A composition is provided that is capable of forming an NZP or an NZP-type coating. The composition includes a first composition, a second composition, and a metal cation. The first composition and the second composition form a crystalline structure with three-dimensional network of octahedra and tetrahedra linked by one or more shared atoms. The first composition comprises one or more of Zr, V, Ta, Nb, Hf, Ti, Al, Cr, or a metal of the Lanthanide series. The second composition comprises at least one of phosphorus, silicon, boron, vanadium or aluminum. The one or more shared atoms comprise at least one of oxygen, nitrogen, or carbon. The first composition and the second composition are related as shown by the formula (first composition)2 (second composition)x (shared atom)12−x. The metal cation is disposed within an interstitial site defined by the crystalline structure.
Description
BRIEF DESCRIPTION OF DRAWING FIGURES
FIG. 1 is a schematic cross-sectional view of an article comprising an embodiment of the invention.
Claims
1. A composition capable of forming an NZP or an NZP-type coating, comprising:
a first composition and a second composition, wherein the first composition and the second composition are capable of forming a crystalline structure with three-dimensional network of octahedra and tetrahedra linked by one or more shared atoms, whereinthe first composition comprises one or more of Zr, V, Ta, Nb, Hf, Ti, Al, Cr, or a metal of the Lanthanide series,the second composition comprises at least one of phosphorus, silicon, boron, vanadium or aluminum, andthe one or more shared atoms comprise at least one of oxygen, nitrogen, or carbon, andthe first composition and the second composition are related as shown by the formula (first composition)2 (second composition)x (shared atom)12−x; anda metal cation, wherein the metal cation is disposed within an interstitial site defined by the crystalline structure.
2. The composition as defined in claim 1, wherein the second composition comprises boron.
3. The composition as defined in claim 1, wherein the second composition aluminum.
4. The composition as defined in claim 1, wherein the one or more shared atoms comprise nitrogen.
5. The composition as defined in claim 1, wherein the one or more shared atoms comprise carbon.
6. The composition as defined in claim 1, wherein the first composition comprises phosphorus and the one or more shared atoms comprise nitrogen.
7. The composition as defined in claim 1, wherein the second composition comprises silicon and the one or more shared atoms comprise nitrogen.
8. The composition as defined in claim 1, wherein the second composition comprises boron and the one or more shared atoms comprise nitrogen.
9. The composition as defined in claim 1, wherein the second composition comprises aluminum and the one or more shared atoms comprise nitrogen.
10. The composition as defined in claim 1, wherein the second composition comprises phosphorus and the one or more shared atoms comprise carbon.
11. The composition as defined in claim 1, wherein the second composition comprises silicon and the one or more shared atoms comprise carbon.
12. The composition as defined in claim 1, wherein the second composition comprises boron and the one or more shared atoms comprise carbon.
13. The composition as defined in claim 1, wherein the second composition comprises aluminum and the one or more shared atoms comprise carbon.
14. The composition as defined in claim 1, wherein the second composition comprises boron and the one or more shared atoms comprise oxygen.
15. The composition as defined in claim 1, wherein the second composition comprises aluminum and the one or more shared atoms comprise oxygen.
16. The composition as defined in claim 1, wherein the second composition comprises two or more of P, Si, Al, V or B.
17. The composition as defined in claim 1, wherein the ratio of the first composition to the second composition is 1:1.5.
18. The composition as defined in claim 1, wherein the metal cation is a metal of Group I of the periodic table of elements, is a metal of Group II of the periodic table of elements, is a metal of the Lanthanide series, or is a transition metal.
19. The composition as defined in claim 18, wherein the metal cation comprises three or more of Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, Ga, In, Ag, Zn, Cr, Mn, Fe, Co, La, Lu, or a metal of the Lanthanide series.
20. The composition as defined in claim 1, wherein the first composition comprises zirconium.
21. The composition as defined in claim 1, wherein the metal cation is present in an amount, or absent, sufficient that the interstitial sites are one or more of:
empty,fully occupied, orpartially occupied.
22. The composition as defined in claim 1, wherein the metal cation is present in an amount sufficient that the interstitial sites are off a stoichiometric balance.
23. The composition as defined in claim 1, further comprising a plurality of particles dispersed therein.
24. The composition as defined in claim 23, wherein the particles comprise aluminum nitride, silicon carbide, or both aluminum nitride and silicon carbide.
25. The composition as defined in claim 21, wherein the particles have an average particle size that less than about 50 micrometers.
