the underlying structure. The plasma in the chamber can penetrate through damaged areas of the coating to erode the exposed surfaces of the underlying structure, eventually leading to failure of the component. Thus, a refurbishing process is typically performed to clean and refurbish the coated component after a number of substrates have been processed. The refurbishment process may involve removing process deposits, such as sputtered material, that has accumulated on the coating surface, and re-coating the component with a corrosion resistant material. The refurbishment process reduces the incidence of spalling or peeling of the coating from the component during the processing of substrates, and thus reduces the contamination of substrates processed in the chamber.


In one conventional refurbishing process, a metal component is cleaned with an acidic and a basic cleaning solution to remove process residues accumulated on the coating as well as to dissolve and remove the metal coating from the component, as described for example in U.S. patent application Ser. No. 10/304,535, to Wang et al, filed on Nov. 25, 2002, and commonly assigned to Applied Materials, which is herein incorporated by reference in its entirety. The surface of the component is then grit blasted in a relatively harsh and aggressive bead blasting process that re-textures the surface of the component to provide a desired surface roughness, and thereby improves adhesion of a subsequently applied coating. The relatively harsh bead blasting step utilizes relatively large bead particles having a size of at least about 600 micrometers and a high bead blasting pressure of at least about 483 kPa (70 psi) to re-texture the surface and provide a surface having an average surface roughness of at least about 6.35 micrometers (250 microinches.) After bead blasting, the coating is re-applied to the component, for example in a twin wire arc spraying process.


However, a problem with the above-described process is that it typically fails to adequately remove sufficient amounts of intermetallic compounds that can develop at the interface between the metal coating and underlying metal component, and which are believed to result from thermal cycling of the parts in the process chamber. The intermetallic compounds weaken the bond between the coating and component and can cause spalling of the coating from the component, which can reduce the component part life as well as cause contamination of the substrates by the spalled coating materials. A large number of these intermetallic compounds can accumulate when process chamber temperatures above about 300° C. are used, and when processing large numbers of substrates without intervening component refurbishment steps.


Thus, it is desirable to have a process of refurbishing and cleaning a coated component to provide improved corrosion resistance of the component and a longer component chamber use life. In particular, it is desirable to have a process of refurbishing and cleaning a coated component that substantially entirely removes intermetallic compounds from the component to provide improved bonding between the coating and underlying component.


SUMMARY

A component of a process chamber is cleaned and refurbished to remove an intermetallic compound from the component surface. The component has a structure having a coating that includes a first metal layer over the intermetallic compound. To refurbish the component, the first metal layer is removed to form an exposed surface that at least partially includes the intermetallic compound. The first metal layer can be removed by, for example, immersing a surface of the first metal layer in a cleaning solution, such as an acidic or basic solution that at least partially dissolves the metal layer. The exposed surface is bead blasted in a penetrative bead blasting step by propelling blasting beads having a bead diameter of less than about 180 micrometers with a gas that is pressurized to a pressure of less than about 310 kPa (45 psi), towards the exposed surface, thereby removing the intermetallic compound from the exposed surface of the structure to form a cleaned surface. A second metal layer is then formed over the cleaned surface, for example by a twin-wire arc thermal spraying method.


The cleaned surface can also be texturized to provide a predetermined surface roughness by performing a texturizing bead blasting step that is performed before the second metal layer is formed over the surface. The texturizing bead blasting step includes propelling blasting beads having a bead diameter of greater than about 400 micrometers with a gas that is pressurized to a pressure of at least about 276 kPa (40 psi) towards the surface, thereby forming a textured surface having a surface roughness average of from about 3.81 micrometers (150 microinches) to about 8.89 micrometers (350 microinches.).





DRAWINGS

These features, aspects, and advantages of the present invention will become better understood with regard to the following description, appended claims, and accompanying drawings, which illustrate examples of the invention. However, it is to be understood that each of the features can be used in the invention in general, not merely in the context of the particular drawings, and the invention includes any combination of these features, where:



FIG. 1
a is a schematic side view of an embodiment of a component having an overlying coating and having intermetallic compounds between the coating and an underlying structure of the component;



FIG. 1
b is a schematic side view of the component of FIG. 1a after immersing the coating in a cleaning solution to remove the coating;



FIG. 1
c is a schematic side view of the component of FIG. 1b after a penetrative bead blasting step to remove intermetallic compounds from the component;



FIG. 1
d is a schematic side view of the component of FIG. 1c after a texturizing bead blasting step to roughen the surface of the component;



FIG. 1
e is a schematic side view of the component of FIG. 1d after re-applying a coating to the component;



FIG. 2 is a flow chart illustrating an embodiment of a component refurbishment process; and



FIG. 3 is a sectional side view of an embodiment of a process chamber having one or more coated components.





DESCRIPTION

The present process is suitable for cleaning and refurbishing a component 300 having a coating 302, as shown for example in FIG. 1a. The process may be used to clean and refurbish one or more of components 300 in the chamber 106 that are susceptible to erosion, such as for example, portions of one or more of a gas delivery system 112 that provides process gas in the chamber 106, a substrate support 114 that supports the substrate 104 in the chamber 106, a gas energizer 116 that energizes the process gas, chamber enclosure walls 118 and shields 120, and a gas exhaust 122 that exhausts gas from the chamber 106, exemplary embodiments of all of which are shown in FIG. 3. For example, in a physical vapor deposition chamber 106, the coated components 300 can comprise any of a chamber enclosure wall 118, a chamber shield 120, a target 124, a cover ring 126, a deposition ring 128, a support ring 130, insulator ring 132, a coil 135, coil support 137, shutter disk 133, clamp shield 141, and a surface 134 of the substrate support 114.


The chamber component 300 comprises an underlying structure 304 having an overlying coating 302 that covers at least a portion of the structure 304, as shown in FIG. 1a. The underlying structure 304 comprises a metal material that is resistant to erosion from an energized gas, such as an energized gas formed in a substrate processing environment. For example, the structure 304 can comprise at least one of aluminum, titanium, stainless steel, copper and tantalum. An upper surface 306 of the structure 304 contacts the coating 302, and has a surface roughness that improves adhesion of the overlying coating 302 to the structure 304. For example, the upper surface 306 can have a surface roughness of at least about 2.0 micrometers (80 microinches.) The coating 302 also comprises a metal material that has resistance to erosion in an energized gas, such as for example, at least one of aluminum, titanium, copper and chromium. The coating 302 can furthermore comprise an exposed surface 308 that is textured, such that process residues generated in the processing of substrates 104 adhere to the surface 308 of the coating 302.


