Claims
- 1. Method for obtaining high purity silicon in shotted form by consolidating a powder formed of fine size particles of high purity silicon formed by the pyrolysis of high purity silane, said method comprising:
- (i) introducing a flow of powder formed of said particles into a heated zone which is at a temperature sufficient to melt the particles,
- (ii) collecting the particles in a crucible which is positioned in the heated zone and which is essentially inert to melted silicon particles so as to establish a pool of molten silicon in said crucible, into which pool additional particles are added and melted,
- (iii) providing an aperture in said crucible below the surface of the pool of molten silicon,
- (iv) establishing a pressure differential between the upper surface of said pool of molten silicon and said aperture sufficient to cause molten silicon to exit said aperture in a relatively steady jet which breaks up into a train of discrete molten droplets, having a diameter about two times that of said aperture,
- (v) causing said discrete molten droplets to pass through a cooling zone containing a cooling gas which is essentially non-reactive with said molten droplets and which is at a temperature sufficient to solidify at least the outer peripheral portion of said droplets to provide silicon in shotted form having a purity essentially the same as that of said powder.
- 2. Method in accordance with claim 1 wherein the upper surface of said molten pool of silicon is at a temperature in the range of about 1500.degree. to 1600.degree. C. and the temperature of the molten pool of silicon adjacent said aperture is in the range of about 1425.degree. to 1450.degree. C.
- 3. Method in accordance with claim 1 wherein said aperture is substantially circular in cross-section having a diameter of about 0.5 to 2 mm.
- 4. Method in accordance with claim 2 wherein said aperture is substantially circular in cross-section having a diameter of about 0.5 to 2 mm.
- 5. Method for obtaining high purity silicon in shotted form by consolidating a powder formed of fine sized particles of high purity polycrystalline silicon formed by the pyrolysis of high purity silane, said powder having a bulk density of about 0.03 to 0.2 gm/cc a surface area in the range of about 25 to 2.5 m.sup.2 /gm and a particle size of about 0.1 to 1 micron,
- (i) introducing a flow of powder formed of said particles and by-product hydrogen gas into a chamber containing a heated zone which is at a temperature sufficient to melt the particles, said by-product hydrogen gas being at a pressure sufficient to maintain a positive pressure within said chamber
- (ii) collecting the particles in a crucible made of a material which is positioned in the heated zone and which is essentially inert to melted silicon particles so as to establish a pool of molten silicon in said crucible,
- (iii) providing an aperture in said crucible below the surface of the pool of molten silicon, into which pool additional particles are added and melted
- (iv) establishing a pressure differential between the upper surface of said pool of molten silicon and said aperture sufficient to cause molten silicon to exit said aperture in a relatively steady jet which breaks up into a train of discrete molten droplets, having a diameter about two times that of said aperture
- (v) causing said discrete molten droplets to pass through a cooling zone containing by-product hydrogen gas which is at a temperature sufficient to solidify at least the outer peripheral portion of said droplets to provide silicon in heated form having a purity essentially the same as that of said powder particles.
- 6. Method in accordance with claim 1 wherein the heated zone is maintained by inductively coupling to the silicon melt pool.
STATEMENT
The invention described herein was made in the performance of work under NASA Contract Number NAS 7-100, JPL No. 954334, for high purity silicon, and is subject to the provisions of Section 305 of the National Aeronautics and Space Art of 1958 (72 Stat. 435; 42 U.S.C. 2457).
US Referenced Citations (8)
Non-Patent Literature Citations (2)
Entry |
Electronics/Oct. 26, 1978, p. 68, "Silicon Casting Promises Lower-Cost Photovoltaic Cells". |
Brodkey, R. S.; The Phenomena of Fluid Motions, 1967, Addison-Wesley Publishing Company, Chapter 17. |