26. A ceramic coating layer formed from the composition as defined in claim 1.
27. The ceramic layer as defined in claim 26, wherein the layer has the property of a coefficient of thermal expansion in a range of from about 2.2 to about 2.4.
28. The ceramic layer as defined in claim 26, wherein the layer is capable of resisting etching when contacted to a halogen at a temperature in a range of greater than about 100 degrees Celsius.
29. The ceramic layer as defined in claim 26, wherein the layer is capable of resisting etching when contacted to a halogen at a temperature in a range of greater than about 400 degrees Celsius.
30. The ceramic layer as defined in claim 26, wherein the layer is capable of resisting etching when contacted to a halogen at a temperature in a range of greater than about 650 degrees Celsius.
31. The ceramic layer as defined in claim 26, wherein the etching resistance to 18 weight percent feedstock gas comprising oxygen gas and at least one of carbon tetrachloride gas or nitrogen fluoride gas is less than about 10 Angstroms per minute at about 400 degrees Celsius.
32. An article, comprising a substrate, and the layer as defined in claim 26 is disposed on a surface of the substrate.
33. The article as defined in claim 32, wherein the substrate comprises pyrolytic boron nitride.
34. The article as defined in claim 32, wherein the substrate has a CTE value within 3 ppm per degree Celsius difference relative to the CTE value of the ceramic layer.
35. The article as defined in claim 32, wherein the substrate is a heater or a chuck, and the heater is configured for use in a wafer processing device.
36. A protective system comprising a coating, the coating having a CTE matched to a corresponding substrate within about 10 percent of the substrate CTE, and the coating comprising substitution materials capable of resisting etching by oxidizing gas, halogen containing gas, plasma, or all of the foregoing at a temperature greater than room temperature.
37. A system, comprising:
a heater having a surface; anda coating disposed on the surface, wherein the coating has a crystalline structure indicated by the formula:
(L,M1,M2,Zn,Ag,Ga,In,Ln,Y,Sc)1(Zr,V,Ta,Nb,Hf,Ti,Al,Cr,Ln)m(P,Si,V,B,Al)n(O,C,N)12
38. The system as defined in claim 37, wherein the heater comprises boron and nitrogen.
39. The system as defined in claim 37, wherein the heater is capable of reaching temperatures greater than 400 degrees Celsius.
40. The system as defined in claim 37, wherein an etch resistance of the coating is greater than an etch resistance of the heater.
41. A support structure, comprising:
a temperature-controllable base having a temperature less than an operating process temperature of a workpiece;an electrostatic chuck capable of supporting the workpiece, and the chuck being disposed proximate to the base and capable of receiving an incoming heat flux during an operating process;a heater in thermal communication with the electrostatic chuck; anda coating disposed on a surface of the electrostatic chuck, wherein the coating has a crystalline structure indicated by the formula:
(L,M1,M2,Zn,Ag,Ga,In,Ln,Y,Sc)1(Zr,V,Ta,Nb,Hf,Ti,Al,Cr,Ln)m(P,Si,B,V,Al)n(O,C,N)12
42. A wafer processing apparatus, comprising
a platform for placement of a workpiece to be processed, the platform comprising:a base substrate comprising at least one of graphite, a refractory metal, a transition metal, a rare earth metal, or a combination of two or more thereof; anda first protection layer disposed on a surface of the base substrate, the layer comprising at least one of an oxide, nitride, oxynitride, carbide, or nitride of one or more elements selected from a group consisting of Al, B, Si, Ga, refractory hard metals, transition metals, and combinations thereof; and optionallya film electrode disposed on the protection layer;a second protection layer is disposed on a surface of the base substrate, the layer comprising at least one of an oxide, nitride, oxynitride, carbide, or nitride of one or more elements selected from a group consisting of Al, B, Si, Ga, refractory hard metals, transition metals, and combinations thereof;wherein the base substrate has a coefficient of thermal expansion (CTE) in a range of from about 0.75 to 1.25 times that of the first protection layer.
43. A coating, comprising:
an NZP or NZP-type material capable of being disposed on a substrate and having an electrical resistivity in a range of from about 1×1015 to about 1×1018, and an dielectric constant of greater than about 7.
44. The coating as defined in claim 43, wherein the porosity of the coating is less than about 5 volume percent.
45. The coating as defined in claim 43, wherein the thermal diffusivity is in a range of greater than about 6×10−7 m2/sec.
46. The coating as defined in claim 43, wherein the CTE is about 2.3.
Patent Application
20070224451