The component 300 is cleaned and refurbished after processing one or more substrates 104 to remove process residues from the component 300 and clean the upper surface 306 of the structure 304 to provide a surface 306 having characteristics that allow for enhanced bonding between the underlying structure 304 and coating 302. For example, the upper surface 306 of the structure 304 may be cleaned to remove compounds or particulates from the surface 306 of the structure 304, such as intermetallic compounds 310 that develop at the interface between the coating 302 and structure 304, as shown in FIG. 1a. The surface 306 may also be textured by roughening the surface 306 to provide better adhesion between the coating 302 and structure 304.


An example of an embodiment of a cleaning and refurbishment process for a process chamber component 300 is shown in the flow chart of FIG. 2. This embodiment of the method generally comprises: removing a first metal layer 302a from the underlying structure 304 to expose a surface 306 having an intermetallic compound 310; performing a penetrative bead-blasting step to remove the intermetallic compound 310; performing a texturizing bead-blasting step to roughen the surface 306 to a predetermined average surface roughness; and forming a second metal layer 302b over the surface.


In one version, the coating 302 comprises a first metal layer 302a that is at least partially removed from the structure 304 by immersing the surface 308 of the coating 302 in a cleaning solution, such as an acidic or basic cleaning solution. A suitable acidic cleaning solution can comprise at least one of HF, HNO3, HCl, H3PO4, and H2SO4. A suitable basic cleaning solution can comprise at least one of KOH, NH4OH, NaOH, and K2CO3. The cleaning solution can be also tailored to remove built-up process residues from the component 300. In one version, the surface 308 is immersed in more than one cleaning solution to provide the desired removal of both the coating 302 and process residues. For example, the surface 308 of the coating 302 can be immersed in an acidic cleaning solution comprising from about 2 M to about 8 M HF, such as about 5 M HF and from about 2 M HNO3 to about 15 M HNO3, such as about 12 M HNO3. The surface 308 is then immersed in a basic cleaning solution comprising from about 1 M to about 8 M, such as about 3 M KOH. FIG. 1a shows a component 300 to be refurbished having a coating 302, and FIG. 1b shows a component 300 from which the coating 302 has been removed by immersing in a cleaning solution as a part of the refurbishment process.


Once the coating 302 has been removed, a cleaning step is performed to remove the intermetallic compounds 310 that develop on the structure surface 306 at the interface between the underlying structure 304 and coating 302. These intermetallic compounds, as shown for example in FIGS. 1a and 1b, can include metallic species from the coating 302 and structure 304 that form a disordered conglomeration of metallic compounds between the coating 302 and structure 304. It is believed that the intermetallic compounds 310 are formed by the thermal cycling of the coated components 300 during chamber operation, which leads to the disruption of the crystalline structures of the coating 302 and underlying structure 304, and the migration of the disrupted metal species to the interface. The intermetallic compounds 310 can comprise combinations of aggregated materials from both the coating 302 and underlying structure 304, such as for example FeAl, Fe3Al and NiAl compounds, and the intermetallic compounds can also form layers of the compounds on the surface 306 of the structure 304. Formation of the intermetallic compounds between the coating 302 and the structure 304 reduces the area of contact between the surface 306 and the coating 302, and thus reduces the adherence of the coating 302 to the structure surface 306.


It has been discovered that an improved process to remove the intermetallic compounds 310 from the exposed surface 306 comprises performing a penetrative bead blasting step. In a bead blasting process, solid blasting beads 312 are propelled toward the surface 306 of the underlying structure 304 by pressurized gas. The penetrative bead blasting process is performed by selecting bead blasting conditions to penetrate cracks and crevices 311 in the surface to remove the intermetallic compounds. For example, blasting beads 312 having smaller bead diameters can be selected that are capable of better penetrating narrow cracks and crevices 311 to provide better overall intermetallic compound removal. The bead diameter can be the diameter of beads comprising a substantially spherical shape, and can also be a measure of an average size of beads that are less than perfectly spherical, such as beads comprising oblong or even cube shapes. In one example, blasting beads 312 having a diameter of less than about 180 micrometers, such as from about 80 micrometers to about 180 micrometers, and even about 100 micrometers to about 180 micrometers, such as for example, about 150 micrometers, are propelled toward the surface 306. For example, the blasting beads can consist essentially of beads having a diameter of less than about 180 micrometers. This diameter can correspond to a grit mesh size of at least about 80, such as from about 80 to about 120, and even about 100. The bead diameter can also be selected to be smaller than an average width of the crevices 311, such that the beads penetrate into the crevices. Suitable bead materials can include for example, aluminum oxide, glass, silica, or hard plastic.


The penetrative bead blasting process also uses a relatively low pressure of the gas used to propel the finer blasting beads 312. The pressure of gas used to propel the beads 312 towards the surface in the penetrative bead blasting process can be less than about 310 kiloPascals (45 pounds-per square inch), such as from about 172 kPa (25 psi) to about 310 kPa (45 psi), and even about 241 kPa (35 psi.) Other bead blasting conditions suitable to provide the penetrative bead blasting process include: an angle of incidence of the beads 312 relative to the surface 306 of from about 35 to about 90 degrees, such as from about 35 to about 55 degrees, and even about 45 degrees; and a standoff distance traveled by the beads 306 from the bead blaster to the surface 306 of the underlying structure 304 of from about 10 cm to about 25 cm, such as from about 10 cm to about 15 cm.


The penetrative bead blasting process with finer beads and lower bead blasting pressures provided exceptional cleaning of the intermetallic compounds 310 on the surface 306 without damaging the underlying structure of the surface 306. The improved results provided by the relatively gentle penetrative bead blasting process are unexpected, as it was previously believed that more aggressive bead blasting processes were required for a more complete and thorough removal of intermetallic compounds 310 from the surface 306. The relatively gentler bead blasting process provides a surface 306 that is substantially absent intermetallic compounds 310, as shown for example in FIG. 1c, and thereby improves the process lifetime of the component 300, since the same component can be cleaned more times.


A subsequent texturizing bead blasting step is then performed to texture the surface 306 of the underlying structure 304 to improve adhesion of the subsequently applied coating 302. The texturizing bead blasting process can be performed to restore the desired surface roughness to the surface 306, which may have been reduced, for example, by chemical cleaning solutions used to remove the coating 302. The texturizing bead blasting process desirably comprises a relatively more aggressive bead blasting process than the penetrative bead blasting process, with blasting beads 312 having larger bead diameters that excavate larger regions of the surface 306. The process can also comprise higher gas pressures that propel the beads 312 with greater force against the surface 306 to provide the predetermined surface roughness. The aggressive texturizing step desirably provides an average surface roughness of the surface 306 of the structure of at least about 3.81 micrometers (150 microinches), and even at least about 4.32 micrometers (170 microinches), such as from about 3.81 micrometers (150 microinches) to about 8.89 micrometers (350 microinches), and even from about 4.45 micrometers (175 microinchess) to about 8.89 micrometers (350 microinches.) In one version, the surface 306 of a structure 304 comprising stainless steel is bead blasted to a roughness average of from about 4.45 micrometers (175 microinches) to about 6.35 micrometers (250 microinches), such as about 5.33 micrometers (210 microinches.) In another version, the surface 306 of a structure 304 comprising titanium is bead blasted to a roughness average of from about 4.45 micrometers (250 microinches) to about 8.89 micrometers (350 microinches), such as about 7.62 micrometers (300 microinches.) An example of a component 300 roughened in the texturizing bead blasting process is shown in FIG. 1d.


