Number | Date | Country | Kind |
---|---|---|---|
44 24 420.7 | Jul 1994 | DEX |
Number | Name | Date | Kind |
---|---|---|---|
H665 | Knolle et al. | Aug 1989 | |
3983264 | Schroen et al. | Sep 1976 | |
4062707 | Mochizuki et al. | Dec 1977 | |
4332837 | Peyre-Lavigne | Jun 1982 | |
4489103 | Goodman et al. | Dec 1984 | |
4778776 | Tong et al. | Oct 1988 | |
4827324 | Blanchard | May 1989 | |
5410177 | Harmel et al. | Apr 1995 |
Number | Date | Country |
---|---|---|
3138324 | Apr 1983 | DEX |
61-147581 | Jul 1986 | JPX |
2143083 | Jan 1985 | GBX |
2173035 | Oct 1986 | GBX |
Entry |
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Matsushita et al, "A SIPOS-Si Heterojunction Transistor", Jap. Jour. Appl. Phys., vol. 20, 1981, pp. 75-81. |
A. Mimura et al.: "High-Voltage Planar Structure Using SiO.sub.2 -SIPOS-SiO.sub.2 Film". In: IEEE Electron Device Letters, vol. EDL-6, No. 4, Apr. 1985, pp. 189-191. |
Y. H. Kwark et al.: "SIPOS Heterojunction contacts to Silicon". In: IEDM 84, pp. 742-745, 1984. |