Cleaning solution for substrate for use in semiconductor device and cleaning method using the same

Abstract

The invention provides a cleaning solution for use in cleaning a substrate for semiconductor device use after a chemical mechanical polishing process has been carried out in production of a semiconductor device. The cleaning solution contains a compound represented by the following formula (I) and an organic acid. In formula (1), R represents a hydrocarbon group, and n and m each independently represent an integer of 2 or more.

Description

Claims

1. A cleaning solution for cleaning a substrate for semiconductor device use after a chemical mechanical polishing process has been carried out in production of a semiconductor device, the cleaning solution comprising a compound represented by the following formula (I), and an organic acid:

2. The cleaning solution of claim 1, wherein the sum of m and n is from 4 to 1000.

3. The cleaning solution of claim 1, wherein the pH of the cleaning solution is in a range of from pH1 to 5.

4. The cleaning solution of claim 1, wherein the organic acid is a carboxylic acid.

5. The cleaning solution of claim 4, wherein the carboxylic acid is at least one compound selected from the group consisting of acetic acid, propionic acid, oxalic acid, succinic acid, malonic acid, citric acid, tartaric acid, and malic acid.

6. The cleaning solution of claim 1, wherein the content of the compound represented by formula (I) is in a range of from 0.0001 to 1 mass % with respect to the total solid content amount of the cleaning solution.

7. The cleaning solution of claim 1, wherein the content of the organic acid is in a range of from 0.01 to 30 mass % with respect to the total mass of the cleaning solution.

8. A cleaning method of a substrate for semiconductor device use, comprising cleaning the substrate with the cleaning solution of claim 1.