In an example of a suitable texturizing bead blasting step, blasting beads 312 having a diameter of at least about 400 micrometers, such as from about 400 micrometers to about 1000 micrometers, and even about 450 micrometers, are propelled towards the surface 306 to roughen the surface 306 to a predetermined surface roughness average. This bead size can correspond to a grit mesh size of less than about 70, such as from about 24 to about 70, and even about 36. A suitable pressure of air used to propel the beads 312 can be a pressure of at least about 138 kPa (20 psi), such as from about 138 kPa (20 psi) about 827 kPa (120 psi), and even at least about 276 kPa (40 psi), such as from about 276 kPa (40 psi) to about 414 kPa (60 psi), such as about 310 kPa (45 psi.) The pressure of air may also be at least about 69 kPa (10 psi) greater than the pressure used in the penetrative bead blasting step. Other bead blasting conditions suitable to provide the texturizing bead blasting process include: an angle of incidence of the beads 312 relative to the surface 306 of from about 45 to about 90 degrees, and even from about 50 to about 70 degrees; and a standoff distance traveled by the beads 312 from the bead blaster to the surface 306 of the underlying structure 304 of from about 10 cm to about 25 cm, such as from about 10 cm to about 15 cm. The texturizing bead blasting step is preferably performed after the penetrative bead blasting step once the intermetalllic compounds have been removed. However, the texturizing step can also be performed before the penetrative blasting step, and the texturizing and penetrative bead blasting steps can be repeated in an alternating or other sequence.


In measuring properties of the surface 306 such as roughness average, the international standard ANSI/ASME B.46.1-1995 specifying appropriate cut-off lengths and evaluation lengths, can be used. The following Table I shows the correspondence between values of roughness average, appropriate cut-off length, and minimum and typical evaluation length as defined by this standard:












TABLE I








Typ.




Min. Evaluation
Evaluation


Roughness Average
Cut-off Length
Length
Length





















0 to 0.8 microinches
0.003
inches
0.016
inches
0.016
inches


(0 to 0.02 micrometers)
(76.2
micrometers)
(0.406
millimeters)
(0.406
mm)


0.8 to 4 microinches
0.010
inches
0.050
inches
0.050
inches


(0.02 to 0.1 micrometers)
(254
micrometers)
(1.27
millimeters)
(1.27
mm)


4 to 80 microinches
0.030
inches
0.160
inches
0.160
inches


(0.1 to 2.0 micrometers)
(762
micrometers)
(4.06
millimeters)
(4.06
mm)


80 to 400 microinches
0.100
inches
0.300
inches
0.500
inches


(2.0 to 10.2 micrometers)
(2.54
millimeters)
(7.62
millimeters)
(12.7
mm)


400 microinches (10.2
0.300
inches
0.900
inches
1.600
inches


micrometers) and above
(7.62
millimeters)
(22.9
millimeters)
(40.6
mm)









The roughness average may be measured by a profilometer that passes a needle over the surface 306 and generates a trace of the fluctuations of the height of the asperities on the surface 306 or by a scanning electron microscope that uses an electron beam reflected from the surface 306 to generate an image of the surface 306.


Once the surface 306 of the underlying structure 304 has been cleaned and textured by the above-described refurbishment process, a coating 302 comprising a second metal layer 302b is formed over at least a portion of the surface 306. The second metal layer 302b can comprise the same or different material as the first metal layer 302a, for example the second metal layer 302b can comprise one or more metals that have substantial resistance to erosion in the substrate processing chamber, such as at least one of aluminum, titanium, copper and chromium. The coating 302 is applied by a method that provides a strong bond between the coating 302 and the underlying structure 304 to protect the underlying structure 304. For example, the coating 302 may be applied by one or more of a chemical or physical deposition process, or by a flame spraying or thermal spraying method, such as a twin wire arc spray method, plasma arc spray method, or oxy-fuel gas flame. An example of a refurbished component 300 having the coating 302 comprising the second metal layer is shown in FIG. 1e.


In one version, the coating 302 comprising the metal layer 302b is applied to the cleaned surface 306 by a twin wire arc spray process, as for example described in U.S. Pat. No. 6,227,435 B1, issued on May 8, 2001 to Lazarz et al, and U.S. Pat. No. 5,695,825 issued on Dec. 9, 1997 to Scruggs, both of which are incorporated herein by reference in their entireties. In the twin wire arc thermal spraying process, a thermal sprayer (not shown) comprises two consumable electrodes that are shaped and angled to allow an electric arc to form therebetween. For example, the consumable electrodes may comprise twin wires formed from the metal to be coated on the surface, which are angled towards each other to allow an electric discharge to form near the closest point. An electric arc discharge is generated between the consumable electrodes when a voltage is applied to the consumable electrodes as a carrier gas, such as one or more of air, nitrogen or argon, is flowed between the electrodes. Arcing between the electrodes atomizes and at least partially liquefies the metal on the electrodes, and carrier gas energized by the arcing electrodes propels the molten particles out of the thermal sprayer and towards the surface 306 of the underlying structure 304. The molten particles impinge on the surface 306 of the underlying structure 304, where they cool and condense to form a conformal coating 302. When wires are used as the consumable electrodes, the wires may be continuously fed into the thermal sprayer to provide a continuous supply of the metal material.


Operating parameters during thermal spraying are selected to be suitable to adjust the characteristics of the coating material application, such as the temperature and velocity of the coating material as it traverses the path from the thermal sprayer to the underlying structure surface 306. For example, gas flows, power levels, powder feed rate, carrier gas flow, standoff distance from the thermal sprayer to the surface 306, and the angle of deposition of the coating material relative to the surface 306 can be selected to improve the application of the coating material and the subsequent adherence of the coating 302 to the underlying structure surface 306. For example, the voltage between the consumable electrodes may be selected to be from about 10 Volts to about 50 Volts, such as about 30 Volts. Additionally, the current that flows between the consumable electrodes may be selected to be from about 100 Amps to about 1000 Amps, such as about 200 Amps. The power level of the thermal sprayer is usually in the range of from about 6 to about 80 kiloWatts, such as about 10 kiloWatts.


