Claims
- 1. A method of forming a conductive metal layer on a substrate, consisting essentially of:
- (a) a depositing step, wherein a layer of metal particles comprising copper, nickel or a combination thereof, said particles having a substantially continuous oxide coating on the surface thereof, is deposited on a substrate having a softening point such that said substrate does not deform under processing conditions at 200.degree. C. and
- (b) a heating and pressing step of subjecting metal particles to pressure at a temperature of at least 200.degree. C. for a duration sufficient to improve the conductivity of said metal layer.
- 2. The method of claim 1 wherein said depositing step comprises spraying said metal particles onto said substrate.
- 3. The method of claim 2 wherein said spraying is done with the aid of a liquid suspension agent.
- 4. The method of claim 3 wherein said liquid suspension agent is an organic solvent.
- 5. The method of claim 1 wherein said copper, nickel or combinations thereof contains less than about 40 weight % of non-conductive layer forming metals.
- 6. The method of claim 1 wherein said copper, nickel or combinations thereof contains less than about 20 weight % of non-conductive layer forming metals.
- 7. The method of claim 1 wherein said metal particles have a number average particle size of less than about 30 .mu.m.
- 8. The method of claim 1 wherein said metals are present in the form of a mixture containing less than about 25 weight of other non-conductive layer forming metals.
- 9. The method of claim 1 wherein said metal particles are in the form of flakes.
- 10. The method of claim 1 wherein said heating and pressing step takes place at 200.degree. C. to about 400.degree. C.
- 11. The method of claim 10 wherein said heating and pressing step takes place at about 220.degree. to about 350.degree. C.
- 12. The method of claim 1 wherein said heating and pressing step takes place at temperature below the melting point of any substantially present metal.
- 13. The method of claim 12 wherein the pressure is 5-100 MPa.
- 14. The method of claim 1 wherein the maximum temperature in said heating and pressing step is at or above the softening point of said substrate.
- 15. The method of claim 1 wherein said substrate is comprised of a synthetic resin.
- 16. The method of claim 15 wherein said synthetic resin is a thermoplastic resin wherein, in the repeating units of the polymer, at least 40% of the carbon atoms are aromatic carbon atoms.
- 17. The method of claim 16 wherein said resin is a polyether sulfone, a polyetherimide, a polyetheretherketone (PEEK), a polyetherketone (PEK), polyarylate, a polysulfone, a polyarylsulfone, a liquid crystaline polymer, or a thermoplastic polyimide resin.
- 18. The method of claim 1 wherein said depositing step comprises applying said metal particles to a transfer surface and pressing the transfer surface against said substrate.
- 19. The method of claim 18 wherein said transfer surface has relief areas which will not contact the substrate, thereby transferring a pattern of metal particles
- 20. The method of claim 1 wherein a metal layer has been deposited on two opposite surfaces of the substrate.
- 21. A coated substrate produced by the method of claim 1.
- 22. A coated substrate produced by the method of claim 20.
- 23. A method of shielding a space from a source of EMI, comprising placing the coated substrate of claim 21 between the source of EMI and the space to be shielded.
- 24. A method of shielding a space from a source of EMI comprising placing the coated substrate of claim 22 between the source of EMI and the space to be shielded.
RELATED APPLICATIONS
This is a continuation-in-part of Ser. No. 07/204,044, filed June 8, 1988, now abandoned, which is a continuation-in-part of Ser. No. 07/068,593, filed June 30, 1987, now abandoned.
US Referenced Citations (5)
Foreign Referenced Citations (2)
Number |
Date |
Country |
697216 |
Nov 1964 |
CAX |
170063 |
Feb 1986 |
EPX |
Continuation in Parts (2)
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Number |
Date |
Country |
Parent |
204044 |
Jun 1988 |
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Parent |
68593 |
Jun 1987 |
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