The standoff distance and angle of deposition can also be selected to adjust the deposition characteristics of the coating material on the surface 306. For example, the standoff distance and angle of deposition can be adjusted to modify the pattern in which the molten coating material splatters upon impacting the surface, to form for example, “pancake” and “lamella” patterns. The standoff distance and angle of deposition can also be adjusted to modify the phase, velocity, or droplet size of the coating material when it impacts the surface 306. In one embodiment, the standoff distance between the thermal sprayer and the surface is about 15 cm, and the angle of deposition of the coating material onto the surface 306 is about 90 degrees.


The velocity of the coating material can be adjusted to suitably deposit the coating material on the surface 306. In one embodiment, the velocity of the powdered coating material is from about 100 to about 300 meters/second. Also, the thermal sprayer may be adapted so that the temperature of the coating material is at least about melting temperature when the coating material impacts the surface. Temperatures above the melting point can yield a coating of high density and bonding strength. For example, the temperature of the energized carrier gas about the electric discharge may exceed 5000° C. However, the temperature of the energized carrier gas about the electric discharge can also be set to be sufficiently low that the coating material remains molten for a period of time upon impact with the surface 306. For example, an appropriate period of time may be at least about a few seconds.


The thermal spraying process parameters are desirably selected to provide a coating 306 having desired structure and surface characteristics, such as for example a desired coating thickness, coating surface roughness, and the porosity of the coating, which contribute to the improved performance of the coated components. The thickness of the coating 302 can affect how well the coating 302 adheres to the underlying structure 304 and the erosion resistance of the component 300. A suitable thickness of the coating 302 may be, for example, from about 152 micrometers (0.006 inches) to about 508 micrometers (0.02 inches). For an underlying structure 304 covered by an aluminum coating 302, such as a coated stainless steel or titanium structure, a suitable thickness of the coating 302 may be from about 254 micrometers (0.01 inches) to about 508 micrometers (0.02 inches), such as about 304 micrometers (0.012 inches.) The thermal spraying process parameters can also be selected to provide a coating 302 having a textured surface 308 to which process residues can adhere. For example, the coating 302 may have a textured surface 308 having a surface roughness of from about 25 micrometers (1000 microinches) to about 50.8 micrometers (2000 microinches.)


Additional cleaning steps can also be performed to clean one or more of the coating 302 and underlying structure surface 306. For example, the underlying structure surface 306 can be cleaned after bead blasting and before the coating 302 is applied by performing an ultrasonic cleaning step in which the surface 306 of the underlying structure 304 is immersed in a cleaning bath comprising de-ionized water, and sound waves are introduced into the cleaning bath to lightly agitate the surface 306. The surface 306 can then be heated to a temperature of at least 100° C. to dry the component 300 and remove volatile impurities. The surface 308 of the coating 302 can also be cleaned in a deionized water ultrasonic cleaning step. A pressurized flow of N2 can also be provided to clean the surfaces of the coating 302 or underlying structure 304.


A component 300 that has been cleaned and refurbished according to the described process shows substantially improved bonding between the coating 302 and the underlying structure 304, and improved component lifetime. For example, a component cleaned and coated according to the process provides enhanced performance in a deposition chamber 106, where sputtered material formed in the chamber 106 can accumulate on exposed surfaces of the component 300 to a thickness of at least about 100 micrometers, and even up to about 300 micrometers, substantially without causing spalling of the coating 302 from the component 300. Also, the component cleaned and refurbished according to the method can be used to process at least about 4 substrates 104 substantially without spalling of the coating 302. Additionally, the improved refurbishment process allows the coated component 300 to be refurbished and re-used at least about 15 times, substantially without failure of the component 300. In comparison, a conventional refurbishing process that does not sufficiently remove the intermetallic compounds 310, allows the component 300 to be refurbished and re-used only 5 times. Thus the present refurbishment process provides a component 300 having a lifetime that is at least twice as long as that of conventionally refurbished components 300.


An example of a suitable process chamber 106 having a component refurbished according to the process is shown in FIG. 3. The chamber 106 can be a part of a multi-chamber platform (not shown) having a cluster of interconnected chambers connected by a robot arm mechanism that transfers substrates 104 between the chambers 106. In the version shown, the process chamber 106 comprises a sputter deposition chamber, also called a physical vapor deposition or PVD chamber, that is capable of sputter depositing material on a substrate 104, such as one or more of tantalum, tantalum nitride, titanium, titanium nitride, copper, tungsten, tungsten nitride and aluminum. The chamber 106 comprises enclosure walls 118 that enclose a process zone 109, and that include sidewalls 164, a bottom wall 166, and a ceiling 168. A support ring 130 can be arranged between the sidewalls 164 and ceiling 168 to support the ceiling 168. Other chamber walls can include one or more shields 120 that shield the enclosure walls 118 from the sputtering environment.


The chamber 106 comprises a substrate support 114 to support the substrate in the sputter deposition chamber 106. The substrate support 114 may be electrically floating or may comprise an electrode 170 that is biased by a power supply 172, such as an RF power supply. The substrate support 114 can also comprise a shutter disk 133 that can protect the upper surface 134 of the support 114 when the substrate 104 is not present. In operation, the substrate 104 is introduced into the chamber 106 through a substrate loading inlet (not shown) in a sidewall 164 of the chamber 106 and placed on the support 114. The support 114 can be lifted or lowered by support lift bellows and a lift finger assembly (not shown) can be used to lift and lower the substrate onto the support 114 during transport of the substrate 104 into and out of the chamber 106.


The support 114 may also comprise one or more rings, such as a cover ring 126 and a deposition ring 128, that cover at least a portion of the upper surface 134 of the support 114 to inhibit erosion of the support 114. In one version, the deposition ring 128 at least partially surrounds the substrate 104 to protect portions of the support 114 not covered by the substrate 104. The cover ring 126 encircles and covers at least a portion of the deposition ring 128, and reduces the deposition of particles onto both the deposition ring 128 and the underlying support 114.


A process gas, such as a sputtering gas, is introduced into the chamber 106 through a gas delivery system 112 that includes a process gas supply comprising one or more gas sources 174 that each feed a conduit 176 having a gas flow control valve 178, such as a mass flow controller, to pass a set flow rate of the gas therethrough. The conduits 176 can feed the gases to a mixing manifold (not shown) in which the gases are mixed to from a desired process gas composition. The mixing manifold feeds a gas distributor 180 having one or more gas outlets 182 in the chamber 106. The process gas may comprise a non-reactive gas, such as argon or xenon, which is capable of energetically impinging upon and sputtering material from a target. The process gas may also comprise a reactive gas, such as one or more of an oxygen-containing gas and a nitrogen-containing gas, that are capable of reacting with the sputtered material to form a layer on the substrate 104. Spent process gas and byproducts are exhausted from the chamber 106 through an exhaust 120 which includes one or more exhaust ports 184 that receive spent process gas and pass the spent gas to an exhaust conduit 186 in which there is a throttle valve 188 to control the pressure of the gas in the chamber 106. The exhaust conduit 186 feeds one or more exhaust pumps 190. Typically, the pressure of the sputtering gas in the chamber 106 is set to sub-atmospheric levels.


The sputtering chamber 106 further comprises a sputtering target 124 facing a surface 105 of the substrate 104, and comprising material to be sputtered onto the substrate 104. The target 124 is electrically isolated from the chamber 106 by an annular insulator ring 132, and is connected to a power supply 192. The sputtering chamber 106 also has a shield 120 to protect a wall 118 of the chamber 106 from sputtered material. The shield 120 can comprise a wall-like cylindrical shape having upper and lower shield sections 120a, 120b that shield the upper and lower regions of the chamber 106. In the version shown in FIG. 3, the shield 120 has an upper section 120a mounted to the support ring 130 and a lower section 120b that is fitted to the cover ring 126. A clamp shield 141 comprising a clamping ring can also be provided to clamp the upper and lower shield sections 120a,b together. Alternative shield configurations, such as inner and outer shields, can also be provided. In one version, one or more of the power supply 192, target 124, and shield 120, operate as a gas energizer 116 that is capable of energizing the sputtering gas to sputter material from the target 124. The power supply 192 applies a bias voltage to the target 124 with respect to the shield 120. The electric field generated in the chamber 106 from the applied voltage energizes the sputtering gas to form a plasma that energetically impinges upon and bombards the target 124 to sputter material off the target 124 and onto the substrate 104. The support 114 having the electrode 170 and support electrode power supply 172 may also operate as part of the gas energizer 116 by energizing and accelerating ionized material sputtered from the target 124 towards the substrate 104. Furthermore, a gas energizing coil 135 can be provided that is powered by a power supply 192 and that is positioned within the chamber 106 to provide enhanced energized gas characteristics, such as improved energized gas density. The gas energizing coil 135 can be supported by a coil support 137 that is attached to a shield 120 or other wall in the chamber 106.


The chamber 106 is controlled by a controller 194 that comprises program code having instruction sets to operate components of the chamber 106 to process substrates 104 in the chamber 106. For example, the controller 194 can comprise a substrate positioning instruction set to operate one or more of the substrate support 114 and substrate transport to position a substrate 104 in the chamber 106; a gas flow control instruction set to operate the flow control valves 178 to set a flow of sputtering gas to the chamber 106; a gas pressure control instruction set to operate the exhaust throttle valve 188 to maintain a pressure in the chamber 106; a gas energizer control instruction set to operate the gas energizer 116 to set a gas energizing power level; a temperature control instruction set to control temperatures in the chamber 106; and a process monitoring instruction set to monitor the process in the chamber 106.


Although exemplary embodiments of the present invention are shown and described, those of ordinary skill in the art may devise other embodiments which incorporate the present invention, and which are also within the scope of the present invention. For example, other chamber components than the exemplary components described herein can also be cleaned. Other cleaning steps can also be used in combination with those described. Furthermore, relative or positional terms shown with respect to the exemplary embodiments are interchangeable. Therefore, the appended claims should not be limited to the descriptions of the preferred versions, materials, or spatial arrangements described herein to illustrate the invention.

Claims
  • 1. A refurbished component for a process chamber, the component comprising a titanium structure having a refurbished textured titanium metal coating, wherein the component is refurbished by: (i) immersing the component in a cleaning solution to remove an original titanium coating to expose an intermetallic compound on the titanium structure of the component;(ii) removing the intermetallic compound by bead blasting with blasting beads having a bead diameter of less than about 180 micrometers propelled by a gas pressurized to a pressure of less than about 45 psi to form an exposed surface of the structure;(iii) texturizing the exposed surface of the titanium structure by bead blasting with blasting beads having a bead diameter of less than about 1000 micrometers, the blasting beads being propelled by a gas pressurized to a pressure of less than about 60 psi, to form a textured surface having a surface roughness average of from about 150 microinches to about 350 microinches; and(iv) forming the refurbished textured titanium metal coating on and in contact with the textured surface of the titanium structure by twin-wire arc spray coating,whereby the refurbished component is capable of being refurbished by the method at least about 15 times substantially without failure of the component.
  • 2. A component according to claim 1 wherein the component comprises at least a portion of an enclosure wall, chamber shield, target, cover ring, deposition ring, support ring, insulator ring, coil, coil support, shutter disk, clamp shield or substrate support.
  • 3. A component according to claim 1 wherein the intermetallic compound comprises at least one of aluminum, titanium, stainless steel, copper and tantalum.
  • 4. A component according to claim 1 wherein in (i) the cleaning solution comprises an acidic or basic solution to dissolve the original titanium coating.
  • 5. A component according to claim 1 wherein in (i) the cleaning solution comprises HF and HNO3.
  • 6. A component according to claim 1 wherein (ii) comprises bead blasting the intermetallic compound with blasting beads having a bead diameter greater than about 80 micrometers.
  • 7. A component according to claim 1 wherein (ii) comprises bead blasting the intermetallic compound by propelling blasting beads towards the intermetallic compound with a gas that is pressurized to a pressure of greater than about 25 psi.
  • 8. A component according to claim 1 wherein in (iii) the texturizing bead blasting step comprises propelling blasting beads having a bead diameter of greater than about 400 micrometers at the exposed surface of the structure with gas that is pressurized to a pressure of at least about 40 psi.
  • 9. A component according to claim 1 wherein the exposed surface of the structure comprises crevices, and wherein the bead diameter of the blasting beads is selected to be smaller than the average width of the crevices, whereby the blasting beads can penetrate into the crevices to remove the intermetallic compound.
  • 10. A component according to claim 1 wherein (iv) comprises generating an electrical arc that at least partially liquefies a titanium coating material, and passing a pressurized gas past the liquefied titanium coating material to propel the liquefied titanium coating material towards the textured surface.
  • 11. A substrate processing chamber component comprising: (a) a titanium structure comprising at least a portion of an enclosure wall, chamber shield, cover ring or deposition ring; and(b) a titanium metal coating on and in contact with the titanium structure, the titanium metal coating having a textured surface.
  • 12. A component according to claim 11 wherein the titanium metal coating comprises a twin-wire arc sprayed titanium coating.
  • 13. A component according to claim 11 wherein the titanium metal coating has a thickness of from about 6 to about 20 microinches.
  • 14. A component according to claim 11 wherein the titanium metal coating comprises a surface roughness of from about 1000 microinches to about 2000 microinches.
  • 15. A substrate processing chamber component comprising: (a) a structure made from titanium, the titanium structure comprising at least a portion of an enclosure wall, chamber shield, cover ring or deposition ring; and(b) a titanium metal coating on and in contact with the titanium structure, the titanium coating having a textured surface.
  • 16. A component according to claim 15 wherein the titanium metal coating comprises a twin-wire arc sprayed titanium metal coating.
  • 17. A component according to claim 15 wherein the titanium metal coating has a thickness of from about 6 to about 20 microinches.
  • 18. A component according to claim 15 wherein the titanium metal coating comprises a surface roughness of from about 1000 microinches to about 2000 microinches.
  • 19. A substrate processing chamber component comprising: (a) a structure made from titanium, the titanium structure comprising at least a portion of an enclosure wall, chamber shield, cover ring or deposition ring; and (b) a titanium metal coating on and in contact with the titanium structure, the titanium metal coating comprising a twin-wire arc sprayed titanium metal coating having a textured surface.
  • 20. A component according to claim 19 wherein the titanium metal coating has a thickness of from about 6 to about 20 microinches.
  • 21. A component according to claim 19 wherein the titanium metal coating comprises a surface roughness of from about 1000 microinches to about 2000 microinches.
  • 22. A substrate processing chamber component comprising: (a) a titanium structure comprising at least a portion of an enclosure wall, chamber shield, cover ring or deposition ring; and(b) a titanium metal coating on and in contact with the titanium structure, the titanium metal coating comprising a twin-wire arc sprayed titanium metal coating having a textured surface and a thickness of from about 6 to about 20 microinches.
  • 23. A component according to claim 22 wherein the titanium metal coating comprises a surface roughness of from about 1000 microinches to about 2000 microinches.
US Referenced Citations (301)
Number Name Date Kind
2705500 Deer Apr 1955 A
3117883 Pierett Jan 1964 A
3457151 Kortejarvi Jul 1969 A
3482082 Israeli Dec 1969 A
3522083 Woolman Jul 1970 A
3565771 Gulla Feb 1971 A
3679460 Reid Jul 1972 A
4100252 Pitts Jul 1978 A
RE31198 Binns Apr 1983 E
4412133 Eckes et al. Oct 1983 A
4419201 Levinstein et al. Dec 1983 A
4480284 Tojo et al. Oct 1984 A
4491496 Laporte et al. Jan 1985 A
4606802 Kobayashi et al. Aug 1986 A
4645218 Ooshio et al. Feb 1987 A
4665463 Ward et al. May 1987 A
4673554 Niwa et al. Jun 1987 A
4713119 Earhart et al. Dec 1987 A
4717462 Homma et al. Jan 1988 A
4732792 Fujiyama Mar 1988 A
4756322 Lami Jul 1988 A
4832781 Mears May 1989 A
4872250 De Marco Oct 1989 A
4913784 Bogenshutz et al. Apr 1990 A
4959105 Neidiffer et al. Sep 1990 A
4995958 Anderson et al. Feb 1991 A
4996859 Rose et al. Mar 1991 A
5009966 Garg et al. Apr 1991 A
5032469 Merz et al. Jul 1991 A
5055964 Logan et al. Oct 1991 A
5064511 Gobbetti Nov 1991 A
5104501 Okabayashi Apr 1992 A
5104834 Watanabe et al. Apr 1992 A
5117121 Watanabe et al. May 1992 A
5151845 Watanabe et al. Sep 1992 A
5164016 Henriet et al. Nov 1992 A
5166856 Liporace et al. Nov 1992 A
5180322 Yamamoto et al. Jan 1993 A
5180563 Lai et al. Jan 1993 A
5191506 Logan et al. Mar 1993 A
5202008 Talieh Apr 1993 A
5215624 Dastolfo et al. Jun 1993 A
5215639 Boys Jun 1993 A
5248386 Dastolfo et al. Sep 1993 A
5258047 Tokisue et al. Nov 1993 A
5270266 Hirano et al. Dec 1993 A
5275683 Arami et al. Jan 1994 A
5280156 Niori et al. Jan 1994 A
5314597 Harra May 1994 A
5315473 Collins et al. May 1994 A
5324053 Kubota et al. Jun 1994 A
5325261 Horwitz Jun 1994 A
5338367 Henriet et al. Aug 1994 A
5350479 Collins et al. Sep 1994 A
5356723 Kimoto et al. Oct 1994 A
5366585 Robertson et al. Nov 1994 A
5382469 Kubota et al. Jan 1995 A
5391275 Mintz Feb 1995 A
5401319 Banholzer et al. Mar 1995 A
5407551 Sieck et al. Apr 1995 A
5409590 Hurwitt et al. Apr 1995 A
5429711 Watanabe et al. Jul 1995 A
5433835 Demaray et al. Jul 1995 A
5458759 Hosokawa et al. Oct 1995 A
5460694 Schapira et al. Oct 1995 A
5463526 Mundt Oct 1995 A
5474649 Kava et al. Dec 1995 A
5487822 Demaray et al. Jan 1996 A
5490913 Schertler et al. Feb 1996 A
5509558 Imai et al. Apr 1996 A
5512078 Griffin Apr 1996 A
5520740 Kanai et al. May 1996 A
5531835 Fodor et al. Jul 1996 A
5536723 Loscalzo et al. Jul 1996 A
5542559 Kawakami et al. Aug 1996 A
5549802 Guo Aug 1996 A
5587039 Salimian et al. Dec 1996 A
5614071 Mahvan et al. Mar 1997 A
5643422 Yamada Jul 1997 A
5660640 Laube Aug 1997 A
5671835 Tanaka et al. Sep 1997 A
5684669 Collins et al. Nov 1997 A
5685914 Hills et al. Nov 1997 A
5685959 Bourez et al. Nov 1997 A
5695825 Scruggs Dec 1997 A
5700179 Hasegawa et al. Dec 1997 A
5714010 Matsuyama et al. Feb 1998 A
5720818 Donde et al. Feb 1998 A
5736021 Ding et al. Apr 1998 A
5745331 Shamoulian et al. Apr 1998 A
5755887 Sano et al. May 1998 A
5762748 Banholzer et al. Jun 1998 A
5792562 Collins et al. Aug 1998 A
5808270 Marantz et al. Sep 1998 A
5812362 Ravi Sep 1998 A
5821166 Hajime et al. Oct 1998 A
5824197 Tanaka Oct 1998 A
5830327 Kolnekow Nov 1998 A
5840434 Kojima et al. Nov 1998 A
5858100 Maeda et al. Jan 1999 A
5876573 Moslehi et al. Mar 1999 A
5879523 Wang et al. Mar 1999 A
5879524 Hurwitt et al. Mar 1999 A
5885428 Kogan Mar 1999 A
5886863 Nagasaki et al. Mar 1999 A
5903428 Grimard et al. May 1999 A
5910338 Donde et al. Jun 1999 A
5916378 Bailey et al. Jun 1999 A
5916454 Richardson et al. Jun 1999 A
5920764 Hanson Jul 1999 A
5930661 Lu Jul 1999 A
5939146 Lavernia Aug 1999 A
5942041 Lo et al. Aug 1999 A
5942445 Kato et al. Aug 1999 A
5948288 Treves et al. Sep 1999 A
5951374 Kato et al. Sep 1999 A
5953827 Or et al. Sep 1999 A
5963778 Stellrecht Oct 1999 A
5967047 Ag Oct 1999 A
5976327 Tanaka Nov 1999 A
6010583 Annavarapu et al. Jan 2000 A
6015465 Kholodenko et al. Jan 2000 A
6026666 Zimmermann et al. Feb 2000 A
6027604 Lim et al. Feb 2000 A
6051114 Yao et al. Apr 2000 A
6051122 Flanigan Apr 2000 A
6059945 Fu et al. May 2000 A
6071389 Zhang Jun 2000 A
6073830 Hunt et al. Jun 2000 A
6086735 Gilman et al. Jul 2000 A
6108189 Weldon et al. Aug 2000 A
6120621 Jin et al. Sep 2000 A
6120640 Shih et al. Sep 2000 A
6143432 de Rochemont et al. Nov 2000 A
6146509 Aragon Nov 2000 A
6149784 Su et al. Nov 2000 A
6150762 Kim et al. Nov 2000 A
6152071 Akiyama et al. Nov 2000 A
6159299 Koai et al. Dec 2000 A
6162297 Mintz et al. Dec 2000 A
6162336 Lee Dec 2000 A
6170429 Schoepp et al. Jan 2001 B1
6183614 Fu Feb 2001 B1
6183686 Bardus et al. Feb 2001 B1
6190516 Xiong et al. Feb 2001 B1
6198067 Ikeda et al. Mar 2001 B1
6199259 Demaray et al. Mar 2001 B1
6221217 Moslehi et al. Apr 2001 B1
6227435 Lazarz et al. May 2001 B1
6235163 Angalo et al. May 2001 B1
6238528 Xu et al. May 2001 B1
6248667 Kim et al. Jun 2001 B1
6250251 Akiyama et al. Jun 2001 B1
6269670 Koestermeier Aug 2001 B2
6274008 Gopalraja et al. Aug 2001 B1
6276997 Li Aug 2001 B1
6280584 Kumar et al. Aug 2001 B1
6284093 Ke et al. Sep 2001 B1
6287437 Pandhumsoporn et al. Sep 2001 B1
6299740 Hieronymi et al. Oct 2001 B1
6306489 Hellmann et al. Oct 2001 B1
6306498 Quarzglas Oct 2001 B1
6338781 Sichmann et al. Jan 2002 B1
6338906 Ritland et al. Jan 2002 B1
6340415 Raaijmakers et al. Jan 2002 B1
6344114 Sichmann et al. Feb 2002 B1
6364957 Schneider et al. Apr 2002 B1
6365010 Hollars Apr 2002 B1
6372609 Aga Apr 2002 B1
6379575 Yin et al. Apr 2002 B1
6383459 Singh et al. May 2002 B1
6387809 Toyama May 2002 B2
6394023 Crocker May 2002 B1
6401652 Mohn et al. Jun 2002 B1
6416634 Mostovoy et al. Jul 2002 B1
6423175 Huang et al. Jul 2002 B1
6444083 Steger et al. Sep 2002 B1
6447853 Suzuki et al. Sep 2002 B1
6454870 Brooks Sep 2002 B1
6464794 Park et al. Oct 2002 B1
6475336 Hubacek Nov 2002 B1
6500321 Ashtiani et al. Dec 2002 B1
6506312 Bottomfield Jan 2003 B1
6545267 Miura et al. Apr 2003 B1
6555471 Sandhu et al. Apr 2003 B2
6558505 Suzuki et al. May 2003 B2
6565984 Wu et al. May 2003 B1
6566161 Rosenberg et al. May 2003 B1
6576909 Donaldson et al. Jun 2003 B2
6579431 Bolcavage et al. Jun 2003 B1
6592830 Krupin et al. Jul 2003 B1
6599405 Hunt et al. Jul 2003 B2
6619537 Zhang et al. Sep 2003 B1
6620736 Drewery Sep 2003 B2
6623595 Han et al. Sep 2003 B1
6623597 Han et al. Sep 2003 B1
6623610 Onishi Sep 2003 B1
6627050 Miller et al. Sep 2003 B2
H2087 Balliett et al. Nov 2003 H
6645357 Powell Nov 2003 B2
6652668 Perry et al. Nov 2003 B1
6652716 Kao et al. Nov 2003 B2
6660135 Yu et al. Dec 2003 B2
6676812 Chung Jan 2004 B2
6708870 Koenigsmann et al. Mar 2004 B2
6743340 Fu Jun 2004 B2
6749103 Ivanov et al. Jun 2004 B1
6776879 Yamamoto et al. Aug 2004 B2
6777045 Lin et al. Aug 2004 B2
6797362 Parfeniuk et al. Sep 2004 B2
6797639 Carducci et al. Sep 2004 B2
6812471 Popiolkowski et al. Nov 2004 B2
6824652 Park Nov 2004 B2
6840427 Ivanov Jan 2005 B2
6858116 Okabe et al. Feb 2005 B2
6872284 Ivanov et al. Mar 2005 B2
6902627 Brueckner et al. Jun 2005 B2
6902628 Wang et al. Jun 2005 B2
6916407 Vosser et al. Jul 2005 B2
6933025 Lin et al. Aug 2005 B2
6933508 Popiolkowski et al. Aug 2005 B2
6955748 Kim Oct 2005 B2
6955852 Ivanov Oct 2005 B2
6992261 Kachalov et al. Jan 2006 B2
7026009 Lin et al. Apr 2006 B2
7041200 Le et al. May 2006 B2
7063773 Ivanov et al. Jun 2006 B2
7121938 Suzuki Oct 2006 B2
7131883 Park et al. Nov 2006 B2
7146703 Ivanov Dec 2006 B2
7264679 Schweitzer et al. Sep 2007 B2
7504008 Doan et al. Mar 2009 B2
7579067 Lin et al. Aug 2009 B2
7618769 Brueckner et al. Nov 2009 B2
20010001367 Koestermeier May 2001 A1
20010033706 Shimomura et al. Oct 2001 A1
20010045353 Hieronymi et al. Nov 2001 A1
20020029745 Nagaiwa et al. Mar 2002 A1
20020033330 Demaray et al. Mar 2002 A1
20020076490 Chiang et al. Jun 2002 A1
20020086118 Chang et al. Jul 2002 A1
20020090464 Mingwei et al. Jul 2002 A1
20020100680 Yamamoto et al. Aug 2002 A1
20030019746 Ford et al. Jan 2003 A1
20030026917 Lin et al. Feb 2003 A1
20030047464 Sun et al. Mar 2003 A1
20030108680 Gell et al. Jun 2003 A1
20030116276 Weldon et al. Jun 2003 A1
20030118731 He et al. Jun 2003 A1
20030127319 Demaray et al. Jul 2003 A1
20031364248 Krogh Jul 2003
20030168168 Liu et al. Sep 2003 A1
20030170486 Austin et al. Sep 2003 A1
20030173526 Popiolkowski et al. Sep 2003 A1
20030185965 Lin et al. Oct 2003 A1
20030196890 Le et al. Oct 2003 A1
20030218054 Koenigsmann et al. Nov 2003 A1
20030221702 Peebles Dec 2003 A1
20040045574 Tan Mar 2004 A1
20040056070 Ivanov Mar 2004 A1
20040056211 Popiolkowski et al. Mar 2004 A1
20040079634 Wickersham et al. Apr 2004 A1
20040099285 Wang et al. May 2004 A1
20040113364 Ivanov Jun 2004 A1
20040180158 Lin et al. Sep 2004 A1
20040256226 Wickersham Dec 2004 A1
20040261946 Endoh et al. Dec 2004 A1
20050011749 Kachalov et al. Jan 2005 A1
20050028838 Brueckner Feb 2005 A1
20050048876 West et al. Mar 2005 A1
20050061857 Hunt et al. Mar 2005 A1
20050067469 Facey et al. Mar 2005 A1
20050089699 Lin et al. Apr 2005 A1
20050092604 Ivanov May 2005 A1
20050098427 Cho et al. May 2005 A1
20050147150 Wickersham et al. Jul 2005 A1
20050161322 Smathers Jul 2005 A1
20050178653 Fisher Aug 2005 A1
20050211548 Gung et al. Sep 2005 A1
20050238807 Lin Oct 2005 A1
20050271984 Brueckner et al. Dec 2005 A1
20050282358 Di Cioccio et al. Dec 2005 A1
20050284372 Murugesh et al. Dec 2005 A1
20060005767 Tsai et al. Jan 2006 A1
20060070876 Wu et al. Apr 2006 A1
20060090706 Miller et al. May 2006 A1
20060105182 Brueckner et al. May 2006 A1
20060108217 Krempel-Hesse et al. May 2006 A1
20060110620 Lim et al. May 2006 A1
20060188742 West et al. Aug 2006 A1
20060251822 Gell et al. Nov 2006 A1
20060283703 Lee et al. Dec 2006 A1
20070059460 Abney et al. Mar 2007 A1
20070102286 Scheible et al. May 2007 A1
20070113783 Lee et al. May 2007 A1
20070125646 Young et al. Jun 2007 A1
20070170052 Ritchie et al. Jul 2007 A1
20070215463 Parkhe et al. Sep 2007 A1
20070283884 Tiller et al. Dec 2007 A1
20080178801 Pavloff et al. Jul 2008 A1
20080257263 Pavloff et al. Oct 2008 A1
Foreign Referenced Citations (84)
Number Date Country
19719133 Nov 1998 DE
0439000 Jul 1991 EP
0239349 Jul 1992 EP
0601788 Jun 1994 EP
0635869 Jan 1995 EP
0791956 Aug 1997 EP
0818803 Jan 1998 EP
0838838 Apr 1998 EP
0838838 Apr 1998 EP
0845545 Jun 1998 EP
1049133 Nov 2000 EP
1094496 Apr 2001 EP
1158072 Nov 2001 EP
1258908 Nov 2002 EP
2562097 Oct 1985 FR
1424365 Feb 1976 GB
54162696 Dec 1979 JP
54162969 Dec 1979 JP
11-59368 Dec 1987 JP
63235435 Sep 1988 JP
02-027748 Jan 1990 JP
02-101157 Apr 1990 JP
03-138354 Jun 1991 JP
06-232243 Aug 1994 JP
07-197272 Aug 1995 JP
09-017850 Jan 1997 JP
09-272965 Oct 1997 JP
10-045461 Feb 1998 JP
63149396 Jun 1998 JP
10-251871 Sep 1998 JP
10-330971 Dec 1998 JP
11-137440 May 1999 JP
11-220164 Aug 1999 JP
11-283972 Oct 1999 JP
2000-228398 Oct 1999 JP
2250990 Oct 1999 JP
11-345780 Dec 1999 JP
2000-072529 Mar 2000 JP
2000-191370 Jul 2000 JP
2002-069695 Mar 2002 JP
2002-069696 Mar 2002 JP
546680 Aug 2003 TW
WO-9523428 Aug 1995 WO
WO-9708734 Mar 1997 WO
WO-9742648 Nov 1997 WO
WO-9850599 Nov 1998 WO
WO-9852208 Nov 1998 WO
WO-9903131 Jan 1999 WO
WO-9913126 Mar 1999 WO
WO-9913545 Mar 1999 WO
WO-9914788 Mar 1999 WO
9917336 Apr 1999 WO
WO-9917336 Apr 1999 WO
WO-9928945 Jun 1999 WO
WO-9941426 Aug 1999 WO
WO-0005751 Feb 2000 WO
WO-0026939 May 2000 WO
WO-0184590 Nov 2001 WO
WO-0184624 Nov 2001 WO
WO-0215255 Feb 2002 WO
WO-0223587 Mar 2002 WO
WO 02093624 Nov 2002 WO
WO-03015137 Feb 2003 WO
WO-03057943 Jul 2003 WO
WO-03076683 Sep 2003 WO
WO-03083160 Oct 2003 WO
WO-03083160 Oct 2003 WO
WO-03087427 Oct 2003 WO
WO-03090248 Oct 2003 WO
WO-2004010494 Jan 2004 WO
WO-2004012242 Feb 2004 WO
WO-2004015736 Feb 2004 WO
WO-2004074932 Sep 2004 WO
WO-2004094702 Nov 2004 WO
WO-2005021173 Mar 2005 WO
WO 2005071137 Aug 2005 WO
WO-2006053231 May 2006 WO
WO-2006073585 Jul 2006 WO
WO-2006073585 Jul 2006 WO
WO-2007-030824 Mar 2007 WO
WO 2008079722 Jul 2008 WO
WO-2008079722 Jul 2008 WO
WO-2008-133876 Nov 2008 WO
WO-2008-153785 Dec 2008 WO
Related Publications (1)
Number Date Country
20050089699 A1 Apr 2005 US